Numerical simulation of the thermal response of continuous-wave terahertz irradiated skin

We report a two-layer model to describe the thermal response of continuous-wave (CW) terahertz (THz) irradiated skin. Based on the Pennes bio-heat conduction equation, the finite element method (FEM) is utilized to calculate the temperature distribution. The THz wave with a Gaussian beam profile is used to simulate the photo-thermal mechanism. The simulation results show the dynamic process of temperature increasing with irradiation time and possible thermal damage. The factors which can affect temperature distribution, such as beam radius, incident power and THz frequency, are investigated. With a beam radius of 0.5 mm, the highest temperature increase is 3.7 K/mW.     

一种全新的基于小电流过趋热效应的峰值结温电学测试方法

It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA （thermal spectrum analysis method）. Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.     

Influences of Low Energy Ion Implantation on Properties of Polyaniline／Si Heterojunction Solar Cells

Ion implantation may favorably modify the properties of polyaniline/Si heterojunction solar cells fabricated by the electrochemical method. Influences of the implantation on the absorption spectrum and the thermal stability were discussed and output properties were measured. The results show that the absorption spectrum of the polyaniline films modified by ion implantation is much wider; its pyrolytic temperature increases by 40 ℃, and the polyaniline/Si cell efficiency increases 18 and 3 times under the illumination of 10.92 and 37.2 W/m^2 , respectively.     

Thermal distribution analysis of multi-core photonic crystal fiber laser

The thermal properties of photonic crystal fiber(PCF) laser with 18 circularly distributed cores are investigated by using full-vector finite element method(FEM).The results show that the 18-core PCF has a more effective thermal dispersion construction compared with the single core PCF and 19-core PCF.In addition,the temperature distribution of 18-core PCF laser with different thermal loads is simulated.The results show that the core temperature approaches the fiber drawing value of 1800 K approximately when the thermal load is above 80 W/m which corresponds to the pumping power of 600 W approximately,while the coating temperature approaches the damage value of about 550 K when the thermal load is above 15 W/m which corresponds to the pumping power of 110 W approximately.Therefore the fiber cooling is necessary to achieve power scaling.Compared with other different cooling systems,the copper cooling scheme is found to be an effective method to reduce the thermal effects.     

基于新型DCA封装的陶瓷风速风向传感器

An advanced direct chip attaching packaged two-dimensional ceramic thermal wind sensor is studied. The thermal wind sensor chip is fabricated by metal lift-off processes on the ceramic substrate. An advanced direct chip attaching （DCA） packaging is adopted and this new packaged method simplifies the processes of packaging further. Simulations of the advanced DCA packaged sensor based on computational fluid dynamics （CFD） model show the sensor can detect wind speed and direction effectively. The wind tunnel testing results show the advanced DCA packaged sensor can detect the wind direction from 0° to 360° and wind speed from 0 to 20 m/s with the error less than 0.5 m/s. The nonlinear fitting based least square method in Matlab is used to analyze the performance of the sensor.     

Thermal Characteriztion of 1.3 μm InAsP／InGaAsP Ridge Waveguide MQW Laser Based on Spectroscopy Method

An experimental way to analyze the thermal characteriztion of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed,By using this way the thermal characteristicss of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated.Results shovw that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges,the thermal resistance of the laser diodes could be deduced easily,A higer thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering.Other thermal and spectral properties of the laser have also been measured and discussed.     

Thermal investigation of high-power GaAs-based laser diodes

The thermal characteristics of high-power AlGaAs/GaAs laser diodes (LDs) at high current (2-10 A) are studied with electrical transient method. The temperature rise increases linearly with the current. The thermal resistance of chip is the largest proportion of total thermal resistance. By increasing the width of the chip from 500 to 800 μm, the temperature rise and thermal resistance decrease by 8.5% and 8.8%, respectively.     

Thermal simulation and optimization design on a high-power LED spot lamp

In this paper, thermal characteristics of the high-power LED spot lamp are reported. The emphasis is placed upon optimizing design of the heat sink of LED spot lamp using the optimization module and the orthogonal-experiment method. Results demonstrate that the weight of the heat sink is decreased to 46.1% of that for the initial structure, and the influence of each factor on junction temperature and weight of the heat sink is acquired by range analysis. Finally, the influence of ambient temperature and natural convection coefficient on the LED maximum temperature is analyzed. The results and the optimizing methodology are of great importance to the thermal design of LED lamps.     

