高价态差掺杂氧化物透明导电薄膜的研究

在实用的透明导电氧化物 (TCO)薄膜中 ,载流子迁移率主要是受电子与掺杂离子之间散射的限制。如果掺杂离子与氧化物中被替代离子的化合价相差较大 ,每个掺杂离子可以提供较多的自由载流子 ,则使用较少的掺杂量就可以获得足够多的自由载流子 ,而且可以获得较高的载流子迁移率和减少薄膜对可见光的吸收 ,是提高 TCO薄膜性能的一条捷径。采用反应蒸发法制备的掺钼氧化铟(In2 O3:Mo,简称 IMO)薄膜中 ,Mo6 +与 In3+的化合价态相差 3,远大于广泛研究和应用的 TCO薄膜材料 In2 O3:Sn、Sn O2 :F和 Zn O:Al中的价态差。IMO薄膜的电阻率可以低至 1.7× 10 - 4 Ω· cm,对 4μm以上波长红外线的反射率和可见光区域的平均透射率 (含 1.2 mm厚玻璃基底 )都高于 80 % ;载流子迁移率高达 80～ 130cm2 V- 1 s- 1 ,远超过其它掺杂 TCO薄膜 ;但是自由载流子浓度只有 2 .5× 10 2 0～ 3.5× 10 2 0 cm- 3,还有很大的发展空间可以进一步提高性能     

透明导电薄膜的研究进展

主要对目前国际上研究较多的几种透明导电薄膜,如金属膜、透明导电氧化物(TCO)薄膜(In2O3基、SnO2基、ZnO基及TiO2基薄膜)、p型材料及多层膜的性能、制备工艺、研究现状及最新进展进行了较为详细的阐述。介绍了一些较为特殊的透明导电薄膜材料。展望了透明导电薄膜未来的研究方向及发展前景。     

ITO透明导电薄膜的制备工艺研究

采用溶胶-凝胶法以InCl3·4H2O和SnCl4·5H2O为前驱物在玻璃基片上制备了ITO透明导电薄膜.详细研究了热处理初始温度、溶胶浓度、热处理温度、热处理时间、铟锡比例以及镀膜层数对薄膜光电特性的影响,得出了最佳工艺条件.结果表明,采用最佳工艺制备的ITO透明导电薄膜为体心立方的In2O3结构,Sn4 离子取代In2O3晶格中的In3 离子,样品不含低价氧化锡,薄膜方阻达到600 Ω/□,可见光透过率达到83%.     

有机衬底SnO_2∶Sb透明导电膜的研究

采用射频磁控溅射法在有机薄膜衬底上制备出 Sn O2 ∶ Sb透明导电膜 ,并对薄膜的结构和光电特性以及制备参数对薄膜性能的影响进行了研究 .制备的样品为多晶薄膜 ,并且保持了纯二氧化锡的金红石结构 .Sn O2 ∶ Sb薄膜中 Sb2 O3的最佳掺杂比例为 6 % .适当调节制备参数 ,可以获得在可见光范围内平均透过率大于 85 %的有机衬底 Sn O2 ∶ Sb透明导电薄膜 ,其电阻率～ 3.7e- 3Ω· cm ,载流子浓度～ 1.5 5e2 0 cm- 3,霍耳迁移率～ 13cm2 /( V · s )     

透明导电氧化物薄膜研究的新进展

透明导电氧化物(TCO)薄膜因其良好的光电性能,在光电器件上应用广泛,且已成为研究热点.p型TCO薄膜的出现开辟了透明导电氧化物研究的新领域,红外透明导电氧化物薄膜拓展了TCO薄膜的应用范围.该文综述了近几年p型TCO薄膜的研究进展,并简单介绍了新兴的红外透明导电氧化物薄膜的研究进展.     

