基于菲涅耳反射的准分布式光纤温度传感器

基于菲涅耳反射原理和光时域反射(OTDR)技术,提出了一种新型的、结构简单的准分布式光纤温度传感器.传感器由两个端面抛光的光纤对接构成,并在两端面间隙中填充温敏材料.传感器周围温度变化改变温敏材料的折射率,从而引起菲涅耳反射强度的变化.将三个传感头串联,利用OTDR探测各传感器菲涅耳反射的微弱变化实现温度传感和传感器定位.在-30～80℃范围内,随着温度升高,该系统各个传感头的菲涅耳反射强度单调增大,且温度传感特性具有良好的重复性,同时具有极低的附加损耗.     

基于侧边抛磨多模光纤的高灵敏度折射率传感器

提出一种可于生物传感的侧边抛磨多模光纤(SPMMF)折射率传感器。针对1.300~1.430折射率范围传感特性,研究了纤芯直径50.0、62.5和105.0μm的多模光纤(MMF)侧边抛磨不同深度时SPMMF折射率传感器的光谱特性和光功率传输特性。结果表明,在1.300~1.430折射率范围内,光纤纤芯直径和剩余半径(抛磨面到纤芯中心的距离)越小,传感器灵敏度越高;纤芯直径为50.0μm、剩余半径为0μm时,可以获得最高达42.23dB/RIU的灵敏度,最小分辨率为2.37×10-5RIU;纤芯直径为105.0μm、剩余半径30μm时,SPMMF折射率传感器仍有10-5 RIU量级的分辨率。     

光纤布拉格光栅的折射率传感研究

采用光纤布拉格光栅制备折射率传感器,研究光纤光栅的折射率传感灵敏度与其包层直径之间的关系。理论分析可得,光栅包层直径越小,Bragg波长的偏移量随环境折射率变化的影响越大,这样就能使实验中光栅所反射的LD光功率变化(传感灵敏度)越明显。利用氢氟酸溶液腐蚀光栅包层的方法,得到不同包层直径的光纤Bragg光栅折射率传感器。实验指出,包层直径减小时,光栅可传感的折射率范围会缩小,而其折射率的传感灵敏度却会增大,如包层直径为8.9 μm时,折射率的检测范围为1.3872~1.4730,其最大灵敏度值达到了224.0320 dBm/RIU。     

单芯光子晶体光纤边孔SPR折射率传感特性研究

为了实现高灵敏的表面等离子体共振（SPR）折射率传感,提出一种基于大纤芯的单芯光子晶体光纤SPR传感结构,采用全矢量有限元方法对其传感特性进行了数值仿真和分析。结果表明,该结构具有比较宽的折射率传感范围（1.36~1.55）,同时具有较高的传感灵敏度,平均传感灵敏度达12139nm/RIU;在折射率1.36~1.42区域,线性传感灵敏度为5646.4nm/RIU,线性度为0.9317;而在折射率1.42~1.57区域,传感灵敏度达到15326.8nm/RIU,线性度为0.98738,传感特性出现明显的线性分段情况。该研究结果为实现高灵敏的光子晶体光纤SPR传感器提供了重要的理论依据。     

基于表面等离子体共振的光子晶体光纤折射率传感器的设计与分析

为了实现光子晶体光纤在近红外波段下的高灵敏度传感,设计了一种基于表面等离子体共振的光子晶体光纤(SPR-PCF)折射率型传感器。光纤内部的空气孔呈六边形排列,金纳米层完全包覆光纤外璧并与圆形待测物通道接触。利用有限元矢量软件COMSOL对SPR-PCF传感器的光学特性进行数值模拟仿真,得到不同待测物折射率的共振波长并绘制出纤芯损耗光谱,通过纤芯损耗光谱来对SPR-PCF传感器的传感特性进行分析。实验结果表明,其折射率测量区间为1.31~1.38,最大光谱灵敏度为104 nm/RIU,最大振幅灵敏度为200RIU-1,折射率测量精度为2.94×10-5RIU。     

