新型互补式宽频带线性移相器

提出了一种新型互补式宽频带线性移相器,分析和讨论了它的基本原理,给出了理论证明.移相器移相范围可达720°,带宽扩展一倍,非线性得到了完全补偿.实验与理论符合得很好.     

宽带可变移相器

本文对5—200M Hz宽带相位噪声测试设备中所需的宽带移相器进行了分析,提出了一种电路简单、性能优良的宽带移相器。理论分析和实验结果表明,该移相器能给出5—200M Hz频带内0—180°的相移,从而实现内接移相器进行相位噪声和信噪比的测量.     

宽频带微波移相器的优化设计

在探讨模拟360°移相器线性调相的基础上,对微波移相器的宽频带设计进行了详尽的理论分析,建立了优化设计模型,给出了优化设计的一系列图表及曲线.设计的宽频带360°线性移相器在实验上取得了较好的效果,理论与实践符合得较好.     

压电移相器的空间旋转误差建模与实验分析

通过对压电移相器在微位移过程中端面旋转的数学建模,对其空间旋转误差进行了理论分析;基于该数学模型,利用泰曼一格林干涉系统对两种不同工艺制作的移相器进行了在线检测,根据干涉条纹的旋转及间距变化,可以定量分析高精度移相器在微位移移相过程中其端面的旋转角度以及空间任意点的位移误差,并给出了相关实验结果.表明:用该方法在线检测各种不同工艺制作的移相器,对其端面上任意点由于端面旋转引起的空间位移误差检测灵敏度达到pm量级.在0～100 V驱动电压范围内进行在线移相检测,实验测量移相器的位移精度优于λ/200,对应相移精度高于0.06 rad.     

一种铁氧体移相器控制系统的设计

首先,阐述了一种铁氧体移相器控制系统,包含波控与移相器驱动电路两部分;然后,由项目设计角度出发,详细介绍了基于FPGA的波控电路设计方法,以及移相器位数与单位脉宽的关系;最后,阐明了移相器工作原理和移相器驱动电路的构成.     

集成光学移相器波长相关性的比较研究

移相器是一种常用的集成光学结构,其相移值的波长相关性决定了移相器的工作波长范围。针对移相器的波长相关性,文中对两种集成光学移相器设计方案（长度差方案和折射率差方案）所设计的二氧化硅基集成光学移相器进行了实验研究。在马赫-曾德尔干涉仪（MZI）的两干涉臂之间,采用两种移相方案分别设计制作180移相器,通过测试MZI的插入损耗与波长的依赖关系对两种移相器的波长相关性进行了比较。研究结果显示,折射率差方案所设计移相器的工作波长范围大约是长度差方案的1.8~1.9倍。这一实验结果与理论计算吻合,证明了折射率差方案设计的移相器的相移值波长相关性更小,因而具有更宽的工作波长范围。     

铁氧体双模器件的广义理论

铁氧体双模器件包括双模移相器,圆极化移相器,旋转场移相器.双模变极化器等等.其种类繁多,每种器件由若干基本双模段级联而成.每个基本单元上,外加磁场形式各不相同,有四磁极磁化场,纵向磁化场,双磁极磁化场及其混合磁化场.本文拟用统一的理论对其进行处理及分析并引入具体实例使用CAD技术进行计算,从而进一步确认理论的正确性.     

数控单片移相器的CAD

数控单片移相器的设计技术具有较大的特殊性与复杂性,必须依靠计算机辅助设计提高设计的准确性.对数控单片移相器的计算机辅助设计问题进行了论述,着重讨论了电路设计效率的提高及电磁场验证等问题,为数控单片移相器的研制提供了实用的解决方案.应用这一研究成果,成功开发出高性能X波段单片五位数字移相器.     

铁氧体移相器的近似计算

资料[1]报导了一种在雷达上颇有用途的铁氧体移相器与天线阵:并介绍了该器件的部分优点,但并未对这种器件的理论分析作任何说明。目前,在国内、外的文献上均未见到对此类器件的理论分析作完整的叙述。本文提出了一种比较完善的关于铁氧体移相器的理论分析方法,进行了模型简化和近似处理:并用计算机进行了证验,结果较为符合实际情况,所以,我们认为,用这种方法对铁氧体移相器进行理论分析,指导设计是比较可行的     

三公分压缩波导铁氧体移相器

在X波段分析计算了铁氧体移相器中高次模的归一化截止频率随移相器横向结构尺寸的变化规律;设计制做了三公分压缩波导铁氧体移相器,其性能测量结果与理论相符。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.