不同气氛保护下退火制备的CuO/SiO2复合薄膜微观结构分析

采用射频磁控共溅射法在Si(111)衬底上沉积Cu/SiO2复合薄膜.然后在N2和NH3保护下高温退火,再于空气中自然冷却氧化,制备出CuO结构,并对其微观结构进行分析.N2保护下退火温度为1100℃时样品中主晶相为立方晶系的CuO(200)晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu,O元素,冷却氧化形成CuO/SiO2复合薄膜.NH3气氛保护下退火,随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高.样品于900℃和1100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙;后者由片融状小颗粒融合而成,颗粒表面比较光滑.     

不同气氛保护下退火制备的CuO/SiO2复合薄膜微观结构分析

采用射频磁控共溅射法在Si (111)衬底上沉积Cu/SiO2 复合薄膜,然后在N2和NH3保护下高温退火,再于空气中自然冷却氧化,制备出CuO结构,并对其微观结构进行分析. N2保护下退火温度为1100℃时样品中主晶相为立方晶系的CuO (200）晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu,O元素,冷却氧化形成CuO/SiO2复合薄膜. NH3气氛保护下退火,随着退火温度的升高,CuO由单斜晶相逐渐转变为立方晶相,CuO薄膜结晶质量提高. 样品于900℃和1100℃退火后,形成有序散落的微米级颗粒,前者由粒状团簇组成,颗粒表面比较粗糙;后者由片融状小颗粒融合而成,颗粒表面比较光滑.     

退火工艺对La-Nb共掺杂Bi_4Ti_3O_(12)薄膜结构的影响

采用sol-gel法制备了Si基Bi3.25La0.75Ti2.94Nb0.06O12.03(BLTN)铁电薄膜,研究了退火温度、升温速率和退火时间对BLTN薄膜微观结构的影响。结果表明:制备的BLTN薄膜具有单一的钙钛矿结构,且为随机取向,表面平整致密;退火温度由550℃升高到750℃时,薄膜的衍射峰强度增强,晶粒尺寸由65 nm增大到110 nm;退火升温速率由10℃/min提高为20℃/min时,薄膜的晶化程度降低;退火时间对薄膜的晶相结构影响不大,但时间超过30 min会造成薄膜表面孔洞增多、致密性下降。     

电泳沉积法制备CuO薄膜的微观结构分析

在经清洗后的硅(111)衬底上,分别采用电泳过程中氧化制备CuO薄膜和电泳制备Cu膜后退火氧化制备CuO薄膜。用XRD和SEM对薄膜样品进行了组分、表面形貌等微观结构的分析,发现两种方法制备的CuO薄膜的组分基本一致,但形貌完全不同,前者是由非常均匀的CuO小颗粒(200nm)相连而成团簇状,后者是由一些大小均匀的半径约为200nm的CuO小颗粒和气孔相互交融紧密连接而成的条状或块状。电泳过程中氧化制备的CuO薄膜结晶质量较好。     

CoMnNi氧化物非晶薄膜退火研究

用高频溅射法生长CoMnNi氧化物非晶薄膜并进行退火实验.对不同温度退火的样品作X射线分析及电阻测量.结果表明,CoMnNi氧化物非晶薄膜在低于550℃退火,薄膜发生结构弛豫,电阻率升高;550～750℃温区退火,薄膜结构产生晶化.随着退火温度的升高,晶化程度增强,电阻率逐步下降;高于750℃退火,薄膜开始由立方尖晶石向四方尖晶石结构转化,电阻率增大.还给出了老化实验结果.     

