用于涂层导体的Ag/立方织构Cu复合基带的制备

通过二次冷轧铜棒并850℃恒温热处理,制备出具有较强立方织构的Cu基带。以硝酸银、亚硫酸钠和硫代硫酸钠为主要原料配制镀银液,在立方织构Cu基带上制备出具有较强Ag(200)择优取向的银镀层。在600℃恒温热处理30min后Ag膜仍具有(200)择优取向,而830℃热处理后,Ag会扩散到Cu基底中,重复镀银、热处理5次后,Ag膜具有(200)的择优取向并少量面内织构,所得Ag/立方织构Cu复合带材可作为第二代高温超导带材YBCO涂层导体的金属基底。     

用基片曲率法测量薄膜应力

采用基片曲率法设计和制作了一种测量薄膜应力的装置，它具有简单、无损伤、快速、易于操作、精度高的优点。使用该装置测量了射频磁控溅射镀制的Cu单层膜和Ag／Cu多层膜的应力，结果表明薄膜残余应力是均匀的，但随沉积条件不同而不同。Cu单层膜和Ag／Cu多层膜处于压应力状态，外加-200V偏压时，Ag／Cu多层膜则转变为很小的拉应力状态。XRD表明Ag／Cu多层膜已结晶，呈现Ag(111)／Cu(111)择优取向。     

应用于FED Al/Ag/Al导电复合薄膜的研究

利用Ag的高温抗氧化能力,采用磁控溅射沉积Al/Ag/Al导电复合薄膜,并在480℃下进行热处理。扫描电子显微镜（SEM）和能谱分析（EDS）研究表明磁控溅射的Al/Ag/Al导电复合薄膜表面平整,热处理后表面Al膜生成致密的氧化层。溅射沉积和热处理过程中Ag和Al原子的相互扩散,最后形成富Ag的Ag-Al合金和Ag3Al化合物。Al/Ag/Al导电复合薄膜比Ag/Al复合薄膜的电阻率增大了一个数量级,导电复合薄膜热处理后导电性能更优,电阻率约为19.4×10-6Ω.cm。     

不同掺Ag含量下高温(800℃)沉积CrN/Ag涂层的组织结构及其性能

为研究高温下掺入Ag的CrN涂层的组织性能,在沉积温度为800℃的条件下采用直流反应磁控溅射技术制备CrN/Ag硬质涂层。采用扫描电镜(SEM)、EDS能谱仪、X射线衍射(XRD)和维氏硬度计,综合分析了800℃沉积温度下,对不同Ag掺杂情况下CrN/Ag涂层的组织结构和性能特点,以及700℃热处理工艺对其的影响。结果表明,Ag添加导致CrN晶相生长由(200)择优取向向无择优取向转变,并使得CrN/Ag涂层表面粗糙化;少量Ag(7%(原子分数))添加可提高涂层硬度,过多Ag(21%(原子分数))添加明显降低涂层硬度;高温热处理(700℃/1h)后,纯CrN涂层的氧化并不明显,但是,随Ag含量增加,涂层氧化程度逐渐增加,且在高Ag(21%(原子分数))涂层中Ag溢出现象显著;涂层氧化及Ag溢出导致涂层硬度显著降低。     

溅射功率对射频磁控反应溅射制备的Ag2O薄膜微结构的影响

利用射频磁控溅射技术,通过调节溅射功率(P)在200℃、氧氩比为2∶3条件下在玻璃衬底上制备了一系列氧化银(Ag2O)薄膜。利用X射线衍射谱和扫描电子显微镜重点研究了P对Ag2O薄膜微结构的影响。研究结果表明Ag2O薄膜具有(111)择优取向,这可能归结于(111)面的表面自由能最低。随着P从120 W增大到240 W,Ag2O薄膜(111)方向的平均晶粒尺寸从22.92 nm增大到27.96 nm,薄膜的表面结构呈现了从均匀、致密的表面结构向疏松、多孔洞的表面结构的演变。Ag2O(111)衍射峰的2θ角与标准值偏差(2θshift)随P的增大先减小后增大,(111)衍射峰峰位向2θ增大的方向发生了明显的移动。根据量子尺寸效应,薄膜的应力与晶粒尺寸呈反比关系,因此薄膜的应力随P的增大先减小后增大。P=240 W时薄膜的应力最小。从应力的角度,这基本可以合理解释P=210 W时制备的Ag2O薄膜的结晶质量最好,尽管与实验结果有些差异。     

直流反应磁控溅射法制备氮化钛薄膜

研究了采用直流反应磁控溅射法制备TiN薄膜的工艺条件。研究发现：在保持其它工艺参数不变的条件下,溅射的TiN薄膜在不同温度区域存在的物相不同,薄膜的主要成分是多晶立方相TiN,240℃附近是薄膜择优取向由（111）向（200）转变的临界点。随着基底温度升高,薄膜表面粗糙度先变小后变大,沉积最佳基底温度值是330℃,该温度下薄膜的粗糙度最小,膜层致密均匀,没有大尺寸缺陷且光洁度好。     

