一种高线性度低失真跨导运算放大器的设计

为了解决线性跨导输入范围有限的问题,提出了一种具有宽线性输入范围的高线性运算跨导放大器(Operational Transconductance Amplifier,OTA),可有效适用于包括低频连续时间滤波器在内的电流模式电路。该OTA利用源极退化和辅助差分结构,通过减少失真分量来显著增加线性范围。此外还利用该OTA实现了一种二阶全差分滤波器;采用SCL180 nm CMOS工艺进行了设计和仿真。实验结果表明,相比于其他设计方法,该OTA和滤波器具有更宽的线性范围和更低的失真。对于1 MHz信号频率、600 mVP-P的输入,该OTA的三次谐波失真分量和互调失真分量分别为-74.8 dB和-76.1 dB,线性范围为0.9V(1%跨导变化)。对于300 mVP-P、10 kHz输入,该滤波器的三次谐波失真分量和互调失真分量分别为-69.75 dB和-65.2 dB。     

基于生物应用的低截止频率5阶Gm-C低通滤波器

设计了一款基于生物应用的截止频率为38.49 Hz的5阶跨导电容(Gm-C)低通滤波器.首先利用电流互抵技术设计实现了一款低Gm的运算跨导放大器(OTA),并基于此OTA,采用无源电感电容(LC)网络模拟法设计了一款5阶椭圆滤波器.最后基于华虹宏力0.35 μmCD350 60 V/80 V工艺应用Spectre仿真工具对滤波器进行仿真.结果表明,所设计的低通滤波器可以实现非常陡峭的过渡带,并在50 Hz工频信号处衰减达-43.812 dB;阻带衰减为-33.18 dB;通带内平均噪声为352.0 μV·Hz-1/2;总谐波失真为-56.24 dB;3.3 V电源电压下,5阶滤波器总功耗仅为11.73 μW.所设计的滤波器可以有效采集频率极低的生物信号并且滤除干扰信号.芯片面积为1 200 μm×728.μm.     

用于ECG的低通带衰减OTA-C滤波器设计

以心电图(ECG)检测为应用背景,采用电流互抵技术和线性区晶体管偏置结构设计了一种超低跨导、高线性度的跨导运算放大器(OTA),其跨导达到了nA/V量级。在此基础上,根据信号传输函数搭建了一个4阶低通滤波器电路模型,其截止频率为250 Hz,通带衰减为0.4 dB,带内平均噪声为90.53 μV(rms)·Hz-1/2,在ECG应用中拥有67 dB的动态范围(THD≤1%)。使用Cadence Spectre软件进行仿真和调试,最后进行版图设计并流片。在不包括静电结构和压焊点的情况下,芯片版图面积为0.027 mm²。电路供电电压为1.8 V,具有很高的集成度,能应用于便携式ECG集成电路中。     

一种基于Gm-C的高Q值模拟中频带通滤波器设计与实现

设计并实现了一种基于Gm-C二次节(Biquad)结构的6阶切比雪夫Ⅰ型模拟中频带通滤波器,中心频率为46MHz,带宽为2.046MHz.其中Biquad结构中加入了负阻抗单元,增加输出阻抗,实现滤波器的高Q值(品质因数).跨导放大器(Operational transconductance amplifier,OTA)单元使用源极负反馈技术,优化了OTA的线性性能.整个滤波器电路采用0.35μm CMOS工艺实现.经过仿真验证,滤波器的通带纹波是2.704dB,1.5倍带宽处衰减大于21dB.在3.3V电源电压情况下,滤波器的总电流消耗为8.87mA.     