高灵敏度多模干涉-异质无芯光纤折射率传感器

基于多模干涉理论和自映像效应,设计了一种高灵敏度多模干涉-异质无芯(SNS)光纤折射率传感器。利用纤芯失配在包层激发的高阶模与无芯光纤中产生的基模耦合产生多模干涉来实现其对折射率的传感测量。应用波束传播法(BPM)数值模拟了传感器在不同折射率条件下光的透射谱,讨论了无芯光纤的长度及外部环境折射率等参数对传感器性能的影响。通过无芯光纤SNS结构传感器的样品制备,测试了多组不同浓度蔗糖溶液下的透射谱,实验结果与数值模拟结果一致。结果表明:在折射率1.330~1.419范围内,透射谷的波长灵敏度达到189nm/RIU,透射率灵敏度达到-40%/RIU。     

基于回波干涉效应的新型光纤信号调制器

理论分析了光纤信号传输系统中光纤端面菲涅耳反射所引起回波的多光束干涉效应,计算了光纤端面的反射回波相干叠加后回波光强随光纤端面间距的变化,针对光的振幅调制设计了基于回波干涉效应的新型光纤信号调制.实验中,从光纤耦合器输入端输入光波,将调制信号以电压形式加载于压电陶瓷管,使其伸缩振荡来控制两光纤端面间距离,光信号在光纤端面发生菲涅耳反射产生回波并发生回波干涉效应,从光纤耦合器回波端得到回波信号.实验结果表明,这种光纤信号调制器获得调制度约为95%,信噪比约为10 dB,带宽约为200 kHz.     

基于FBG反射谱信噪比测量的重金属离子传感器

实现了一种基于光纤布拉格光栅(FBG)及其末端 镀膜的高灵敏度Ni²⁺浓度光纤传感器。壳聚糖和聚丙烯酸(PAA) 通过自组装,以聚合物膜的形式直接聚合沉积在光纤末端。当Ni2＋因螯合作 用而被膜吸附时,膜的折射率发生变化,从而 使光纤末端的菲涅尔反射发生改变。通过测量菲涅尔反射光谱中信噪比(SN R)的变化,就可以得到Ni2＋的浓度。实验测得传感 器的最大线性灵敏度可达35.52dB/mM。利用SNR解调的方法不仅可以消除光源功率波动对测量精度的影响,同时可以利 用FBG谐振波长的漂移测量温度变化。本文实现的Ni2＋浓度光纤传感器,具有良 好的灵敏度、成本低和结构简单等优点。     

用于测量折射率的光纤迈克尔逊干涉型传感器

提出了一种基于单模光纤-四芯光纤-薄芯光纤(SMF-FCF-TCF)迈克尔逊干涉结构的折射率传感器。采用直接熔接的方式将各光纤进行熔接,由于各光纤之间纤芯的直径不匹配,因此在光纤的熔接处会发生光的激发和耦合。薄芯光纤端面涂覆有一层银面反射膜并用紫外固化胶进行保护来增强光在端面的反射率。四芯光纤作为传感结构中的耦合器,激发了更多的光进入薄芯光纤的包层中,提升了传感器的灵敏度。对传感器的折射率和温度传感特性分别进行了实验探究,实验结果表明,在折射率1.3333~1.3794范围内的灵敏度为137.317 nm/RIU,线性度为0.999,并且温度对传感器的影响较小。该传感结构熔接方式简单,在折射率测量领域具有一定的应用前景。     

多芯光纤构成的温度与折射率同时测量的光纤传感器

本文设计了一种“单模光纤－多模光纤－多芯光纤－多模光纤－单模光纤”的全光 纤 Mach-Zehnder干涉仪结构。在该结构中多模光纤充当耦合器,不同模式的光在多芯光纤中 传输时将 产生光程差,形成Mach-Zehnder干涉。当环境温度和折射率变化时,通过分析干涉仪透射 光谱中不 同谐振峰的漂移量,实现折射率与温度的测量。实验结果表明,传感器低温灵敏度最高达到 46.0 pm/℃, 高温灵敏度最高达到109.0 pm/℃,折射率灵敏度最高达到54.3 nm/RIU(RIU为折射率单位)。另外, 通过同时监测传感器透射谱的两个谐振峰值波长随环境温度和折射率的漂移情况,实现了环 境温度 与折射率的同时测量,不存在交叉敏感。该传感器结构简单、制作容易、重复性好、响应稳 定、具 有多路复用功能,在传感领域有广泛的应用前景。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.