驱动AM-OLED的2-a-Si∶H TFT的设计与制作

a-Si∶H/SiNx∶HTFT在长时间栅偏应力作用下,会产生阈值电压漂移,这主要是由绝缘层电荷注入和有源层亚稳态产生而引起的。针对电荷注入现象,文章首先通过控制源气体SiH4和NH3流量的不同,利用PECVD制作了不同N/Si比(0.87～1.68)的氮化硅绝缘材料,对其进行了椭偏、红外和光电子散射能谱(EDS)测试。制作了不同的MIS结构电容,对其进行老化实验和C-V测试分析,结果表明稍富氮(N/Si比稍大于标准Si3N4的化学计量比1.33)的氮化硅做成的MIS样品在老化前后C-V曲线偏移不是很明显,表明其缺陷态密度相对较小,能够有效减小半导体/绝缘层界面间的电荷注入。设计了驱动OLED的2-a-Si∶HTFT像素电路及其阵列版图,优化了电路中的几个关键参数,即T1的W/L=2.5、T2的W/L=25和存储电容Cs=0.8pF。运用7PEP生产工艺,制作了13cm(5.2in)的TFT阵列样品。对TFT进行I-V特性测试,其开态电流为10μA,开关比为106;对AMOLED显示屏样品进行了静态驱动下的亮度测试,其最高亮度为341cd/m2。     

a-Si:H-TFT阈值电压漂移机理及其在驱动OLED显示中的补偿设计

分析了a—Si：H—TFT阈值电压漂移的机理，即分析了栅偏应力下电荷注入到SiNx：H栅绝缘层和a—Si：H中亚稳态的产生对TFT阈值电压漂移的影响。根据非晶硅中亚稳态产生的特点，并针对驱动OLED的两管a—Si：H—TFT像素电路，提出了一种通过对数据信号时序的重新设计来补偿周值电压漂移的方法，即在数据信号间加插一个与数据信号极性相反的补偿信号。通过这种正负交替的信号，使驱动管TFT中由亚稳态造成的阈值电压漂移始终保持在一个动态平衡的过程，来实现驱动OLED电流稳定的目的。     

PECVD氮化硅膜的微电子学特性

利用电子极化的劳伦茨-劳伦兹关系研究了PECVD氮化硅膜的组分(Si/N).生长条件的变化导致薄膜的Si/N比率千差万别.采取C-V测试和高温准静态离子电流测试对不同Si/N比率的氮化硅膜的微电子学特性进行了探讨.     

单片式红外焦平面阵列的进展

本文着重介绍金属硅化物肖特基势垒红外探测器阵列（MSSBIRDA），碲汞电荷注入器件（HgCdTeCID)，电荷成像矩阵（CIM），锑化铟电荷注入器件（InSbCID)以及砷化镓／砷铝镓（GaAs/GaAlAs)多量子阱单片式红外焦平面阵列的现状。     

调制掺杂AlxGa1-xN/GaN异质结中AlxGa1-xN势垒层表面态及其他局域态性质研究

通过测量调制掺杂Al0.22Ga0.78N／GaN异质结样品的变频电容-电压(C-V)特性，对Al0.22Ga0.78N势垒层表面态的性质进行了研究．结果发现在小偏压下，样品的电容随着测量信号频率的增加而下降，说明势垒层中存在表面态．实验数据分析表明：表面态密度约为10^13cm^-2量级，表面态的时间常数比势垒层中其他局域态大．随着空间隔离层厚度的增加，势垒层中其他局域态密度随之增加．在金属电极和Al0.22Ga0.78N势垒层之间加入Si3N4绝缘层可以对表面态起到显的钝化作用，使表面态密度降为～10^12cm^-2量级．     

二氧化锡/多孔硅/硅光伏特性研究

测量了二氧化锡（SnO2）／多孔硅（PS）／硅（Si）的光电压谱，分析表明：在SnO2／PS／Si材料中存在着两个异质结；当样品吸附还原性气体时，其光电压明显下降。当样品在1％液化石油气的氛围时（相对于空气），光电压减少了16．4％-27．5％；在1％CO氛围时，减少了8．1％-19．4％；在1％H2氛围时，减少了12．1％-14．9％，因此SnO2／PS／Si可作为一种新的敏感元件。文中还对测量结果进行了讨论分析。     

