大口径硅基空间红外透镜的高精度加工与检测（特邀）

随着红外技术的不断发展,空间大口径红外光学元件的需求日益增长,其各项制造指标也逐渐接近可见光级光学元件的制造要求,由此对新型空间红外光学元件的加工和检测技术均提出了更高的挑战。针对大口径的高陡度超薄硅基红外透镜,提出了以超声铣磨-机器人研抛-离子束精抛为工艺链路的加工方案,改善了传统红外工艺路线存在的低效率、表面高频误差等问题。针对凸非球面轮廓检测中支撑引起的测试误差,在粗抛和精抛阶段分别采用了柔性缓冲支撑与三点强迫位移支撑方法,有效解决了大口径高陡度超薄透镜测试中的支撑变形问题。经过理论仿真与实验验证,证明该测试方法具有较好的一致性。通过改进的轮廓检测方法,实现了轮廓测试中支撑误差的准确分离,有效提升了加工的极限精度。最终大口径红外透镜凸非球面加工精度达RMS λ/50 （λ=632.8 nm）,满足设计指标要求。     

热电制冷HgCdTe中波红外探测器的研制

利用碲镉汞(HgCdTe)体晶材料,采用HgCdTe材料拼接技术、磨抛技术等成熟的探测器芯片制备工艺以及三级热电制冷技术,设计并研制出了热电制冷型13元HgCdTe中波红外光导探测器。在-50℃时,峰值电压响应率可达2.7×104 V/W,峰值探测率达到2.3×1010 cm·Hz1/2·W-1,响应波段在3.0~4.6mm之间,峰值响应波长为4.2mm。     

对影响碲锌镉晶片红外透过率因素的研究

文章主要通过扫描电镜、红外傅立叶光谱仪、红外显微镜、X光回摆曲线和形貌像的分析手段结合磨抛、腐蚀的工艺对影响碲锌镉红外透过率的因素及其程度进行了分析研究。     

红外伪装技术现状和发展趋势

红外侦察技术的飞速发展使得军事目标面临新的威胁环境。因此，以对抗敌方红外侦察与打击为目的的红外伪装技术受到各国军界的普遍重视并得以迅速发展，本文简要分析了红外伪装技术的三大分支即红外抑制技术，改变介质红外传输特性技术和红外欺骗技术的发展现状，并探讨了其发展趋势。     

劳厄形貌术在碲镉汞器件研制中的应用

讨论了反射劳厄形貌术的优缺点，结合碲镉汞器件研制工作给出了实际应用的几个例子。如磅镉汞晶片结构检查，观察碲镉汞晶片表面的磨抛损伤、跟踪观察碲镉汞晶片在光刻、化学腐蚀成形、离子刻蚀成形前后的晶格变化等。     

侧边抛磨光纤泄漏光功率空间分布研究

侧边抛磨光纤技术发展迅速,越来越多的基于侧边抛磨光纤的光器件己用于实际.为了更好地优化制作此类器件,本文对侧边抛磨区泄漏光功率空闯分布进行了理论与实验分析.本文利用多层平板光波导模型对光纤侧边抛磨区涂覆不同折射率材料时,侧边抛磨区泄漏光功率的轴向出射方向进行了模拟计算,并进行了泄漏光功率空间分布的实验测试.分析结果表明.在不影响纤芯中光功率传输条件下,将抛磨区置于空气中,同时将光电探测器垂直置于抛磨平面上方,则可实现高效率接收侧边抛磨区泄漏光功率.     

HgCdTe外延用的CdZnTe衬底研制

阐述了ＣｄＺｎＴｅ衬底在红外焦平面阵列探测器研究中的重要性;概括了ＣｄＺｎＴｅ晶体生长的方法、原理和工艺步骤;分析了影响晶体质量（单晶面积、组分及均匀性、结晶完整性、光电特性）的因素,并提出了与质量相关的控制技术;介绍了ＣｄＺｎＴｅ衬底制备过程中,晶片处理的工艺和步骤（晶锭的定向切割、单晶划片、极性鉴别、磨抛、腐蚀）;报道了目前ＣｄＺｎＴｅ晶体的性能水平,晶片处理结果和ＣｄＺｎＴｅ的应用情况。     

星载红外摄像图像增强技术

本文论述了星载红外摄像图增强技术的发展现状与趋势。介绍了ＣＣＤ摄像技术的特点。分析了图像模糊的原因并提出了解决此总是的技术措施及发展此项技术的几点看法和建议。     

红外伪装技术现状和发展趋势

红外侦察技术的飞速发展使得军事目标面临新的威胁环境，因此，以对抗敌方红外侦察与打击为目的的红外伪装技术受到各国军界的普遍重视并得以迅速发展。本文简要分析了红外伪装技术的三大分支即红外抑制技术、改变介质红外传输特性技术和红外欺骗技术的发展现状，并探讨了其发展趋势。     

红外探测水面舰船远场热尾流的数学模型与计算

建立了热分层环境下舰船远场热尾流计算的数学模型,该模型由抛物化的RaNS方程及能量方程组成,采用k2ε两方程湍流模式。借助文献[ 7 ]给出的确定舰船远场尾流计算的初始截面方法,采用有限分析解法计算了舰船热尾流中的温度分布特征、热尾流宽度扩展规律,并与实验结果[ 4 ]进行了比较,二者符合得较好。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-