A new tantalum sulfur compound as electrode material for non-aqueous alkali metal batteries

Polycrystalline (PbS)_1.14(TaS₂)₂, a misfit layer sulfide, was used as cathodic material for lithium secondary battery. One molar LiClO₄ in propylene carbonate (PC) was used as electrolyte. The cell could be galvanostatic discharged down to x = 4.6 [Li_x(PbS)_1.14(TaS₂)₂] when the current density was 65 μA cm⁻² and the cell was cycled more than 100 times between 3.5 and 1.5 V at a current density of 260 μA cm⁻². Lattice expansion increased linearly with lithium content and was less than that reported for the Li/TaS₂ system. Chemical diffusion coefficients were determined by a modified version of the galvanostatic intermittent titration technique and they were fairly constant in the composition range 0.2 < x < 1, and an average value of 8.1 × 10⁻¹¹ cm² s⁻¹ was calculated. Sodium intercalation was also accomplished, but the uptake of this ion resulting in a significant lattice expansion compared with that observed for lithium ions. Moreover, a similar dependence of the sodium chemical diffusion coefficient on the composition was observed with an average value of 1.4 × 10⁻¹⁰ cm² s⁻¹, somewhat higher than that of lithium ion. We believe that differences in lattice expansion may be responsible for the differences found in the chemical diffusivity values.     

Very low voltage sputter coating

Very low voltage sputter coating, in the range 175–300 V, has been used to produce finely structured thin films of noble and refractory metals for use in high resolution scanning electron microscopy. There is a marked diminution in the particle size with a decrease in cathode voltage. Although the sputtering times are longer than with conventional diode sputter coating, such times are shorter than those required to produce similar films by Penning or ion-beam sputtering. The refractory metals produce films which are fine grained and suitable for high resolution studies. The method has been used to sputter coat thin layers of aluminium. All attempts at sputtering carbon have failed; the reasons for this are discussed in some detail.     

高技术产品用无源元件与中国钽工业发展

世界高技术产品市场总体看呈增长趋势，预计2020年销售额将比2000年翻一番。以高技术产品为主要应用领域的电阻、电容、电感等无源元件，也将随着高技术产业的发展呈现出良好的市场前景，但是钽电容器市场近几年表现出骤涨急落的发展态势。由于钽电容器产能过剩，且面临着被替代的威协，因此价格将无法返回到2000年以前的水平，并呈现整体持续走低的趋势。中国的钽工业发展应注重提高企业自身的综合竞争力，加强企业间的沟通、交流与合作，维护我国钽工业的整体利益，增强环保意识，做好国外转移到我国的初级产品和低端产品生产的环保工作。     

钽粉颗粒强度的研究

研究了采用激光粒度分布仪测试电容器级团化钽粉粒度分布及强度的方法。其中心内容是:先采用3种不同比表面积、松装密度和费氏平均粒径的钠还原原粉,按3种烧结工艺制得团化钽粉。然后把烧结得到的6种试样加入纯水中,以200～300r/min进行高速搅拌并以40W,42kHz超声波振动。将激光衍射分析仪的激光束穿过经不同搅拌时间的悬浊钽粉,测得不同时间的钽粉粒径分布曲线。分析分布曲线可以获得团化钽粉的一系列信息,包括:①几种团化钽粉颗粒的相对强度;②影响团化钽粉颗粒强度的因素;③钽粉强度和其他性能如介电损耗、流动性,平均粒径及密度的关系等。     

High-temperature oxidation of a rapidly solidified amorphous Ta-Ir alloy

The oxidation products formed at 500 and 700°C on an amorphous Ta-44.5 at% Ir alloy in an Ar-0.1% O₂ gas mixture were characterized using SEM, XRD, EPMA, TEM, STEM, AES, and XPS. Initially, a thin (3–4 nm) layer of Ta₂O₅ formed at the surface of the alloy. Continued growth of the Ta₂O₅, which occurred very rapidly, involved diffusion of oxygen anions from the Ta₂O₅/gas interface to the alloy/Ta₂O₅ interface, where tantalum was selectively oxidized. Because the oxide grew more quickly than iridium could diffuse back into the alloy, the iridium coalesced into platelets of crystalline iridium-rich alloy that were oriented approximately parallel to the oxide/alloy interface, and which became embedded in a matrix of Ta₂O₅. The unoxidized core remained in the glassy state. The oxidation process and/or the dissolution of oxygen into the unoxidized alloy caused the alloy to become embrittled.     

The preparation of tantalum powder using a MR-EMR combination process

In the conventional metallothermic reduction (MR) process used to obtain tantalum powder in batch-type operation, it is difficult to control the morphology and location of the tantalum deposits. In contrast, an electronically mediated reaction (EMR) process is capable of overcoming this difficulty. It has the advantage of being a continuous process, but has the disadvantage of a poor reduction yield. A process known as the MR-EMR combination process is able to overcome the shortcomings of the MR and EMR processes. In this study, an MR-EMR combination process is applied to the production of tantalum powder via sodium reduction of K₂TaF₇. In the MR-EMR combination process, the total charge passed through an external circuit and the average particle size (FSSS) increase as the reduction temperature increases. In addition, the proportion of fine particles (−325 mesh) decreases as the reduction temperature increasess. The tantalum yield improved from 65 to 74% as the reduction temperature increased. Taking into account the charge, impurities, morphology, particle size and yield, a reduction temperature of 1123 K was found to be optimum for the MR-EMR combination process.     

美国3年来钽铌进口情况述评

依据英国金属网公布的2003年、2004年、2005年第1季度美国钽铌原料和制品进口统计数据．评述了美国钽铌市场的状况,着重关注了中国向美国出口钽铌的情况。     

电容器用铌粉和钽粉制备技术的进展

综述了铌粉和钽粉的现行生产工艺及几种新的还原方法，介绍了金属热还原反应中的电化学反应机理。钽粉的现行生产工艺几乎都用亨特法，铌粉则大部分采用铝热还原法生产。通过对亨特法还原条件、稀释剂组成等各种工艺参数的改进，已经可以制备纯度高、形态可控的金属钽粉。铌粉新还原方法的研究主要包括金属预成形热还原法、镁等蒸气还原预成形氧化物粉末的方法、镁或钠的蒸气还原氯化物蒸气的气相还原法、以液氨为介质在低温液相中均相还原铌或钽的氯化物的方法、反应媒介熔盐在强搅拌条件下的液体镁热还原金属氧化物的方法等。     

网状阴极法在碳钢表面沉积氮化钽薄膜的研究

介绍了一种在钢铁基体上制备氮化钽薄膜的新方法———网状阴极法。其设备简单、价格低廉。实验中发现 ,在工艺参数调配合适的条件下 ,可制备出结构为面心立方和密排六方结构的氮化钽薄膜。薄膜较致密且均匀 ,与基体结合良好。分析了优选工艺参数条件下合成的氮化钽膜的成分、组织、表面和断口形貌及结合力。     

钽的加工硬化速率及其显微组织

借助力学性能实验、金相显微镜和透射电镜等手段研究了纯钽的加工硬化速率。研究结果表明:纯钽的宏观加工硬化速率比较低。通过TEM观察,发现变形95%后,纯钽的位错密度都不是很高,存在有位错胞亚结构。其原因可能是因为钽的层错能高,位错容易交滑移,使位错密度降低。根据林位错硬化理论,也可以认为,钽在室温下塑性变形时,滑移系主要为{110}〈111〉,次滑移系的激活比较少,因此穿过主滑移系的林位错密度比较低,位错之间相互作用少,导致钽的加工硬化速率低。