一种12位2 GS/s BiCMOS采样保持电路

基于130 nm BiCMOS工艺,设计了一种12位高速采样保持电路,对电路的主要性能进行了分析。电路采用差分结构,采样开关是开环交换射极跟随开关。在输入信号范围内,缓冲器的线性度较高。采用Cadence Spectre软件进行仿真。结果表明,当采样率为2 GS/s,模拟输入差分信号为992 MHz频率、0.5V_pp幅度的正弦波时,SFDR达75.11 dB,SNDR达73.82 dB,电路功耗仅为98 mW,满足了12位采样保持的要求。     

A 12-bit 200-MS/s pipelined A/D converter with sampling skew reduction technique

This paper presents a 12-bit 200-MS/s dual channel pipeline analog-to-digital converter (ADC). The ADC is featured with a digital timing correction for reducing a sampling skew and the capacitor swapping for suppressing nonlinearities at the first stage in the pipelined ADC. The prototype ADC occupies 0.8×1.4 mm² in a 65-nm CMOS technology. The differential nonlinearity is less than 1.0 least significant bit with a 200 MHz sampling frequency. With a sampling frequency of a 200-MS/s and an input of a 2.4 MHz, the ADC, respectively, achieves a signal to noise-and-distortion ratio and a spurious-free dynamic range of 61.49 dB–70.71 dB while consuming of 112 mW at a supply voltage of 1.1 V.     

一种10位50MHz流水线模数转换器的设计

采用每级1.5 bit和每级2.5 bit相结合的方法设计了一种10位50 MHz流水线模数转换器。通过采用自举开关和增益自举技术的折叠式共源共栅运算放大器,保证了采样保持电路和级电路的性能。该电路采用华润上华(CSMC)0.5μm 5 V CMOS工艺进行版图设计和流片验证,芯片面积为5.5 mm2。测试结果表明:该模数转换器在采样频率为50 MHz,输入信号频率为30 kHz时,信号加谐波失真比(SNDR)为56.5 dB,无杂散动态范围(SFDR)为73.9 dB。输入频率为20 MHz时,信号加谐波失真比为52.1 dB,无杂散动态范围为65.7 dB。     

相位体制数模转换器动态参数的表征与测试

详细分析并讨论了相位体制数模转换器(DAC)动态参数的表征方法,提出用无杂散动态范围(SFDR)、近区谐波失真(TH D 6)、有效工作带宽(EW B)、输出信号功率及正交输出信号幅度一致性来全面描述相位DAC的频域性能。采用上述方法对利用南京电子器件研究所标准76 mm G aA sM ESFET全离子注入工艺流片得到的3b it相位DAC进行了频域测试。结果显示其EW B大于1.5 GH z,转换速率大于12 G bps,全频带内输出信号的正交精度低于4%,幅度一致性低于26%(大多数测试点低于10%)。在500 MH z输入信号下,其SFDR、TH D 6分别为33.8 dB c-、33.7 dB c。该相位DAC的动态参数良好,尤其正交性能优异。     

PDP驱动芯片用RSDS接口电路设计

介绍了一种基于RSDS(减小摆幅差分信号传输)信号传输标准的PDP驱动芯片用接口电路设计,它包括PMOSFET输入CMOS差分放大器和电压源偏置电路.文章重点讨论了PMOSFET输入CMOS差分放大器的差模工作原理及影响其差模增益的因素.Spectre仿真结果表明,本文设计的RSDS接受器电路在输入信号频率为200 MHz的情况下能正常工作,实现了由RSDS信号转换为LVCMOS信号的功能.目前该接口电路已经应用于一款PDP驱动芯片中,作为高速数据传输接口.     

一种带电流源校准的16bit高性能DAC

设计了一种带电流源校准电路的16 bit高速、高分辨率分段电流舵型数模转换器(DAC)。针对电流舵DAC中传统差分开关的缺点,提出了一种优化的四相开关结构。系统分析了输出电流、积分非线性和无杂散动态范围(SFDR)三个重要性能指标对电流舵DAC的电流源单元设计的影响,完成了电流源单元结构和MOS管尺寸的设计。增加了一种优化设计的电流源校准电路以提高DAC的动态性能。基于0.18μm CMOS工艺完成了该DAC的版图设计和工艺加工,其核心部分芯片面积为2.8 mm^2。测试结果表明,在500 MHz采样速率、100 MHz输入信号频率下,测得该DAC的SFDR和三阶互调失真分别约为76和78 dB,动态性能得到明显提升。     