一种适用于心电信号检测的高阶连续时间OTA-C滤波器设计

提出一种适合心电信号（ECG）检测的OTA-C滤波器。为了达到低功耗、低截止频率、高直流增益、高阻带衰减、低谐波失真的目的,滤波器采用五阶巴特沃斯全差分低通滤波结构和高增益的两级单端输出OTA,其中OTA电路采用亚阈值区驱动、电流分流和源极负反馈等技术。采用SMIC 0.18-μm 1P6M CMOS工艺进行电路、版图设计及优化。仿真结果表明,滤波器在静态功耗为17.6 μW,截止频率为240 Hz,直流增益为-6 dB,阻带衰减为120 dB每十倍频,三次谐波失真小于-62 dB@ 400 mV,适合应用于心电信号检测模拟前端。     

高线性满摆幅输入度跨导器及其在g_m-C带阻滤波器中的应用

介绍了一种利用MOS管线性区特性实现满摆幅输入的跨导器.通过分析电路中MOS管的二阶效应,利用差分放大器以负反馈形式接入偏置和输出端并联电流源的方法,对电路进行了结构优化,提高了电路的线性度,并降低了输出失调电流.模拟结果表明:跨导器总谐波失真可达到-59.2dB,输出失调电流136nA.用该跨导器组成的gm-C带阻滤波器工作在50Hz的中心频率时,陷波带宽33Hz,陷波深度-39.6dB,可应用于滤除信号中的50Hz市电干扰.     

一种应用于LTE直接变频无声表滤波器接收机的1.2-V CMOS前端设计

本文提出了一种应用于LTE直接变频接收机的CMOS射频前端电路。电路由低噪声跨导放大器（LNA）,电流型无源混频器和跨阻运算放大器（TIA）组成,该结构对于LTE多频带应用具有高集成,高线性,并实现简单的频率配置。电路采用多个电流舵跨导级实现了大的可变增益控制范围。电流型无源混频器采用25%占空比本振改善了电路增益、噪声和线性性能。为了抑制带外干扰,采用直接耦合电流输入滤波器。该射频前端电路采用0.13-μm CMOS工艺设计制造。测试结果表明电路在2.3GHz到2.7GHz工作频率范围,具有45dB电压转换增益,噪声系数为2.7dB,IIP3为-7dBm以及校准后的IIP2为 60dBm。电路采用1.2V单电压供电,整个电路工作电流为40mA。     

应用于直接变频架构直播卫星调谐器中的具有宽调谐范围的连续时间低通滤波器

本文用0.35微米锗硅BiCMOS工艺设计了七阶巴特沃兹跨导电容低通滤波器及其片上自动调谐电路,该低通滤波器适用于采用直接变频架构的直播卫星调谐器。该滤波器的-3dB带宽截止频率具有从4MHz到40MHz的宽调谐范围。成功实现了一种新颖的片上自动调谐方案,用来调谐和锁定滤波器的-3dB带宽截止频率。测试结果表明,该滤波器具有-0.5dB的通带电压增益,+/- 5%的带宽精度,30nV/Hz1/2的等效输入噪声,-3dBVrms 通带电压三阶交调点,27dBVrms 阻带电压三阶交调点。I/Q正交两路滤波器及其调谐电路采用5V电源,在滤波器的-3dB带宽截止频率为20MHz的情况下,消耗电流13毫安,占用芯片面积0.5mm2。     

强噪声背景下的弱信号检测仿真

针对被噪声淹没的弱信号的检测提出一种基于数字锁定放大器（LIA）的实现方案,该方案将弱信号检测中的数字式平均原理应用于锁定放大器中的滤波器设计,传统的滤波器相比,该滤波器具有结构简单、通带易于调整控制的优点。以检测传感器电路中的弱电压信号为基础建立检测仿真系统,并以Matlab为平台,对方案抑制宽带噪声和单频噪声的性能进行了仿真分析,可以看到,本方案取得了较好的抑制噪声的能力,对于两种不同的噪声污染,当输入信噪比分别为-23dB和-60dB时仍可较精确地检测出淹没在噪声中的弱信号幅度。     

一种改善CMOSOTA线性度的实现电路

为了满足低电压、低功耗跨导放大器-电容(OTA-C)连续时间型高频模拟集成滤波器结构中,跨导放大器(ITA)对线性度的要求,基于交叉耦合差分对MOS管结构中典型OTA电路的非线性特性进行研究,得到其非线性失真项.据此,提出一种基于前馈线性化原理改善OTA线性度的实现电路,给出线性化处理前后OTA传输特性的对比曲线.结果表明,通过改变结构,提高了OTA的线性度.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.