A 10-bit 5-MS/s successive approximation ADC cell used in a 70-MS/sADC array in 1.2-μm CMOS

A 10-bit 5-MS/s successive approximation ADC cell and a 70-MS/s parallel ADC array based on this cell, designed and fabricated in a 1.2-μm CMOS process, are presented. The ADC cell was designed to have an input bandwidth of more than 35 MHz and a sampling time of 14 nS at a clock rate of 70 MHz. The parallel ADC array consists of 14 such cells which are timed in one clock cycle skew successively in order to obtain digitized data every clock cycle. A two-step principle based on unsymmetrical dual-capacitor charge-redistribution-coupling has been used. With the help of a reset function, the comparator presents a fast response to the successive comparison. Each successive approximation ADC cell occupies an area of 0.6 mm² and the core of the parallel ADC array occupies an area of 2.7×3.3 mm². The power consumptions for the cell and the parallel ADC array are 18 mW and 267 mW respectively     

Current mode ADC design in a 0.5-μm CMOS process

This paper presents a pipelined current mode analog to digital converter (ADC) designed in a 0.5-μm CMOS process. Adopting the global and local bias scheme, the number of interconnect signal lines is reduced numerously, and the ADC exhibits the advantages of scalability and portability. Without using linear capacitance,this ADC can be implemented in a standard digital CMOS process; thus, it is suitable for applications in the system on one chip (SoC) design as an analogue IP. Simulations show that the proposed current mode ADC can operate in a wide supply range from 3 to 7 V and a wide quantization range from ±64 to ±256μA. Adopting the histogram testing method, the ADC was tested in a 3.3 V supply voltage/±64μA quantization range and a 5 V supply voltage/±256μA quantization range, respectively. The results reveal that this ADC achieves a spurious free dynamic range of 61.46dB, DNL/INL are -0.005 to +0.027 LSB/-0.1 to +0.2 LSB, respectively, under a 5 V supply voltage with a digital error correction technique.     

基于冗余子级的流水线ADC校准技术

提出了基于冗余子级的流水线ADC后端校准技术,采用精度较高的流水线冗余子级代替参考ADC,对流水线ADC的各个子级校准,替代了对整个ADC的校准,使校准系统无需降频同步,较好地解决了传统校准系统中主信号通路与参考ADC信号通路不同步的问题。对Matlab/Simulink中搭建的精度为16位、采样频率为10 MS/s的流水线ADC进行仿真,结果表明,当输入信号频率为4.760 5 MHz时,经过校准,流水线ADC的有效位和无杂散动态范围分别由9.37位和59.96 dB提高到15.32位和99.55 dB。进一步的FPGA硬件验证结果表明,流水线ADC的有效位和无杂散动态范围分别为12.73位和98.62 dB,初步验证了该校准算法的可行性。     

Blind equalization of time errors in a time-interleaved ADC system

To significantly increase the sampling rate of an analog-to-digital converter (ADC), a time-interleaved ADC system is a good option. The drawback of a time-interleaved ADC system is that the ADCs are not exactly identical due to errors in the manufacturing process. This means that time, gain, and offset mismatch errors are introduced in the ADC system. These errors cause distortion in the sampled signal. In this paper, we present a method for estimation and compensation of the time mismatch errors. The estimation method requires no knowledge about the input signal, except that it should be band limited to the foldover frequency /spl pi//T/sub s/ for the complete ADC system. This means that the errors can be estimated while the ADC is running. The method is also adaptive to slow changes in the time errors. The Cramer-Rao bound (CRB) for the time error estimates is also calculated and compared to Monte Carlo simulations. The estimation method has also been validated on measurements from a real time-interleaved ADC system with 16 ADCs.     

高速ADC及由其构成的并行/交替式数据采集系统的非线性研究

本文研究了高速ADC及由其构成的并行/交替式数据采集系统的DNL(微分非线性)与INL(积分非线性)及有关测试理论与方法.根据统计学方法由单片ADC的DNL和INL导出了并行/交替式数据采集系统的DNL和INL的数学表达式;并且采用统计直方图方法分别对单片ADC和由双片ADC组成的并行/交替式数据采集系统进行了计算机仿真.结果表明,并行/交替式数据采集系统的DNL与INL小于每一通道单片ADC的DNL和INL.     

