共查询到19条相似文献,搜索用时 220 毫秒
1.
报道了基于50 nm栅工艺的AlN/GaN异质结的G波段器件结果。在AlN/GaN HEMT外延结构上,采用电子束直写工艺制备了栅长50 nm的"T"型栅结构。器件直流测试最大漏电流为2.1 A/mm,最大跨导为700 mS/mm;小信号测试外推其电流增益截止频率和最大振荡频率分别为180 GHz及350 GHz。采用该工艺制备的共面波导(CPW)结构的放大器工作电压6 V,在162 GHz小信号增益大于10 dB。166 GHz连续波峰值输出功率11.36 dBm,功率密度达到684 mW/mm,功率密度水平达到GaN器件在G频段的高水平。 相似文献
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基于SiC衬底AlGaN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的AlGaN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+ GaN 欧姆接触工艺实现了器件尺寸的缩小, 有效源漏间距(Lsd)缩小至600 nm.此外, 采用自对准工艺制备了60 nm T型栅.由于器件尺寸的缩小, 在Vgs=2 V下, 器件最大饱和电流(Ids)达到2.0 A/mm, 该值为AlGaN/GaN HFETs器件直流测试下的最高值, 器件峰值跨导达到608 mS/mm.小信号测试表明, 器件fT和fmax最高值分别达到152 GHz和219 GHz. 相似文献
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《红外与毫米波学报》2016,(5)
基于SiC衬底AlGaN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的AlGaN/GaN异质结场效应晶体管(HFETs).基于MOCVD外延n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm.此外,采用自对准工艺制备了60 nm T型栅.由于器件尺寸的缩小,在Vgs=2 V下,器件最大饱和电流(Ids)达到2.0 A/mm,该值为AlGaN/GaN HFETs器件直流测试下的最高值,器件峰值跨导达到608 mS/mm.小信号测试表明,器件fT和fmax最高值分别达到152 GHz和219 GHz. 相似文献
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《红外与毫米波学报》2016,(6)
基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率(f_T)和最大振荡频率(f_(max))的InAlN/GaN异质结场效应晶体管(HFETs).基于再生长n+GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600nm.此外,采用自对准栅工艺制备60nmT型栅.由于器件尺寸的缩小,在Vgs=1V时,器件最大饱和电流(Ids)达到1.89A/mm,峰值跨导达到462mS/mm.根据小信号测试结果,外推得到器件的f_T和f_(max)分别为170GHz和210GHz,该频率特性为国内InAlN/GaNHFETs器件频率的最高值. 相似文献
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基于蓝宝石衬底InAlN/GaN异质结材料研制具有高电流增益截止频率(fT)和最大振荡频率(fmax)的InAlN/GaN异质结场效应晶体管 (HFETs)。基于再生长n GaN欧姆接触工艺实现了器件尺寸的缩小,有效源漏间距(Lsd)缩小至600 nm。此外,采用自对准栅工艺制备60 nm T型栅。由于器件尺寸的缩小,在Vgs= 1 V下,器件最大饱和电流(Ids)达到1.89 A/mm,峰值跨导达到462 mS/mm。根据小信号测试结果,外推得到器件的fT和fmax分别为170 GHz和210 GHz,该频率特性为国内InAlN/GaN HFETs器件频率的最高值。 相似文献
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通过利用MOCVD生长的高质量蓝宝石衬底InAlN/AlN/GaN异质结材料,获得了高的二维电子气面密度,其值为1.65×10<'13>cm<'-2>.通过该结构制备了0.15 μm栅长InAlN/AIN/GaN HEMT器件,获得了相关的电学特性:最大电流密度为1.3A/mm,峰值跨导为260mS/ram,电流增益截... 相似文献
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美国加利福尼亚大学研制成新型异质结Al GaN/AlN/GaNHEMT。对于通常的HEMT在高的电荷密度下 ,插入极薄的AIN界面层 (~ 1nm )保持高迁移率 ,提高有效△Ec和降低合金散射。基于这种结构的器件具有优良的Dc和RF性能。在VGS为 2V下 ,高的峰值电流为 1A/mm ,在 8GHz下 ,功率附加效率为 2 8%时的输出功率密度为8 4W /mm。AlGaN/AlN/GaN大功率微波HEMT@一凡 相似文献
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本文论述了AlGaN/GaN双异质结高电子迁移率晶体管的特性,该结构使用Al组分为7%的AlGaN来代替传统的GaN作为缓冲层。Al0.07Ga0.93N缓冲层增加了二维电子气沟道下方的背势垒高度,有效提高了载流子限阈性,从而造成缓冲层漏电的显著减小以及击穿电压的明显提高。对于栅尺寸为0.5100μm,栅漏间距为1μm的器件,AlGaN/GaN 双异质结器件的击穿电压(~100V)是常规单异质结器件的两倍(~50V)。本文中的双异质结器件在漏压为35V、频率为4GHz下,最大输出功率为7.78W/mm,最大功率附加效率为62.3%,线性增益为23dB。 相似文献
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报道了利用南京电子器件研究所生长的蓝宝石衬底AlGaN/GaN异质结材料制作的HEMT,器件功率输出密度达4W/mm。通过材料结构及生长条件的优化,利用MOCVD技术获得了二维电子气(2DEG)面密度为0.97×1013cm-2、迁移率为1000cm2/Vs的AlGaN/GaN异质结构材料,用此材料完成了栅长1μm、栅宽200μm AlGaN/GaN HEMT器件的研制。小信号测试表明器件的fT为17GHz、最高振荡频率fmax为40GHz;负载牵引测试得到2GHz下器件的饱和输出功率密度为4.04W/mm。 相似文献
