石墨烯/光子晶体混合结构的可调谐表面等离激元自准直

文章探究了中红外波段表面等离激元在石墨烯/光子晶体混合结构传输的自准直现象。在石墨烯的硅基底上设计了二维周期圆形空气孔结构,该结构能够实现表面等离激元光子晶体的特性。运用平面波展开法计算石墨烯表面等离激元光子晶体的能带,并计算出等频线。从该结构的等频线可以获得自准直的频率。我们进一步应用有限时域差分方法计算自准直频率在结构中的传输,可观察到该频率下石墨烯上的表面等离激元电场在通过该结构时出现自准直现象。在基底参数不变情况下,通过调节石墨烯的费米能,来改变等离激元光子晶体的能带,从而调节等离激元自准直频率。文章提出的基于石墨烯的等离激元自准直器件,有望应用于未来集成等离激元器件之间的连接。     

中红外-甚长波多模式谐振三波段超材料吸波体（特邀）

超材料吸波体可以将入射电磁波集中在亚波长尺度内并进行高效吸收,因此在光电探测、热发射器、能量收集等领域具有广泛的应用前景。迄今报道的多波段超材料吸波体主要为某一波长范围内多个相近波长的完美吸收,想要实现大光谱范围内的多波长吸收则需要多个结构的联合工作。基于钛十字形谐振器-氮化硅介质层-钛反射层三层结构,设计并数值模拟了一种工作波长范围跨越中波红外、长波红外以及甚长波红外的三波段超材料吸波体。利用超材料吸波体激发的传播型表面等离激元谐振、局域型表面等离激元谐振以及氮化硅本征吸收模式,实现了4.8 μm、9.1 μm和18 μm三个波长处97.3%、94.4%和93.6%的高吸收率。超材料吸波体的工作波长可以通过改变其几何参数进行调节,且具有偏振和入射角不敏感性。该工作中所用材料均为现有工艺中的常用材料,在气体检测、红外成像等领域具有应用前景。     

等离激元微腔耦合长波红外量子阱高消光比偏振探测器（特邀）

长波红外偏振探测器能够大幅提升对热成像目标的识别能力。受制于衍射极限的物理限制,目前的微线栅偏振片型长波红外偏振探测器的偏振消光比基本上只能做到最高10∶1左右。文中采用金属/介质/金属的等离激元微腔结构,将量子阱红外探测激活层相嵌在微腔之中。由于上、下金属之间的近场耦合形成了在双层金属区域的横向法布里-珀罗共振模式,构成等离激元微腔。文中利用微腔的模式选择特性及其与量子阱子带间跃迁的共振耦合,将量子阱子带跃迁不能直接吸收的垂直入射光耦合进入等离激元微腔并转变为横向传播,从而能够被量子阱子带吸收,实现了在长波红外13.5 μm探测波长附近偏振消光比大于100∶1的结果。相关工作为发展我国高消光比长波红外偏振成像焦平面提供了全新的物理基础和技术路径。     

银纳米线-三角片耦合结构发射光的偏振依赖特性

银纳米线可以承载传播的表面等离激元,纳米片可以产生局域的表面等离激元,二者形成的耦合结构不但可以将传播光场耦合为局域增强光场,还可以调控光场的偏振态等性质,为纳米光调控提供新的自由度。本团队构建了银纳米线-三角片耦合结构,并发现耦合结构的发射偏振与纳米线-三角片的耦合方式有关：当三角片与纳米线之间是“线”接触耦合时,耦合结构的发射偏振随着激发偏振的旋转而旋转;当二者是“点”接触耦合时,无论激发偏振如何变化,发射偏振角度几乎保持160°不变。进一步,利用时域有限差分法验证了出射偏振对入射偏振的依赖特性。通过计算自由电流密度体积分揭示了纳米线中传播的表面等离激元模式与银纳米线-三角片耦合模式的转化机制,以及不同表面等离激元模式的叠加对发射偏振的调控。这些发现为纳米尺度上的光调控以及在纳米尺度上构建纳米光子器件提供了更多灵活性。     

表面等离激元波导-腔结构中的Fano共振

正表面等离激元Fano共振是由金属纳米结构中窄带的暗态和宽带的明态相互耦合产生的,由于它具有陡的非对称响应谱和场增强效应,因此在纳米光子器件中具有重要应用,如调制器、光开关、传感器等。利用有限元和散射矩阵理论相结合的方法研究了表面等离激元波导-腔结构中Fano共振的物理机制,包括耦合谐振腔效应、多模共振耦合效应等、基于上述表面等离激元波导-腔结构中的Fano共振,实现了分柬、光开关、传感器等纳米光子器件、由于表面等离激元波导具有亚波长束缚并在芯片上易于集成,这些基于表面等离激元波导-腔结构的纳米光子器件在高度集成光子回路中具有重要应用前景、     

