p型GaN上透明电极的研究现状

GaN基发光器件通常采用金属作为p型GaN的接触电极,但由于金属透光率低,大大降低了器件的发光效率,解决办法之一就是采用透明导电薄膜作为其接触材料.本文在分析p-GaN上难以形成欧姆接触原因的基础上,提出了获得良好电极性能的途径,并从电极的制备方法、光电特性等方面讨论了近年来透明导电薄膜作为p-GaN接触的研究进展,并对未来的发展方向进行了简要说明.     

p型透明导电氧化物CuAlO2薄膜的研究进展

透明导电氧化物(TCO)的出现开拓了光电子器件研究的新领域.但p型TCO的相对匮乏严重制约了透明氧化物半导体(TOS)相关器件的开发与应用.CuAlO2作为一种天然的p型TCO成为近年来p型TCO的研究热点.介绍了p型TCO的研究现状,综述了不同制备方法制备p型CuAlO2薄膜的研究进展,以及在器件方面的应用,并对其前景进行了展望.     

P型透明导电SnO2薄膜的研究进展

SnO2薄膜是一种应用广泛的宽禁带半导体材料.近几年来,随着对SnO2的光电性质及其在光电器件方面应用的开发研究,SnO2薄膜成为研究热点之一.制备掺杂的p型SnO2是形成同质p-n结以及实现其实际应用的重要途径.近年来,国内外在p型SnO2薄膜研究方面取得了较大的进展.目前报道的p型SnO2薄膜的最高电导率为5.952Ω-1cm-1.并且得到了具有较好非线性伏安特性的铟锡氧化物的透明p-n结.本文就其最新进展进行了综述.     

柔性透明导电膜衬底材料的研究进展

综述了柔性透明导电膜材料的应用以及可用作柔性透明导电膜衬底材料的种类、存在的问题和可行的解决方法。介绍了柔性透明导电膜材料的优点、应用和国内外研究现状。重点介绍了可用作柔性透明导电膜衬底的聚合物材料—聚酰亚胺和聚酯,分析了各自的特点。通过分析柔性衬底存在的不足,寻求可行的解决方法,使柔性衬底可以更好地满足导电膜对衬底材料的要求,为柔性衬底材料的设计提供依据。     

p型含铜透明导电材料的新进展

基于p型透明导体在平面显示、透明二极管和太阳能发电等领域的广泛应用前景, 一些含铜的透明导体材料因具有优异的性能而备受人们关注. 本文综述了p型含铜透明导体的研究现状. 重点介绍含铜的氧化物和氧硫化合物的本征及其掺杂研究进展, 从结构化学的角度论述了此类化合物p型导电的机理及共性. 研究结果表明, 含[Cu₂S₂]导电层的层状氧硫化合物是颇具潜力的p型透明导体候选材料.     

有机-无机透明导电薄膜的研究进展

透明导电膜是一种重要的光电材料,应用广泛.以传统的无机氧化物和导电高分子材料制备的导电薄膜虽然电学性能优良,但综合性能不甚理想.通过有机-无机杂化的透明导电薄膜能够借助各组成材料特性的互补作用使复合材料具有出色的综合性能.介绍了透明导电薄膜的种类、用途和特性,综述了有机-无机杂化导电材料在块体材料和透明导电薄膜方面的应用,并展望了其发展前景.     

透明导电薄膜材料的研究与发展趋势

本文简述了透明导电薄膜材料的发展现况和趋势,特别是对目前研究比较活跃的透明导电氧化物(TCO)及金属基复合多层透明导电膜的研究动态.材料设计原理及其应用进行了重点介绍,并就透明导电薄膜材料目前存在的问题及发展方向进行了分析讨论.     

