二维MEMS风速风向传感器的设计与测试

给出一种基于MEMS工艺的二维风速风向传感器的设计、制造以及测试结果。该传感器加热电阻采用圆形结构,四个测温电阻对称分布在芯片四周。传感器芯片在玻璃衬底上采用两步MEMS剥离工艺加工,加工工艺简单可靠。该传感器采用恒功率工作方式,利用热温差原理测量风速和风向。经过风洞测试,传感器可以完成360°风向检测,误差不超过10°。     

二维MEMS风速风向传感器的设计与测试

给出一种基于MEMS工艺的二维风速风向传感器的设计、制造以及测试结果。该传感器加热电阻采用圆形结构，四个测温电阻对称分布在芯片四周。传感器芯片在玻璃衬底上采用两步MEMS剥离工艺加工，加工工艺简单可靠。该传感器采用恒功率工作方式，利用热温差原理测量风速和风向。经过风洞测试，传感器可以完成360°风向检测，误差不超过10°。     

一种基于CMOS工艺的二维风速传感器的设计和测试

给出了一种完全基于CM O S工艺的、能同时测量风速和风向的二维测风传感器的结构、工作原理及其测试结果。该传感器采用恒温差工作模式,热堆输出电压平均值反映芯片温度和环境温度的差,省去了测温二极管。风速测量采用热损失型原理,因此不存在速度量程问题;同时通过四周对称分布热堆的相对差分输出得到风向,风向的测试和风速无关。测试电路是由普通运放电路组成的控制和测试系统。经过风洞测试,风速的测量可以达到23m/s,风速分辨率达到0.5 m/s,风速的最大误差为0.5 m/s。传感器的反应时间为3~5秒,整个功率损耗约为500 mW。     

一种基于MEMS工艺的二维风速传感器的设计

给出了一种基于MEMS工艺的二维热风速传感器的设计、制造以及测试结果.该传感器采用恒功率工作方式,利用热温差的方法测量风速和风向.本传感器采用MEMS剥离工艺在玻璃衬底上同时加工出加热电阻和测温电阻,利用简单可靠的加工工艺实现了热隔离和高灵敏度.经过风洞风速风向测试,得知传感器的风速量程超过10m/s,360°范围内风向测量误差不超过8°.传感器的响应时间不超过1s,功耗为10mW.     

一种基于MEMS工艺的二维风速传感器的设计

给出了一种基于MEMS工艺的二维热风速传感器的设计、制造以及测试结果.该传感器采用恒功率工作方式,利用热温差的方法测量风速和风向.本传感器采用MEMS剥离工艺在玻璃衬底上同时加工出加热电阻和测温电阻,利用简单可靠的加工工艺实现了热隔离和高灵敏度.经过风洞风速风向测试,得知传感器的风速量程超过10m/s,360°范围内风向测量误差不超过8°.传感器的响应时间不超过1s,功耗为10mW.     

CMOS硅风速传感器热性能的分析

给出了一种能同时测量风速和风向的基于CMOS工艺的二维硅风速传感器的工作原理、结构及其热学模型。针对恒温差和恒定功率两种控制方式,建立各自的一维传感器热学模型,并采用有限元分析工具ANSYS/FLOTRAN141分析和比较了不同控制条件下传感器的热性能及其和传感器特征尺寸的关系。最后,通过试验结果验证了模拟的正确性。     

一种多功能低空气象探测仪的设计与实现

研究了一种基于MSP430单片机的低空气象探测仪器。系统硬件包括主控制模块、传感器模块、通信模块和存储模块等。风向测量系统通过由平面电子罗盘XW3200和风标组成的磁方位风向传感器实现;压力测量电路采用绝压传感器ASDX015,将其模拟电压传入主芯片;利用叶轮式风速传感器,由主芯片接受霍尔传感器产生的电磁脉冲实现风速的测量。该仪器可实现气温、气压、湿度、风等参量的实时测量和存储,野外测试结果表明,系统性能可靠、使用方便、能够满足精度和战技指标要求。     

风雨自动遥测仪原理与应用

风雨自动遥测仪用于测量风向，风速，雨量数据以提高暴雨预报水平，文章介绍了该仪器的硬件组成和软件设计，硬件包括雨量传感器，风向风速传感器，８０３１单片机８２７９芯片以及触摸键，ＬＥＤ等，该仪器有一个标准ＲＳ－２３２Ｃ接口和一个远程通讯接口，分别与计算机及调制解调器相连，从而组成一个通讯网络，应用情况表明，这是一个实时性很强的智能型测量仪器。     

MEMS固态风速风向传感器的设计与制作

风速风向参数的测量在气象测量中占有重要的地位。基于MEMS技术的固态风速风向传感器具有体积小、重量轻、成本低的优点。设计了两种基于MEMS工艺的固态测风传感器,即硅薄膜式测风传感器和硅悬梁式测风传感器,用流体力学原理对这两种风速风向传感器进行了理论分析及ANSYS CFD软件模拟仿真,得出了风速与挠度、剪切力的关系。用惠斯通电桥测量传感器输出信号,通过单个传感器的二次封装测量风向信号。制作出了硅悬梁式测风传感器,并进行了初步测试。     

MEMS固态风速风向传感器的设计与制作

风速风向参数的测量在气象测量中占有重要的地位。基于MEMS技术的固态风速风向传感器具有体积小、重量轻、成本低的优点。设计了两种基于MEMS工艺的固态测风传感器，即硅薄膜式测风传感器和硅悬梁式测风传感器，用流体力学原理对这两种风速风向传感器进行了理论分析及ANSYS CFD软件模拟仿真，得出了风速与挠度、剪切力的关系。用惠斯通电桥测量传感器输出信号，通过单个传感器的二次封装测量风向信号。制作出了硅悬梁式测风传感器，并进行了初步测试。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.