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1.
薄膜声体波谐振器(FBAR)技术以其频率高,品质因数(Q)高,插入损耗低,与半导体集成电路(IC)工艺兼容等优良特性在无线通信领域获得了广泛应用。基于FBAR技术的传感器具有灵敏度高,体积小,线性度好及易于集成等特点,符合目前传感器的微型化、智能化、信息化的主流发展趋势。该文对FBAR传感器的研究现状、发展动向等方面进行了总结并对石英晶体微天平(QCM)、声表面波(SAW)和FBAR这几种声波质量传感器进行了比较。最后对FBAR传感器技术作了简要评述并讨论了FBAR传感器未来的发展趋势。  相似文献   

2.
薄膜体声波谐振器(FBAR)具有高灵敏度、高工作频率,低功耗,小尺寸及制造工艺IC兼容的特点,使其成为高效能换能器和传感器的理想技术。基于FBAR的传感器,如高灵敏度质量传感器、DNA和蛋白质探测器、气体传感器、水银离子探测器和微区质量探测器,与采用其他微电子机械系统的同类传感器相比,已取得了更好的传感性能。该文综述了FBAR传感器的进展,特别是FBAR高灵敏度传感器、FBAR谐振式传感器及其高频读出电路;提出了采用六端口反射计实现FBAR换能器的射频频率偏移信号读出、基于单片微波集成电路或低温共烧陶瓷工艺制备的六端口网络构建集成FBAR传感器的原创设想。  相似文献   

3.
研究了由硅微质量块-悬臂梁惯性力敏结构和氮化铝(AlN)薄膜体声波谐振器(FBAR)检测元件集成的FBAR微加速度计表头的惯性力敏特性。采用有限元(FEA)静力学仿真,得到惯性力载荷作用下硅微悬臂梁上的应力分布;选取最大应力值作为载荷,基于第一性原理计算纤锌矿AlN的弹性系数与应力的关系式,预测惯性力载荷作用下AlN弹性系数的最大变化量;采用谐响应分析,预测FBAR微加速度计的加速度-谐振频率偏移特性。分析得到:惯性力载荷作用下,FBAR微加速度计的谐振频率向高频偏移,灵敏度约为数kHz/g;其加速度增量-谐振频率偏移特性曲线具有良好的线性度。  相似文献   

4.
讨论了微悬臂生化传感器在动态模式下的工作原理,针对在液体环境中阻尼增大、微悬臂共振品质因素下降的问题,设计了一个正反馈电路,使得微悬臂在液体中能够稳定在其固有频率上自激振荡.从而简便地测出微悬臂传感器在吸附分析物之后的频率变化.实验中将黄金Au溅射于微悬臂上,每次溅射的厚度为1nm,等效质量约为0.042 72 ng,溅射12次,测得去离子水中微悬臂的频率随溅射的Au质量的增加,约以-10.089 Hz/,pg的线性趋势下降,微悬臂对附加质量的检测分辨率提高了约200倍,达到1 pg.  相似文献   

5.
固体装配型薄膜体声波谐振器(FBAR)机械强度好,尺寸小,可在硅片上三维立体集成,灵敏度大,在未来的通信设备制作高带通滤波器和物联网传感器中展现出广泛的应用前景。通过射频磁控溅射系统制备了以掺镁ZnO(MgxZn1-xO)作为压电层的固体装配型薄膜体声波谐振器,研究了掺镁ZnO对薄膜体声波谐振器谐振性能的影响。利用场发射扫描电镜(FESEM)对FBAR的结构进行了微观表征。比较了不同掺镁ZnO靶材对于晶向和谐振性能的影响。通过优化条件,制备出了性能优越的FBAR,其谐振频率在1.8~2.4GHz,品质因数(Q)可达800,回波损耗可达-30dB。  相似文献   

