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1.
陈浩  彭同江  孙红娟 《材料导报》2016,30(23):140-145
以改进Hummers法获得的氧化石墨为原料制备氧化石墨烯,采用旋涂法通过使用不同浓度的氧化石墨烯水相分散液制备不同厚度的氧化石墨烯薄膜湿敏元件。采用X射线衍射仪(XRD)、红外光谱仪(FT-IR)、扫描电子显微镜(SEM)、扫描探针显微镜(SPM)和湿度测试仪对氧化石墨烯薄膜的结构、形貌和湿敏性能进行分析。结果表明,在室温下随氧化石墨烯薄膜厚度减小(139nm、102nm、65nm、35nm和18nm),湿敏元件响应时间由10s缩短至2s,恢复时间由37s缩短至8s;在11.3%~93.6%RH范围内,湿敏元件电阻随湿度增加而显著减小,从兆欧级减小至千欧级,变化达到3个数量级;湿敏元件的最佳响应时间为2s,恢复时间为8s,最高灵敏度可达96.06%,具有较好的湿敏性能。  相似文献   

2.
以改进Hummers法获得的氧化石墨为原料制备氧化石墨烯,采用一步水热合成法制备了还原氧化石墨烯(rGO)-聚苯胺(PANI)复合材料。采用X射线衍射仪(XRD)、红外光谱仪(FT-IR)、扫描电子显微镜(SEM)和气敏测试仪对rGO-PANI复合薄膜的结构、形貌和氨气敏感性能进行分析。结果表明,rGO-PANI复合材料比单纯的rGO、PANI的气敏性能更加优异;随着PANI与rGO质量比的增加,灵敏度呈现减小趋势,而响应-恢复时间呈现增大的趋势。在室温下,当聚苯胺与氧化石墨质量比为1:1时复合薄膜氨敏性能最佳,灵敏度50.26%,响应时间156 s,恢复时间214 s。  相似文献   

3.
以乙二醇(C2H6O2)为有机溶剂,采用溶剂热法制备了花状SnO2纳米材料,并将制备的SnO2制成旁热式气敏元件.通过XRD,SEM等测试手段对SnO2纳米材料进行了表征,并初步分析了气敏元件对丙酮的敏感机理.制备的SnO2材料是由粒径约为10 nm的颗粒有规则的堆叠而成的直径约为3~4μm的花瓣清晰的多孔分级花状结构.研究发现,气敏元件对丙酮气体有很好的响应灵敏度.在最佳工作温度(350℃)时,检测的丙酮体积分数最低为1×10-6.对100 ppm丙酮的响应及恢复时间分别为40和50 s.且气敏元件对丙酮气体的响应灵敏度远高于对苯、甲苯、甲醇、甲醛、氨等气体的响应灵敏度.  相似文献   

4.
以碳纳米管为模板,采用溶胶-凝胶法合成了碳纳米管(CNT)/ZnO纳米复合材料,用XRD、TEM、IR和EDS对产物进行了表征,研究了用该材料制成的气敏元件在室温下对NH3的气敏性。结果表明,产物是由ZnO均匀包裹在碳纳米管上构成的一种纳米复合材料,管径约50~60nm。这种复合材料可大大降低元件的阻值,提高元件的灵敏度。当碳纳米管加入量为60%[与Zn(CH3COO)2.2H2O的摩尔比]时,元件灵敏度最大,且灵敏度随NH3浓度的增大而增大,NH2从100ppm(10-6)以后,灵敏度变化平缓。  相似文献   

5.
纳米ZnO气敏元件对H2的测定研究   总被引:1,自引:0,他引:1  
以采用物理热蒸发法制备的纯ZnO纳米线以及Ag掺杂ZnO纳米线为气敏基料制备成旁热式气敏元件,用静态配气法对不同浓度的H2进行气敏性能测试。利用测试结果,绘制元件灵敏度与所测气体浓度的关系曲线,并对此曲线进行了线性拟合。结果表明,Ag掺杂纳米ZnO元件与纯纳米ZnO元件相比会明显提高对H2的灵敏度,两类元件的气敏性能与所测气体浓度呈现相同的变化规律。用拟合方程计算出的气体浓度值与实际检测值间吻合较好,误差小于10%。因此,可以利用这两类元件及其拟合直线对H2气体浓度进行测定。  相似文献   

6.
采用分析纯SnCl4·5H2O和NH3·H2O为主要原料,控制不同Co^2+/Sn^4+摩尔比,利用均匀共沉淀法制备了(Sn1-xCo2x)O2纳米粉体样品,并以白云母为基片利用厚膜工艺制得气敏元件。对样品的结构、结晶性能和活性等分析发现,Co件以类质同像的方式代替了SnO2晶格中的Sn^4+,并引起了M—O键长、晶胞参数和M-O八面体电价平衡的非均一性,进而提高了粉体活性及n型半导体性能。在不同浓度H2中元件气敏性能测试表明,Co^2+的引入提高了Sn02的H2灵敏度。元件的灵敏度与H2浓度之间具有较好的线性关系。实验得到了制备(Sn1-x,Co2x)O2气敏材料的最佳Co^2+/Sn^4+摩尔比。  相似文献   

7.
曹冠龙  潘国峰  何平  齐景爱  刘伟  郑伟艳 《功能材料》2013,44(5):682-684,688
采用sol-gel法制备ZnO及CeO2掺杂量分别为6%、7%和8%(质量分数)的ZnO粉体。通过XRD、SEM对材料的表面形貌和结构进行表征。研究了掺杂量对粉体制备的影响。采用静态配气法对该粉体制成的气敏元件进行测试,结果表明,在工作温度仅为85℃的条件下,7%(质量分数)CeO2-ZnO气敏传感器对饱和丙酮蒸汽的灵敏度最高达9634,响应时间为3s,恢复时间为2s;在较低浓度2.0×10-4时灵敏度也可达30左右。并对丙酮气敏传感器的气敏机理进行了进一步探讨。  相似文献   

