1.12Gb/s数字光通信实验系统

邮电部武汉邮电科学研究院于1988年1月完成1.12 Gb/s数字光纤通信实验系统的传输实验。通信容量为15000个活路。 1.12Gb/s数字光通信实验系统包括发送机、接收机两大部分及单模光纤。发送机由1.12Gb/s伪随机码(PRBS)发生器及1.12Gb/s光发送单元组成,其中激光器采用InGaAsP/InP-DC-DAL-DSM动态单     

12.5Gb/s 0.18μm CMOS时钟与数据恢复电路设计

采用0.18μm CMOS工艺设计实现了一个12.5 Gb/s半速率时钟数据恢复电路(CDR)以及1:2分接器,该CDR及分接器是串行器/解串器(SerDes)接收机中的关键模块,为接收机系统提供6.25GHz的时钟及经二分接后速率降半的6.25Gb/s数据.该电路包括Bang-bang型鉴频鉴相器(PFD)、四级环形压控振荡器(VCO)、V/I转换器、低通滤波器(LPF)、1:2分接器等模块,其中PFD采用一种新型半速率的数据采样时钟型结构,能提高工作速率达到12.5 Gb/s.芯片测试结果显示,在1.8V的工作电压下,VCO中心频率在6.25GHz时,调谐范围约为1GHz;输入12Gb/s、长度为231-1的伪随机数据时,得到6GHz时钟的峰峰抖动为9.12ps,均方根(RMS)抖动为1.9ps;整个系统工作性能良好,二分接器输出数据眼图清晰,电路核心模块功耗为150mW,整体芯片面积0.476×0.538mm2.     

一种用于14位250 MS/s ADC的3.5 Gb/s发送器

提出了一种用于14位250 MS/s ADC的数据发送器。该发送器输出采用电流模驱动方式,最高数据传输速率达3.5 Gb/s,数据输出仅需要2个数据端口。电路采用180 nm 1.8 V 1P5M CMOS工艺实现。测试结果表明,该发送器在3.5 Gb/s速率下的输出信号摆幅为800 mV,抖动峰峰值为100 ps,功耗为32 mW。采用该3.5 Gb/s数据发送器的ADC在250 MHz采样率下得到的信噪比为71.1 dBFS,无杂散动态范围为77.6 dB。     

一种6.25 Gb/s模拟自适应均衡器的设计

采用标准0.18 μm CMOS工艺,设计了一种速率达6.25 Gb/s的自适应模拟均衡器。均衡滤波器单元采用一种改进的有源负反馈结构,增加了高频补偿带宽和补偿范围。自适应回路具有自适应检测功能,能够根据不同的信道损耗产生不同的控制电压,用于调整均衡滤波器,进行高频补偿。对于标准的FR-4印刷电路板,在4 GHz处,该均衡器能够补偿高达16.97~24.87 dB的轨线损耗,可以有效减小非理想信道引起的码间串扰,并降低误码率。仿真结果表明,电路工作正常,经过FR-4线畸变的6.25 Gb/s伪随机信号通过均衡器后的峰峰值抖动小于0.3 UI。     

一个用于高速SerDes的基于0.18um CMOS工艺的6.25Gb/s均衡器

本文介绍了一种基于0.18mm CMOS工艺,适用于高速背板传输的6.25Gb/s均衡器。该均衡器由1抽头前馈均衡器(FFE)和2抽头判决反馈均衡器(DFE)组成,能够消除前向码间干扰和后向码间干扰。FFE中的延迟线采用了有源电感峰化技术,不仅增加了带宽,也节省了面积。基于CML的加法器,触发器和选择器的使用则提高了DFE的速度。测试结果表明,对于经过衰减达22dB的30英寸信道的6.25Gb/s数据,该均衡器能够很好地进行均衡。1.8V的电源电压下的功耗为55.8mW,包括焊盘在内的整个芯片面积为0.3*0.5 mm₂。     

一种6.25 Gb/s带预加重结构的低压差分发送器

采用SMIC 40 nm CMOS工艺,设计了一种带预加重结构的低压差分(LVDS)发送器。低压差分驱动器采用双运放反馈控制电路,可稳定输出信号的摆幅。采用边沿检测电流注入的预加重电路,对输出进行高频预加重,克服了数据高速传输中高频信号的损失。该发送器的速率为6.25 Gb/s,输出差分信号摆幅为300 mV,预加重比例为3.5 dB,功耗为7.1 mW。该低压差分发送器可应用于高速IO物理层电路中。     

