MTMO—OFDM系统中空时／频码的性能分析

MIMO（多输入多输出）和OFDM（正交频分复用）技术的结合可以实现高数据传送速率并具有强的可靠性。文中分别研究基于STBC（空时分组编码）与SFBC（空频分组编码）的MIMO-OFDM系统和在不同的车载速度和时延扩展变化时的误比特率变化情况,结果表明：在不同环境中只有选择合适的系统参数才能发挥系统的最佳性能。     

STBC-OFDM系统中的协同分集研究

空时分组编码-正交频分复用(STBC-OFDM)系统是未来移动通信的研究热点。协同网络利用空间可获得的分布式天线,从而获得额外的空间分集增益。把协同分集应用到空时分组编码-正交频分复用系统中,给出一种新的协同空时块码OFDM系统。采用放大前传、译码前传和处理前传3种协同策略,研究在不同协同策略情况下的最大接收机机构和系统性能。     

基于空时编码的MB-OFDM超宽带通信系统

基于MB-OFDM（多带正交频分复用）超宽带通信系统上，采用了两种特殊的空时（频）编码结构来改善系统性能。仿真结果表明，在修正的S-V信道模型下，该系统增大了传输速率，基于空时分组编码（STBC）结构的超宽带系统在低信噪比情况下可以获得较好的分集增益，而基于预编码的空时频编码（STFC）的超宽带系统的BER性能比单天线系统的BER性能更加优异．     

SFBC-OFDM系统在时频双选信道下的迭代接收算法

基于广义最小信道估计算法,结合迫零均衡原则,针对空频块码正交频分复用系统,提出了一种迭代的均衡广义最小接收算法.该方法推导了两发两收空频块码正交频分复用系统的迫零频域均衡算法,以便消除信道频率选择性衰落所引起的系统相邻子载波间信道系数的差异,从而保证了空频块码的正交性,使得接收算法能够有效抑制差错传播、明显加快迭代的收敛速度并改善系统的比特误码性能.数值仿真结果表明:当归一化多普勒较大时,采用该接收算法的空频块码正交频分复用系统能够较快地收敛,并较基于期望最大化的空频块码正交频分复用系统与基于时域卡尔曼的空烦块码正交频分复用系统分别获得8 dB和14,dB的增益.     

MIMO-OFDM系统中的空频编码技术的研究

基于多输入多输出（MIMO）的空时编码技术可以充分利用无线通信信道中的多径,从而降低误码率、提高系统的可靠性。本文在空时编码技术的基础上,基于OFDM（正交频分复用）系统提出了一种空频分组码的编码改进方案。经仿真证明：编码后的系统相对于STBC-OFDM（空时分组编码）系统的性能更优越,提高了系统的可靠性。     

MIMO-OFDM系统中的空时/频编码技术

OFDM(正交频分复用)是一种高效的多载波调制技术,可以用来对抗无线环境中的多径衰落,减少码间干扰。空时编码是一种发射分集技术。文中主要研究基于M IMO(多输入多输出)-OFDM的空时分组码和空频分组码的系统结构以及编译码方法。仿真结果表明,将空时编码技术与M IMO-OFDM技术相结合能有效地抵抗频率选择性随机衰落。     

一种基于空时分组编码的MIMO-OFDM系统接收空间分集方案

文献[1]提出了一种使用正交设计的单输入多输出正交频分复用(SIMO-OFDM)系统的空间分集接收结构,目的是为了减少接收端DFT块的数目以降低系统复杂度和减少功率消耗。由于在线性处理过程中噪声叠加的影响,造成了一定的性能损失。本文提出了一种基于空时分组编码的多输入多输出OFDM(MIMO-OFDM)系统空间分集接收方案,通过在文献[1]提出的分集结构中引入使用空时分组编码的发射分集,弥补了因减少DFT块数目而造成的性能损失。本文对使用空时分组编码后的处理过程进行了推导,并对使用空时编码前后的系统性能进行了仿真和比较。     

基于SFBC MIMO-OFDM系统的峰均比抑制算法

与联合空时编码的多输入/多输出的正交频分复用(STBC MIMO-OFDM)系统比较,联合空频编码(SFBC)的MIMO-OFDM系统具有更优的抗多径时变衰弱信道能力,已被TD-LTE制式采用。针对SFBC MIMO-OFDM系统存在峰值平均功率比过高的问题,提出一种低复杂度的子块间空频变换算法。首先在频域上,对所有天线的空频分组码序列进行均等分块,对天线间相应子块进行交叉反向产生候选序列,并从候选序列中选择PAPR最小序列。然后,在时域上对各天线内子块同步进行逐次循环移位,进一步选择最优PAPR序列进行传输。通过结合IFFT特性和SFBC特性分析实现大幅度降低算法复杂度。仿真结果证明在保证SFBC正交性的基础上,算法具备有效性和可靠性。     

MIMO-OFDM系统信道估计的研究

文章以2×2多输入多输出正交频分复用(MIMO-OFDM)系统的信道估计技术为研究对象,分析了该系统中结合空时编码的判决反馈信道估计方法和二维导频辅助MMSE信道估计方法,并通过仿真比较其性能.结果表明,对于慢衰落信道,可采用判决反馈方法进行信道估计,而对于快衰落时变信道,宜采用二维导频辅助MMSE方法进行信道估计,但要付出频率利用率下降的代价.     

HIPERLAN/2中正交频分复用技术仿真性能研究

讨论HIPERLAN／2标准的物理层结构，分析HIPERLAN／2中正交频分复用技术特点，提出正交频分复用系统仿真模型，并对不同的数字调制方式及编码效率的正交频分复用系统进行研究，给出系统传输的误码率性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.