磁控溅射低温制备ZnO：Al透明导电膜及其特性研究

采用锌、铝(Al 2 wt.%)合金靶,真空腔温度保持在50 ℃,运用直流反应磁控溅射法制得系列的ZnO∶Al (ZAO)薄膜.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、半导体霍尔效应测试、红外发射率测试仪等手段对薄膜进行了表征.薄膜呈C轴择优取向的六角纤锌矿结构;具有致密平滑的表面形貌;最佳工艺下样品在550 nm波长处透过率达93%;最低电阻率为4.99×10-4 Ω穋m;8 μm～14 μm波段平均红外发射率在0.3～0.54之间.分析了溅射过程中氧流量百分比和功率对上述特性的影响及各特性间的关系,讨论了薄膜在8 μm～14 μm波段平均红外发射率与其方块电阻的关系.     

液晶面板领域的中国专利申请状况分析

对日本、韩国及我国台湾地区主要液晶企业的中国专利申请状况进行了分析,希望能帮助国内液晶企业了解我国液晶领域专利申请概况和国外液晶企业在华专利申请布局信息,为我国液晶面板企业制定技术发展策略提供参考依据,从而制定合适自身的专利申请策略.     

A full W-band low noise amplifier module for millimeter-wave applications

A full W-band Low Noise Amplifier (LNA) Module is designed and fabricated in this letter. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz , has a small signal gain above 21 dB. The noise figure is lower than 5dB throughout the entire W-band (below 3 dB from 89 to 95GHz) at a room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low dc power consumption     

基于模型辨识的配电线路永久性故障判定方法

为提高配电线路重合闸成功率,提出一种相间故障检测技术,在配电变压器低压侧接入受控逆变电源,利用其给停电线路施加瞬时高压以击穿可能存在的故障点。基于产生的暂态电压、电流获取停电线路的频率响应,研究建立不同故障性质下停电线路的频域特性,进而结合模型辨识原理对停电线路内部结构进行有效辨识,判别线路故障性质以决定断路器是否重合闸。该方法现场可实施性强,既可用于配电线路自适应重合闸,也可用于停电一段时间后的线路再送电,理论、仿真和模拟实验都验证了该方法的有效性。     

（英）W波段InP HBT 宽带高功率压控振荡器

本文介绍了一款具有较高输出功率和宽调谐频率范围的基波压控振荡器单片集成电路。其制作工艺为f_T =170GHz,f_max =250GHz的0.8um InP DHBT工艺。电路核心部分采用了平衡式考毕兹振荡器拓扑,并在后面添加了一级缓冲放大器来抑制负载牵引效应,并提升了输出功率。DHBT的反偏CB结作为变容二极管来实现频率调谐。芯片测量结果表明,VCO的频率调谐范围为81- 97.3GHz,相对带宽为18.3 %。在调谐频率范围内最大输出功率为10.5 dBm,输出功率起伏在3.5 dB以内。在该VCO的最大调谐频率97.3 GHz处相位噪声为-88 dBc/Hz @1MHz。在目前所报道的InP HBT基VCO MMIC中,本文在如此宽的频率调谐范围内实现了最高的输出功率。     

Co/ATO复合薄膜的结构与电磁光特性

以低成本的无机盐 SnCl₂·2H₂O、SbCl₃和Co(NO₃)₂·9H₂O 为原料,采用溶胶-凝胶法与浸渍提拉技术成功地制备出Co掺杂的ATO(Sb掺杂SnO₂)复合薄膜。利用XRD、SEM、四探针电阻仪、紫外-可见光分光光度计及振动样品磁强计(VSM)等测试方法对Co/ATO复合薄膜的结构与物性进行了表征与评价。结果表明：少量的Co 掺杂ATO复合薄膜仍保持四方金红石结构,复合薄膜中的晶粒分布均匀,其晶粒尺寸分布为4～7 nm;随着Co含量的增加,Co/ATO复合薄膜的电阻率呈现出先降低后提高,且当Co含量为0.5 mol %时,Co/ ATO复合薄膜的电阻率最低为5. 6×10- 3Ω·cm;在400～700 nm可见光范围内,平均透过率达到90 %以上,其光学带隙在3.9～4.0eV之间,且随着Co含量的增加,可见光透过率和光学带隙呈下降趋势;Co含量为3.0 mol%的ATO复合薄膜具有室温铁磁性,其矫顽力约为100Oe,磁性根源主要归结为磁性原子与基体载流子相互作用的结果。     

陶瓷靶射频磁控溅射TiO2薄膜的制备和光催化特性

Transparent titania thin films were prepared on glass substrates by radio frequency magnetron sputtering from TiO2 ceramic target. The structure and morphology of those films with different sputtering power and substrate temperature has been measured with X-ray diffractometer (XRD) and atomic force microscope (AFM). It was found that the films were anatase and a mix of anatase-rutile with different condition. The transmission of the films has been studied by using UV-VIS-NIR spectrometer. It shows absorption edge has a little red shift with the increase of sputtering power and substrate temperature. The photocatalytic activity of the films was tested on the degradation of Rhodamine B solution. T.he highest degradation efficiency in our experiment was obtained in the film deposited at 550℃ and 130W.     

fT=260 GHz and fmax=607 GHz of 100-nm-gate In0.52Al0.48As/In0.7Ga0.3As HEMTs with Gm.max=1441 mS/mm

The 100-nm T-gate InP-based InAlAs/InGaAs high electron mobility transistors (HEMTs) with the width of 2×50 μm and source-drain space of 2.4 μm are systematically investigated. High indium (In) composition of InGaAs layer was adopted to acquire the higher mobility of the channel layer. A sandwich structure was adopted to optimize the cap layers and produce a very low contact resistance. The fabricated devices exhibit extrinsic maximum transconductance G_m.max=1441 mS/mm, cutoff frequency f_T=260 GHz, and maximum oscillation frequency f_max=607 GHz. A semi-empirical model has been developed to precisely fit the low-frequency region of scattering parameters (S parameters) for InP-based HEMTs. Excellent agreement between measured and simulated S parameters demonstrates the validity of this approach.     

磁控溅射低温制备ZnO∶Al透明导电膜及其特性研究

采用锌、铝(Al 2 wt.%)合金靶,真空腔温度保持在50 ℃,运用直流反应磁控溅射法制得系列的ZnO∶Al (ZAO)薄膜.通过X射线衍射(XRD)、扫描电子显微镜(SEM)、分光光度计、半导体霍尔效应测试、红外发射率测试仪等手段对薄膜进行了表征.薄膜呈C轴择优取向的六角纤锌矿结构;具有致密平滑的表面形貌;最佳工艺下样品在550 nm波长处透过率达93%;最低电阻率为4.99×10-4 Ω穋m;8 μm～14 μm波段平均红外发射率在0.3～0.54之间.分析了溅射过程中氧流量百分比和功率对上述特性的影响及各特性间的关系,讨论了薄膜在8 μm～14 μm波段平均红外发射率与其方块电阻的关系.     

InP基三端太赫兹固态电子器件和电路发展

随着微电子技术的飞速发展,半导体器件的截止频率已经进入到太赫兹频段,太赫兹电路的频率特性得到极大发展。以固态器件为基础的太赫兹电路的工作频率进入到THz频段。本文重点介绍InP基双极器件和场效应器件的发展以及在太赫兹电路和系统中的应用。