8.
采用Hummers法制备氧化石墨烯(GO),利用水热法对GO分别还原5 h和10 h制得两种还原氧化石墨烯(5-RGO和10-RGO),进一步用异氰酸苯酯对还原前后的氧化石墨烯材料进行改性,即得功能化氧化石墨烯和功能化还原氧化石墨烯(SPFGO、5-SPFRGO和10-SPFRGO)。以功能化还原氧化石墨烯材料为电子受体,聚3-己基噻吩(P3HT)为电子给体,制备复合膜。结果表明:GO由3-5层组成,经水热还原后样品表面仍含有—CO,—COOH等含氧官能团;功能化后石墨烯在邻二氯苯中分散性良好,与P3HT能级相匹配,满足作为聚合物太阳能电池受体材料要求;以5-SPFRGO做为受体材料与P3HT复合制备的复合膜表面规整致密,光吸收强度高,荧光光谱强度低,性能最优。  相似文献   

9.
以氧化石墨为前驱体,采用真空辅助热膨胀法在低温下即获得功能化石墨烯片。将所得石墨烯在不同温度下热处理,制备了表面化学结构不同的石墨烯片,并用透射电子显微镜、X射线衍射、X射线光电子能谱、傅里叶变换红外光谱等方法对样品进行分析表征。结果表明,还原氧化石墨烯片中含氧官能团的种类和数量均随热还原温度的升高而减小。  相似文献   

10.
采用分析纯SnCl4·5H2O和NH3·H2O为主要原料,控制不同Co2 /Sn4 摩尔比,利用均匀共沉淀法制备了(Sn1-x,Co2x)O2纳米粉体样品,并以白云母为基片利用厚膜工艺制得气敏元件.对样品的结构、结晶性能和活性等分析发现,Co2 以类质同像的方式代替了SnO2晶格中的Sn4 ,并引起了M-O键长、晶胞参数和M-O八面体电价平衡的非均一性,进而提高了粉体活性及n型半导体性能.在不同浓度H2中元件气敏性能测试表明,Co2 的引入提高了SnO2的H2灵敏度.元件的灵敏度与H2浓度之间具有较好的线性关系.实验得到了制备(Sn1-x,Co2x)O2气敏材料的最佳Co2 /Sn4 摩尔比.  相似文献   

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12.
本文介绍了检定和校准以及证书的两点相同、五点不同之处,说明了对检定证书和校准证书的正确应用。  相似文献   

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14.
We have synthesized a variety of alkali-metal and ammonium fluorosulfatometallates (titanates, zirconates, and hafnates). The alkali fluorosulfatozirconates and fluorosulfatohafnates have been shown to exhibit efficient roentgenoluminescence (RL) in the UV through visible spectral region, with a maximum at 390–440 nm. Their RL spectra depend significantly on their composition (cation, anion, and water content), coordination of KF and K2SO4, and relative amounts of fluorine and SO4 groups. We have examined the effect of heat treatment on the RL of these compounds. The rubidium and cesium fluorosulfatozirconates Rb3Zr2F9SO4 · 2H2O, Cs2ZrF2(SO4)2 · 2H2O, Cs8Zr4F2(SO4)11 · 16H2O, and Cs2ZrF4SO4 offer the most efficient RL.  相似文献   

15.
The behavior of wall-bound drops and bubbles is fundamental to many natural and industrial processes. Key characteristics of such capillary systems include interface shape and stability for a variety of gravity levels and orientations. Significant solutions are in hand for axisymmetric pendent drops for a variety of uniform boundary conditions along the contact line with gravity acting normal to a planar wall. The special case of a wall-bound drop or bubble that is also pinned at an edge (i.e. a ‘wall-edge-bound’ drop) is considered here where numerical solutions are obtained for interface shape and stability as functions of drop volume, contact angle, fluid properties, and uniform gravity vector. For a semi-infinite zero-thickness planar wall (plate), a critical contact angle is identified below which wall-edge-bound drops are always stable. The critical contact angle is computed as a function of the gravity vector. The numerical procedure, which makes no account for contact angle hysteresis, predicts that such wall-edge-bound drops are unconditionally unstable for any gravity field with a component that is tangent to the wall while inwardly normal to the edge. Select experiments are conducted that support the conclusions drawn from the numerical results.  相似文献   

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17.
凝固科学技术与材料   总被引:8,自引:0,他引:8  
从凝固科学与实践发展的角度介绍了当前凝固材料体系的基本框架和凝固科学主要发展阶段的基本理论。作为材料科学与工程的基本组成,凝固科学技术正在现代科学理论的基础上针对传统材料的改性提高和新材料的发展需求,以控形、控构、控性为目标开展优质铸件的定向、晶体生长、快凝、深过冷及各种新型和超常领域凝固过程的研究,并介绍了其中某些方面和展望了可能的发展趋势。  相似文献   

18.
Basic definitions and concepts of the physicomathematical theory of natural catastrophes are given. Possibilities of mathematical modeling of natural and technogenic catastrophes are discussed in the context of the theory of heat and mass transfer and the mechanics of reacting media. The importance of taking into account conjugate heat and mass exchange in modeling catastrophes is emphasized. A formula for evaluating the probability of a collisional catastrophe is given.  相似文献   

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20.
The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.  相似文献   

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