6.
提出了一种易于使用的薄膜体声波(FBAR)滤波器的4步设计方法,以一种FDD-LTE Band7的Rx滤波器为例展示了该方法的应用流程。第一步,根据FBAR滤波器的中心频率和带宽指标,确定FBAR薄膜叠层中各层薄膜的厚度。第二步,得到滤波器的电路结构。第三步,得到每个FBAR单元的谐振区面积;为此,将串联FBAR单元的谐振区面积、并联FBAR单元与串联FBAR单元的谐振区面积比值作为两组优化参数;将给定滤波器的插入损耗和带外抑制指标作为优化目标,利用ADS软件中的梯度优化算法,得到其优化值。第四步,旨在使滤波器的带内纹波最小化。设计中采用一种新的FBAR电极厚度调整方法,故意使串联FBAR的串联谐振频率与并联FBAR的并联谐振频率频率值不等,但相差很小,实现了该目标。由于案例设计结果中,SiO2支撑层的厚度仅300nm,需要在背面通孔刻蚀的微加工工艺中工序保留良好,因此,提出了一种基于绝缘衬底上的Si(SOI)圆片中埋氧层(BOX)缓冲的两步通孔刻蚀工艺方案,该方法利用了BOX的刻蚀自停止特性。研究结果表明,Rx滤波器插入损耗为0.6dB,在Tx频段的带外抑制为40.4dB,带内纹波为0.4dB。由此验证了该设计方法的可行性。  相似文献   

7.
针对磁性液体在MEMS微致动器中的应用,对磁性液体在磁场中致动力的影响因素进行了理论分析。根据理论分析结果设计了一套磁性液体微致动性能测试实验台,并从磁场强度、磁性液体受力面积和磁性液体质量三个方面对其微致动性能进行实验研究。实验结果表明:磁性液体致动力与磁场强度近似呈线性关系;等量磁性液体作用面积越大,致动力越大;磁性液体致动力随磁性液体质量的增加不断增加,当磁性液体质量达到一定值时,磁性液体致动力大小趋于稳定。  相似文献   

8.
该文研制了一种晶圆级封装(WLP)的C波段薄膜体声波谐振器(FBAR)滤波器.采用一维Mason等效电路模型对谐振器进行设计,并使用H FSS对电磁封装模型进行优化,再在ADS中对滤波器进行仿真优化设计,得到阶梯型结构的FBAR滤波器.采用空腔型结构并制备出FBAR滤波器芯片,同时利用覆膜工艺对FBAR裸芯片进行覆膜和...  相似文献   

9.
薄膜体声波谐振器(FBAR)是优良的射频频率器件.用基本Mason模型对FBAR器件进行建模,并分析阐述了FBAR射频滤波器的结构和设计方法.在此模型和设计方法基础上,对多输入多输出(MIMO)的1900MHz个人通信服务(PCS)频段和800 MHz蜂窝(Cellular)频段终端的FBAR射频多工滤波器进行了设计和性能分析.滤波器用ADS软件进行仿真和优化,仿真结果表明,本设计比Avago公司主流产品ACFM-7101性能要好,特别是带内纹波.  相似文献   

10.
针对传统FBAR(Film Buck Acoustic Resonator)制备困难、成品率低的问题,提出一种新型FBAR结构(SU8-FBAR)。利用高分子聚合物材料SU8薄膜代替传统FBAR的支撑层和声波限制结构,增加了FBAR器件的机械强度,且易于制备,成品率较高。采用AlN作压电薄膜,分别以Mo、Pt、CNT、Al作为电极,利用Comsol Multiphysics仿真软件对SU8-FBAR的结构参数进行仿真优化。结果显示,当电极材料为CNT、上电极厚度为0.1μm、SU8薄膜厚度为5μm时,SU8-FBAR的综合性能最优:SU8-FBAR的品质因数(Q)值达到1210,几乎为传统FBAR Q值的3倍;机电耦合系数为0.063,高于传统FBAR的0.0425。该器件能检测到极小谐振频率的变化,可用于微生物传感领域。  相似文献   

11.
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.  相似文献   

12.
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.  相似文献   

13.
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.  相似文献   

14.
本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。  相似文献   

15.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

16.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

17.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.  相似文献   

18.
Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.  相似文献   

19.
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.  相似文献   

20.
It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer (LDV).  相似文献   

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