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具有在片稳定网络的GaAs HBT微波功率管 总被引:1,自引:0,他引:1
采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞.依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性.Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21.6dBm.功率合成电路验证了该功率管具有高稳定性,非常适合制作微波大功率HBT放大器. 相似文献
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Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology’s ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2:1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic(CML) with 30 transistors.The circuit operated at a peak clock frequency of 40 GHz and dissipated 650 mW from a single -5 V supply. 相似文献
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本文描述了我国第一台采用径向相对论电子束泵浦的Ar-N_2转移激光器。该激光器在3577A和3805两条谱线上同时得到激光束,输出为3mJ,能量体密度为1J/1。文中对其性能也进行了研究。 相似文献
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40GHz InGaAs/InP CML 结构静态分频器 总被引:1,自引:1,他引:0
Static frequency dividers are widely used as a circuit performance benchmark or figure-of-merit indicator to gauge a particular device technology's ability to implement high speed digital and integrated high performance mixed-signal circuits.We report a 2:1 static frequency divider in InGaAs/InP heterojunction bipolar transistor technology.This is the first InP based digital integrated circuit ever reported on the mainland of China. The divider is implemented in differential current mode logic(CML) with ... 相似文献
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SDD定义的InP DHBT大信号模型 总被引:1,自引:1,他引:0
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS. The model accounts for most physical phenomena incluuing the self-heating effect, Kirk effect, soft knee effect, base collector capacitance and collector transit time. The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC, multi-bias small signal S parameters for InP DHBTs. 相似文献
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从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型. 同时针对自有工艺和器件特性,采用SDD (symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型. 模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性. 相似文献