In_2O_3∶Sn和ZnO∶Al透明导电薄膜的结构及其导电机制

基于对锡掺杂三氧化铟 ( Sn- doped In2 O3,简称 ITO)和铝掺杂氧化锌 ( Al- doped Zn O,简称 ZAO)薄膜退火前后 XRD数据的分析 ,研究了薄膜晶格常数畸变的原因 ,同时讨论了 ITO和ZAO薄膜的导电机制 .结果表明 ,低温沉积 ITO薄膜的晶格膨胀来源于 Sn2 +对 In3-的替换 ,导电电子则由氧缺位提供 ;高温在位制备和退火处理后薄膜的晶格收缩来源于 Sn4 + 对 In3+ 的替换 ,导电电子则主要由 Sn4 + 取代 In3+ 后提供 .低温 ZAO薄膜的晶格畸变来源于薄膜中的残余应力 ,导电电子的来源则同高温在位和退火处理后的薄膜一致 ,即由 Al3+ 对 Zn2 + 的替换和氧缺位两者     

透明导电氧化物薄膜研究现状与产业化进展

综述了 TCO(透明导电氧化物 )薄膜研究开发的历史与现状 ,展望了产业化前景。传统的 ITO薄膜性能优异 ,是重要的平面显示器件用材料。新型 Zn O薄膜成本低廉 ,极具发展潜力 ,有望在太阳能电池领域取代 ITO(掺锡氧化铟 )。多元复合氧化物薄膜是 TCO的发展方向之一 ;柔性衬底的应用扩大了 TCO薄膜的用途 ;溶胶 -凝胶制备工艺的开发促进了大面积 TCO薄膜的实用化     

In2O3：Sn和ZnO：Al透明导电薄膜的结构及其导电机制

基于对锡掺杂三氧化铟(Sn-doped In2O3,简称ITO)和铝掺杂氧化锌(Al-doped ZnO,简称ZAO)薄膜退火前后XRD数据的分析,研究了薄膜晶格常数畸变的原因,同时讨论了ITO和ZAO薄膜的导电机制.结果表明,低温沉积ITO薄膜的晶格膨胀来源于Sn2+对In3-的替换,导电电子则由氧缺位提供;高温在位制备和退火处理后薄膜的晶格收缩来源于Sn4+对In3+的替换,导电电子则主要由Sn4+取代In3+后提供.低温ZAO薄膜的晶格畸变来源于薄膜中的残余应力,导电电子的来源则同高温在位和退火处理后的薄膜一致,即由Al3+对Zn2+的替换和氧缺位两者共同提供     

掺P、B对纳米Zn-O薄膜电学特性的影响

现在普遍采用ITO薄膜(In2O3:Sn)作为太阳电池的窗口材料,但由于In资源的稀缺,使太阳能电池的成本增加.     

用第一性原理研究Sn掺杂 Ga1.375In0.625O3的电子结构和导电性

用第一性原理计算了Sn 替位Ga1.375In0.625O3化合物的Ga 原子(Ga1.25In0.625Sn0.125O3)和Sn 替位Ga1.375In0.625O3化合物的In原子(Ga1.375In0.5Sn0.125O3)的结构、电子能带和态密度。Ga1.25In0.625Sn0.125O3半导体材料比Ga1.375In0.5Sn0.125O3材料具有大的晶格参数和强的Sn–O离子键。在Sn掺杂 Ga1.375In0.625O3化合物中,Sn 原子优先取代In 原子。Sn掺杂 Ga1.375In0.625O3化合物显示n型导电性, 杂质能带主要由Sn 5s 态组成。Ga1.375In0.5Sn0.125O3化合物的光学带隙大于Ga1.25In0.625Sn0.125O3化合物的光学带隙。 Ga1.25In0.625Sn0.125O3 具有小的电子有效质量和大的电子迁移率,Ga1.375In0.5Sn0.125O3 具有多的相对电子数和好的导电性。     

Aqueous Deposition of Ultraviolet Luminescent Columnar Tin‐Doped Indium Hydroxide Films

