反熔丝FPGA配置电路的研究

反熔丝FPGA的编程过程是对可编程逻辑模块进行配置的过程,具体过程是利用配置电路对连接在逻辑模块输入、输出端口的反熔丝单元施加高压,将其击穿形成连接通路,从而使得逻辑模块连接在信号线上.位流数据控制配置电路完成反熔丝单元的预充电、寻址、加压以及编程过程.通过控制晶体管的打开和关断及复用编程通道,可以实现不同类型反熔丝的编程,并简化配置电路的设计规模.测试结果表明,配置电路可靠地完成了反熔丝的编程功能.     

Actel的Axcelerator FPGA获BP Microsystems选用作为第7代编程器的核心控制器

BP Microsystems公司是器件编程的业务领袖，现决定在其全线下一代编程解决方案中选用Actel公司以反熔丝为基础的单芯片Axcelerator FPGA来提高产品的速度、降低功耗及增加安全性。BP Microsystems将把Actel以反熔丝为基础的AX1000器件作为所有第7代工程、多点和自动编程器主板的核心控制器，全面发挥Actel反熔丝技术的优势，大幅提升其行业领先产品的整体性能。     

用于反熔丝FPGA的内建测试电路北大核心CSCD

由于反熔丝器件的一次可编程特性,反熔丝现场可编程门阵列(FPGA)在生产阶段很难完成对电路的功能测试验证。针对反熔丝FPGA典型的结构及其内部可编程逻辑模块(PLM)结构,分析了在编程前对PLM进行全功能测试的方法。设计了内建测试电路结构,用于内部PLM逻辑功能的测试。给出了内建测试电路的寻址寄存器、赋值寄存器以及检测电路的结构设计,电路在1.0μm双层多晶双层金属(2P2M)氧化层-氮化物-氧化层(ONO)反熔丝工艺上成功流片。测试结果表明,电路设计正确,解决了在芯片编程前完成基于反熔丝的一次可编程FPGA的内部PLM逻辑功能测试的难题,为后期研究反熔丝电路奠定了基础。     

基于非晶态铌酸锌铋薄膜的新型反熔丝器件

本文提出了一种基于非晶态铌酸锌铋（a-BZN）介质材料的新型反熔丝器件并对其性能特征进行了研究。考察了a-BZN反熔丝器件的关态特性,选用从上至下的编程方向对反熔丝器件进行击穿,其击穿电压约为6.56V。获得了a-BZN反熔丝器件的关态电阻,约为1GΩ。表征分析了击穿后的a-BZN反熔丝器件的表面形貌。研究了a-BZN反熔丝器件的编程特性以及编程后的开态特性,结果表明a-BZN反熔丝器件所需编程时间约为0.46ms,编程后其开态电阻约为26.1Ω。对比分析了a-BZN反熔丝器件与结晶态铌酸锌铋（cp-BZN）反熔丝器件和栅氧反熔丝器件在性能特征等方面的差异。     

用于反熔丝FPGA的多标准IO接口电路

针对高可靠性领域和复杂环境对大规模反熔丝FPGA器件的迫切需求,设计了一种新的用于反熔丝FPGA的可动态配置IO接口电路。该IO接口电路具有宽的输入输出电压范围,能实现多驱动调节,支持一系列不同电平模式。通过对反熔丝单元进行编程配置,该IO接口电路可兼容多种IO标准,内核电压为2.5 V,端口电压可在3.3 V与5 V之间转换。仿真与测试结果表明,该IO接口电路满足设计要求,接口速度优于国外同类产品。     

单次可编程金属-分子-金属器件

提出了一种单次可编程的金属-分子-金属器件.该器件利用一种经过改良的Rotaxane LB膜作为功能层.可以和应用于场编程门阵列电路中的无机反熔丝器件相比拟,将在有机可编程电路和容错电路等方面有较广泛的应用.所有的加工工艺都是低温工艺,使得该器件可以和其他有机器件集成.电学测试表明该器件有良好的单次编程能力,其击穿电压为2.2V,关态电阻为15kΩ,而开态电阻为54Ω.据分析,这一特性是由非对称的电极结构和金属原子在高电场作用下穿透了分子薄膜所造成的.     

单次可编程金属-分子-金属器件

提出了一种单次可编程的金属-分子-金属器件. 该器件利用一种经过改良的Rotaxane LB膜作为功能层,可以和应用于场编程门阵列电路中的无机反熔丝器件相比拟,将在有机可编程电路和容错电路等方面有较广泛的应用. 所有的加工工艺都是低温工艺,使得该器件可以和其他有机器件集成. 电学测试表明该器件有良好的单次编程能力,其击穿电压为2.2V,关态电阻为15kΩ,而开态电阻为54Ω. 据分析,这一特性是由非对称的电极结构和金属原子在高电场作用下穿透了分子薄膜所造成的.     

抗辐照波控单元设计与实现

在复杂的空间电磁环境下,电路受宇宙射线、单粒子的影响较大,因此器件的可靠性至关重要。反熔丝现场可编程门阵列(FPGA)是以反熔丝为基本编程结构的一次性可编程器件,编程后状态不可翻转,具有非易失性、高保密性、高可靠性、抗辐照等优势,非常适用于航天航空等领域。本文给出一种基于国产反熔丝FPGA(RS422)的抗辐照波控单元设计方案,以国产反熔丝FPGA芯片为核心,给出系统电路的工作原理、实现框图,解决空间电磁环境下雷达阵面控制问题,并进行了相关实验。实验结果表明,在5 MHz波特率下,RS422传输延迟小于码元周期,且对144单元移相组件的布相时间小于500 μs,达到设计指标要求。     

应用于OTP单元的高可靠性MTM反熔丝特性

主要研究了一种新型MTM反熔丝结构的电特性,未编程反熔丝漏电和击穿以及编程特性,有助于电路的编程电流设计,也为反熔丝击穿和漏电的标准制定提供参考。该研究对电极和温度特性的应用也有十分重要的意义。     

基于STM32的Lattice FPGA脱机编程系统设计

为了解决运用Lattice FPGA的深度嵌入式应用环境不便于升级维护的问题,提出一种基于STM32的新型脱机编程方案。该方案由上位机软件和基于STM32的脱机编程器两部分组成,实现了PC端的熔丝图VME文件格式转换、优化、管理及传输至脱机编程器和编程器上VME文件的存储、选择及下载功能。设计的脱机系统摆脱了传统的FPGA器件编程方式对PC机的依赖,提高了编程效率。通过测试及实际应用结果表明,该脱机编程系统具有便携、灵活、稳定的特点,能够有效地满足目标应用的生产、维护、升级需求。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.