钝化层对声表面波滤波器的影响

为了研究钝化层对声表面波(SAW)滤波器性能的影响,以二氧化硅(SiO₂)薄膜为钝化层,对厚度为12~80 nm 的SiO₂膜钝化层工艺数据进行分析。结果表明,当SiO₂膜钝化层覆膜厚度大于25 nm时其膜层质量均匀性好,致密度高。同时SiO₂膜钝化层厚度对膜层间的粘性、传播损耗、自身的质量负载及谐振峰处的频率均有影响,且会引起过渡带宽发生变化。     

基于wx-AMPS的锑基双结叠层太阳电池的模拟优化

锑基薄膜太阳电池具有原材料丰富、制备方法简单 和光电性能优异等优势。将宽带隙 Sb₂S₃电池与窄带隙Sb₂Se₃电池组成叠层太阳电池能够进一步提高光谱能量利用率 ,增强器 件性能。基于此,采用wx-AMPS软件对锑基双结叠层薄膜太阳电池进行了仿真优化。仿 真结果显示,要想获得高效的叠层太阳电池首先需要高质量的吸收层,吸收层缺陷态要低于 10¹⁵ cm－3才能够将光生载流子充分转换为电流。除此 之外,子电池厚度的调制能够平衡顶 底电池的光谱响应,在叠层太阳电池的优化中也十分重要。基于此,绘制了不同顶底电 池厚度叠层太阳电池性能参数的等高线图,为叠层太阳电池的实验优化制备提供指导,并最 终在顶底电池厚度分别为700 nm和2500 nm的情况下,得到24.60%的锑基双结叠层太阳电 池 的最高光电转换效率。研究结果体现了新型锑基薄膜叠层太阳电池结构的优势和发展 潜力。     

热处理温度对Li2SrSiO4:Eu2+发光性能的影响

采用高温固相反应法制备一种白光发光二极管(LED )用黄色荧光粉Li₂Sr(1－x)SiO₄:xEu²⁺, 研究测试温度和退火温度对Li₂Sr(1－x)SiO₄:xEu²⁺荧光粉发光性能的影响。实验发现,对于 不同掺杂浓度的样品,在不同测试温度下,经过热处理后的样品与未处理样品相 比,激发和发射光谱强度得到普遍提高,原因是热处理后晶体结构的完整性得到 提高。在变温测试下,Li₂Sr(1－x)SiO₄:xEu²⁺的发光性能总体是随着测试温度升高而 下降,但在短波长(500～550nm)范围内的发光性能随着温度升高 而增强。分析表明,这与Li₂SrSiO₄基质材料的晶体结构和掺杂元素有关。     

ITO薄膜的电阻并联效应研究

采用电子束蒸发镀膜方法在K9玻璃基底上分别镀制了ITO/SiO₂/ITO,ITO/Ti₂O₃/ITO和ITO/MgF₂/ITO结构的多层薄膜,用四探针方块电阻仪测量薄膜表面的方块电阻,用原子力显微镜观测样品的表面微观形貌。结果显示,当ITO薄膜的粗糙度较大且介质薄膜的物理厚度小于100nm时,各层ITO薄膜之间通过山峰状的凸起结构相连通,导致样片表面的方块电阻测量值与各层ITO薄膜电阻的并联值相当。这表明,当ITO薄膜的粗糙度较大且介质薄膜厚度较小时,各层ITO薄膜表现出电阻并联效应。利用多层ITO薄膜的电阻并联效应设计并制备了450～1200nm超宽光谱透明导电薄膜,用四探针方块电阻仪测量了试验样片的表面方块电阻,用紫外-可见-近红外分光光度计测试了样片的光谱透射率。结果显示,在相同表面方块电阻条件下,相比于单层ITO薄膜,利用ITO薄膜电阻并联效应所制备的多层透明导电薄膜具有更高的光谱透射率。     

提高KLa1－x(MoO4)2:Eu3+x荧光粉发光性能的研究

在氧化气氛下,采用固相反应法合成了一系列 KLa1－x(MoO₄)₂:Eu³⁺x红 色荧光粉。利 用X射线衍射仪、扫描电子显微镜和荧光分光光度计考察了KLa1－x(MoO₄)₂:Eu³⁺x荧光粉的 物相、形貌和发光强度。结果表明,激活剂Eu³⁺和助熔剂H₃BO₃的添加没有改变K La(MoO₄)₂的物相结构。KLa1－x(MoO₄)₂:Eu 3+x荧光粉可以被近紫外(393 nm )和蓝光(463 nm)有效 激发,主发射峰值位于616 nm附近,发射红光,归属为Eu³⁺的 ⁵D₀→⁷F₂跃迁。393nm和463nm的激发波长与目前广泛使用的近紫外和蓝光LED芯片相匹配。添加质量分数为5%的H₃BO₃时 ,所制备的KLa1－x(MoO₄)₂:Eu³⁺x红色荧光粉的发光强度比未掺杂H₃BO₃时的发光强度提高了234%,色坐标 (0.639,0.339)比商用的Y₂O₃:Eu³⁺(0.625,0.338)更接近于美国电 视标准委员会标准(0.67),这表明这 种荧光粉具备成为商业化红色荧光粉的潜力。     