透明导电薄膜材料的研发态势

简述了透明导电薄膜材料的研究现状与发展趋势，特别是对目前研究比较活跃的透明导电氧化物(TCO)及金属基复合多层透明导电膜的研究动态，材料设计原理及其应用进行了重点介绍，并就透明导电薄膜材料目前存在的问题及发展方向进行了分析讨论。     

聚合物基透明导电膜的进展

与玻璃基透明导电膜相比，聚合物基透明导电膜耐折，耐摩擦，成本也较低，可广泛使用。本文概述了聚合物基透明导电膜的种类，特点，制备，及其在一些领域的应用。     

低方阻、高透光度复合透明导电膜的研制

摘要:针对低方阻、高透光度透明导电膜的要求,利用薄膜光学干涉原理,设计了ITO+Si02复合型的透明导电膜;研究了基底温度、沉积速率、充氧量等工艺参数对ITO膜的影响;利用优化的工艺参数成功制备了复合透明导电膜.测试结果表明,膜层性能优异,能够满足使用要求.     

Flexible and transparent electrothermal film heaters based on graphene materials

High-performance and novel graphene-based electrothermal films are fabricated through a simple yet versatile solution process. Their electrothermal performances are studied in terms of applied voltage, heating rate, and input power density. The electrothermal films annealed at high temperature show high transmittance and display good heating performance. For example, the graphene-based film annealed at 800 °C, which shows transmittance of over 80% at 550 nm, can reach a saturated temperature of up to 42 °C when 60 V is applied for 2 min. Graphene-based films annealed at 900 and 1000 °C can exhibit high steady-state temperatures of 150 and 206 °C under an applied voltage of 60 V with a maximum heating rate of over 7 °C s(-1) . For flexible heating films patterned on polyimide, a steady-state temperature of 72 °C could be reached in less than 10 s with a maximum heating rate exceeding 16 °C s(-1) at 60 V. These excellent results, combined with the high chemical stability and mechanical flexibility of graphene, indicate that graphene-based electrothermal elements hold great promise for many practical applications, such as defrosting and antifogging devices.     

Polarization and incidence angle-dependent transmittance of transparent nickel electrodes with various thicknesses

The polarization and incidence angle-dependent transmittance of thin nickel film with various thicknesses deposited on glass substrates was first investigated by using a modified UV-Vis spectrometer. The thin nickel films showed relatively high uniform transmittance over a wide range of wavelengths, 300-1100 nm. The thickness-dependent dielectric and optical constants extracted from the experimental transmittance are significantly distinct from those of the thick nickel film. In particular, the p-polarized light transmittance largely increases with larger incidence angle, but the s-polarized light transmittance behavior is opposite from that of p-polarized light. The difference of the polarization-dependent transmittance increases parabolically with the incidence angle.     

太阳电池用绒面ZnO-TCO薄膜制备技术及特性的研究进展

概括阐述了薄膜太阳电池用绒面结构ZnO透明导电薄膜(ZnO-TCO)方面的最新研究进展.绒面结构ZnO-TCO薄膜可以提高薄膜太阳电池效率和稳定性并降低生产成本.磁控溅射技术和MOCVD(Lp-MOCVD/LPCVD)技术是制备绒面结构ZnO-TCO薄膜(例如"弹坑"状和"类金字塔"状表面)的主流生长技术,而喷雾热分解技术则是正在开发的非真空法低成本工艺路线.论述了2种主流技术生长ZnO-TCO薄膜的发展历程,并重点讨论了近期关于绒面ZnO-TCO薄膜微观结构、电学以及光学等特性与工艺关系的研究结果.进一步降低成本和实现大面积产业化是绒面ZnO-TCD薄膜拓展应用的发展趋势.     

