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In most of the total dose radiation models,the drift of the threshold voltage and the degradation of the carrier mobility were only studied when the bulk potential is zero.However,the measured data indicate that the total dose effect is closely related to the bulk potential.In order to model the influence of the bulk potential on the total dose effect,we proposed a macro model.The change of the threshold voltage,carrier mobility and leakage current with different bulk potentials were all modeled in this model,and the model is well verified by the measured data based on the 0.35μm PDSOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences,especially the part of the leakage current. 相似文献
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MD2080硬盘驱动器主轴马达起动速度不正常。 故障现象:MD2080硬盘驱动器主轴马达不能起动,或者能起动但速度不正常。 维修过程如下: 1、加电,检测JP1的41脚的电压是否为5V,如果无5V电压,则检查电源。 2、检测Q9的1脚、U19的15脚的电压是否为5V,如果无5V,则进行下列步骤: 相似文献
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对90 nm PDSOI MOSFET的热阻进行了提取与研究。以H型栅MOSFET为研究对象,将源体二极管作为温度敏感器,通过测量源体结电流与器件温度的关系以及源体结电流与器件功率的关系,获得MOS器件功率与器件温度的关系,从而获取MOS器件热阻值。实验结果表明,该工艺下PMOS器件的热阻比NMOS器件大,其原因是PMOS体区掺杂浓度比NMOS高,而掺杂浓度越高,导热性越差,热阻就越大;H型栅器件的归一化热阻随沟道宽度的增加而增大,其原因是随着沟道宽度的增加,体引出区域对器件导热的贡献变小;热阻随环境温度的上升而减小,其原因是二氧化硅埋氧层的导热率随温度的升高而增大。 相似文献
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提出了一种新型隧穿场效应晶体管(TFET)结构,该结构通过在常规TFET靠近器件栅氧化层一侧的漏-体结界面引入一薄层二氧化硅(隔离区),从而减小甚至阻断反向栅压情况下漏端到体端的带带隧穿(BTBT),减弱TFET的双极效应,实现大幅度降低器件泄漏电流的目的。利用TCAD仿真工具对基于部分耗尽绝缘体上硅(PDSOI)和全耗尽绝缘体上硅(FDSOI)的TFET和新型TFET结构进行了仿真与对比。仿真结果表明,当隔离区宽度为2 nm,高度大于10 nm时,可阻断PDSOI TFET的BTBT,其泄漏电流下降了4个数量级;而基于FDSOI的TFET无法彻底消除BTBT和双极效应,其泄漏电流下降了2个数量级。因此新型结构更适合于PDSOI TFET。 相似文献
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Deep submicron partially depleted silicon on insulator (PDSOI) MOSFETs with H-gate were fabricated based on the 0.35 μm SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences. Because the self-heating effect (SHE) has a great influence on SOI, extractions of thermal resistance were done for accurate circuit simulation by using the body-source diode as a thermometer. The results show that the thermal resistance in an SOI NMOSFET is lower than that in an SOI PMOSFET; and the thermal resistance in an SOI NMOSFET with a long channel is lower than that with a short channel. This offers a great help to SHE modeling and parameter extraction. 相似文献
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cdma2000等3G无线通信网络具有相当的复杂性,为了在节约运营商成本的前提下使新建3G网络的覆盖和容量等性能最优,需要专门的软件来进行无线网络规划仿真。本文指出无线网络规划仿真属于静态系统级仿真,介绍了如何利用Monte-Carlo仿真方法实现cdma20001xEV-DO系统的规划仿真,并给出了规划仿真算法的具体流程。通过对算法仿真结果的分析证明了规划仿真算法的正确性和实用性。该算法便于计算机实现,能够用于实际的无线网络规划仿真。 相似文献
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The STI stress effect is investigated based on the 0.13 m SOI process developed by the Institute of Microelectronics of the Chinese Academy of Sciences(IMECAS). It shows that the threshold voltage and mobility are all affected by the STI stress. The absolute value of the threshold voltage of NMOS and PMOS increased by about 10%, the saturation current of NMOS decreases by about 20%, while the saturation current of PMOS increases by about 20%. It is also found that the lower temperature enhances the STI stress and then influences the device performance further. Then a macro model for this effect is proposed and is well verified. 相似文献