三端双向负阻晶体管的模拟与实验

对双向负阻晶体管(BNRT)的三端特性进行了研究.根据器件模拟得到了器件内部电势和电场分布,解释了S型负阻特性产生机理.分别从模拟和实验得到了输出负阻曲线随控制极电压变化的情况,结果表明,随控制电压的增大,转折电压、转折电流和维持电压均增大.模拟结果和实验结果一致.BNRT的三端化实现,克服了两端应用的诸多缺点,大大增加了它在高速脉冲电路中的应用灵活性.     

三端双向负阻晶体管的模拟与实验

对双向负阻晶体管(BNRT)的三端特性进行了研究.根据器件模拟得到了器件内部电势和电场分布,解释了S型负阻特性产生机理.分别从模拟和实验得到了输出负阻曲线随控制极电压变化的情况,结果表明,随控制电压的增大,转折电压、转折电流和维持电压均增大.模拟结果和实验结果一致.BNRT的三端化实现,克服了两端应用的诸多缺点,大大增加了它在高速脉冲电路中的应用灵活性     

三端双向负阻晶体管的二维数值模拟及分析

对双向负阻晶体管(BNRT)的三端特性进行了数值模拟，得到了器件S型负阻曲线。根据BNRT不同工作状态下的内部电势、电子浓度和空穴浓度分布，解释了其S型负阻特性的产生机理。模拟分析了负阻曲线随控制电压变化的情况。结果表明，随控制电压的增大，转折电压、转折电流和维持电压均增大。最后，对不同结构和工艺参数的三端BNRT进行了模拟，总结出器件结构和工艺参数对负阻特性的影响。     

光电双向负阻晶体管的研制及特性分析

首次对双向负阻晶体管(BNRT)进行了光敏化,设计并研制出既有光敏特性又有“S”型负阻特性的一种新型光电开关器件——光电双向负阻晶体管(PBNRT)。介绍了器件的设计和研制过程;测量分析了其J—V特性与光强和栅极电压的关系;测量了光电开关的时间常数并进行了分析讨论。     

光电双基区晶体管中的光控电流开关效应

光电双基区晶体管体在光电混合模式工作条件下具有光控“Ｓ”型负阻特及其光控电流开关效应。测量了光照时ＩＢＥ－ＶＢＥ特性,Ｉｔｈ－Ｒｃ特性等曲线。并利用用电注入双基区晶体管的“Ｓ”型负阻产生机理解释了测得的结果。     

光电双基区晶体管光控脉冲振荡器的实验研究

光电双基区晶体管（ＰＤＵＢＡＴ）是一种能产生“Ｎ”型光电负阻特性的新型光电负阻器件。通过对试制出的样管进行测试,发现ＰＤＵＢＡＴ在无外接电感的情况下即可发生脉冲振荡。脉冲振荡的频率和振幅均受到入射光强度的调制,即随光强的增大,振荡频率增加,振由减小。最后,对该器件的应用及发展前景进行了讨论。     

DPLBT型高频硅光电负阻器件的研制

研制出特征频率fT≥220MHz,且具有较高光电灵敏度和最大峰值电流的光电负阻器件--达林顿光电λ型双极晶体管(DPLBT),并首先用发光二极管(LED)和光电负阻器件(DPLBT)封装成一种和常规光电耦合器不同的具有光电流开关、光控电流双稳态和光控正弦波振荡多种功能的新型光电耦合器(PCDPLBT).     

SPNRD的光电负阻特性与光学双稳态特性间的对应关系

文章对电阻为负载时,硅光电负阻器件（ＳＰＮＲＤ）的光电负阻特性和光学双稳态特性间的对应关系进行了系统的分析。定义了描述静态光学双稳态特性的７个基本参数,并分析了负载电阻（ＲＬ）和电源电压（Ｖ０）对这些参数的影响,理论分析结果与实测结果相一致,所得出的结论适用于由负阻特性产生双稳态特性的所有情况１。     

一种新型结构的光电负阻器件

提出了一种新型结构的硅光电负阻器件———光电双耦合区晶体管(photoelectricdualcoupledareatransistor,PDUCAT) ,它是由一个P+ N结光电二极管和位于两侧的两个纵向NPN管构成的.由于两个NPN管到光电二极管的距离不同,使得它们对光生空穴电流的争抢能力随外加电压的变化产生差异,同时两个NPN管电流放大系数相差较大,最终导致器件负阻现象的出现.文中对PDUCAT进行了工艺模拟和器件模拟,围绕着负阻的形成机理和影响器件性能的主要参数进行了讨论,初步建立了器件模型.     

一种新型结构的光电负阻器件

提出了一种新型结构的硅光电负阻器件--光电双耦合区晶体管(photoelectric dual coupled area transistor,PDUCAT),它是由一个P+N结光电二极管和位于两侧的两个纵向NPN管构成的.由于两个NPN管到光电二极管的距离不同,使得它们对光生空穴电流的争抢能力随外加电压的变化产生差异,同时两个NPN管电流放大系数相差较大,最终导致器件负阻现象的出现.文中对PDUCAT进行了工艺模拟和器件模拟,围绕着负阻的形成机理和影响器件性能的主要参数进行了讨论,初步建立了器件模型.     