Continuous Fabrication of Meter‐Scale Single‐Wall Carbon Nanotube Films and their Use in Flexible and Transparent Integrated Circuits

Single‐wall carbon nanotubes (SWCNTs), especially in the form of large‐area and high‐quality thin films, are a promising material for use in flexible and transparent electronics. Here, a continuous synthesis, deposition, and transfer technique is reported for the fabrication of meter‐scale SWCNT thin films, which have an excellent optoelectrical performance including a low sheet resistance of 65 Ω/? with a transmittance of 90% at a wavelength of 550 nm. Using these SWCNT thin films, high‐performance all‐CNT thin‐film transistors and integrated circuits are demonstrated, including 101‐stage ring oscillators. The results pave the way for the future development of large‐scale, flexible, and transparent electronics based on CNT thin films.     

透明PLZT电光陶瓷材料的制备及应用研究进展

ＰＬＺＴ电光材料（陶瓷和薄膜）具有很好的秀明性和大的电光效应，可广泛应用于光电子学、集成电学等领域。本文综述了透明ＰＬＺＴ电光陶瓷、薄膜的制备工艺及应用，分析了其研究现状，简单论述了其发展趋势。     

喷雾热分解法制备SnO2透明导电薄膜

利用压缩空气气雾化器,通过喷雾热分解法,以ＳｎＣｌ２．２Ｈ２Ｏ为原料,在载玻片上成功制备了ＳｎＯ２薄膜,在１１０℃到３６５℃间的不同沉积温度下进行镀膜,考察了沉积温度,沉积时间对ＳｎＯ２薄膜制备的影响,结果表明,在３２５℃的沉积温度下,薄膜已晶化,随着温度升高,喷雾时间增加,方块电阻降低３２５℃下的样品在可见光区透射率达８０％以上,近红外区透射率达９０％以上。     

溶胶-凝胶薄膜的制备和应用

概述了溶胶—凝胶薄膜的制备方法和在各个领域的应用。并对溶胶—凝胶薄膜制备的基本原理、制备过程中薄膜质量的影响因素和存在的问题进行了探讨和总结。     

Superconductivity in transparent zinc-doped In2O3 films having low carrier density

Abstract

Thin polycrystalline zinc-doped indium oxide (In₂O₃–ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0x 0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5T 300 K, H6 Tfor 350 nm films annealed in air. Films with 0x0.03 show the superconducting resistive transition. The transition temperature T_c is below 3.3 K and the carrier density n is about 10²⁵–10²⁶ m^?3. The annealed In₂O₃–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field H_c2 (T) for the film with x = 0.01. From the slope of dH_c2 /dT, we obtain the coherence length ξ (0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.     

Preventing Thin Film Dewetting via Graphene Capping

A monolayer 2D capping layer with high Young's modulus is shown to be able to effectively suppress the dewetting of underlying thin films of small organic semiconductor molecule, polymer, and polycrystalline metal, respectively. To verify the universality of this capping layer approach, the dewetting experiments are performed for single‐layer graphene transferred onto polystyrene (PS), semiconducting thienoazacoronene (EH‐TAC), gold, and also MoS₂ on PS. Thermodynamic modeling indicates that the exceptionally high Young's modulus and surface conformity of 2D capping layers such as graphene and MoS₂ substantially suppress surface fluctuations and thus dewetting. As long as the uncovered area is smaller than the fluctuation wavelength of the thin film in a dewetting process via spinodal decomposition, the dewetting should be suppressed. The 2D monolayer‐capping approach opens up exciting new possibilities to enhance the thermal stability and expands the processing parameters for thin film materials without significantly altering their physical properties.     

离子束增强反应磁控溅射AIN膜的组织结构及光学特性

对离子束增强反应磁控溅射低温沉积 AIN 膜层组织形貌、晶体结构、电子结构及其光学特性进行了研究。结果表明膜层组织均匀,晶粒细小,薄膜 AIN 是呈(002)择优取向的密排六方结构。由于Al-N 键的形成,使 Al 的2p 轨道电子结合能发生2.6eV 的化学位移。薄膜在可见光区域有很高的透射率,在紫外区域300nm 处有很强的吸收峰,在红外600—800cm~(-1)处有个吸收带,通过计算得到了 AIN膜的折射率,禁带宽度和晶格振动力学常数。