一种新型的高均匀性非制冷红外读出电路研究

针对非制冷红外探测器系统,设计了一种高均匀性的读出电路(ROIC)结构。由于非制冷红外焦平面阵列中微测辐射热计的制作工艺存在偏差导致探测器输出存在非均匀性,其中列条纹尤为明显。所提出的读出电路能有效地消除列条纹、提高均匀性。该ROIC已在0.5?m CMOS工艺下成功流片,并应用到阵列大小为320×240的非制冷微测辐射热计焦平面上。测试结果表明:固定图像噪声(FPN)仅为0.088V,无明显列条纹。该ROIC在高均匀性的非制冷红外探测器上有着广泛的应用。     

一种具有衬底温度补偿功能的非制冷红外读出电路

针对非制冷红外探测器系统,设计了一种无需衬底温度稳定器——热电制冷器(TEC)的读出电路(ROIC)结构.首先分析了衬底温度对微测辐射热计的特性的影响,利用ROIC对衬底温度变化引起的微测辐射热计的特性的变化进行补偿,实现ROIC的输出信号与衬底无关.该ROIC已在0.5 μm CMOS工艺下成功流片,并应用了到阵列大小为320×240的非制冷微测辐射热计焦平面上.测试结果表明:在衬底温度变化20 K时,ROIC输出信号仅变化2 mV,实现了去除TEC后衬底温度补偿的功能,有效地降低了系统功耗.该ROIC在低功耗,小体积的非制冷红外探测器上有着广泛的应用.     

热红外探测器的最新进展

对基于热敏电阻的微测辐射热计和基于热释电效应的热释电红外探测器在探测元材料、焦平面阵列(FPA)结构和读出电路(ROIC)3个方面进行了分析对比,讨论了这两种非制冷探测器热电材料的选取原则,FPA单元的热绝缘构造和读出电路的组成方式,并介绍了它们的最新进展和发展方向。     

横向多晶硅p+p-n+结非致冷红外焦平面

应用标准CMOS工艺,同时结合体硅微机械加工技术,研制成功横向多晶硅p p-n 微测辐射热计单元;基于研制成功的微测辐射热计,设计了规模为128×128面阵的非致冷红外焦平面.采用标准CMOS工艺制作横向多晶硅p p-n 结热敏响应元和读出电路;在CMOS工艺完成后,辅以与CMOS工艺兼容的体硅微机械加工工艺,制备微桥形式的热绝缘结构,从而方便地实现了CMOS读出电路与探测器阵列的单片集成.在3～5 μm红外波段,微测辐射热计的电压响应率为5.7×103 V/W,黑体探测率D·为1.2×108 cm·Hz1/2·W-1.焦平面采用行读出模式的结构,信号读出采用栅调制积分电路,输出级采用外接负载电阻的源极跟随电路,将探测器单元产生的信号按顺序串行单端输出.     

非制冷焦平面热像仪温度控制设计

在分析法国ULIS公司生产的320×240长波红外非制冷微测辐射热计焦平面阵列探测器UL01011技术参数的基础上,论述了微测辐射热计非制冷红外焦平面热像仪温度控制的必要性,指出了温度控制设计的实质。并讨论了单片机、线性模式单芯片热电制冷器控制器和开关模式单芯片热电制冷器控制器温控方案的优缺点。提出了使用AD公司生产的全新单芯片热电制冷器控制器ADN8830的温控设计方案,以该芯片为核心设计出适合320×240长波红外非制冷微测辐射热计焦平面阵列探测器UL01011的温度控制电路,该电路能够把焦平面阵列温度变化控制在30±0.01℃范围内,使探测器工作在最佳温度。该方案功耗低、效率高、体积小,是一种较好的温控设计方案。     

非制冷色散式成像光谱仪辐射传递模型

根据接收信号信噪比,研究了基于非制冷微测辐射热计阵列构造色散式成像光谱仪的可行性.综合考虑目标红外辐射特性、大气传输透过率、仪器接收孔径、色散式光谱仪辐射传递特性、红外阵列探测器参数、数据链传输等环节,建立了完善的色散式长波红外成像光谱仪辐射能量传递模型.选用典型地物红外发射率数据,非制冷微测辐射热计红外焦平面阵列参数,利用低分辨率大气辐射传输计算软件LOWTRAN生成大气红外透过率曲线,依据传递模型,计算了以非制冷微测辐射热计阵列为探测器的色散式长波红外成像光谱仪可达到的光谱分辨率,验证了依据非制冷红外探测器构建小型红外成像光谱遥感器的潜力.     

微测辐射热计的建模与仿真

微测辐射热计是一种应用前景广阔的非制冷型红外焦平面器件,本文对微测辐射热计 进行了建模和仿真,并利用该模型分析、仿真了复位积分放大器CTIA (Capacitive Transimpedance Amp lifier)输出的微测辐射热计对不同黑体目标的输出电压和像元的响应率,为进一步设计、优化微测辐射热计读出电路打下了基础。     

非致冷红外焦平面阵列读出电路的设计和SPICE模拟

读出电路是非致冷红外焦平面阵列的核心部件之一,对电路进行SPICE模拟是验证电路的重要手段。针对近年来得到迅猛发展的微测辐射热计(VOx)非致冷红外焦平面阵列的特点,提出了相应CMOS读出电路的设计方案,并用PSpice9.2给出了4×4CMOS读出电路的实现和精确的模拟结果。模拟结果表明,该方案是适合微测辐射热计非致冷红外焦平面阵列读出电路一种较为理想的形式,同样也适合于大阵列(如160×120和320×240)的CMOS读出电路。     

一种具有片上补偿功能的红外读出电路

针对非制冷红外探测器系统,提出了一种恒流偏置的红外读出电路(ROIC),该电路具有衬底温度补偿功能,且可实现片上偏移非均匀性补偿。基于微测辐射热计等效电阻受目标温度、衬底温度等影响的等效模型,每个读出通道采用两个盲电阻以消除衬底温度的影响,同时使用DAC逐点调节参考电压,以完成片上偏移非均匀性补偿。该ROIC应用到阵列大小为320×240的非制冷微测辐射热计焦平面上,已在CSMC 05MIXDDST02的0.5μm CMOS标准工艺下成功流试验片。电路测试结果表明:对于常温目标,当衬底温度变化60 K时,输出电压变化小于500 mV;经偏移非均匀性补偿后,阵列的固定图像噪声为11.8 mV。该ROIC适用于应用于复杂温度环境的高均匀性非制冷红外探测器。     

一种新型低噪声高均匀性红外焦平面读出电路

针对非制冷微测辐射热计焦平面阵列,设计了一种低噪声、高均匀性的读出电路。该读出电路结合相关双采样技术和自归零技术,对固定图像噪声以及l/f噪声都能起到很好的抑制作用。目前,该电路已应用到160×120阵列的非制冷微测辐射热计焦平面上,并在0.5μm CMOS工艺下成功流片。测试结果表明,固定图像噪声仅为0.087 V,均方根噪声为256μV。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.