High power-efficient asynchronous SAR ADC for IoT devices

This paper presents a power-efficient 100-MS/s, 10-bit asynchronous successive approximation register (SAR) ADC. It includes an on-chip reference buffer and the total power dissipation is 6.8 mW. To achieve high performance with high power-efficiency in the proposed ADC, bootstrapped switch, redundancy, set-and-down switching approach, dynamic comparator and dynamic logic techniques are employed. The prototype was fabricated using 65 nm standard CMOS technology. At a 1.2-V supply and 100 MS/s, the ADC achieves an SNDR of 56.2 dB and a SFDR of 65.1 dB. The ADC core consumes only 3.1 mW, resulting in a figure of merit (FOM) of 30.27 fJ/conversionstep and occupies an active area of only 0.009 mm².     

A 10-bit 30-MS/s successive approximation register analog-to-digital converter for low-power sub-sampling applications

A 10-bit 30-MS/s successive approximation register analog-to-digital converter (ADC), which is suitable for low-power sub-sampling applications, is presented. Bootstrapped switches are used to enhance the sampling linearity at the high input frequency. The proposed ADC adopts a binary-weighted split-capacitor array with the energy efficient switching procedure and includes an asynchronous clock scheme to yield more power and speed-efficiency. The ADC is fabricated in a 65 nm complementary metal-oxide-semiconductor technology and occupies an active area of 0.07 mm². The differential and integral nonlinearities of the ADC are less than 0.82 and 1.13 LSB, respectively. The ADC shows a signal-to-noise-distortion ratio of 56.60 dB, a spurious free dynamic range of 73.35 dB, and an effective number of bits (ENOB) of 9.11-bits with a 2.5-MHz sinusoidal input at 30-MS/s. It exhibits higher than 8.86 ENOB for input frequencies up to 78-MHz. The ADC consumes 0.85 mW at a 1.1 V supply and achieves a figure-of-merit of 51 fJ/conversion-step.     

An 8/10 bit 200/100MS/s configurable asynchronous SAR ADC

This paper presents an asynchronous 8/10 bit configurable successive approximation register analog-to-digital converter (ADC). The proposed ADC has two resolution modes and can work at a maximal sampling rate of 200 and 100MS/s for 8 bit mode and 10 bit mode respectively. The ADC uses a custom-designed 1 fF unit capacitor to reduce the power consumption and settling time of capacitive DAC, a dynamic comparator with tail current to minimize kickback noise and improve linearity. Moreover, asynchronous control technique is utilized to implement the ADC in a flexible and energy-efficient way. The proposed ADC is designed in 90 nm CMOS technology. At 100MS/s and 1.0 V supply, the ADC consumes 1.06 mW and offers an ENOB of 9.56 bit for 10 bit mode. When the ADC operates at 8 bit mode, the sampling rate is 200MS/s with 1.56 mW power consumption from 1.0 supply. The resulted ENOB is 7.84 bit. The FOMs for 10 bit mode at 100MS/s and 8 bit mode at 200MS/s are 14 and 34 fJ/conversion-step respectively.     

一种流水线型ADC的时序改进技术研究

对一种流水线型模数转换器(ADC)的时序电路进行了改进研究。改进时序延长了余量增益单元MDAC部分加减保持相位的时长,可以在不增加功耗与面积的情况下,将一种10位流水线型ADC在20 MS/s采样率下的有效位(ENOB)从9.3位提高到9.8位,量化精度提高了5%;将该ADC有效位不低于9.3位的最高采样率从21 MS/s提高到29 MS/s,转换速度提高了35%。ADC的采样频率越高,改进时序带来的效果越显著。该项技术特别适用于高速高精度流水线型ADC,也为其他结构ADC的高速高精度设计提供思路。     

高速高精度流水线ADC的快速仿真方法研究

设计了一种可以与晶体管跨导运算放大器特性高度比拟的运放宏模型.用该宏模型替换采样/保持电路和MDAC模块中的晶体管级放大器电路,进行FFT分析;在仿真结果相差3.2%的情况下,仿真时间为原来的1.7%,大大缩短了流水线ADC的验证周期.在该方法的指导下,设计了一个10位20 MS/s 流水线A/D转换器.在2.3 MHz输入信号下测试,该A/D转换器的ENOB为8.7位,SFDR为73 dBc;当输入信号接近奈奎斯特频率时,ENOB为8.1位.     

