高分辩率五晶（七晶）X射线衍射仪

高分辩率五晶（七晶）Ｘ射线衍射仪由Ｐｈｉｌｉｐｓ公司开发的高分辩率五晶（七晶）ＭＲＤ型Ｘ射线衍射仪，已在电子部四十四所安装调试完毕，现已投入正常使用。ＭＲＤ五晶Ｘ射线衍射仪，是Ｘ射线源的入射Ｘ射线束，通过两对平行的Ｇｅ（４４０）或Ｇｅ（２２０）单色器...     

掺镉镧钛酸铅纳米晶粉的研究

采用溶胶－凝胶法制备掺镉镧钛酸铅（ＰＣＴ，ＰＣＬＴ）纳米晶，分别用Ｘ射线衍射仪、透射电子显微镜、红外光谱仪和差热扫描量热分析仪对其晶化温度、结构、形貌特性及相变温度进行了分析测试。结果表明，ＰＣＬＴ系列纳米晶的晶化温度为５００°Ｃ，５００°Ｃ～８５０°Ｃ热处理２ｈ得到的纳米晶粉的粒度大小为１５ｎｍ～８０ｎｍ，其铁电－顺电相转变温度为２３５°Ｃ。     

半导陶瓷湿度传感器的组分分析

本文研究一种用ＺｒＯ２，ＳｉＯ２，Ｎｂ２Ｏ５和Ｐ２Ｏ５为原料的半导陶瓷湿度传感器．它的组分是用扫描电子显微镜，Ｘ射线衍射仪和Ｘ射线能谱仪进行分析．几种氧化物粉末在高温下烧结成由许多微小晶粒组成的多孔半导陶瓷．晶粒周围环绕着Ｎｂ（０．２）Ｚｒ（０．８）Ｏ（２．１），ＺｒＮｂ（１４）Ｏ（３２），ＺｒＰ２Ｏ７以及Ｎｂ（４４）Ｐ２Ｏ（１１５）复合物．这些固溶体能够降低晶粒之间的电阻．大气水分子的吸附和毛细凝聚进一步加强了传感器电导．     

BaTiO_3晶相对X7R介质瓷电性能的影响

着重讨论ＢａＴｉＯ３细粉体的晶相对Ｘ７Ｒ介质瓷的电气性能的影响。通过Ｘ射线衍射谱分析该细粉体的晶相结构，结果表明：立方相的ＢａＴｉＯ３介电常数很低；四方相的ＢａＴｉＯ３介电常数高，介质的电性能也好。所以我们用四方相ＢａＴｉＯ３的含量来衡量Ｘ７Ｒ介质瓷的质量。ＢａＴｉＯ３四方相含量越高，Ｘ７Ｒ介质瓷电性能越好。     

电镜硅锂X－射线能谱仪的制备及修理技术

第一套电镜Ｓｉ（Ｌｉ）Ｘ射线探测器已经制成，探测器包括灵敏面积为２０ｍｍ￣２Ｓｉ（Ｌｉ）晶体、低温场效应晶体管、光反馈前置放大器、具有７．５μ铍窗的低温装置和７．５升液氮杜瓦瓶。对￣（５５）Ｆｅ５．９ｋｅＶ射线，能量分辨率为１５２ｅＶ。此外报道ＴＲＡＣＯＲ电镜Ｓｉ（Ｌｉ）Ｘ射线探测器修理的结果，修理后能量分辨率为１４８ｅｖ，与原来的结果一样。每天正常的液氮消耗量少于１立升。     

电镜硅锂X—射线能谱仪的制备及修理技术

第一套电镜Ｘ射线探测器已经制成，探测器包括灵敏面积为２０ｍｍ＾２Ｓｉ（Ｌｉ）晶体、低温场效应晶体管、光反馈前置放大器、具有７．５μ铍窗的低温装置和７．５升液氮杜瓦瓶。对＾５５Ｆｅ５．９ｋｅＶ射线，能量分辨率为１５２ｅｖ。此外报道ＴＲＡＣＯＲ电镜Ｓｉ（Ｌｉ）Ｘ射线探测器修理的结果，修理后能量分辨率为１４８ｅＶ，与原来的结果一样。每天正常的液氮消耗量少于１立升。     

