国有末期矿山发展方向的初步探讨

目前,国有末期矿山普遍存在着体制滞后、机制不活、管理松散、资源枯竭、负担过多、包袱沉重、内部冗员、资金紧张、负债经营等问题。这些问题的存在,直接造成了国有末期矿山亏损额居高不下,连年递增,生产生活难以为继,拖欠职工工资等一     

W波段InGaAs/InP动态二分频器

采用fT=214 GHz,fmax=193 GHz的InGaAs/InP异质结双极型晶体管工艺,设计了一款基于时钟驱动型反相器的动态二分频器.该分频器工作频段为60 ～ 100 GHz,但由于测试系统上限频率的限制,只能测出62 ～ 83 GHz的工作范围.在-4.2V和-5.2 V的单电源直流偏置下该分频器的功耗分别为596.4 mW、1060.8 mW.此分频器的成功制作对于工作在W波段锁相环的构建有较大的意义.     

功率为16.9 dBm增益大于20 dB的InP DHBT W波段功率放大器

A two-stage MMIC power amplifier has been realized by use of a l-μm InP double heterojunction bipolar transistor(DHBT).The cascode structure,low-loss matching networks,and low-parasite cell units enhance the power gain.The optimum load impedance is determined from load-pull simulation.A coplanar waveguide transmission line is adopted for its ease of fabrication.The chip size is 1.5×1.7 mm~2 with the emitter area of 16×1μm×15μm in the output stage.Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB.The high power gain makes it very suitable for medium power amplification.     

低相噪全相参毫米波频率合成源研究

研制出一种小步进全相参毫米波频率合成源.本振部分,对直接数字式合成频率、参考分频比和环路分频比进行三重调节,抑制了直接数字频率合成的杂散,提高了频率分辨率;发射部分,采用二次混频电路,避免了调谐电压预置,简化了电路,并保证了发射信号和本振信号相参.该系统输出在Ka频段,带宽400MHz,步进<1MHz.测试相噪<-90dBc/Hz@10kHz、-97dBc/Hz@100kHz,杂散为-60dBc,跳频时间<15us.     

A full W-band low noise amplifier module for millimeter-wave applications

A full W-band Low Noise Amplifier (LNA) Module is designed and fabricated in this letter. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz , has a small signal gain above 21 dB. The noise figure is lower than 5dB throughout the entire W-band (below 3 dB from 89 to 95GHz) at a room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low dc power consumption     

（英）W波段InP HBT 宽带高功率压控振荡器

本文介绍了一款具有较高输出功率和宽调谐频率范围的基波压控振荡器单片集成电路。其制作工艺为f_T =170GHz,f_max =250GHz的0.8um InP DHBT工艺。电路核心部分采用了平衡式考毕兹振荡器拓扑,并在后面添加了一级缓冲放大器来抑制负载牵引效应,并提升了输出功率。DHBT的反偏CB结作为变容二极管来实现频率调谐。芯片测量结果表明,VCO的频率调谐范围为81- 97.3GHz,相对带宽为18.3 %。在调谐频率范围内最大输出功率为10.5 dBm,输出功率起伏在3.5 dB以内。在该VCO的最大调谐频率97.3 GHz处相位噪声为-88 dBc/Hz @1MHz。在目前所报道的InP HBT基VCO MMIC中,本文在如此宽的频率调谐范围内实现了最高的输出功率。     

回采巷道顶板离层表现形式分类及其控制研究

在回采巷道顶板离层监测的基础上,首次提出了回采巷道在服务期间离层的不同表现形式的分类,并对形成原因进行了分析,针对不同的离层方式提出了相应的控制措施.     

速腾软件在矿井设计中的应用

针对矿井设计的特点开发出了专业的速腾矿图辅助设计系统,详细介绍了速腾软件的特点与在矿图中的应用,以及对矿井设计的辅助设计作用.     

W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55×0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion gain above 4.7 dB over 75-80 GHz.     

W波段增益为25.7 dB两级cascode放大器

AW-bandtwo-stageamplifierMMIChasbeendevelopedusingafullypassivated 2 × 20 μm gate-width and 0.15 μm gate-length InP-based high electron mobility transistor （HEMT） technology. The two-stage amplifier has been realized in combination with a coplanar waveguide technique and cascode topology, thus leading to a compact chip-size of 1.85 × 0.932 mm^2 and an excellent small-signal gain of 25.7 dB at 106 GHz. Additionally, an inter-digital coupling capacitor blocks low-frequency signal, thereby enhancing the stability of the amplifier. The successful design of the two-stage amplifier MMIC indicates that InP HEMT technology has a great potential for W-band applications.