一种高效的门级电路可靠度估算方法

随着半导体技术的不断发展,芯片的集成度越来越高,软差错已经成为影响电路可靠性的关键因素之一.为了有效评估软差错对电路的影响,该文提出一种基于信号取值概率的门级电路可靠度估算方法.首先计算电路所有节点在软差错影响下的取值概率,然后用故障模拟分析电路整体可靠性.通过对基准电路的实验并与概率转移矩阵方法进行比较,该方法在不损失准确度的前提下,在时间与空间开销方面都具有优势,尤其适合估算特定向量和随机向量激励下电路的可靠度.     

触发器可靠度计算的F-PTM方法

传统的概率转移矩阵（PTM）方法是一种用于估计软错误对组合电路可靠度影响的有效方法,但传统PTM方法只适用于组合逻辑电路的可靠度评估.触发器是时序逻辑电路的重要组成部分,其可靠度评估对时序电路的可靠度分析研究至关重要.为此,本文提出了基于PTM的触发器可靠度计算的F-PTM方法及电路PTM的判定定理.F-PTM方法首先建立触发器电路的特征方程,再用电路PTM的判定定理生成触发器的PTM,最后,根据输入信号的概率分布函数计算出电路的可靠度.与传统PTM方法相比较,F-PTM方法既能计算组合电路的PTM,又能计算触发器电路的PTM,其通用性强.对典型的触发器电路和74X系列电路中的触发器电路的实验结果表明,F-PTM方法合理可行.与多阶段方法和Monte Carlo方法的实验结果相比较,F-PTM方法得到的结果更精确.     

基于概率转移矩阵的时序电路可靠度估计方法

传统的概率转移矩阵(Probabilistic Transfer Matrix,PTM)方法是一种能够比较精确地估计软差错对门级电路可靠度影响的方法,但现有的方法只适用于组合逻辑电路的可靠度估计.本文提出基于PTM的时序电路可靠度估计方法(reliability estimation of Sequential circuits based on PTM,S-PTM),先把待评估时序电路划分为输出逻辑模块和次态逻辑模块,然后用本文提出的时序电路PIM计算模型得到电路的PIM,最后根据输入信号的概率分布计算出时序电路的可靠度.用ISCAS 89基准电路为对象进行实验和验证,实验表明所提方法是准确和合理的.     

基于伯努利分布的逻辑电路可靠度计算方法

在深亚微米及纳米级集成电路设计过程中,电路的可靠性评估是非常重要的一个环节.本文提出了一种利用概率统计模型计算逻辑电路可靠度的方法,将电路中的每个逻辑门是否正常输出看作一次随机事件,则发生故障的逻辑门数为某个特定值的概率服从伯努利分布;再利用实验统计单个逻辑门出错时电路的逻辑屏蔽特性,根据此方法计算出ISCAS'85和ISCAS'89基准电路可靠度的一个特定范围.理论分析和实验结果表明所提方法是准确和有效的.     

基于概率转移矩阵的串行电路可靠度计算方法

概率转移矩阵(Probabilistic Transfer Matrix,PTM)方法是一种能够在门级比较精确地估计差错对电路可靠性影响的方法,但目前其实现方法只能适用于较小规模的电路.本文引入了电路划分的思想,先把电路分割成一组适宜用原始PTM方法直接计算其可靠度的模块,然后计算出这些模块的可靠度,再依据串行可靠度模型,将所有模块可靠度合成为整个电路的可靠度.本文用实验的方法通过对74系列电路的分析得到了合适的电路分割参数,即分割宽度,再进一步对ISCAS85基准电路进行了可靠度的计算,结果表明新方法可以适用于更大规模的无冗余组合电路.通过与依据美军标MIL-HDBK-217所算得的可靠度的比较,验证了本文所提出的方法的合理性.     

基于概率表达式的MPRM电路功耗计算方法

采用基于信号概率的功耗计算模型进行MPRM（Mixed Polarity Reed-Muller）电路功耗优化,信号概率计算是功耗计算的关键.提出一种基于概率表达式的MPRM电路功耗计算方法.该方法兼顾信号概率计算的时间效率和准确性,对MPRM电路中不存在空间相关性的信号通过在电路中传播信号概率的方式计算其信号概率,存在空间相关性的信号则利用概率表达式计算其信号概率,并在电路中传播概率表达式以解决空间相关性问题,在此基础之上根据基于信号概率建立的解析动态功耗和静态功耗计算模型计算电路功耗.为进一步提高时间效率,该方法采用二元矩图表示概率表达式.使用基准电路对所提出方法进行了验证,并与其他采用不同信号概率计算方法的MPRM电路功耗计算方法进行了比较.结果表明所提出方法准确有效.     

一种快速精确查找逻辑电路失效位置的方法

提出了一种快速、精确查找组合逻辑电路失效位置的方法.这种方法对高辐射电路的可靠性评估很有意义.这种方法是通过对电路失效原理的分析,以及对失效概率的估计,来查找组合电路的失效位置.整个查找过程在Matlab平台上实现,用ISCAS'85基准电路进行实验,所有电路均采用0.18 μm标准CMOS工艺.结果表明,相对HSPICE随机仿真的方法,这种方法的速度提高了将近49倍,而且准确率达到94.7%.     

结合版图结构信息的基本门电路故障概率估计

在门级电路可靠性估计方法中,基本门的故障概率P一般采用经验值或人为设定.本文结合基本门的版图结构信息,综合考虑了设计尺寸及缺陷特性等因素,分析了不同缺陷模型下的粒径分布数据,给出了缺陷模型粒径概率密度分布函数的参数c的计算算法,并推导出了P的计算模型.理论分析与在ISCAS85及74系列电路上的实验结果表明,缺陷的分段线性插值模型能较准确地描述电路可靠性模型的低层真实缺陷.对ISCAS85基准电路采用本文方法所得到的电路可靠度与采用美国军用标准MIL-HDBK-217方法所得到的计算结果进行了比较,验证了本文所建P模型的合理性.     

考虑时间因素的不同基本门故障概率计算

在门级电路的可靠性概率评估方法中,基本门的故障概率p一般人为设定或以常数形式出现.考虑到不同基本门的故障概率具有随时间变化的特性并结合其输入导线,本文构建了考虑输入负载的随时间变化的不同基本门的故障概率模型.理论分析与实验结果表明,基于弱链接模型的双峰对数正态分布更适合用来表示输入导线故障概率的时间分布.用本文方法、美国军用标准MIK-HDBK-217及Monte Carlo方法计算了ISCAS85基准电路的可靠度并进行了比较,还通过了行业标准的检验,结果验证了本文所构建模型的合理性.     

卷积神经网络加速器中SEU的评估与加固研究

AI加速器在空间探索应用时需要考虑到空间辐射环境下SEE引发的软错误。在AI加速器设计过程中,需要对其SEE容错能力和可靠性进行评估,本文对Lenet-5的加速器进行了SEU故障注入,提出了一种从网络结构与电路模块映射的角度进行统计评估的方法。实验结果证明,在神经网络中,由于AI加速器计算数据大的特点,发生在权重和特征图的SEU错误在传播过程中有可能会被池化层屏蔽掉,SEU错误发生在靠近输出的层级比靠近输入的层级更容易导致识别准确率的下降。此外,实验还发现,在加速器电路模块映射中,负责产生使能信号和地址控制信号的控制单元CTRL比处理单元PE和存储单元MEM更容易被SEU错误所影响,严重时会影响加速器的正常运行。最后本文针对评估结果,进行了STMR加固措施对CTRL进行了加固,相比于FTMR,极大地减少了面积开销。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.