溅射功率对PET衬底上ZnO:Zr薄膜性能的影响

采用直流磁控溅射法在室温下柔性PET衬底上制备出了高质量的掺锆氧化锌(ZnO:Zr)透明导电薄膜。研究了溅射功率对ZnO:Zr薄膜表面形貌、结构、电学和光学性能的影响。溅射功率对ZnO:Zr薄膜的电阻率影响显著:当溅射功率从60W增加到90W时,薄膜的电阻率先减小后增大,在最佳功率80W时,电阻率具有最小值3.67×10-3Ω·cm。所制备的ZnO:Zr薄膜具有良好的附着性能,在可见光区平均透射率高达90%。     

铝钛共掺杂氧化锌透明导电薄膜的制备与性能研究

用直流磁控溅射法在玻璃衬底上成功制备出了铝钛共掺杂氧化锌(TAZO)透明导电薄膜,研究了溅射压强对TAZO薄膜的微观结构和光电特性的影响。研究结果表明,所制备的TAZO薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向。当溅射压强为7.5Pa时,薄膜的最小电阻率为3.34×10-4Ω.cm。薄膜的可见光区平均透过率大于89%。溅射压强对薄膜的电阻率和微观结构有显著影响。     

溅射压强对钛镓共掺杂氧化锌透明导电薄膜性能的影响

利用直流磁控溅射工艺在玻璃衬底上制备出了透过率高、电阻率较低的钛镓共掺杂氧化锌透明导电薄膜(TGZO)。研究了溅射压强对TGZO薄膜结构、形貌和光电性能的影响。研究结果表明,溅射压强对TGZO薄膜的结构和电阻率有重要影响。X射线衍射(XRD)表明,TGZO薄膜为具有c轴择优取向的六角纤锌矿结构多晶薄膜。薄膜的电阻率具有随着溅射压强的增大先减小,后增大的规律,在溅射压强为11Pa时,实验获得的TGZO薄膜晶格畸变最小,电阻率具有最小值1.48×10-4Ω.cm,透过率具有最大值94.3%。实验制备的TGZO薄膜附着性能良好,在400～760nm波长范围内的平均透过率都高于90%。     

溅射压强对直流磁控溅射制备ZnO:Ga透明导电薄膜特性的影响

通过直流反应磁控溅射法在玻璃衬底上制备了掺镓ZnO(ZnO:Ga)透明导电薄膜,研究了溅射压强对ZnO:Ga透明导电薄膜结构、形貌和电光学性能的影响.X射线衍射结果表明,所制备的ZnO:Ga薄膜具有C轴择优取向的六角多晶结构.SEM测试表明,ZnO:Ga薄膜的形貌强烈依赖于沉积压强的变化.沉积的ZnO:Ga薄膜最低电阻率可达4.48×10-4Ω·cm,在可见光范围内平均透射率超过90%.     

射频磁控溅射法制备掺锆氧化锌透明导电薄膜

利用射频磁控溅射法在室温下制备出了掺锆氧化锌(ZnO∶Zr)透明导电薄膜。研究了溅射压强对ZnO∶Zr薄膜表面形貌、结构、光学和电学性能的影响。结果表明:ZnO∶Zr薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向,溅射压强对薄膜电阻率有显著影响,压强为1.5Pa时,电阻率具有最小值1.77×10–3Ω·cm。所制备的ZnO∶Zr薄膜具有良好的附着性能,在可见光区平均透过率超过93%。     

溅射压强对直流磁控溅射制备ZnO:Ga透明导电薄膜特性的影响

通过直流反应磁控溅射法在玻璃衬底上制备了掺镓ZnO(ZnO:Ga)透明导电薄膜,研究了溅射压强对ZnO:Ga透明导电薄膜结构、形貌和电光学性能的影响.X射线衍射结果表明,所制备的ZnO:Ga薄膜具有C轴择优取向的六角多晶结构.SEM测试表明,ZnO:Ga薄膜的形貌强烈依赖于沉积压强的变化.沉积的ZnO:Ga薄膜最低电阻率可达4.48×10-4Ω·cm,在可见光范围内平均透射率超过90%.     