衬底温度对射频磁控溅射制备HfO2薄膜结构的影响

采用射频磁控溅射法在氧氩比为0.2的混合气氛中,分别在室温、100℃、200℃、250℃、300℃、350℃和400℃温度下,在P-Si(100)衬底上制备了HfO2薄膜,并用SEM、XRD和AFM研究了衬底温度与薄膜沉积速率对微结构的影响.结果表明:随着衬底温度的增加,薄膜沉积速率呈减小趋势.室温沉积的HfO2薄膜为非晶态,当衬底温度高于100℃,薄膜出现单斜晶相,随着衬底温度继续增加,(111)择优取向更加明显,晶粒尺寸增大,薄膜表面粗糙度减小.     

氧化银薄膜的微结构对其反射率和透射率的影响

保持150℃的衬底温度不变,通过调节氧氩比(OFR=[O2]/[Ar]),利用直流反应磁控溅射技术在玻璃衬底上制备了一系列氧化银薄膜。利用X射线衍射谱、扫描电子显微镜和分光光度计重点研究了薄膜的微结构对其反射率和透射率的影响。研究表明随着OFR的升高,氧化银薄膜呈现了从Ag+Ag2O多晶结构到Ag2O多晶结构的演变。薄膜的表面相应地呈现了从疏松的多孔结构到类金字塔结构的演变。较高的Ag2O含量和致密的表面形貌有利于薄膜可见和红外区的透光性,而较高的银含量和疏松的多孔结构则造成对光的强烈吸收,急剧地降低了薄膜的透射率和反射率。特别是在OFR为0.5条件下成功制备了具有(111)择优取向的Ag2O多晶薄膜,有效地将氧化银热分解的临界温度降低到200℃左右。     

基片温度对反应射频磁控溅射法制备掺杂CeO2电解质薄膜的影响

利用Gd/Ce镶嵌复合靶、采用反应射频磁控溅射技术制备了Gd2O3掺杂CeO2(GDC)氧离子导体电解质薄膜,重点探讨了基片温度对薄膜物相结构、沉积速率及生长形貌的影响.分析结果表明,不同温度下制备的薄膜中,立方面心结构GDC固溶体相占主导,同时存在少量体心立方结构Gd2O3中间相;GDC薄膜的生长取向随基片温度而变化,200℃时,无择优取向,500℃时薄膜呈现(220)织构,700℃则为(111)择优取向;薄膜沉积速率随基片温度呈阶段性规律变化,(220)方向择优生长越显著,沉积速率越高,薄膜粗糙度越大;AFM分析表明,薄膜为岛状生长,随温度升高,表面生长岛尺寸增大,岛密度变小.     

硫化温度对CuInS2薄膜微结构和光学性能的影响

采用磁控溅射法在玻璃衬底上沉积Cu-In合金预置膜,采用固态硫源在N2气氛下硫化热处理的方法制备了CuInS2薄膜。研究了硫化温度对CuInS2薄膜的晶相结构、表面形貌和光学带隙等性能的影响。采用X射线衍射(XRD)、场发射扫描电镜(FE-SEM)、紫外-可见光谱(UV-Vis)等测试手段对薄膜的晶相结构、表面形貌、光学性能进行了表征。结果表明,Cu-In合金预置膜经550℃硫化热处理20min可制备出黄铜矿结构的CuInS2薄膜,并具有(112)面的择优取向,所制备的CuInS2薄膜晶粒粒径约为1μm,光学带隙为1.51eV。     

GZO/Ag/GZO多层薄膜制备、结构与光电特性的研究

采用射频磁控溅射和离子束溅射联合设备在玻璃衬底上制备出了具有良好附着性、低电阻率和高透过率的GZO/Ag/GZO(ZnO掺杂Ga_2O_3简称GZO)多层薄膜.X射线衍射谱表明GZO/Ag/GZO多层薄膜是多晶膜,GZO层具有ZnO的六角纤锌矿结构,最佳取向为(002)方向;Ag层是立方结构,具有(111)取向.在GZO层厚度一定的情况下,研究了Ag层厚度的变化对多层膜结构以及光电特性的影响.研究发现,当Ag层厚度为10nm时,3层膜的电阻率为9×10~(-5)Ω·cm,在可见光范围内平均透过率达到89.7%,薄膜对应的品质因子数值为3.4×10~(-2)Ω~(-1).     