Optically controllable S-type negative resistance presented by a combinational connection of photocoupled FET's

A negative resistance circuit constructed with a combinational connection of photocoupled FET's is proposed, which indicates optically controlled S-type negative resistance characteristics. The circuit can be used as a reciprocal switching element with two external light inputs and an application to optoelectronic flip-flop operation is presented. Moreover, a bidirectional S-type negative resistance circuit is proposed, in which three external light inputs may change widely the bidirectional S characteristics. Applications of the circuit, phase control operation of an alternatively applied voltage, and bilateral relaxation oscillation are demonstrated.     

并联双晶体高速削波快脉冲源的设计

设计了一种并联双晶体高速快脉冲源,用于激光物理实验中预脉冲的高速削波。该削波脉冲源采用升压工作模式,由光电转换模块、高压电源模块、开关器件及电路等部分组成。光电转换模块将光信号转变为开关通断信号,用于控制高压脉冲输出;集成的高压电源模块和开关器件简化了电路设计,增加了该电源的可靠性;设计合理的开关电路和元件参数,保证稳定输出符合要求的高压脉冲波形。该快脉冲源的输出脉冲幅度大于4 000 V,下降沿小于10 ns,时间抖动小于1 ns,已成功用于激光物理实验预脉冲的削波。     

一种新的用于RFIC ESD保护的双槽LVTSCR

低压触发硅控整流器件（Low-Voltage Triggering Silicon-controlled Rectifier,LVTSCR）由于具有高的放电效率和低的寄生参数,在ESD防护方面存着诸多优势,尤其对于深亚微米集成电路和高频应用领域。本文对影响LVTSCR回退（snapback）特性曲线的几个重要因素和它的配置方式作了详细的分析和评价,这些参数包括阳极串联电阻、栅电压以及器件的结构和尺寸。并且提出了一种双槽LVTSCR结构,该结构可以获得较高且容易调节的维持电压,从而使其snapback特性很好地符合ESD设计窗口规则。论文的最后讨论了RFIC中采用LVTSCR的ESD保护策略。     

Three-terminal GaAs switches

A new three-terminal GaAs device has been developed and its switching characteristics investigated. The third ohmic contact of the device is located on a side surface near the cathode of a conventional two-terminal long n-type GaAs oscillator. High-speed switching of oscillation, with turn-on and turnoff times of one nanosecond, has been successfully obtained by applying single short triggering pulses or combined positive and negative pulses between the third contact and the cathode, using a fixed bias voltage between the cathode and the anode. The triggered oscillation can be sustained after the triggering pulse is removed if the bias voltage is above the minimum sustaining voltage of oscillation, which is about 80 to 90 percent of the threshold value. This paper will briefly review the triggering conditions of the two-terminal oscillator devices and present various current waveforms of triggered oscillations obtained with the three-terminal devices. Some correlations between the sustaining voltage of oscillation and the triggering voltage will be discussed. This device could be used as high-speed switching and memory elements in logic circuits.     

Optical comparator: A new application for avalanche phototransistors

We describe an InP/InGaAs heterojunction avalanche phototransistor which can be switched from a low-current "off" state to a high-current "on" state with an optical pulse. The transition is characterized by a region of negative dynamic resistance. In the switching mode where the effective current gain is determined by the circuit series resistance, gains exceeding 10⁵have been achieved. The switching rise time is an order of magnitude less (≃20 ns) than the rise time in the normal phototransistor mode. In addition, we show that this type of device can be used as an optical comparator which discriminates between optical pulses relative to a fixed threshold power level. The threshold level can be varied over three orders of magnitude by changing the bias voltage.     

An optically controllable negative resistance circuit constructed with optocouplers

An optocoupler with a Darlington configuration at the output side can be used as a one port active device with a current-controlled negative resistance by simply connecting the input and output sides in cascade. The author proposes an optically controllable negative-resistance circuit constructed with optocouplers. The breakover voltage and the holding current of the negative-resistance characteristics can be controlled widely with two external light inputs. Hence, the circuit may be applied to optronic functional switching operations. It is demonstrated that an optically controlled relaxation oscillator can be easily constructed using the circuit, and that applications of the relaxation oscillator to a light modulator and an optical Schmitt trigger can be realized by simple circuit configurations.     

Si/SiGe digital optoelectronic switch

The physical parameters and functional characteristics of a Si/SiGe digital optoelectronic switch are reported. The device is found to have bistable electrical states: a high-impedance (40 kΩ) OFF state connected to a low-impedance (100 Ω) ON state by a regime of negative differential resistance. The switching voltage and holding voltage are measured to be 2.6 and 1.3 V, respectively, and the switching current and holding current are measured to be 500 μA and 1 mA, respectively. These DC characteristics are found to be similar to those measured in double heterostructure optoelectronic switching devices manifested in the AlGaAs/GaAs materials system. The DC characteristics of this Si/SiGe digital optoelectronic switch are also found to be sensitive to optical input and temperature     

A new AlGaAs/GaAs/InAlGaP npn bulk-barrier optoelectronic switch

Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of illumination increases the switching voltage V/sub S/ and decreases the switching current I/sub S/, which is quite different from other results reported. In addition, it possesses obvious NDR even up to 160/spl deg/C. This high-temperature performance provides the studied device with potential high-temperature applications.