衬底温度对硒碲铅薄膜结构及红外光学性能的影响

使用Bridgman法生长的PbTe0.92Se0.08材料在硅衬底上沉积硒碲铅薄膜,采用X射线衍射(XRD)、电子扫描显微术(SEM)、能量散射X射线分析(EDAX)对薄膜的结构、表面形貌和化学配比进行了分析.结果表明,沉积的硒碲铅薄膜为多晶结构,具有明显的择优取向,晶粒为矩形.衬底温度对硒碲铅薄膜的红外光学性能有明显的影响,薄膜的折射率在5.2到5.8之间,消光系数均小于0.1,在波长大于6μm的红外光谱范围,一定衬底温度沉积的薄膜消光系数具有10-3量级.研究表明,硒碲铅材料在红外光学薄膜领域具有应用前景.     

化学浴沉积PbSe多晶薄膜及其光电性能初探

分别以硒脲和硒粉为Se2-制备剂的主要原料,用化学浴沉积法制备了PbSe多晶薄膜。对所制备薄膜用形貌、XRD、TEM和红外透射谱等方法进行表征分析。两种制备方法均获得了结晶度良好的PbSe多晶薄膜。以硒粉所制备的PbSe薄膜颗粒度为1μm,以硒脲所制备的薄膜颗粒度为0.3μm,小颗粒薄膜出现红外吸收限蓝移现象。测得由所制备的薄膜得到的PbSe光导型探测器原型器件的电压响应率为1200 V/W。     

准分子脉冲激光沉积法制备的ZrO2薄膜结构和电学性能的研究

采用准分子脉冲激光沉积法 (PLD)分别在Pt/Ti/SiO2 /Si和SiO2 /Si衬底上制备了ZrO2 薄膜 ,采用扩展电阻法 (SRP)研究了薄膜纵向电阻分布 ;采用X射线衍射法 (XRD)研究了衬底温度对ZrO2 薄膜结晶性能的影响 ;精确测试了薄膜的表面粗糙度 ;讨论了薄膜结晶性能与其电学I V特性之间的关系。     

激光脉冲沉积法在Si(100)上生长c轴择优取向的LiNbO3晶体薄膜及其性能

采用激光脉冲沉积(PLD)法在Si(100)衬底上生长得到了完全c轴择优取向的LiNbO3(LN)薄膜,X射线衍射分析表明LN(006)衍射峰的半峰宽为0.35°.利用棱镜耦合器,激光可以被耦合到LN薄膜中,形成TE和TM模式的光波导.测得LN薄膜的折射率n0为2.285,薄膜的厚度为0.199μm.     

激光脉冲沉积法在Si(100)上生长c轴择优取向的LiNbO3晶体薄膜及其性能

采用激光脉冲沉积(PLD)法在Si(100)衬底上生长得到了完全c轴择优取向的LiNbO3(LN)薄膜,X射线衍射分析表明LN(006)衍射峰的半峰宽为0.35°.利用棱镜耦合器,激光可以被耦合到LN薄膜中,形成TE和TM模式的光波导.测得LN薄膜的折射率n0为2.285,薄膜的厚度为0.199μm.     

PLD法制备透明ZnO薄膜的主要点缺陷研究

采用脉冲激光沉积(PLD)法在石英衬底上制备了ZnO薄膜。为研究ZnO薄膜内部主要点缺陷,我们用(002)ZnO单晶与ZnO薄膜作对比,并进行了霍尔测试、X线衍射(XRD)和光学透射谱等基本表征。霍尔测量得到的高的霍尔迁移率及XRD图表明,制备的ZnO薄膜结晶良好,具有沿c轴高度择优取向。同时,ZnO薄膜衍射峰相对于单晶向大角度方向发生了漂移。透射谱表明,ZnO薄膜在可见光区透过率为75%,吸收带边相对于单晶发生蓝移。各种表征手段证明PLD法制备的ZnO薄膜主要点缺陷为Zn填隙(Zni)。     

非晶氮化硼薄膜的场致电子发射研究

利用脉冲激光沉积 (PLD)技术在镀钛的陶瓷衬底上制备出了非晶态氮化硼薄膜 ,借助于X射线衍射(XRD)、扫描电子显微镜 (SEM )及Raman光谱分析了该薄膜的结构 ,并研究了薄膜场致电子发射特性 ,阈值电场为4 6V μm ,当电场为 9V μm时 ,电流密度为 5 0 μA cm2 。     

激光能量对脉冲激光沉积法制备ZnO薄膜性能的影响

脉冲激光沉积技术(PLD)易于获得高质量的氧化物薄膜已成为一种重要的制备ZnO薄膜的技术.采用脉冲激光沉积(PLD)(KrF准分子激光器:波长248 nm,频率5 Hz,脉冲宽度20 ns)方法在氧气气氛中以高纯Zn(99.999%)为靶材、在单晶硅和石英衬底表而成功生长了ZnO薄膜.通过X射线衍射仪、表面轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了激光能量变化对其性能的影响.实验结果表明我们使用PLD法可以制备出(002)结晶取向和透过率高于75%的ZnO薄膜,激光能量为450 mJ的ZnO薄膜的发射性能较好,但激光能量的增加不能改善薄膜的透光率.     

衬底温度对CZTSSe薄膜结构特性的影响

采用热蒸发法制备铟锌锡硫(CZTSSe)薄膜。采用低 温一步 法在300℃衬底温度下制备CZTSSe薄膜;采用两步法,即在衬底温度 分别为300℃制备CZTSSe 薄膜;将衬底温度设定为480℃不变,一步蒸发沉积CZTSSe薄膜。通 过对X射线衍射(XRD)、 扫描电镜(SEM)、拉曼谱对比发现,在300℃低温下一步法和300℃ 、480℃两 步法沉积的薄膜表面粗糙,碎小晶粒较多;在480℃一步高温法制备 的薄膜表面平整, 晶粒大小均匀,3个衍射峰的半高峰宽变窄,薄膜的结晶质量得到 改善,且没有发现其它杂相的拉曼特征峰,沉积出适合作为制备CZTSSe薄膜太阳电池的 吸收层。     

衬底温度对脉冲激光沉积制备ZnO性能的影响

本文采用脉冲激光沉积（PLD）(KrF准分子激光器：波长248 nm,频率5Hz,脉冲宽度20 ns）方法在氧气气氛中以高纯Zn（99.999%）为靶材、在单晶硅和石英衬底表面成功生长了ZnO薄膜。通过X射线衍射仪、表明轮廓仪、荧光光谱仪、紫外可见分光光度计对合成薄膜材料的晶体结构、厚度、光学性质等进行了研究,分析了衬底温度变化对其性能的影响。实验结果表明我们使用PLD法在室温下可以制备出了高度结晶取向、高透过率和近带边发射的高质量ZnO薄膜。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.