射频电缆的幅相稳定性测试研究

对射频电缆幅相稳定性进行了介绍,阐述了射频测试电缆相位和幅度变化的因素,并详细分析了射频电缆相位性能以及幅度性能的不同测试方法,最后通过实测数据的展示,总结说明了在日常测试中该如何正确使用测试电缆。     

仪器仪表产品脉冲耐压试验要求和保护器件的选择

仪器仪表产品的脉冲耐压试验是产品型式试验、例行试验中的基本内容。通过对GB4793.1标准的整理,归纳了仪器仪表产品的脉冲耐压试验要求。通过对试验方法和设备特性的梳理,总结了特性参数,并介绍了应对脉冲耐压试验可采取的保护器件的类别及选用方法。     

基于关键路径延时检测的自适应电压缩减技术

为了减小传统的最差情况设计方法引入的电压裕量,提出了一种变化可知的自适应电压缩减(AVS)技术,通过调整电源电压来降低电路功耗.自适应电压缩减技术基于检测关键路径的延时变化,基于此设计了一款预错误原位延时检测电路,可以检测关键路径延时并输出预错误信号,进而控制单元可根据反馈回的预错误信号的个数调整系统电压.本芯片采用SMIC180 nm工艺设计验证,仿真分析表明,采用自适应电压缩减技术后,4个目标验证电路分别节省功耗12.4％,11.3％,10.4％和11.6％.     

Design and performance study of phase‐locked loop using fractional‐order loop filter

The present work reports the realization of an analog fractional‐order phase‐locked loop (FPLL) using a fractional capacitor. The expressions for bandwidth, capture range, and lock range of the FPLL have been derived analytically and then compared with the experimental observations using LM565 IC. It has been observed that bandwidth and capture range can be extended by using FPLL. It has also been found that FPLL can provide faster response and lower phase error at the time of switching compared to its integer‐order counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Three-phase four-wire shunt active power filter based on the SOGI filter and Lyapunov function for DC bus control

The three-phase four-wire shunt active power filter (SAPF) was developed to suppress the harmonic currents generated by nonlinear loads, and for the compensation of unbalanced nonlinear load currents, reactive power, and the harmonic neutral current. In this work, we consider instantaneous reactive power theory (PQ theory) for reference current identification based on the following two algorithms: the classic low-pass filter (LPF) and the second-order generalized integrator (SOGI) filter. Furthermore, since an important process in SAPF control is the regulation of the DC bus voltage at the capacitor, a new controller based on the Lyapunov function is also proposed. A complete simulation of the resultant active filtering system confirms its validity, which uses the SOGI filter to extract the reference currents from the distorted line currents, compared with the traditional PQ theory based on LPF. In addition, the simulation performed also demonstrates the superiority of the proposed approach, for DC bus voltage control based on the Lyapunov function, compared with the traditional proportional-integral (PI) controller. Both novel approaches contribute towards an improvement in the overall performance of the system, which consists of a small rise and settling time, a very low or nonexistent overshoot, and the minimization of the total harmonic distortion (THD).     

基于三相幅度测量的相控阵天线快速校准方法

提出了一种基于三相幅度测量的相控阵天线快速校准方法。该方法将天线阵列进行分组,利用每种分组在三种配相下的阵面合成场幅度测量值,可解算出各个天线单元的初始幅相值。该方法仅需幅度测量,避免了相位测量误差影响单元幅相值的计算精度,而且所需幅度测量次数仅为(2N+1)次,可显著提高校准时效性。另外,利用分组思想,同时改变多个单元相位,使总辐射场的幅度变化显著,提升校准准确性。仿真结果表明:校准后相位均方根误差为2.2°,幅度均方根误差为0.2 dB。     

Application of differential evolution for cascaded multilevel VSI with harmonics elimination PWM switching

Harmonic elimination pulse width modulation (HEPWM) method has been widely applied to multilevel voltage source inverter (MVSI) to remove low frequency harmonics from its output voltage. However, the computation of the HEPWM switching angles for MVSI is very challenging due to several constraints, namely angle sequencing, very tight angular spacing and the numerous possibilities of angles distribution ratio. Realizing the potential of Differential Evolution (DE) to handle complex problems, this work proposes its application to solve the HEPWM problem for cascaded MVSI. Its emphasis is on improving the availability of HEPWM for higher output voltage by extending the maximum range of modulation index (M). It also removes the discontinuities in the switching angles and reduces the number of distribution ratio required to obtain the required solution. Compared to the most advanced (similar) work, i.e., 7-level MVSI with seventeen switching angles, DE covers a wider range of M; the maximum achievable M is 2.80. Furthermore, it exhibits very low second order distortion factor (DF₂): for the worst case, the value of DF₂ is 0.0014%. To verify the viability of the proposed algorithm, simulation is carried out and hardware prototype is constructed. Both results show very good agreement with the theoretical prediction.     

基于星座图对射频指纹识别方法的研究

针对星座图的射频(RF)指纹识别方案中,低信噪比环境下识别准确率低的问题,提出一种基于欧式距离与幅度距离的二维识别算法来进行RF指纹识别。该方案通过对星座图进行优化处理,可从优化后的星座图中提取识别性能更好的RF指纹,再通过二维识别算法来提高识别准确率。仿真结果表明:与仅用欧式距离作为判断依据的方法相比,所提出的二维识别算法的识别准确率最高可提升8%,在设备容量为50组的情况下识别准确率为77.8%,并且从优化后的星座图中所提取的RF指纹具有更好的唯一性和稳定性。     

GIS气体高压开关在阳煤五矿变电站的应用

针对阳煤五矿广场变电站的高压开关老化问题,为了保证安全性,采用了GIS气体的高压绝缘开关进行了改造。在改造后,变电站的安全性得到了显著提高,设备运行可以节省成本200多万元。