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微桥是微测辐射热计阵列像元的重要部分,经微细加工工艺制成的微桥结构常常发生弯曲变形,从而严重影响器件性能。利用有限元分析方法研究了造成微桥变形的原因。结果表明,重力导致的微桥形变值仅为1.44×10-5μm,而薄膜的本征应力导致的形变值却高达2.108μm,与实际观测值相当。因此,本征应力是造成微桥变形的主要原因。此外,还研究了本征应力梯度导致的形变,并提出了采用在电极的表面再沉积一层SiNx薄膜的方法,使桥腿的形变值由0.587μm明显地减小到0.271μm,有效地控制了本征应力梯度导致的桥腿变形。 相似文献
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基于多物理场有限元分析与理论计算相结合的方法,采用Intellisuite软件完成了12μm×12μm微测辐射热计结构的设计与仿真,具体工作包括:单元结构二维版图及工艺流程设计和单元结构三维精确建模,结合实际MEMS结构的材料参数,进行了电学与热电耦合多物理场有限元仿真模拟分析。通过仿真优化获得探测单元的主要热电参数、响应时间和响应率,分别为:热导4.31×10-8 W/K、热容2.69×10-10 J/K、电压响应率(未经后端读出电路放大)7 200V/W、热响应时间6.24ms。采用所提出的微桥设计仿真方法,可显著提高器件设计效率和设计精度,缩短研发周期,可满足超大规模小像元非致冷红外焦平面探测器的设计要求。 相似文献
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电容式MEMS开关中弹性膜应力对驱动电压的影响 总被引:3,自引:0,他引:3
详细分析了多种参数对 MEMS电容式开关驱动电压的影响 ,包括材料选取和工艺参数变化 ,并对驱动电压理论值进行计算。利用表面微机械加工技术在硅衬底上实现了电容式开关 ,测试结果表明采用 Al0 .96 Si0 .0 4弹性膜和厚胶牺牲层工艺能获得适中的剩余应力释放 ,微桥应力约为 10 6 N/m2 ,这为获得较低的开关驱动电压提供了可能。对长 1m m的 MEMS开关 ,当弹性膜厚为 0 .5μm,桥高为 3μm、桥宽为 30 μm、桥长为 2 50 μm时获得了 2 5V的驱动电压 ,S参数测试表明该电容式开关 1~ 4 0 GHz频段内的插入损耗低于 1d B。 相似文献
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提出了一种基于微机械工艺的新型复合微桥膜结构,由低应力SiN/SiO2 (0.5μm/50nm)及Cr/Au(30nm/1μm)构成.相应的工艺流程较为简单.对影响其特性的因素进行了理论分析,并提出了3种桥膜的平面结构;利用静电/力耦合有限元法分析了各种结构的静电驱动特性以及各阶模态,结果得到了令人满意的驱动和机械性能;通过有限元高频仿真软件对桥膜结构与共面波导形成的可调电容结构进行了分析,结果表明其具有良好的射频/微波性能.该桥膜结构适用于RF MEMS开关、移相器及开关式可调电容和滤波器等. 相似文献
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设计了一种基于光敏材料硅(Si)的宽频带极化不敏感的光驱动可调谐太赫兹超材料吸波器(metamaterial ab-sorber,简称MMA).该可调谐太赫兹MMA基本单元结构由嵌入光敏硅的紧凑开缝环谐振器结构、中间介质隔离层与金属底板构成.硅的电导率随着入射光的强度而发生改变,从而使太赫兹MMA工作频率和吸波性能得到有效的调节.数值计算结果表明:当硅电导率在1. 0×10~3S/m到5. 0×10~5S/m范围内动态调节时,该MMA吸波特性在0. 442 THz到0. 852 THz范围内动态调节.另外,其相对调节带宽达到63. 37%,吸收率调制深度达到60. 22%.进一步的数值计算结果表明我们所设计的MMA具备极化不敏感和宽入射角的特性. 相似文献
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High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center. 相似文献
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In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy. 相似文献
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This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors. 相似文献
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YUXiao-hua XIANGYu-qun 《半导体技术》2005,30(2):30-32,37
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB. 相似文献
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The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO>6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs. 相似文献
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Meihua Shen Wilfred Pau Nicolas Gani Jianping Wen Shashank Deshmukh Thorsten Lill Jian Zhang Hanming Wu Guqing Xing 《半导体技术》2004,29(8)
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration. 相似文献
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White organic light-emitting devices based on fac tris(2- phenylpyridine) iridium sensitized 5,6,11,12-tetraphenylnap -hthacene 总被引:1,自引:0,他引:1
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V. 相似文献
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Complete approach to automatic identification and subpixel center location for ellipse feature 总被引:1,自引:0,他引:1
XUE Ting WU Bin SUN Mei YE Sheng-hua 《光电子快报》2008,4(1):51-54
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction. 相似文献
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We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network. 相似文献