Thermal performance of sputtered insoluble Cu(W) films for advanced barrierless metallization

The thermal performance of sputtered Cu films with dilute insoluble W (1.3 at.%) on barrierless Si substrates has been studied, using the analyses of focused ion beam, x-ray diffraction, and electrical resistivity measurement. The role of the Cu(W) film as a seed layer has been confirmed based on the thermal performance evaluations in both thermal cycling and isothermal annealing at various temperatures. The electrical resistivity of ∼1.8 μΩ-cm for Cu/Cu(W) film is obtained after thermal annealing at 400°C. Because of the good thermal stability, the Cu(W) seed layer is also considered to act as a diffusion buffer and is stable up to 490°C for the barrierless Si scheme. The results indicate that the Cu/Cu(W) scheme has potential in advanced barrierless metallization applications.     

A device for fluorescence temperature measurement based on fast fourier transform

A sapphire fiber thermal probe with Cr^3＋ ion-doped end was grown using the laser heated pedestal method. The fluorescence thermal probe offers advantages of compact structure, high performance and the ability to sustain high temperature from the room temperature to 450℃. Based on the fast fourier transform （FFT）, the fluorescence lifetime is obtained from the tangent function of the phase angle of the first non-zeroth item of FFT result. Compared with other traditional fitting methods, our method has advantages such as fast speed, high accuracy and being free from the influence of the base signal. The standard deviation of FFT method is about half of that method. In addition, since the FFT method is immunity to analysis can be skipped. of the Prony method and close to the one of the Marquardt the background noise of the signal, the background noise     

Thermal Analysis of InAlAs/InGaAs/InP Mid-infrared QCLs Operating in CW Mode

A simulation method for the thermal analysis of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers (QCLs) based on finite-element method (FEM) is presented. The thermal distribution of the QCLs on substrate-side or epilayer-side mounting forms is simulated and the results are compared. Results show that the epilayer-side mounting form has much better heat dissipation capability than the substrate-side mounting.     

Improved CW operation of quantum cascade lasers with epitaxial-sideheat-sinking

First results on the epilayer-side mounting of quantum cascade (QC) lasers are presented. Operated in continuous-wave (CW) mode, these lasers are superior to substrate-bonded devices. The maximum CW temperature is raised by 20 K (up to 175 K), and, at comparable heat sink temperatures, the performance with respect to threshold current, output power, and slope efficiency is greatly improved for the epilayer-side mounted devices. QC-laser-specific mounting procedures are discussed in this letter, such as the high reflectivity coating of the back-facet and the front-facet cleaving after mounting. Modeling of the temperature distribution inside the QC laser shows a strong temperature gradient within the active waveguide core, which partly explains the still low maximum CW operating temperatures     

Thermal conductivity of ultra low-k dielectrics

The so-called 3ω measurement technique (transient hot wire method) was established to determine the thermal conductivity of thin films. Measurements of standard substrates and films validate the found thermal conductivity values and agree with published, commonly accepted values. The method was successfully applied to determine the thermal conductivity of porous low-k dielectric materials using special test structure fabrication. The thermal conductivity of the porous low-k dielectrics thus measured is only between 7 and 13% of the thermal conductivity of thermally grown silicon dioxide.     

Reliability analysis and design for the fine-pitch flip chip BGA packaging

The geometry of solder joints in the flip chip technologies is primarily determined by the associated solder volume and die/substrate-side pad size. In this study, the effect of these parameters on the solder joint reliability of a fine-pitched flip chip ball grid array (FCBGA) package is extensively investigated through finite element (FE) modeling and experimental testing. To facilitate thermal cycling (TC) testing, a simplified FCBGA test vehicle with a very high pin counts (i.e., 2499 FC solder joints) is designed and fabricated. By the vehicle, three different structural designs of flip chip solder joints, each of which consists of a different combination of these design parameters, are involved in the investigation. Furthermore, the associated FE models are constructed based on the predicted geometry of solder joints using a force-balanced analytical approach. By way of the predicted solder joint geometry, a simple design rule is created for readily and qualitatively assessing the reliability performance of solder joints during the initial design stage. The validity of the FE modeling is extensively demonstrated through typical accelerated thermal cycling (ATC) testing. To facilitate the testing, a daisy chain circuit is designed, and fabricated in the package for electrical resistance measurement. Finally, based on the validated FE modeling, parametric design of solder joint reliability is performed associated with a variety of die-side pad sizes. The results show that both the die/substrate-side pad size and underfill do play a significant role in solder joint reliability. The derived results demonstrate the applicability and validity of the proposed simple design rule. It is more surprising to find that the effect of the contact angle in flip chip solder joint reliability is less significant as compared to that of the standoff height when the underfill is included in the package.     