Indium tin oxide (ITO) has attracted intense interest as the most important transparent conducting oxide (TCO) that sees wide use in many opto‐electronic and photo‐chemical devices. The goal of this study is to explore the possibility of depositing ITO thin films using a bioinspired aqueous deposition route as an alternative. On the surface of sulfonated‐self assembled monolayers, Sn‐doped indium hydroxide films are obtained via a hydrogen peroxide‐assisted method. As a result, the as‐deposited indium tin hydroxide films possess a single hexagonal phase of In(OH)₃· xH₂O (0 ≤ x ≤ 1) with Sn doping percentage of (1.7 ± 0.2) at % and a column‐like hierachical microstructure. Structural, compositional and property studies, including electron microscopy, X‐ray diffraction, photoelectron spectroscopy, optical transmittance, photoluminescence and four‐probe conductivity measurements, are conducted. The possible mechanism based on oriented attachment is discussed for the film growth. Strong room temperature photoluminescence within the near UV range is observed in the case of Sn‐doped, but not in the one of the pure In(OH)₃· xH₂O films. Annealing of the indium tin hydroxide films above 200 °C gives nanocrystalline Sn:In₂O₃ films with higher UV and visible transparency and electrical conductivity compared with those of pure In₂O₃ films. The influence of annealing atmosphere is investigated.     

PECVD沉积微晶硅薄膜过程中氢原子对透明导电膜的影响

研究了等离子体放电过程中氢原子对单层SnO2和SnO2/ZnO双层透明导电膜的影响.发现当衬底温度超过150℃,H等离子体处理使SnO2薄膜的透光率显著降低.当在SnO2薄膜表面沉积一层ZnO时,既使ZnO膜的厚度为50nm,也可有效地抑制H原子对SnO2的还原效应,并在SnO2/ZnO双层膜上制备了转换效率为3.8%的微晶硅薄膜太阳电池.     

Potential gain in photocurrent generation for Cu(In,Ga)Se2 solar cells by using In2O3 as a transparent conductive oxide layer

This study highlights the potential of atomic layer deposited In₂O₃ as a highly transparent and conductive oxide (TCO) layer in Cu(In,Ga)Se₂ (CIGSe) solar cells. It is shown that the efficiency of solar cells which use Zn‐Sn‐O (ZTO) as an alternative buffer layer can be increased by employing In₂O₃ as a TCO because of a reduction of the parasitic absorption in the window layer structure, resulting in 1.7 mA/cm² gain in short circuit current density (J_sc). In contrast, a degradation of device properties is observed if the In₂O₃ TCO is combined with the conventional CdS buffer layer. The estimated improvement for large‐scale modules is discussed. Copyright © 2015 John Wiley & Sons, Ltd.     

复合效应对掺杂氧化物透明导电薄膜的影响

首次引入复合效应对不同价态差的掺杂氧化物透明导电（TCO）薄膜的载流子浓度及其迁移率进行了分析。对于较高温下制备的TCO薄膜,对载流子迁移率起主要作用的散射机制是带电离子散射和电中性复合粒子散射。带电离子散射迁移率与带电离子的有效电荷数大致呈反比关系,在载流子浓度相同的情况下,随着复合几率增大,价态差分别为3和4的TCO薄膜中的带电离子的平均有效电荷分别趋于1和2,因此带电离子散射迁移率也随之增大,分别趋于价态差为1和2的TCO薄膜的带电离子散射迁移率。而对于价态差为3的TCD薄膜,由于电中性复合粒子的数量较少,对载流子的散射最弱,因此在复合几率较大的情况下,价态差为3的TCO薄膜有可能获得比价态差为1的TCO薄膜更高的载流子迁移率。     

太阳电池中CdS薄膜的制备及其性能的研究

分别采用化学池沉积(CBD)和真空蒸发法,在三种衬底(玻片、ITO玻片、SnO2玻片)上沉积CdS薄膜,并利用扫描电镜(SEM)、透射光谱、X射线衍射(XRD)等方法对沉积膜进行了测试分析,同时阐述了两种不同方法下CdS膜的生长沉积机制。     

sol-gel法制备ATO薄膜的结构与光学性能研究

采用sol-gel法在玻璃衬底上制备ATO(SnO2∶Sb)薄膜,并用XRD、SEM、紫外-可见光谱和光致发光对薄膜进行了表征,研究了ATO薄膜的结构和光学性能。结果表明:ATO薄膜微晶晶相与SnO2一致,仍然是四方金红石结构;ATO薄膜在可见光区的透过率超过80%,当r(Sb∶Sn)为0.15时,ATO薄膜的透过率最高达87%;ATO薄膜在344～380nm处有一个很强的紫外-紫光发射带,随着Sb掺杂量的增加,发射峰逐渐变强,在r(Sb∶Sn)为0.25时,发射峰相对强度达302.4。     

