MEMS技术在THz无源器件中的应用

太赫兹技术将在未来高精度频谱探测技术、高分辨率成像和高性能通讯等应用前景良好.太赫兹技术处于电子学与光子学领域的交叉领域,太赫兹器件的尺寸在数十微米到毫米量级,传统的机械加工技术很难达到加工精度要求,甚至无法加工.MEMS技术在太赫兹器件的加工方面具有巨大的优势.总结了目前采用DRIE,LIGA等工艺加工太赫兹器件的研...     

一个新型的大检测电容结构的MEMS惯性传感器研究

A novel MEMS inertial sensor with enhanced sensing capacitors is developed. The designed fabricated process of the sensor is a deep RIE process, which can increase the mass of the seismic to reduce the mechanical noise, and the designed capacitance sensing method is changing the capacitance area, which can reduce the air damping between the sensing capacitor plates and reduce the requirement for the DRIE process precision, and reduce the electronic noise by increasing the sensing voltage to improve the resolution. The design and simulation are also verified by using the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is approximately equal to zero. Finally, the fabricated process based on silicon-glass bonding and the preliminary test results of the device for testing grid capacitors and the novel inertial sensor are presented. The testing quality factor of the testing device based on the slide-film damping effect is 514, which shows that the enhanced capacitors can reduce mechanical noise. The preliminary testing result of the sensitivity is 0.492pf/g.     

A novel MEMS inertial sensor with enhanced sensing capacitors

A novel MEMS inertial sensor with enhanced sensing capacitors is developed. The designed fabricated process of the sensor is a deep RIE process, which can increase the mass of the seismic to reduce the mechanical noise, and the designed capacitance sensing method is changing the capacitance area, which can reduce the air damping between the sensing capacitor plates and reduce the requirement for the DRIE process precision, and reduce the electronic noise by increasing the sensing voltage to improve the resolution. The design and simulation are also verified by using the FEM tool ANSYS. The simulated results show that the transverse sensitivity of the sensor is approximately equal to zero. Finally, the fabricated process based on silicon-glass bonding and the preliminary test results of the device for testing grid capacitors and the novel inertial sensor are presented. The testing quality factor of the testing device based on the slide-film damping effect is 514, which shows that the enhanced capacitors can reduce mechanical noise. The preliminary testing result of the sensitivity is 0.492 pf/g.     

Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures

Different processes involving an inductively coupled plasma reactor are presented either for deep reactive ion etching or for isotropic etching of silicon. On one hand, high aspect ratio microstructures with aspect ratio up to 107 were obtained on sub-micron trenches. Application to photonic MEMS is presented. Isotropic etching is also used either alone or in combination with anisotropic etching to realize various 3D shapes.     

微米尺度下键合强度的评价方法和测试结构

在MEMS器件的设计与加工过程中，键合技术是体硅工艺的一项关键技术。由于MEMS器件的特点，其键合的面积通常是在微米到毫米量级内．传统测试键合强度的方法不再适用，该尺度下键合强度的测试与评价成为MEMS工艺测试的难点之一。文章提出了一种新型的测试结构．对面积为微米量级下键合的最大抗扭强度进行了测试。实验设计一系列的单晶硅悬臂梁结构测试键合面积在微米量级时的最大剪切力．键合面为常用的正方形．其边长从6μm到120μm，计算得出的剪力与采用实体单元有限元分析结果计算出的作用力相对误差为4．9％，这一误差在工程中是可以接受的。实验得出最大剪切扭矩和相应的键合面积的曲线。MEMS器件的设计人员可以根据结论曲线．针对所需的抗扭强度设计相应的键合面积。     

基于切割成型的侧壁表面压阻制作及其参数优化

为了提高MEMS执行器件对面内运动位移（或力学信号）检测的灵敏度并改善侧壁检测电阻制作工艺与其他工艺及其不同器件结构之间的兼容性问题,提出一种基于离子注入工艺和深度反应离子刻蚀（DRIE）工艺相结合制作检测梁侧壁压阻的方法。在此基础上,详细分析了影响位移检测灵敏度和分辨率的各种因素,并对侧壁压阻的结构尺寸及其工艺参数进行优化。最后,给出了侧壁表面压阻在几种不同类型典型MEMS执行器件中的应用,取得了很好的应用效果。     

国外高深宽比微细结构制造技术的发展

介绍了国外近年来高深宽比微细结构制造技术的最新发展,其中包括LIGA、准LIGA、深层反应离子刻蚀等主要高深宽比微细结构技术的具体研究现状和研究进展,还介绍了电化学沉积加工、质子束光刻、准LIGA与Si等离子刻蚀复合加工、局部电化学沉积、立体光固化微加工、微细电解加工等一些新发展的高深宽比微细结构技术。     

一种高灵敏度硅微机械陀螺的设计与制造

设计与制造了一种高灵敏度的硅微机械陀螺。陀螺用静电来驱动,用连接成惠斯顿电桥的压阻式力敏电阻应变计来检测。主梁、微梁 质量块结构实现了高灵敏度。比较硬的主梁提供了一定的机械强度,并且提供了高共振频率。微梁很细,检测时微梁沿轴向直拉直压。力敏电阻应变计就扩散在微梁上,质量块很小的挠动就能在微梁上产生很大的应力,输出很大的信号。5V条件下,陀螺检测部分的理论灵敏度达到27.45mV/gn。压阻式四端器件用来监测驱动振幅,可以反馈补偿压阻的温度系数。检测模态的Q值达260使陀螺能在大气下工作。陀螺利用普通的n型硅片制造,为了刻蚀高深宽比的结构,使用了深反应离子刻蚀(DRIE)工艺。     

一种控制硅深刻蚀损伤方法的研究

提出了提高硅深反应离子刻蚀的新方法。该方法在硅的侧壁PECVD淀积SiO2，硅的底部采用热氧化的方法形成SiO2。由于在刻蚀中硅与SiO2的刻蚀选择比为120∶1-125∶1，因此SiO2层可以抑制在硅-玻璃结构的刻蚀中出现的lag和footing效应，扫描电镜结果也证明，采用改进工艺后的硅结构在经过长时间的过刻蚀后仍然保持了完整性。硅陀螺测试结果也证明了改进工艺的正确性。     

PZT铁电薄膜的反应离子刻蚀研究

介绍了一种刻蚀效果良好的PZT铁电薄膜反应离子刻蚀方法.利用深反应离子刻蚀设备研究了反应离子刻蚀中刻蚀气氛、刻蚀功率及刻蚀气体流量等因素对PZT薄膜刻蚀效果的影响.实验结果表明,刻蚀气体采用SF6、刻蚀功率为250 W、SF6/Ar总流量为25 cm3/min(其中SF6:Ar为20:5)时刻蚀效果最优.利用优化后的工艺条件制作出可用于铁电存储器的铁电电容并测试其电学特性,得到了较理想的电滞回线和漏电流.