一种基于65 nm CMOS工艺的10位10 MS/s SAR ADC

基于SMIC 65 nm CMOS工艺,设计了一种10位10 MS/s逐次逼近型模数转换器(SAR ADC)。采用全差分的R-C组合式DAC网络结构进行设计,提高了共模噪声抑制能力和转换精度。与全电容结构相比,R-C组合式DAC网络结构有效减小了版图面积。DAC中各开关的导通采用对称的开关时序,使比较器差分输入的共模电平保持为固定值,降低了比较器的失调电压,提高了ADC的线性度。在2.5 V模拟电源电压和1.2 V数字电源电压下,使用Spectre进行仿真验证,测得DNL为0.5 LSB,INL为0.8 LSB;在输入信号频率为4.990 2 MHz,采样频率为10 MHz的条件下,测得电路的有效位数为9.63位,FOM为0.04 pJ/conv。     

一个低电压低功耗10位30MS/s流水线A/D转换器

实现了一个10位精度,30MS/s,1.2V电源电压流水线A/D转换器,通过采用运放共享技术和动态比较器,大大降低了电路的功耗。为了在低电源电压下获得较大的摆幅,设计了一个采用新颖频率补偿方法的两级运放,并深入分析了该运放的频率特性。同时还采用了一个新的偏置电路给运放提供稳定且精确的偏置。在30MHz采样时钟,0.5MHz输入信号下测试,可以得到8.1bit有效位的输出,当输入频率上升到60MHz(四倍奈奎斯特频率)时,仍然有7.9bit有效位。电路积分非线性的最大值为1.98LSB,微分非线性的最大值为0.7LSB。电路采用0.13μmCMOS工艺流片验证,芯片面积为1.12mm2,功耗仅为14.4mW。     

Low-voltage, 10 bit switched-current ADC with 20 MHz inputbandwidth

Fully-differential first-generation switched-current memory cells with common-mode feedforward were used to implement a 1.5 bit/stage pipelined A/D converter in a standard digital CMOS process. The peak effective number of bits (ENOB) for input frequencies over 1 MHz is 7.43, and with a 20 MHz input signal sampled at 3 M sample/s, the measured SFDR and SNDR are 45.1 and 40.8 dB, respectively     

10 GHz full-rate clock and data recovery circuit in 0.18 /spl mu/m CMOS without external reference clock

The design of a fully monolithic integrated 10 GHz full-rate clock and data recovery (CDR) circuit in 0.18 /spl mu/m digital CMOS technology, which employs an injection phase-locked loop (PLL) technique is presented. The CDR operating without the external reference exhibits a capture range of 200 MHz while consuming 205 mA current from 1.8 V supply including the output buffer. The recovered clock signal with 250 mV/sub pp/ pseudorandom bit Sequence input data of length 2/sup 31/-1 exhibits 7.9 ps of peak-to-peak (p-p) and 1.1 ps of root-mean-square (RMS) jitter. The measured clock phase noise at 1 MHz offset is approximately -109 dBc/Hz.     

Microprocessor applications of integer arithmetic

The integer arithmetic technique is introduced via an example taken from digital signal processing. There the technique is implemented on a bit slice microprocessor to calculate scaled values of a quantized input signal Successive solution points are generated within 200 ns of the input signal increments, and there is no accumulation of errors. The technique is extended to the calculation of incremental solutions to polynomials and ordinary differential equations. The extended applications are based on the properties of F space solutions and contour following algorithms. Both are reviewed prior to the discussion of an extended microprocessor application.     

用于高能物理实验电子读出芯片的低噪声锁相环芯片设计

基于TSMC 180 nm工艺设计并流片测试了一款用于高能物理实验的电子读出系统的低噪声、低功耗锁相环芯片。该芯片主要由鉴频鉴相器、电荷泵、环路滤波器、压控振荡器和分频器等子模块组成,在锁相环电荷泵模块中,使用共源共栅电流镜结构精准镜像电流以减小电流失配和用运放钳位电压进一步减小相位噪声。测试结果表明,该锁相环芯片在1.8 V电源电压、输入50 MHz参考时钟条件下,可稳定输出200 MHz的差分时钟信号,时钟均方根抖动为2.26 ps(0.45 mUI),相位噪声在1 MHz频偏处为-105.83 dBc/Hz。芯片整体功耗实测为23.4 mW,锁相环核心功耗为2.02 mW。     

10‐Bit 200‐MS/s Current‐Steering DAC Using Data‐Dependant Current‐Cell Clock‐Gating

This letter proposes a low‐power current‐steering digital‐to‐analog converter (DAC). The proposed DAC reduces the clock power by cutting the clock signal to the current‐source cells in which the data will not be changed. The 10‐bit DAC is implemented using a 0.13‐μm CMOS process with V_DD=1.2 V. Its area is 0.21 mm². It consumes 4.46 mW at a 1‐MHz signal frequency and 200‐MHz sampling rate. The clock power is reduced to 30.9% and 36.2% of a conventional DAC at 1.25‐MHz and 10‐MHz signal frequencies, respectively. The measured spurious free dynamic ranges are 72.8 dB and 56.1 dB at 1‐MHz and 50‐MHz signal frequencies, respectively.     