磷烯π型结构中等离激元诱导透明现象

磷烯因其层数可调的带隙、高的载流子迁移率及面内各向异性等优点为构建基于二维材料的光电子器件提供了新的选择。用时域有限差分法数值模拟了磷烯π型级联和紧凑结构中的等离激元诱导透明现象,通过改变结构分布及磷烯的费米能级等参数,实现了中红外到远红外的宽范围可调谐等离激元诱导透明。其中,透明窗口数目、强度以及位置均实现了灵活调制。此外,研究了诱导透明窗口对偏振角敏感的特性。所得结果为开发基于磷烯等离激元的生物传感器、光电探测器及光开关等提供了参考。     

基于表面等离激元的超薄隐身套的实验验证

针对超材料透波隐身套厚度大的问题,提出了基于表面等离激元的超薄隐身套,通过超材料套层将入射电磁波耦合为表面等离激元波并传输至障碍物后方,实现超薄透波隐身。设计了基于开口谐振环的表面等离激元耦合层,将其包覆在金属圆柱表面,制作了基于表面等离激元的超薄隐身套原理样件并进行了对比测试。实验结果表明,该隐身套在其厚度仅为工作波长的1/30 时具有良好的绕行透波性能。     

基于亮模式调控的双频等离激元诱导透明超材料

设计了一种太赫兹波段双频等离激元诱导透明(DBPIT)超材料。该超材料由位于中央的空竹(Diabolo)型结构单元 和对称分布于其两侧的不同尺寸的两个开口谐振环(SRR)组合而成,空竹结构单元和两 个SRR分别充当该体系的亮、暗 模式谐振器。数值仿真结果表明,超材料透射频谱具有明显的双透明窗特征,通过调节亮 模式的几何尺寸,可以实现对双透 明窗透射幅度的调控。基于经典的三谐振子模型(three-oscillator model)及表面等 离激元(surface plasmon theory)理论, 阐述了DBPIT效应的物理机制:亮模式分别与两个暗模式之间的近场强耦合。亮模式采用 具有磁场增强功能的空竹结构, 有助于提高暗模式的磁场响应,进而大幅度增强亮、暗模式之间的耦合,达到提高透明 窗透射幅度的目的。这项工作为设计 具有高度灵活性的多波段功能器件(如慢光器件、可调谐传感器和多波段选择性开关器 件)开辟了新的途径。     

等离激元增强金硅肖特基结近红外光电探测器进展

表面等离激元共振衰减诱导热电子,因其能量高、分布窄、打破半导体禁带宽度限制等特点被广泛应用于拓展半导体光电转换的响应光谱,如拓展宽禁带半导体的响应光谱至可见光波段,拓展硅的响应波段至近红外。此外,还可以通过调节表面等离激元结构调控响应光谱和实现偏振探测,在实现硅基近红外光电探测领域具有重要的应用价值。从表面等离激元以及表面等离激元内光电效应的机理出发,综述了表面等离激元热电子原理在实现硅基近红外光电探测方面的研究进展,并总结了表面等离激元结构的形貌,尺寸、分布等因素对热电子的产生（外量子效率）和注入效率（内量子效率）的影响。最后展望了基于表面等离激元结构的硅基肖特基结近红外光电探测的研究方向。     

基于等离激元纳米结构非对称集成的二维材料自驱动光响应增强的研究进展（特邀）

金属-二维材料-金属是最常见的二维材料光探测器件的结构。由于结构简单、易于集成,该类器件受到最广泛的关注和研究。其自驱动光探测的模式具有很低的暗电流,有望成为高性能红外探测的新途径。然而金属-二维材料-金属的自驱动光探测存在两个瓶颈问题:（1）反对称的金属-二维材料结区引起的泛光照射下光响应的抵消;（2）二维材料有限光吸收导致的低响应率。文中介绍了利用等离激元纳米结构的非对称集成引入非对称的光耦合,从而打破泛光照射下二维材料与两端电极接触区域产生的光电流的对称性,实现净的自驱动光响应;同时利用等离激元纳米结构产生的局域强光场提高二维材料光吸收率和光响应率的一系列研究进展。在石墨烯等离激元纳米谐振腔复合结构中,实现两个电极附近的光响应对比度超过100倍,突破了对称光耦合导致的光响应抵消的难题。由于具有将入射光耦合成局域模式的优越能力,等离激元纳米谐振腔比亚波长金属光栅更有效地提高石墨烯响应率一个数量级以上。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.