直流磁控溅射法制备ZnO:W透明导电薄膜及其性能表征

利用直流磁控溅射法成功地在室温玻璃衬底上制备出了电阻率低、透光率高的掺钨氧化锌（ZnO:W）透明导电薄膜。沉积压强在12-21 Pa之间变化。X射线衍射结果表明实验制备的ZnO:W为六方纤锌矿结构的多晶薄膜,具有垂直于衬底方向的c轴择优取向。沉积压强对ZnO:W薄膜的晶化程度、形貌和电阻率有很大影响,而对其透光率和光学带隙及折射率影响不大。当沉积压强为21 Pa,溅射功率为130 W时,所制备薄膜的电阻率达到最小值1.5×10-4 Ω·cm,其方块电阻、可见光透过率分别为6.8 Ω/□和91.3%。     

掺钛氧化锌透明导电薄膜的制备及特性研究

利用直流磁控溅射法在室温水冷玻璃衬底上成功地制备出了掺钛氧化锌(ZnO:Ti)透明导电薄膜.研究了靶衬间距对ZnO:Ti薄膜结构、形貌和光电性能的影响.研究结果表明,靶衬间距对ZnO:Ti薄膜的结构和电阻率有显著影响.X射线衍射(XRD)表明,ZnO:Ti薄膜为六角纤锌矿结构的多晶薄膜,且具有c轴择优取向.在靶衬间距为4.6 cm时,实验获得的ZnO:Ti薄膜电阻率具有最小值4.18×10-4Ω·cm.实验制备的ZnO:Ti薄膜具有良好的附着性能,可见光区平均透过率超过92%.ZnO:Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极.     

在柔性衬底上制备透明导电薄膜ZnO:Zr(英文)

采用射频磁控溅射法在室温柔性衬底PET上制备了掺锆氧化锌(ZZO)透明导电薄膜.利用不同方法提高了ZZO薄膜的电阻率而未使其可见光透过率降低.X射线衍射(XRD)和扫描电子显微镜(SEM)表明,ZZO薄膜为六角纤锌矿结构的多晶薄膜.在有机衬底和玻璃衬底上制备ZZO薄膜的择优取向不同,前者为(100)晶面,而后者为(002)晶面.在有ZnO缓冲层的PET衬底上制备的ZZO薄膜电阻率比直接生长在玻璃衬底样品上的小.通过优化参数,在PET衬底上制备出了最小电阻率为1.7×10-3Ω·cm、可见光透过率超过93%的ZZO薄膜.实验表明,镀膜之前在柔性衬底上沉积ZnO缓冲层能有效地提高ZZO薄膜的质量.     

掺锆氧化锌透明导电薄膜的制备及特性研究

利用射频磁控溅射法在室温水冷玻璃衬底上成功地制备出了掺锆氧化锌(ZnO:Zr)透明导电薄膜.研究了溅射功率对ZnO:Zr薄膜结构、形貌和光电性能的影响.研究结果表明,溅射功率对ZnO:Zr薄膜的结构和电阻率有显著影响.X射线衍射(XRD)表明,ZnO:Zr薄膜为六角纤锌矿结构的多晶薄膜,且具有C轴择优取向.在溅射功率为150 W时,实验获得的ZnO:Zr薄膜电阻率具有最小值3.8×10-3Ω·cm.实验制备的ZnO:Zr薄膜具有良好的附着性能,可见光区平均透过率超过92%.ZnO:Zr薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极.     

Influence of the sputtering pressure on the properties of transparent conducting zirconium-doped zinc oxide films prepared by RF magnetron sputtering

Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low re-sistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electri-cal resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.     

Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Tungsten-doped zinc oxide（ZnO:W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^-4Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.     