稳定占空比高速SSTL_2 I/O缓冲器的实现

应对时钟上升沿和下降沿均采集数据的芯片间高速接口,提出了一种输出占空比在50%左右、偏差范围±5%的支持SSTL_2标准的I/O缓冲器.利用互补有源电流镜差动对,实现在不同温度和工艺角下输出信号稳定的占空比偏差范围的输入接收器.为了验证电路实际工作性能,测试芯片在SMIC 0.18 μm 1P6M混合信号工艺下流片.测试结果显示,333 MHz时,输出占空比为47%;200 MHz时,输出占空比为48%;与已报道的支持SSTL_2标准的接收器相比,工作在333 MHz时,输出占空比仍保持在45%到55%间,偏差范围减小约72%.     

10bit 20MS/s流水线模数转换器设计

设计了一个20MHz采样率,10bit精度流水线模数转换器。采用新颖的栅压自举开关,使电路在输入信号频率很高时仍具有良好的动态性能;用MATLAB仿真增益增强型运算放大器在不同反馈因子下闭环零、极点特性,提出了使大信号建立时间最短的主运放、辅助运放单位增益带宽和相位裕度范围。采用SMIC0.35μm2P4M工艺流片验证,20MHz采样率,2.1MHz输入信号下,SFDR=73dBc,ENOB=9.18bit。     

一种基于微分法的峰值检测电路

提出了一种基于微分法的峰值检测电路,它包含微分电路、双沿触发比较器和采样保持电路。微分电路对输入信号进行微分变换,双沿触发比较器比较微分变换结果与参考电压,得到采样保持控制信号,以控制采样保持电路的正常工作,实现峰值检测功能。该检测电路具有高频率、高精度的特点,工作频率达到200~500 MHz,峰值检测误差小于5%。该检测电路适用于高速A/D转换器、D/A转换器和具有复杂参数的采集系统等领域。     

A monolithic video A/D converter

The design and measured performance of a fully parallel monolithic 8-bit A/D converter is reported. The required comparators and combining logic were designed and fabricated with a standard high-performance triple-diffused technology. A bipolar comparator circuit giving good performance with high input impedance is described. Circuit operation is reported at sample rates up to 30 megasamples per second (MS/s), with analog input signal power at frequencies up to 6 MHz. Full 8-bit linearity was achieved. An SNR of 42-44 dB was observed at input signal frequencies up to 5.3 MHz.     

一种基于查找表的移位寄存器链的设计

提出了一种基于查找表的移位寄存器链的设计,以查找表的配置存储单元作为移位模块,以查找表的输入信号作为移位地址选择信号,通过对时钟和写使能的控制进行移位操作。1个查找表最大实现32个时钟周期的移位操作,4个查找表通过配置,可实现4条相互独立的32位移位寄存器链,或首尾级联实现一个128位的移位寄存器链。基于28 nm工艺,对所设计的结构进行了仿真和优化,并对电路进行了多项目晶圆流片。测试结果与仿真匹配良好,实现了32×4和128×1的移位功能,且最高工作频率达到500 MHz,与参考芯片相比,性能提高了10%。     

一种12位100 MS/s流水线ADC的设计

设计了一种12位100 MS/s流水线型模数转换器。采用3.5位/级的无采保前端和运放共享技术以降低功耗;采用首级多位数的结构以降低后级电路的输入参考噪声。采用一种改进型的双输入带电流开关的运放结构,以解决传统运放共享结构所引起的记忆效应和级间串扰问题。在TSMC 90 nm工艺下,采用Cadence Spectre进行仿真验证,当采样时钟频率为100 MS/s,输入信号频率为9.277 34 MHz时,信干噪比(SNDR)为71.58 dB,无杂散动态范围(SFDR)为86.32 dB,电路整体功耗为220.8 mW。     

Polynomial 2.1 GHz RF predistorter IC with envelope injection output

This paper presents the structure, test setup and measured results of a polynomial RF predistorter IC fabricated in a 0.35 μm SiGe BiCMOS process. The predistorter is designed for the base station WCDMA band at 2.1 GHz. The predistortion signal is generated by a 5th-degree complex polynomial. Also a squared envelope is generated that can be used as a baseband injection signal to cancel 2nd-order distortion that typically causes memory effects. The performance of the predistorter was measured by driving a three-stage discrete power amplifier chain by a 2-tone test and a 3.84 MHz wide 3GPP WCDMA modulated signal. The 2-tone test showed more than 20 dB IM3 cancellation and the WCDMA signal’s ACPR was improved by 8 dB.