W波段InGaAs/InP动态二分频器

采用fT=214 GHz,fmax=193 GHz的InGaAs/InP异质结双极型晶体管工艺,设计了一款基于时钟驱动型反相器的动态二分频器.该分频器工作频段为60 ～ 100 GHz,但由于测试系统上限频率的限制,只能测出62 ～ 83 GHz的工作范围.在-4.2V和-5.2 V的单电源直流偏置下该分频器的功耗分别为596.4 mW、1060.8 mW.此分频器的成功制作对于工作在W波段锁相环的构建有较大的意义.     

一种改进了碰撞电离的超高速InP基SHBT SDD模型

从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型.同时针对自有工艺和器件特性,采用SDD(symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型.模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性.     

InGaP/GaAs HBT X波段混合集成功率合成放大器的研制

研制了面向X波段应用的InGaP/GaAs HBT混合集成功率合成放大器模块.电路采用一种新颖的具有片上RC稳定网络的InGaP/GaAs HBT功率管作为功率合成单元以提高电路的稳定性,并采用紧凑的微带线并联匹配网络进行功率分配和合成.在8.1GHz,偏置为Vcc=7V,Ic=230mA的AB类工作条件下,连续波最大输出功率为28.9dBm,功率合成效率达到80%.     

基于GaAs HBT工艺的高增益宽带Doherty功率放大器设计

在传统Doherty功率放大器的基础上,采用砷化镓(GaAs)异质结双极晶体管(HBT)工艺,设计了一款可应用于5G通信N79频段(4.4~5 GHz)的高回退效率MMIC Doherty功率放大器(DPA)。通过在Doherty电路中采用共射-共基结构,并在共射-共基结构中加入共基极接地电容,大幅提升了DPA的增益和输出功率。使用集总元件参与匹配,减小了芯片的面积。仿真结果表明,在目标频段内,增益大于28 dB,饱和输出功率约为38 dBm,饱和附加效率(PAE)为63%,7 dB回退处的效率达到43%。     

A 6 GHz high power and low phase noise VCO using an InGaP/GaAs HBT

A 6 GHz voltage controlled oscillator (VCO) optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance (Neg-R) method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of -122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.     

InGaP/GaAs HBT单管6GHz 大功率低噪声压控振荡器

A 6 GHz voltage controlled oscillator （VCO） optimized for power and noise performance was designed and characterized. This VCO was designed with the negative-resistance （Neg-R） method, utilizing an InGaP/GaAs hetero-junction bipolar transistor in the negative-resistance block. A proper output matching network and a high Q stripe line resonator were used to enhance output power and depress phase noise. Measured central frequency of the VCO was 6.008 GHz. The tuning range was more than 200 MHz. At the central frequency, an output power of 9.8 dBm and phase noise of-122.33 dBc/Hz at 1 MHz offset were achieved, the calculated RF to DC efficiency was about 14%, and the figure of merit was -179.2 dBc/Hz.     

An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based HEMT with f_(max) of 201 GHz

正An 88 nm gate-length In_(0.53)Ga_(0.47)As/In_(0.52)Al_(0.48)As InP-based high electron mobility transistor (HEMT) was successfully fabricated with a gate width of 2×50μm and source-drain space of 2.4μm.The T-gate was defined by electron beam lithography in a trilayer of PMMA/A1/UⅧ.The exposure dose and the development time were optimized,and followed by an appropriate residual resist removal process.These devices also demonstrated excellent DC and RF characteristics:the extrinsic maximum transconductance,the full channel current, the threshold voltage,the current gain cutoff frequency and the maximum oscillation frequency of the HEMTs were 765 mS/mm,591 mA/mm,-0.5 V,150 GHz and 201 GHz,respectively.The HEMTs are promising for use in millimeter-wave integrated circuits.     

具有在片稳定网络的GaAs HBT微波功率管

采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器.     

GaAs MMIC用无源元件的模型

制作了不同结构参数的GaAs MMIC无源元件,包括矩形螺旋电感、MIM电容和薄膜电阻,建立了无源元件的等效电路模型库,采用多项式公式表征无源元件的模型参数和性能参数,便于电路设计的应用.并提取得到MIM电容的单位面积电容值,约为195pF/mm2,NiCr薄膜电阻的方块电阻约为16.1Ω/□.分析结构参数对螺旋电感性能的影响可知,减小线圈面积相关的寄生损耗有助于获得高品质的电感.     

C波段3.5W/mm,PAE＞40%的InGaP/GaAs HBT功率管

通过优化InGaP/GaAs异质结双极晶体管(HBT)的材料结构和器件结构,采用BE金属自对准、发射极镇流和电镀空气桥等工艺技术,研制了C波段InGaP/GaAs HBT功率管.其击穿电压BVCBO大于31V,BVCEO大于21V;在5.4GHz时连续波(CW)饱和输出功率达到1.4W,功率密度达到3.5W/mm,功率附加效率(PAE)大于40%.