溅射压强对磁控溅射法制备的ZnO:Zr透明导电薄膜性能的影响

Transparent conducting zirconium-doped zinc oxide films with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by radio frequency magnetron sputtering at room temperature. The Ar sputtering pressure was varied from 0.5 to 3 Pa. The crystallinity increases and the electrical resistivity decreases when the sputtering pressure increases from 0.5 to 2.5 Pa. The cystallinity decreases and the electrical resistivity increases when the sputtering pressure increases from 2.5 to 3 Pa. When the sputtering pressure is 2.5 Pa, it is obtained that the lowest resistivity is 2.03 x 10^-3Ω .cm with a very high transmittance of above 94%. The deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate.     

缓冲层厚度对透明导电薄膜ZnO:Zr性能的影响

利用直流磁控溅射法在有ZnO:Zr缓冲层的水冷玻璃衬底上成功制备出了ZnO:Zr透明导电薄膜,缓冲层的厚度介于35～208 nm.利用XRD、SEM、四探针测试仪和紫外-可见分光光度计研究ZnO:Zr薄膜的结构、形貌、电光性能.结果表明,薄膜的颗粒尺寸和电阻率对缓冲层厚度具有较强的依赖性.当缓冲层厚度从35 nm增加到103 nm时,薄膜的颗粒尺寸增大,电阻率减小.而当缓冲层厚度从103 nm增加到208 nm时,薄膜的颗粒尺寸减小,电阻率增大.当缓冲厚度为103 nm时,薄膜的电阻率最小为2.96×10-3 Ω·cm,远小于没有缓冲层时的12.9×10-3 Ω·cm.实验结果表明,在沉积薄膜之前先沉积一层适当的缓冲层是提高ZnO:Zr薄膜质量的一种有效方法.     

透明导电薄膜ZnO:Zr的反应磁控溅射法制备及表征

以Zn金属靶和Zr金属片组成的Zn:Zr为靶材,利用直流反应磁控溅射法在玻璃衬底上制备ZnO:Zr透明导电薄膜。研究了靶与衬底之间的距离对所制备薄膜结构和性能的影响。实验制备的ZnO:Zr薄膜为六方纤锌矿结构的多晶薄膜,且具有与衬底方向垂直的c轴择优取向。实验结果表明,靶与衬底之间的距离对ZnO:Zr薄膜的结构、生长速率、密度及电学性能有很大影响。靶与衬底之间的最佳距离为6.0cm,在此条件下制备的ZnO:Zr薄膜具有最小电阻率1.78×10-3Ω.cm,其可见光透过率为88.5%,折射率为2.04。     

ZnO∶Ti透明导电薄膜的制备与光电性能研究

采用直流磁控溅射法,在水冷7059玻璃衬底上制备了具有高透射率和相对低电阻率的掺钛氧化锌(ZnO∶Ti)透明导电薄膜,研究了溅射偏压对ZnO∶Ti薄膜结构、形貌和光电性能的影响。结果表明,ZnO∶Ti薄膜为六角纤锌矿多晶结构,具有c轴择优取向。溅射偏压对ZnO∶Ti薄膜的结构和电阻率有重要影响。当溅射偏压为10V时,电阻率具有最小值1.90×10–4?.cm。薄膜具有良好的附着性能,可见光区平均透射率超过90%。该ZnO∶Ti薄膜可以用作薄膜太阳能电池和液晶显示器的透明电极。     

Thickness dependence of the properties of transparent conducting ZnO:Zr films deposited on flexible substrates by RF magnetron sputtering

Transparent conducting zirconium-doped zinc oxide(ZnO:Zr)thin films with high transparency,low resistivity and good adhesion were successfully prepared on water-cooled flexible substrates(polyethylene glycol terephthalate,PET)by RF magnetron sputtering.The structural,electrical and optical prooerties of the films were studied for different thicknesses in detail.X-ray diffraction(XRD)and scanning electron microscopy(SEM)revealed that all the deposited films are polycrystalline with a hexagonal structure and a preferred orientation perpendicular to the substrate．The lowest resistivity achieved is 1.55×10-3 Ω·cm for a thickness of 189 nm with a Hall mobility of 17.6cm2/(V·s)and a carrier concentration of 2.15×1020cm-3.All the films present a high transmittance of above 90％in the wavelength range of the visible spectrum.