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AlGaN/AlN/GaN high-power microwave HEMT 总被引:2,自引:0,他引:2
Shen L. Heikman S. Moran B. Coffie R. Zhang N.-Q. Buttari D. Smorchkova I.P. Keller S. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2001,22(10):457-459
In this letter, a novel heterojunction AlGaN/AlN/GaN high-electron mobility transistor (HEMT) is discussed. Contrary to normal HEMTs, the insertion of the very thin AlN interfacial layer (~1 nm) maintains high mobility at high sheet charge densities by increasing the effective ΔEC and decreasing alloy scattering. Devices based on this structure exhibited good DC and RF performance. A high peak current 1 A/mm at VGS=2 V was obtained and an output power density of 8.4 W/mm with a power added efficiency of 28% at 8 GHz was achieved 相似文献
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A Ka-band GaN amplifier MMIC has been designed in CPW technology,and fabricated with a domestic GaN epitaxial wafer and process.This is,to the best of our knowledge,the first demonstration of domestic Kaband GaN amplifier MMICs.The single stage CPW MMIC utilizes an AlGaN/GaN HEMT with a gate-length of 0.25μm and a gate-width of 2×75μm.Under Vds=10 V,continuous-wave operating conditions,the amplifier has a 1.5 GHz operating bandwidth.It exhibits a linear gain of 6.3 dB,a maximum output power of 22 dBm and a peak PAE of 9.5%at 26.5 GHz.The output power density of the AlGaN/GaN HEMT in the MMIC reaches 1 W/mm at Ka-band under the condition of Vds=10 V. 相似文献
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We report the DC and RF characteristics of AlN/GaN high electron mobility transistors(HEMTs) with the gate length of 100 nm on sapphire substrates. The device exhibits a maximum drain current density of 1.29 A/mm and a peak transconductance of 440 m S/mm. A current gain cutoff frequency and a maximum oscillation frequency of 119 GHz and 155 GHz have been obtained, respectively. Furthermore, the large signal load pull characteristics of the AlN/GaN HEMTs were measured at 29 GHz. An output power density of 429 m W/mm has been demonstrated at a drain bias of 10 V. To the authors’ best knowledge, this is the earliest demonstration of power density at the Ka band for Al N/Ga N HEMTs in the domestic, and also a high frequency of load-pull measurements for Al N/Ga N HEMTs. 相似文献
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30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs 总被引:2,自引:0,他引:2
Inoue T. Ando Y. Miyamoto H. Nakayama T. Okamoto Y. Hataya K. Kuzuhara M. 《Microwave Theory and Techniques》2005,53(1):74-80
This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 /spl mu/m and a gate length of 0.09 /spl mu/m has exhibited a current gain cutoff frequency (f/sub T/) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50/spl times/10/sup 7/ to 1.75/spl times/10/sup 7/ cm/s in a gate-length range of 0.09-0.25 /spl mu/m. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 /spl mu/m. 相似文献