新型近红外超长余辉材料Zn3Ga4GexO9+2x:1%Cr3+的制备与发光性能研究

采用高温固相反应法制备了Zn₃Ga3.99Ge xO9+2x:1%Cr³⁺(x=1,2,3,4,5)新型近红外长余辉荧光粉, 利用X射线衍射(XRD)和荧光(PL)光谱分别对其晶体结构、PL性质和余辉性能进行了分析。结 果表明,Zn₃Ga3.99Cr0.01GexO9+2x实际上是Cr³⁺和Ge⁴⁺共同取代了ZnGa₂O₄尖晶石 结构中的部分Ga³⁺而形成的固溶体; 样品可以被近紫外光和蓝绿光有效地激发,发射出640nm波长范围的红光和近红外光,峰值位于695nm波长 附近,属于Cr³⁺的特征发射,对应于²E→⁴A₂的跃迁;余辉持续时间均超过300h。进一步分析了烧结温度对Zn₃Ga 3.99GexO9+2x:1%Cr³⁺(x =1,2,3,4,5)材料的发光和余辉性能影响,得到Zn₃Ga3.99Cr0.01Ge₁O₁₁ 的最佳烧结温度是1200℃,且随温度的升高, 样品的发光和余辉性能均得到提高。     

WO3对Rubrene/C70有机太阳能电池性能的改善

研究了WO₃对Rubrene/C₇₀有机太阳能电池 (OSCs)性能的 改善,制备了结构为ITO/WO₃/Rubrene/C₇₀/BCP/Al的OSCs,其中WO₃插入在I TO和Rubrene中间作为阳极修饰层。通过优化WO₃的厚度,研究了WO₃对OSCs性能的改善及其作用机理。实验发现,器件的短路电流Jsc、开路电压V_oc、 填充因子(FF)、光电转换效率(PCE)和串联电阻Rs等性能参数随WO₃厚度的变化呈规律性变化;当 WO₃厚度小于80 nm时,器件PCE随着厚度的增加不断增大;当W O ₃厚大于80 nm时,器件PCE随着厚度的 增加不断减小;当WO₃厚度为80 nm 时,器件PCE达到最高为1.03%, 相应的J sc、V_oc、FF分别为2.81mA·cm－2、 0.83V、43.85%,Rs为45.3Ω·cm²,对比没有WO₃修饰层, 器件的J_sc、V_oc、FF和PCE分别提高了31%、137%、17%,Rs降低了33%。     

ZnO缓冲层改善Rubrene/C70有机太阳能电池的性能

通过制备结构为ITO/ZnO/C₇₀ /Rubrene/MoO₃/Al 的有机太阳能电池(OSCs),研究了ZnO作为阴极 修饰层对Rubrene/C70有机太阳能电池性能的改善。同时通过 优化ZnO的厚度研究了ZnO的工作机理。 从实验结果可以看出,随着ZnO厚度的变化,器件的短路电流密度(J_sc)、开路电压(V_oc)、填充因子 (FF)、光电转换效率(PCE)和串联电阻(R_s)等性能参数呈现出了规律 性变化,当ZnO层厚度比较 薄时,器件PCE随着厚度的增加不断增大,当ZnO层厚度为53nm时,器件PCE达到最高为1.13%, 对应的J_sc、V_oc、FF分别为2.82mA·cm－2、0. 84V、45.86%,R_s为66.2Ω·cm²,当ZnO层厚度继续增 加时,器件PCE开始减小。对比没有ZnO阴极修饰层,器件最优时 的Jsc、V_oc、FF和PCE 分别提高了49%、17%,R_s降低了56%。     

TiO2表面预处理对钙钛矿太阳电池性能的影响

采用一步法制作了基于 n-i-p结构的钙钛矿太阳电池。为了提高钙钛矿活性层以及TiO₂与钙钛矿活性层接触面的质量,用 MAI、MABr和PbI₂溶液对TiO₂层进行预处理,研究了预处理对电池性能的影响。结果显示对TiO₂进行预处理能够改善钙钛矿活性层薄膜的质量并提升钙钛矿太阳电池的性能。通过溶液预处理,太阳电池的能量转换效率和器件稳定性有显著提高,同时滞后效应明显减弱。     

介稳态TiCl4醇水溶液水解制备TiO2致密层及其在无机-有机杂化异质结钙钛矿太阳电池中的应用

致密层作为钙钛矿太阳电池的重要组成部分, 对其制备方法, 工艺及微结构等性质的研究对提高钙钛矿太阳电池的光伏性能具有重要影响. 本文利用介稳态的TiCl₄醇水溶液作为前驱体溶液, 通过旋涂水解制备TiO₂致密层, 并研究了前驱体溶液不同醇水比对致密层微结构及其相应太阳电池光伏性能的影响. 结果表明, 将2 mol.L_-1的TiCl₄的水溶液按醇水体积比3:1的比例用异丙醇稀释后所制备的TiO₂致密层其厚度为126 nm, 且相应的太阳电池取得最高的光电转换效率10.6 %.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.