0.18μm CMOS 10Gb/s光接收机限幅放大器

利用TSMC 0.18μm CMOS工艺设计了应用于SDH系统STM-64(10 Gb/s)速率级光接收机中的限幅放大器.该放大器采用了改进的Cherry-Hooper结构以获得高的增益带宽积,从而保证限幅放大器在10Gb/s以及更高的速率上工作.测试结果表明,此限幅放大器在10Gb/s速率上,输入动态范围为42dB(3.2mV~500mV),50Ω负载上的输出限幅在250mV,小信号输入时的最高工作速率为12Gb/s.限幅放大器采用1.8 V电源供电,功耗110mW.芯片的面积为0.7mm×0.9mm.     

0．18μm CMOS工艺10Gb／s VCSEL电压驱动器设计

采用SMIC0．18μm1P6M混合信号CMOS工艺设计了10Gb／sVCSEL电压驱动器,可以用于驱动共阴结构的VCSEL。电路采用了RC负反馈技术和C3A（电容耦合电流放大器）结构,仿真结果表明,电路在10Gb／s速率下工作性能良好,最高可工作至12．5Gb／s。电路采用1．8V和3．5V电压供电,直流总功耗为164mw。     

A 3.125-Gb/s inductroless transimpedance amplifier for optical communication in 0.35μm CMOS Xu Hui(徐晖), Feng Jun(冯军), Liu Quan(刘全), Li Wei(李伟)

采用0.35μm CMOS工艺设计了一种适用于光通信的低功耗前置放大器,芯片最高工作速率可达3.125Gb/s。该前置放大器采用RGC (Regulated Cascode)结构作为输入级,同时引入消直流电路来稳定电路的直流工作点。在片测试结果表明,前置放大器的跨阻增益为54.2dBΩ,-3dB带宽为2.31GHz,平均等效输入噪声电流谱密度为18.8pA/?Hz;输入为2.5Gb/s和3.125Gb/s信号时均可获得清晰眼图;3.3V单电源供电时,功耗仅为58.08mW,其中20mW来自输出缓冲。芯片面积为465μm435μm。     

基于系数可调FFE的10 Gb/s发送端的设计

采用SMIC 40 nm CMOS工艺,设计了一种工作在10 Gb/s的SerDes高速串行接口发送端电路,并创新性地提出了一种系数可调的FFE结构,使电路能适用于不同衰减的信道。电路主要模块为复接器、3阶FFE均衡器。复接器采用经典半速率结构,使用数字模块搭建,降低了功耗,并通过设计使采样时钟位于输入的最佳采样点,抑制了毛刺的产生。FFE均衡器采用结构简单的TSPC类型D触发器、低功耗的选择器和系数可调节抽头加法电路,使信号达到均衡效果,补偿信道的衰减。仿真结果显示,电路稳定工作于10 Gb/s,在1.1 V电源电压下功耗仅为30 mW。     

A 10-20 Gb/s PAM2-4 transceiver in 65 nm CMOS

This paper presents the design of a 10 Gb/s PAM2, 20 Gb/s PAM4 high speed low power wire-line transceiver equalizer in a 65 nm CMOS process with 1 V supply voltage. The transmitter occupies 430×240 μm2 and consumes 50.56 mW power. With the programmable 5-order pre-emphasis equalizer, the transmitter can compensate for a wide range of channel loss and send a signal with adjustable voltage swing. The receiver equalizer occupies 146×186 μm2 and consumes 5.3 mW power.     

Low-Power Circuits for a 2.5-V, 10.7-to-86-Gb/s Serial Transmitter in 130-nm SiGe BiCMOS

Low-power building blocks for a serial transmitter operating up to 86 Gb/s are designed and implemented in a 130-nm SiGe BiCMOS technology with 150-GHz SiGe f_T HBT. Design techniques are presented which aim to minimize high-speed building block power consumption. They include lowering the supply voltage by employing a true BiCMOS high-speed logic family, as well as reducing current consumption by trading off tail currents for inductive peaking. A serial transmitter testchip consuming under 1 W is fabricated and operation is verified up to 86 Gb/s at room temperature (92 Gb/s and 71 Gb/s at 0degC and 100degC, respectively). The circuit operates from a 2.5-V supply voltage, which is the lowest supply voltage for circuits at this data rate in silicon technologies reported to date.     