中红外量子级联激光器的光子集成（特邀）

中红外光子集成芯片在环保监测、医疗诊断和国防安全等领域具有广泛的应用前景,但激光光源与无源波导光路的片上集成仍是中红外集成光学需要攻克的关键难题之一。量子级联激光器（QCL）是中红外波段的重要半导体激光光源,文中介绍了近几年中红外QCL在光子集成方面的研究进展,包括InP基单片集成、硅基单片集成、硅基异质键合集成和III-V/锗混合外腔激光器。     

太赫兹Si/SiGe量子级联激光器波导模拟

波导层结构设计是制备太赫兹(THz)量子级联激光器的关键问题之一.本文基于德鲁得(Drude)模型,利用时域有限差分(FDTD)法,对Si/SiGe量子级联激光器的波导层进行优化设计,从理论上对传统的递变折射率波导、单面金属波导、双面金属波导以及金属/金属硅化物波导横磁模(TM模)的模式损耗和光场限制因子进行了对比分析.结果表明,金属/金属硅化物波导不但可以减小波导损耗,而且有很高的光学限制因子,同时其工艺也比双面金属波导容易实现,为Si/SiGe太赫兹量子级联激光器波导层的设计提供了一定的理论指导.     

太赫兹Si/SiGe量子级联激光器波导模拟

波导层结构设计是制备太赫兹(THz)量子级联激光器的关键问题之一.本文基于德鲁得(Drude)模型,利用时域有限差分(FDTD)法,对Si/SiGe量子级联激光器的波导层进行优化设计,从理论上对传统的递变折射率波导、单面金属波导、双面金属波导以及金属/金属硅化物波导横磁模(TM模)的模式损耗和光场限制因子进行了对比分析.结果表明,金属/金属硅化物波导不但可以减小波导损耗,而且有很高的光学限制因子,同时其工艺也比双面金属波导容易实现,为Si/SiGe太赫兹量子级联激光器波导层的设计提供了一定的理论指导.     

Al composition dependency of interface phonon in the wurtzite quantum cascade laser

The interface(IF) phonons of the wurtzite quantum cascade lasers(QCL) are investigated using the transfer-matrix method(TMM).The IF modes are presented in the longitudinal optical-phonon frequency for the Al0.2Ga0.8N/GaN and Al0.15Ga0.85N/GaN QCLs,and two IF modes can be changed into other modes if their wave numbers are less than the special values.Owing to the more dispersive properties of IF phonons with the increasing Al composition,the scattering rates in both QCLs increase with the Al composition.     

Thermal Modeling of Terahertz Quantum-Cascade Lasers: Comparison of Optical Waveguides

We compare a set of experimental lattice temperature profiles measured in a surface-emitting terahertz (THz) quantum-cascade laser (QCL) with the results of a 2-D anisotropic heat diffusion model. We evaluate the temperature dependence of the cross-plane thermal conductivity (kappa_perp) of the active region which is known to be strongly anisotropic due to its superlattice-like nature. Knowledge of kappa_perp and its temperature dependence is crucial in order to improve the temperature performance of THz QCLs and this has been used to investigate the longitudinal lattice temperature distribution of the active region and to compare the thermal properties of metal-metal and semi-insulating surface-plasmon THz optical waveguides using a 3-D anisotropic heat diffusion model.     

Resonant-phonon terahertz quantum-cascade laser operating at 2.1 THz (/spl lambda//spl sime/141 /spl mu/m)

The development of quantum-cascade lasers (QCLs) at 2.1 THz (/spl lambda//spl sime/141 /spl mu/m), which is the longest wavelength QCL to date without the assistance of magnetic fields, is reported. This laser uses a structure based on resonant-phonon depopulation, and a metal-metal waveguide to obtain high modal confinement with low waveguide losses. Lasing was observed up to a heatsink temperature of 72 K in pulsed mode and 40 K in continuous-wave (CW) mode, and 1.2 mW of power was obtained in CW mode at 17 K.