共查询到20条相似文献,搜索用时 765 毫秒
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分析了双极型功率晶体管芯片温度分布与版图设计的相关性,指出版图排不合理导致芯片中区域温度偏高,是诱发二次击穿的一个重要原因。提出了一种提高功率晶体管抗热模式二次击穿耐量的新思路,理论分析与实际应用证明,把发射区安排在基区引线条周边的新设计,可显著改善双极型功率晶体管抗二次击穿特性。 相似文献
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试验研究了采用两步扩散发射区结构的功率晶体管,两步扩散发射区结构在提高芯片上温度分布均匀性和器件抗二次击穿能力方面具有较好的作用.两步扩散发射区器件管芯上的温度分布较一步扩散发射区更为均匀,二次击穿耐量可提高80%以上. 相似文献
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金槽BSIT:一种新型静态感应晶体管 总被引:2,自引:0,他引:2
功率型静态感应晶体管BSIT是一种高频、高速的功率场控制器件,它既具有功率MOS管一样高的开关速度,又具有双极晶体管一样低的导通压降。它不会发生功率MOS管那样的静电击窗,也不会发生双极晶体管那样的二次击穿。它具有很大的过电流能力,有很宽的安全工作区,是一种非常优良的功率开关器件。 相似文献
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本文所指的大功率晶体管是指普通型双极大功率晶体管。包括低频大功率晶体管、功率开关晶体管、高反压晶体管和功率达林顿晶体管四部分。功率场效应晶体管VDMOS、功率晶体管模块GTR、绝缘栅晶体管IGBT、静电感应晶体管SIT、静电感应晶闸管SITH及 相似文献
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高性能纵向pnp晶体管的研制 总被引:2,自引:2,他引:0
pnp晶体管中由于空穴的迁移率较电子的迁移率低得多,再加上纵向pnp管有比npn管严重得多的基区宽度调变效应,一般情况下,难以使纵向pnp管的性能与npn管的性能相媲美。我们从理论上分析了提高纵向pnp管性能的途径,并设计了一套新的工艺流程。在p型外延材料上研制出了BV_(ceo)≥90V、V_(be)≤0.8V、f_T=900MHz、V_(ces)=0.2V、β=60~150、厄利电压大于150V的纵向pnp晶体管。在P型单晶材料上研制出了BV_(ceo)≥65V、f_T≥560MHz、β=60~150的纵向pnp晶体管。具有这种性能的纵向pnp管目前在国内外还很少见。 相似文献
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《Organic Electronics》2014,15(9):2126-2134
Water-gated organic transistors have attracted considerable attention in the field of biosensors, thanks to their capability of operating in the aqueous environment typical of biological systems at very low voltages (∼1 V). Some examples have been recently reported in the literature, employing different organic materials as the active semiconducting layer, ranging from small molecules to single crystals. Here we report on water-gated polymer-based organic-field effect devices using poly(2,5-bis(3-hexadecylthiophen-2-yl)thieno[3,2-b]thiophene) (pBTTT) as the active layer. Very promising electronic performances, in terms of mobility and operating voltages are obtained; notably, the charge carrier mobility is in the order of 0.08 cm2/V s, which is of the same order of magnitude of values reported for single-crystal based water-gated devices, and consistent with values reported for solid-state polymer dielectric transistors. Moreover, the pBTTT-based device shows improved electrochemical stability, as compared to previously reported polymer based water-gated devices. Importantly, good functioning of the device is demonstrated also when water is replaced by physiological-like solutions. Critical to the transistors operation, besides the good transport properties of the active material, is the key-role played by alkyl side chains and ordered morphology of the polymer at the interface with the liquid environment, which we highlight here for the first time. Our contribution overall provides a useful step towards the development of bio-organic sensors, with enhanced properties in terms of sensitivity and stability, and for a successful exploitation of organic based field effect transistors in biotic/abiotic interfaces. 相似文献
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We have investigated organic thin-film transistors (OTFTs) with a bilayer of rubbed and evaporated hydrocarbon-based acene 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) as an active layer. Using a rubbing process after spin-coating the C8-BTBT, crystallinity of the C8-BTBT thin film was improved and resultant superior OTFT characteristics were realized. We obtained a field-effect mobility of 1.6 cm2/Vs, a threshold voltage of −8.2 V, an on-off ratio of 106, and a subthreshold swing of 55 mV/decade. 相似文献
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Systematic Width-and-Length Dependent CMOS Transistor Mismatch Characterization and Simulation 总被引:3,自引:0,他引:3
Teresa Serrano-Gotarredona Bernabe´ Linares-Barranco 《Analog Integrated Circuits and Signal Processing》1999,21(3):271-296
This paper presents a methodology for characterizing the random component of transistor mismatch in CMOS technologies. The methodology is based on the design of a special purpose chip which allows automatic characterization of arrays of NMOS and PMOS transistors of different sizes. Up to 30 different transistor sizes were implemented in the same chip, with varying transistors width W and length L. A simple strong inversion large signal transistor model is considered, and a new five parameters MOS mismatch model is introduced. The current mismatch between two identical transistors is characterized by the mismatch in their respective current gain factors /, V
TO threshold voltages , bulk threshold parameters , and two components for the mobility degradation parameter mismatch 0 and e. These two components modulate the mismatch contribution differently, depending on whether the transistors are biased in ohmic or in saturation region. Using this five parameter mismatch model, an extraordinary fit between experimental and computed mismatch is obtained, including minimum length (1 m) transistors for both ohmic and saturation regions. Standard deviations for these five parameters are obtained as well as their respective correlation coefficients, and are fitted to two dimensional surfaces f(W, L) so that their values can be predicted as a function of transistor sizes. These functions are used in an electrical circuit simulator (Hspice) to predict transistor mismatch. Measured and simulated data are in excellent agreement. 相似文献
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基于Z参数的微波晶体管高频噪声网络分析方法 总被引:1,自引:0,他引:1
For high-capacity wavelength division multiplexing(WDM) in optical fiber transmission systems, multi-wavelength light sources are needed to be operated at precisely-determined wavelength swith a fine separation of 0.8 or 1.6nm.Increasing efforts have been put into deve... 相似文献
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