Ag层厚度对AZO/Ag/AZO透明导电薄膜性能的影响

在室温条件下,采用磁控溅射技术在玻璃衬底上生长了AZO/Ag/AZO多层透明导电薄膜。主要研究了Ag层厚度对多层透明导电薄膜结构和性能的影响。研究表明,AZO和Ag分别延(002)面和(111)面高度择优生长,随着Ag层厚度的增加,多层透明导电薄膜的电阻率不断降低,透过率呈现先降低再增加最后再降低的变化趋势,其中Ag层厚度为8nm的样品获得最大品质因子33.1×10^-3Ω^-1,综合性能最佳。     

Reactive DC Magnetron Sputtering Deposition of Copper Nitride Thin Film

Copper nitride thin film was deposited on glass substrates by reactive DC （direct current） magnetron sputtering at a 0.5 Pa N2 partial pressure and different substrate temperatures. The as-prepared film, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted film.The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were （111） and （200） at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu （111） peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality （111） Cu3N films. The deposition rate of Cu3N films estimated to be in range of 18-30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.     

Effect of crystallographic orientations on electrical properties of sputter-deposited nickel oxide thin films

Nickel oxide thin films of various preferred orientations were deposited by radio-frequency (RF) magnetron sputtering process in different gas ratios of oxygen atmosphere at RF power 200 W on unheated and heated for (673 K) substrates. The relationships among substrate temperature, preferred orientation and electrical properties of the NiO films were investigated. The resulting films were analyzed by grazing-incidence X-ray diffraction, high-resolution transmission electron microscopy (HR-TEM), and ultrahigh resolution scanning electron microscopy (HR-SEM). The electrical properties were measured using four probe and Hall effects measurements. The results show that films deposited at room temperature with the ratio of oxygen varying from 0 to 100% develop a (111) preferred orientation. At temperature of 673 K, while the (111)-orientated film was obtained under a low ratio of oxygen (<50% O₂), a (200) preferred orientation was developed under 100% oxygen. The lowest sheet resistance 0.01 MΩ/□, resistivity 0.83 Ω-cm and higher carrier density 7.35 × 10¹⁸ cm⁻³ could be obtained on (111) preferred orientation samples prepared on unheated substrates in pure oxygen atmosphere. The relationship between preferred orientation and electrical properties was proposed in this paper.     

Effect of substrate temperature and annealing treatment on the electrical and optical properties of silver-based multilayer coating electrodes

Multilayer coatings consisting of thin silver layers sandwiched between layers of transparent conducting metal oxides are investigated from the view point of low-resistance electrodes for use in flat panel displays, solar cells, etc. ZnO/Ag/ZnO multilayer films were prepared on glass substrates by simultaneous RF magnetron sputtering of ZnO and dc magnetron sputtering of Ag. Optimization of the deposition conditions of both ZnO layers and metallic layers were performed for better electrical and optical properties. The structural, electrical and optical properties of the films (deposited at room temperature, different substrate temperature and annealed at different conditions) were characterized with various techniques. We could not produce high-quality transparent conductive electrodes simply by annealing at various temperatures. However, improved electrical properties and a considerable shift in the transmittance curves was observed after heat treatment. The experimental results show that the electrical resistivity of as-grown films can be decreased to 10^− 5 Ω cm level with post-annealing at 400 °C for 2 h in vacuum atmosphere. After heat treatment, the sheet resistance was reduced as much as 20% which was due to the increased grain size of Ag film. The samples heat treated at 200-400 °C under vacuum or nitrogen atmosphere showed the best electrical properties. The key to the superior electrical and optical properties of the multilayer is the optimization of growth conditions of the silver layer by careful control of the oxide properties and the use of appropriate annealing temperature and atmosphere.     

基底温度对直流磁控溅射制备氮化铜薄膜的影响研究

采用反应直流磁控溅射镀膜法,在氮气分压为0.9Pa、不同基底温度下、玻璃基底上制备了纳米多晶Cu3N薄膜,并研究了基底温度对薄膜结构和性能的影响。结果表明,当基底温度为100℃及以下时,薄膜以[111]方向择优生长为主;在150℃及200℃时,薄膜以[100]方向择优生长为主;250℃时开始出现Cu的[111]方向生长,300℃时已完全不能形成Cu3N晶体,只有明显的Cu晶体。随基底温度的升高,薄膜的沉积速率在13～28nm/min呈U型变化,低温和高温时较高,150℃时最低;薄膜的电阻率显著降低;薄膜的显微硬度先升后降,100℃时显微硬度最大。     

尺寸效应对TiC/α-C∶H涂层织构行为的影响

利用磁控溅射法制备了TiC/α-C∶H纳米复合涂层尺寸效应,并对涂层择优取向的影响进行了研究。通过改变涂层中的C含量来调节晶粒尺寸,发现晶粒尺寸对晶粒的择优取向有着重要影响。随着晶粒尺寸减小,TiC的择优取向从面心立方(111)向(200)转变。这种择优取向的尺寸依赖效应可以用热力学来解释。通过计算与尺寸相关的吉布斯自由能解释了尺寸效应与涂层择优取向的关系。