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Wong M.M. Chowdhury U. Sicault D. Becher D.T. Denyszyn J.C. Zhu T.G. Feng M. Dupuis R.D. 《Electronics letters》2002,38(9):428-429
The performance of an innovative delta-doped AlGaN/AlN/GaN heterojunction field-effect transistor (HFET) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapour deposition. These structures exhibit a maximum carrier mobility of 1058 cm2/V s and a sheet carrier density of 2.35×1013 cm-2 at room temperature, corresponding to a large ns μn product of 2.49×1016 V s. HFET devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at VG=+1 V) and a peak transconductance of gm=240 mS/mm. High-frequency device measurements yielded a cutoff frequency of ft≃50 GHz and maximum oscillation frequency fmax≃130 GHz 相似文献
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AlN/GaN Insulated-Gate HFETs Using Cat-CVD SiN 总被引:1,自引:0,他引:1
《Electron Device Letters, IEEE》2006,27(9):719-721
The authors fabricated SiN/AlN/GaN metal–insulator–semiconductor heterostructure field-effect transistors (MIS-HFETs) using SiN passivation by catalytic chemical vapor deposition (Cat-CVD). Cat-CVD SiN increased the electron density of AlN/GaN HFETs by compensating the surface depletion of the two-dimensional electron gas. The MIS-HFETs had a maximum drain current density of 0.95 A/mm and a peak extrinsic transconductance of 211 mS/mm. A current-gain cutoff frequency of 107 GHz and maximum oscillation frequency of 171 GHz were obtained for the 60- and 70-nm-gate devices, respectively. 相似文献
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Crespo A. Bellot M.M. Chabak K.D. Gillespie J.K. Jessen G.H. Miller V. Trejo M. Via G.D. Walker D.E. Winningham B.W. Smith H.E. Cooper T.A. Gao X. Guo S. 《Electron Device Letters, IEEE》2010,31(1):2-4
We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al0.82In0.18N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier. This device delivered a maximum of 5.8 W/mm with a power-added efficiency of 43.6% biased at VDS = 20 V and 10% IDSS when matched for power at CW. The device was grown by metal-organic chemical vapor deposition with 2.8-?m source-drain spacing and a gate length of 160 nm. An excellent ohmic contact was obtained with an Rc of 0.62 ?·mm. The maximum extrinsic transconductance was 354 mS/mm with an IDSS of 1197 mA/mm at a VGS of 0 V, an ft of 79 GHz, and an fmax of 113.8 GHz. 相似文献
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针对氮化镓大功率放大器,由于传统1/4λ枝节线的电桥互耦造成放大器的直流自激和低频自激,在传统1/4λ传输枝节的Wilkinson电桥的基础上,结合氮化镓器件尺寸,设计出以3/4λ传输枝节的Wilkinson电桥为功率分配器/合成器。其输出端口尺寸为27.2mm。在8GHz~9GHz内,插入损耗<1dB,输出端口隔离度>14dB,端口回波损耗>9dB。利用实验室自制的SiC材料衬底的2.5mm栅宽GaN HEMT器件为放大单元,设计完成了两路合成放大器,在8GHz连续波条件下,放大器饱和输出功率为41.46dBm,合成效率为82.3%。通过分析发现,放大器合成效率的下降主要是由每路放大单元特性不一致和功率合成网络损耗所造成的。 相似文献
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X波段GaN单片电路低噪声放大器 总被引:1,自引:1,他引:0
采用0.25μm GaN HEMT制备工艺在AlGaN/GaN异质结材料上研制了高性能X波段GaN单片电路低噪声放大器.GaN低噪声单片电路采取两级微带线结构,10V偏压下芯片在X波段范围内获得了低于2.2 dB的噪声系数,增益达到18 dB以上,耐受功率达到了27 dBm.在耐受功率测试中发现GaN低噪声HEMT器件... 相似文献