An 11b 70-MHz 1.2-mm/sup 2/ 49-mW 0.18-/spl mu/m CMOS ADC with on-chip current/voltage references

This work proposes an 11b 70-MHz CMOS pipelined analog-digital converter (ADC) as one of core circuit blocks for very high speed digital subscriber line system applications. The proposed ADC for the internal use has the strictly limited number of externally connected I/O pins while the ADC employs on-chip CMOS current/voltage references and a merged-capacitor switching technique to improve ADC performances. The ADC implemented in a 0.18-/spl mu/m 1P4M CMOS technology shows the maximum signal-to-noise distortion ratio (SNDR) of 60 dB at 70 MSample/s. The ADC maintains the SNDR of 58 dB and the spurious-free dynamic resistance of 68 dB for input frequencies up to the Nyquist rate at 60 MSample/s. The measured differential and integral nonlinearities of the ADC are within /spl plusmn/0.63 and /spl plusmn/1.21 LSB, respectively. The active chip area is 1.2 mm/sup 2/ and the ADC consumes 49 mW at 70 MSample/s at 1.8 V.     

Blind adaptive equalization of mismatch errors in a time-interleaved A/D converter system

To significantly increase the sampling rate of an A/D converter (ADC), a time-interleaved ADC system is a good option. The drawback of a time-interleaved ADC system is that the ADCs are not exactly identical due to errors in the manufacturing process. This means that time, gain, and offset mismatch errors are introduced in the ADC system. These errors cause distortion in the sampled signal. In this paper, we present a method for estimation and compensation of the mismatch errors. The estimation method requires no knowledge about the input signal except that it should be bandlimited to the Nyquist frequency for the complete ADC system. This means that the errors can be estimated while the ADC is running. The method is also adaptive to slow changes in the mismatch errors. The estimation method has been validated with simulations and measurements from a time-interleaved ADC system.     

一种10bit双通道流水线SAR ADC设计

为了提高模数转换器的采样频率并降低其功耗,提出一种10 bit双通道流水线逐次逼近型（SAR）模数转换器（ADC）。提出的ADC包括两个高速通道,每个通道都采用流水线SAR结构以便低功率和减小面积。考虑到芯片面积、运行速度以及电路复杂性,提出的处于第二阶段的SAR ADC由1 bit FLASH ADC和6 bit SAR ADC组成。提出的ADC由45 nm CMOS工艺制作而成,面积为0.16 mm2。ADC的微分非线性和积分非线性分别小于0.36 最低有效位（LSB）和0.67 LSB。当电源为1.1 V时,ADC的最大运行频率为260 MS/s。运行频率为230 MS/s和260 MS/s的ADC的功率消耗分别为13.9 mW和17.8 mW。     

A 6-b, 4 GSa/s GaAs HBT ADC

A GaAs-AlGaAs heterojunction bipolar transistor (HBT) process was developed to meet the speed, gain, and yield requirements for analog-to-digital converters (ADC's). The HBT has current gain of over 100 and f_T and f_MAX of over 50 GHz. A 6-b, 4 GSa/s (4 giga-samples/s) ADC was designed and fabricated in this process. The ADC uses an analog folding architecture, includes an on-chip master-slave track-and-hold (T/H) circuit, and provides Gray-encoded digital outputs. The ADC achieves 5.6 effective bits at 4 GSa/s, a faster clock rate than any noninterleaved semiconductor ADC reported to date. It has a resolution bandwidth (the frequency at which effective bits has dropped by 0.5 b) of 1.8 GHz at 4 GSa/s, higher than any published ADC. The chip operates at up to 6.5 GSa/s. GaAs HBT IC's are especially prone to high operating temperatures. This led to reliability problems that were overcome by the use of a fast DC thermal simulator written for this project. A SPICE model for self-heating effects is also described     

生化微传感SOC片内嵌入ADC的设计与实现

首先根据生化微传感SOC的应用场合和微传感器的特点,选定CR SARADC作为片内嵌入类型;基于SOC的标准CMOS工艺实现和低功耗的设计目标,分别进行了电容阵列、比较器、开关阵列和SAR控制逻辑等组成单元全定制原理图、版图设计,实现了片内嵌入10位ADC的整体芯片.流片实测结果DNL、INL最大值分别为＋/1.0LSB、＋/-1.5LSB,功耗仅为4.62mW,满足生化微传感SOC数据转换的片内嵌入要求.     