碳钢表面弧光离子渗铝层组织的研究

本文采用加弧辉光离子渗金属技术在碳钢（１０、６０、Ｔ１２）表面进行了弧光离子渗铝，利用扫描电镜（ＳＥＭ）、透射电镜（ＴＥＭ）、Ｘ－射线衍射仪以及Ｘ－射线微束衍射仪，对弧光离子渗铝层的组织进行了测定。     

Sb/Se薄膜的晶化特性研究

对以Ｓｅ为基的非晶半导体材料的应用作以简单的回顾．利用热蒸发的方法制备了单层的Ｓｅ、Ｓｂ膜、含Ｓｂ的Ｓｅ膜以及Ｓｂ／Ｓｅ双层薄膜．利用Ｘ射线衍射技术分析了薄膜退火前后的晶化特性，用光学显微镜观察了薄膜退火前后的表面形貌，发现双层膜表面出现较多的裂纹，从Ｘ射线衍射的结果和材料的热学参数分析了导致这种现象的几种原因     

用X射线双晶及三晶衍射仪测量晶片的研磨和抛光损伤

介绍了用X射线双晶及三晶衍射仪检验半导体晶片研磨及抛光损伤的原理及方法.利用双晶衍射结合腐蚀剥层方法能够定量测定晶片研磨损伤层深度.提出用双晶及三晶衍射方法可以非破坏性地检验晶片的抛光质量,并能比较不同抛光工艺的效果.采用建议的三晶衍射方法检验多种不同晶片时,可以不必更换参考晶片,因而有迅速、方便的优点.     

Pt／Ti爆炸复合双金属界面结构的研究

本工作用透射电镜和Ｘ－射线衍射仪对Ｐｔ／Ｔｉ爆炸复合双金属结合面组织和晶体结构进行了研究。发现界面上有一断续的微晶层，层厚在２μｍ范围内，层内的晶粒大小由几个ｎｍ￣几百个ｎｍ，晶内有层错等晶体缺陷，该层由ＰｔＴｉ、Ｐｔ５Ｔｉ３、ＰｔＴｉ３等合金化合物组成。     

变焦纳米液晶透镜的体三维立体显示器的初步研究

三维(3D)立体显示技术已成为当今一个引人注目的前沿科技领域。本文提出研制基于电动变焦纳米液晶透镜的3D立体显示器。该变焦透镜具有50Hz的高速响应,以达到无闪烁的显示。梯度折射率纳米聚合物分散液晶透镜通过紫外掩模制作,具有透明性好,响应速度快的优点。采用快速阴极射线管作为二维显示器。该体3D立体显示器是一个全新的3D立体显示方案,该显示器的实验工作正在进行中。     

变焦纳米液晶透镜的体三维立体显示器的初步研究

三维(3D)立体显示技术已成为当今一个引人注目的前沿科技领域.本文提出研制基于电动变焦纳米液晶透镜的3D立体显示器.该变焦透镜具有50 Hz的高速响应,以达到无闪烁的显示.梯度折射率纳米聚合物分散液晶透镜通过紫外掩模制作,具有透明性好,响应速度快的优点.采用快速阴极射线管作为二维显示器.该体3D立体显示器是一个全新的3D立体显示方案,该显示器的实验工作正在进行中.     

变焦纳米液晶透镜的体三维立体显示器的初步研究

三维(3D)立体显示技术已成为当今一个引人注目的前沿科技领域.本文提出研制基于电动变焦纳米液晶透镜的3D立体显示器.该变焦透镜具有50 Hz的高速响应,以达到无闪烁的显示.梯度折射率纳米聚合物分散液晶透镜通过紫外掩模制作,具有透明性好,响应速度快的优点.采用快速阴极射线管作为二维显示器.该体3D立体显示器是一个全新的3D立体显示方案,该显示器的实验工作正在进行中.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.