InN薄膜的退火特性

对InN薄膜在氨气氛下的高温退火行为进行了研究.利用XRD,SEM和XPS对样品进行了分析.结果表明,InN薄膜的结晶质量和表面形貌并不随退火温度单调变化.由于高温退火时N原子的挥发,剩下的In原子在样品表面聚集形成In颗粒.当退火温度高于425℃时,In原子的脱吸附作用增加,从而导致样品表面的In颗粒在退火温度高于425℃时逐渐减少.XRD和SEM结果表明In颗粒密度最高的样品具有最差的结晶质量.这种现象可能是由于In颗粒隔离了其下面的InN与退火气氛的接触,同时,金属In和InN结构上的差异也可能在InN中导致了高密度的结构缺陷,从而降低了InN薄膜的结晶质量.     

Si纳米线表面Ni薄膜生长工艺

研究了Si纳米线表面Ni薄膜生长工艺。采用热蒸发法以SiO为起始原料制备自组生长的Si纳米线,再以5%(体积分数)HF剔除Si纳米线表面硅氧化合物,采用氩离子磁控溅射的方法在Si纳米线表面溅射一定厚度的无定形Ni颗粒,此后对镀Ni的Si纳米线进行完整晶体结构的退火处理。应用高分辨透射电镜(HRTEM)等结构表征工具分析了Si纳米线表面Ni薄膜的形成过程,HRTEM结果表明,在350℃左右退火得到的Si纳米线表面能形成连续的、结构完整的Ni薄膜;退火温度低于300℃时,表面溅射的Ni结晶效果较差;退火温度在800℃时,表面Ni薄膜发生团聚,形成了分立的纳米颗粒。     

InN薄膜的退火特性

对InN薄膜在氨气氛下的高温退火行为进行了研究.利用XRD,SEM和XPS对样品进行了分析.结果表明,InN薄膜的结晶质量和表面形貌并不随退火温度单调变化.由于高温退火时N原子的挥发,剩下的In原子在样品表面聚集形成In颗粒.当退火温度高于425℃时,In原子的脱吸附作用增加,从而导致样品表面的In颗粒在退火温度高于425℃时逐渐减少.XRD和SEM结果表明In颗粒密度最高的样品具有最差的结晶质量.这种现象可能是由于In颗粒隔离了其下面的InN与退火气氛的接触,同时,金属In和InN结构上的差异也可能在InN中导致了高密度的结构缺陷,从而降低了InN薄膜的结晶质量.     

磁控溅射YSZ薄膜的激光损伤阈值

利用射频磁控溅射方法在不同衬底上制备出掺Y2O3 8 %的YSZ薄膜, 用X射线衍射、原子力显微镜(AFM)、扫描电子显微镜和透射光谱测定薄膜的结构、表面特性和光学性能, 研究了退火对薄膜结构和光学性能的影响。结果表明：随着退火温度的升高, 薄膜结构依次从非晶到四方相再到四方和单斜混合相转变, AFM分析显示薄膜表面YSZ颗粒随退火温度升高逐渐增大, 表面粗糙度相应增大, 晶粒大小计算表明, 退火温度的提高有助于薄膜的结晶化, 退火温度从400 ℃到1100 ℃变化范围内晶粒大小从20.9 nm增大到42.8 nm; 同时根据ISO11254-1激光损伤测试标准对光学破坏阈值进行了测量, 发现与其他电子束方法制备的YSZ薄膜损伤阈值结果比较, 溅射法制备的薄膜损伤阈值有了一定程度的提高。     

退火温度对纳米TiO2薄膜微结构的影响

利用XRD、IR、UV-VIS、AFM、XPS等手段,研究了退火温度对溶胶–凝胶法制备的纳米TiO2薄膜微结构和表面形貌的影响。450~600℃退火处理的薄膜呈锐钛矿和金红石型混晶结构,700℃退火后为纯金红石相;水峰的吸收峰消失在300~500℃之间,至500℃有机基团完全消失,薄膜表面主要有C,Ti,O三种元素;改变退火温度,可以使薄膜的禁带宽度在3.26~3.58eV之间变化,可以在一定范围内,获得不同折射率的TiO2纳米薄膜;薄膜的表面粗糙度(RMS)为2~3nm。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.