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

Transparent conducting oxides (TCOs) are increasingly critical components in photovoltaic cells, low‐e windows, flat panel displays, electrochromic devices, and flexible electronics. The conventional TCOs, such as Sn‐doped In₂O₃, are crystalline single phase materials. Here, we report on In‐Zn‐O (IZO), a compositionally tunable amorphous TCO with some significantly improved properties. Compositionally graded thin film samples were deposited by co‐sputtering from separate In₂O₃ and ZnO targets onto glass substrates at 100 °C. For the metals composition range of 55–84 cation% indium, the as‐deposited IZO thin films are amorphous, smooth (R_RMS < 0.4 nm), conductive (σ ∼ 3000 Ω⁻¹ · cm⁻¹), and transparent in the visible (T_Vis > 90%). Furthermore, the amorphous IZO thin films demonstrate remarkable functional and structural stability with respect to heating up to 600 °C in either air or argon. Hence, though not completely understood at present, these amorphous materials constitute a new class of fundamentally interesting and technologically important high performance transparent conductors.     

Improving carrier mobility with vanadium doping of transparent conducting CdO

Cadmium oxide (CdO) is a transparent conducting oxide (TCO) with versatile applications, many of which are linked to its transparency in the Vis/NIR spectral range in addition to its unique electrical conductivity. Its optoelectronic properties can be controlled in order to bring them into a desired choice by doping method. Usually resistivity of TCO could be reduced by increasing N_el, which, in turns, reduces the transparency (especially in the NIR region) of TCO. Therefore, it is important to seek ways to reduce ρ by increasing of μ_el (rather than N_el) that also reduces the absorption.In the present work, CdO thin films doped with different amounts of vanadium (V) ions were deposited on glass and silicon wafer substrates by physical vapour deposition method. The films were characterized by X-ray diffraction (XRD), X-ray fluorescence (XRF), optical absorption spectroscopy, and dc-electrical measurements. The obtained results show significant improvements in the conductivity (σ), mobility (μ), and carrier concentration (N_el) of host CdO. The measured utmost enhancement in conductivity by 420%, mobility by 766%, and carrier concentration by 201% for CdO films doped with 4–5 wt% V. This suggests the possibility of using V-doped CdO films in different TCO applications.     

掺碳氧化铟薄膜的铁磁性研究

采用磁控溅射法在Si(100)衬底上制备了掺碳氧化铟(In2O3:C)薄膜,溅射过程分别在衬底温度为室温和550℃的条件下进行。通过测试所制In2O3:C薄膜的XRD谱和磁化曲线,研究了In2O3:C薄膜的结构和铁磁性能,并探讨了其铁磁性的起源。结果显示,随着含碳量的增加,In2O3:C薄膜的饱和磁化强度先增大后减小;此外,氧空位缺陷浓度高的样品其铁磁性也更强,这表明氧空位缺陷与In2O3:C薄膜的铁磁性起源有直接的关系。     

离子注入对ITO薄膜电学特性的影响

对系列In2O3∶Sn (ITO)薄膜样品分别实施了不同剂量的Sn+, Ag+ 和Mo+离子注入并将它们在250 ℃下进行了热处理.利用霍耳测量研究了原始样品及注入和退火前后各样品的电学特性.研究了ITO薄膜的电学参数受离子注入的种类及剂量的影响.实验证明不同种类的离子注入会不同程度地降低ITO的导电性能,但热处理的效应与之相反.3种金属中,Sn+离子对薄膜造成的注入损伤最小,而高价的钼离子可以替换铟离子的位置成为施主,当注入剂量为1×1015 cm-2时,经过Mo+离子注入和后续退火的ITO薄膜,载流子浓度提高了14%.