基于功耗优化的流水线ADC研制

提出了一种使流水线模数转换器功耗最优的系统划分方法。采用Matlab进行模拟,以信噪比(SNR)为约束,得出一定精度条件下,流水线ADC各子级分辨率和各级采样电容缩减因子的不同选取组合;又以功耗为约束,从以上多种组合中找到满足最低功耗的流水线ADC结构划分方法。基于以上分析,在SMIC 0.35μm工艺条件下,设计了一个10 bit、采样率20 MS/s的流水线ADC,并流片验证。2.1 MHz输入频率下测试,SFDR=73 dB、ENOB=9.18 bit,模拟部分核心功耗102.3 mW。     

基于Volterra核的ADC非线性校正实现

为了消除非线性误差对模数转换器(ADC)的性能影响,同时提高ADC的精度,采用基于Volterra核的数字后台校正平台,实现了对ADC非线性的校正.完成了Volterra级数高阶核的快速分离与求解,并根据各阶核创建3阶反模型,最终搭建了数字后台校正平台.为了验证后台校正平台的普适性,针对所设计的Flash ADC和流水线ADC的版图后仿真结果进行校正.实验结果表明,2次和3次谐波均得到了较好的抑制,SNDR和SFDR均有不同程度的提高,达到了提高精度的目的.     

A 2.5-V 10-b 120-MSample/s CMOS pipelined ADC based on merged-capacitor switching

This work describes a 10-b multibit-per-stage pipelined CMOS analog-to-digital converter (ADC) incorporating the merged-capacitor switching (MCS) technique. The proposed MCS technique improves the signal processing speed and resolution of the ADC by reducing the required number of unit capacitors by half in comparison to a conventional ADC. The ADC resolution based on the proposed MCS technique can be extended further by employing a commutated feedback-capacitor switching (CFCS) technique. The prototype ADC achieves better than 53-dB signal-to-noise-and-distortion ratio (SNDR) at 120 MSample/s and 54-dB SNDR and 68-dB spurious-free dynamic range (SFDR) for input frequencies up to Nyquist at 100 MSample/s. The measured differential and integral nonlinearities of the prototype are within /spl plusmn/0.40 LSB and /spl plusmn/0.48 LSB, respectively. The ADC fabricated in a 0.25-/spl mu/m CMOS occupies 3.6 mm/sup 2/ of active die area and consumes 208 mW under a 2.5-V power supply.     

A single-channel 8-bit 660 MS/s asynchronous SAR ADC with pre-settling procedure in 65 nm CMOS

A single-channel 8-bit low-power high-speed SAR ADC with a novel pre-settling procedure is presented in this paper. The proposed procedure relaxes the settling time significantly and improves the speed of the ADC. Moreover, the asynchronous technique avoids the high frequency internal clocks and further increases the speed of the SAR ADC. Based on SMIC 65 nm 1.2-V CMOS technology, the simulation results demonstrate that DNL and INL are −0.4/0.4 LSBs and −0.9/0.8 LSBs, respectively. At 660 MS/s sampling rate, the ADC consumes 7.6 mW from a 1.2 V supply. The proposed SAR ADC?s SNDR and SFDR are 49.5 dB and 64.2 dB, respectively.     

8位CMOS双通道流水线ADC仿真设计

设计了一种8位1.2V,1GS/s双通道流水线A/D转换器(ADC)。所设计ADC对1.5位增益D/A转换电路(MDAC)中的流水线双通道结构进行改进,其中设置有双通道流水线时分复用运算放大器和双/单通道快闪式ADC,以简化结构并提高速度;在系统前置采样/保持器中加设由单一时间信号驱动的开关线性化控制(SLC)电路,以解决两条通道之间的采样歪扭和时序失调问题。用90nm标准CMOS工艺对所设计的流水线ADC进行仿真试验,结果表明,室温下所设计ADC的信噪比SNR为32.7dB,无杂散动态范围SFDR为42.3dB,它的分辨率、功耗PD和采样速率SR分别为8位、23mW和1GS/s,从而满足了高速、高精度和低功耗的应用需要。