Design and realization of 1.3?Gb/s off-chip transmission circuitry using 0.35?μm CMOS technology

Low-voltage-differential-signaling (LVDS) is one of the very popular technologies which simultaneously addresses low dynamic power consumption and high data rate transmission in modern high speed circuit applications. In this paper, system level integration design approach is applied to design LVDS transmitter featuring high off-chip data rate. Full wave electromagnetic simulation technique was adopted to accurately characterize possible couplings and parasitic effects induced from the off-chip components which then acted as the termination of the output circuitry. Common mode feedback was included to perform fine tuning on the offset leading to much higher overall precision. Meanwhile, generation of the controlled current and voltage across termination was guaranteed through the introduction of a constant transconductance bias network. The design was implemented using TSMC 3.3?V 0.35???m CMOS technology with overall chip size of 0.923?mm². At a DC power consumption level of 29.4?mW, the LVDS transmitter exhibited an off-chip data rate of 1.3?Gb/s validated through measurements.     

Equalization and clock recovery for a 2.5-10-Gb/s 2-PAM/4-PAM backplane transceiver cell

A folded multitap transmitter equalizer and multitap receiver equalizer counteract the losses and reflections present in the backplane environment. A flexible 2-PAM/4-PAM clock data recovery circuit uses select transitions for receive clock recovery. Bit-error rate less than 10/sup -15/ and power equal to 40 mW/Gb/s has been measured when operating over a 20-in backplane with two connectors at 10 Gb/s.     

Phase and amplitude pre-emphasis techniques for low-power serial links

A novel approach to equalization of high-speed serial links combines both amplitude pre-emphasis to correct for intersymbol interference and phase pre-emphasis to compensate for deterministic jitter, in particular, data-dependent jitter. Phase pre-emphasis augments the performance of low power transmitters in bandwidth-limited channels. The transmitter circuit is implemented in a 90-nm bulk CMOS process and reduces power consumption by pushing CMOS static logic to the output stage, a 4:1 output multiplexer. The received signal jitter over a cable is reduced from 16.15 ps to 10.29 ps with only phase pre-emphasis at the transmitter. The jitter is reduced by 3.6 ps over an FR-4 backplane interconnect. A transmitter without phase pre-emphasis consumes 18 mW of power at 6Gb/s and 600mVpp output swing, a power budget of 3mW/Gb/s, while a transmitter with phase pre-emphasis consumes 24mW, a budget of 4 mW/Gb/s.     

万兆以太网技术的研究与实现

为了提高通信系统的数据吞吐量,增加系统集成度,在IEEE 802.3ae标准的基础上,对万兆以太网技术进行了研究并实现。万兆以太网技术是基于FPGA实现的,FPGA完成的主要工作包括:完成与上层软件的指令和数据交互、数据的组帧/解帧、与物理层的接口管理等。物理层发送端主要完成数据对齐、变速并加扰、并串转换等工作,将串行数据发送给光电转换模块,接收端正好相反。经过万兆以太网标准仪器测试,传输速率达到了10 Gb/s,大大提高了系统间数据传输的速度和效率,简化了系统结构。     

A 14-mW 6.25-Gb/s Transceiver in 90-nm CMOS

This paper describes a 6.25-Gb/s 14-mW transceiver in 90-nm CMOS for chip-to-chip applications. The transceiver employs a number of features for reducing power consumption, including a shared LC-PLL clock multiplier, an inductor-loaded resonant clock distribution network, a low- and programmable-swing voltage-mode transmitter, software-controlled clock and data recovery (CDR) and adaptive equalization within the receiver, and a novel PLL-based phase rotator for the CDR. The design can operate with channel attenuation of -15 dB or greater at a bit-error rate of 10^-15 or less, while consuming less than 2.25 mW/Gb/s per transceiver.     

A 4.8-6.4-Gb/s serial link for backplane applications using decision feedback equalization

In this paper, a serial link design that is capable of 4.8-6.4-Gb/s binary NRZ signaling across 40' of FR4 copper backplane traces and two connectors is described. The transmitter features a programmable two-tap feed forward equalizer and the receiver uses an adaptive four-tap decision feedback equalization to compensate for the losses in the channel at 6.4 Gbps. The transceiver core is built in LSI's 0.13-/spl mu/m standard CMOS technology to be integrated into ASIC designs that require serial links. The transceiver consumes 310 mW per duplex channel at 1.2 V and 6.4 Gb/s under nominal conditions.