SiO_2-Si_3N_4栅介质膜陷阱特性的高频C-V分析

采用高频 C-V特性测试技术 ,研究由热氧化生成的超薄 Si O2 膜和低压化学汽相淀积法制备的非均匀结构 Si3N4膜 ,两者组成的栅介质膜的陷阱特性 (包括陷阱密度、能量和空间分布深度等参数 )。结果表明 :在栅复合膜陷阱电荷非稳态释放模型下建立的高频 C-V理论及其分析方法 ,可以很好地表征实验曲线 ,并获取所需的存储陷阱分布参数     

薄膜绝缘层对陶瓷厚膜电致发光显示器件的影响

采用丝网印刷技术，在Al2O3陶瓷板上印刷、高温烧结内电极及绝缘层制备出陶瓷厚膜基板，进而制备了新型厚膜电致发光显示器（TDEL），整个器件结构为陶瓷基板／内电极／厚膜绝缘层／发光层／薄膜绝缘层／ITO透明电极。对用不同薄膜绝缘材料制备的显示器件的特性进行测试、比较、分析，结果表明薄膜绝缘介质层对器件的阈值电压、发光亮度均有一定的影响，以复合绝缘层的性能最优。最后对器件的衰减特性进行了初步分析。     

引入a—Si：H材料的氮化硅芯片电容

本文研制了两种引入a-Si:H材料的氮化硅芯片电容,其一是作为辅助介质引入的,其二是为了改善Si/Si2N4界面而引入的,文章报导了这两种电容的研制工艺及样品的各种性能,其结构表明,这类电容有希望应用于厚薄膜集成电路.     

硅衬底注氮方法制备超薄SiO2栅介质

利用栅氧化前在硅衬底内注氮可抑制氧化速率的方法,制得3.4nm厚的SiO2栅介质,并将其应用于MOS电容样品的制备.研究了N+注入后在Si/SiO2中的分布及热退火对该分布的影响;考察了不同注氮剂量对栅氧化速率的影响.对MOS电容样品的I-V特性,恒流应力下的Qbd,SILC及C-V特性进行了测试,分析了不同氧化工艺条件下栅介质的性能.实验结果表明:注氮后的热退火过程会使氮在Si/SiO2界面堆积;硅衬底内注入的氮的剂量越大,对氧化速率的抑制作用越明显;高温栅氧化前进行低温预氧化的注氮样品较不进行该工艺步骤的注氮样品具有更低的低场漏电流和更小的SILC电流密度,但二者恒流应力下的Qbd值及高频C-V特性相近.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Influence of polarization extinction ratio on distributed polarization coupling detection

Distributed polarization coupling in polarization-maintaining fibers can be detected by using a white light Michelson interferometer. This technique usually requires that only one polarization mode is excited. However, in practical measurement, the injection polarization direction could not be exactly aligned to one of the principal axes of the PMF, so the influence of the polarization extinction ratio should be considered. Based on the polarization coupling theory, the influence of the incident polarization extinction on the measurement result is evaluated and analyzed, and a method for distributed polarization coupling detection is developed when both two orthogonal eigenmodes are excited.     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.     

High-quality single-crystal CdSe nanoribbons and their optical properties

Large-scale synthesis of single-crystal CdSe nanoribbons is achieved by a modified thermal evaporation method, in which two-step-thermal-evaporation is used to control CdSe sources＇ evaporation. The synthesized CdSe nanoribbons are usually several micrometers in width, 50 nm in thickness, and tens to several hundred micrometers in length. Studies have shown that high-quality CdSe nanoribbons with regular shapes can be obtained by this method. Room-temperature photolumines-cence indicates that the lasing emission at 710 nm has been observed under optical pumping （266 nm） at power densities of 25-153 kW/cm^2. The full width half maximum （FWHM） of the lasing mode is 0.67 nm     

Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular aperture

By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussian beams passing through annular apertured paraxially and symmetrically optical systems written in terms of ABCD matrix were derived, and they could reduce to the cases with squared aperture. In a similar way, the corresponding analytical expressions of cosh-Gaussian beams through annular apertured ABCD matrix were also given. The method could save more calculation time than that by using the diffraction integral formula directly.     

中国建立EB级存储实验室,致力云计算应用(英文)

正With the support of 863 programs,Sugon Information Industry Co.,Ltd.,set up a dawning EB-class storage laboratory to address massive data storage requirements and largescale cloud computing demonstration applications.The Dawning EB-class cloud storage system adopts advanced fault-tolerant architecture,efficient data fault-tolerant algorithms with user authentication and data encryption policies to deal with the"lost""wrong"and"stolen"problems of data for ensuring the reliability and safety of the EB-class storage system in the public network application environments.The Dawning EB-class Storage Laboratory taking advan-