(TbBi)3GaxFe5-xO12薄膜/(TbYbBi)3Fe5O12晶体复合结构的生长和在光通信波段的磁光性能

用助熔剂法生长出掺Bi复合稀土铁石榴石晶体((TbYbBi)3Fe5O12),用(TbYbBi)3Fe5O12替代传统的无磁性Gd3Ga5O12晶体作基底液相外延掺Bi稀土铁鎵石榴石薄膜((TbBi)3GaXFe5-XO12).测量了Tb0.87Yb1.62Bi0.51Fe5O12晶体和Tb2.43Bi0.57Ga0.12Fe4.88O12薄膜/Tb0.87Yb1.62Bi0.51Fe5O12晶体复合结构材料在光通信波段(波长λ=1500-1620nm)处的光透射谱(T)、饱和磁化强度(Ms,0.5×106A/m)、法拉第旋转温度系数(FTC,5×10-5/K)和法拉第旋转波长系数(FWC,0.05%/nm).所得结果表明:Tb2.43Bi0.57Ga0.1Fe4.9O12薄膜/Tb0.87Yb1.62Bi0.51Fe5O12晶体复合结构材料的综合性能适用于宽带和温度稳定的光隔离器及其他光通讯器件.     

大尺寸TGG晶体生长与性能研究

铽镓石榴石(Tb_3Ga_5O_(12),TGG)晶体具有大的Verdet常数、低的透射损耗、高的热导率及高的激光损伤阈值,是制作高功率全固态激光器中法拉第隔离器的最佳磁光材料。采用自主研发的JGD-800型上称重自动提拉炉,成功生长出φ53mm×80mm,外观完整,无开裂、无螺旋的TGG晶体。加工了用于高功率隔离器、尺寸为φ40mm×30mm的TGG样品,通过可见及近红外分光光度计测试,晶体透过率约为80.6%;测试晶体的室温热导率为4.566 W/(m·K),其热导率随温度升高而下降。热膨胀测试结果表明,在26.5~200℃时,热膨胀系数为-2.682 0×10-6 K~(-1);在200~500℃时,热膨胀系数为15.090 4×10~(-6) K~(-1)。通过正交消光法测试1 064nm波长晶体的Verdet常数为39.9rad/(mT);经ZYGO干涉仪测试晶体的光学均匀性为4.3×10~(-6),透射波前为λ/5(波长λ=632.8nm);采用波长1 064nm,10Hz、9ns激光测试晶体的激光损伤阈值为3.5GW/cm~2。结果表明,本实验方法生长的大尺寸TGG晶体质量较好,在高功率全固态激光器领域中具有广泛的应用前景。     

一种新型偏振相关磁光隔离器的设计

该文介绍了一种新型的光纤型法拉第磁光隔离器设计方法,利用液相外延制备的单晶石榴石(BiTm)3(GaFe)5O12膜作为法拉第转子,通过对光路结构的改进设计,有效降低了光隔离器体积和所需饱和外场。当外磁场H=47×103 A/m时,法拉第旋角可达到45°@1 550 nm,光吸收系数为15 cm-1 @1 550 nm,光透射率为85%@1 550 nm,整体满足设计要求。     

YbBi··YIG磁光电流传感器性能研究

采用高温助熔剂熔盐生长出了复合掺杂 Yb Bi:YIG磁光石榴石单晶 ,并应用于磁光光纤电流传感器研制 .此单晶的比法拉弟旋转为 - 40 4deg/ cm,磁光优值为 2 5 .8deg/ d B,饱和磁化场为 140 0 Oe,温度系数为 4.2× 10 - 4 K- 1(室温 ,λ=1.5 5μm ) .与纯 YIG相比具有较好的磁光性能 ,有更高的比法拉弟旋转角和磁光优值以及较小的温度依赖性 .用此单晶作为法拉弟转子材料 ,建立了单光路结构的磁光光纤电流传感器的实验原型 ,测试了它在测量5 0 Hz交变电流时的性能 ,测试结果表明传感系统具有较高的精度和灵敏度并有较好的线性关系     

（YbTbBi）_3Fe_5O_（12）块状单晶生长及其磁光性能

用助熔剂法生长出（ＹｂＴｂＢｉ）３Ｆｅ５Ｏ１２块状单晶，测量了该单晶在１．０～１．７μｍ范围的Ｆａｒａｄａｙ旋转谱及透射谱．当温度为１０～８０℃，λ＝１．５５μｍ时，测得该单晶的Ｆａｒａｄａｙ旋转温度系数为２．０×１０－２．（°）·ｍｍ－１·Ｋ－１．所得结果表明：（ＹｂＴｂＢｉ）３Ｆｅ５Ｏ１２单晶既有较大的Ｆａｒａｄａｙ旋转角，又有很小的温度系数     

近红外光纤隔离器的研制

本文介绍近红外波段(波长λ=1.15μm,…λ=1.52μm)光隔离器研制的一些结果。该器件是根据YIG磁性晶体的磁光效应——法拉第旋转效应的原理进行设计的。文章讨论了这种器件研制过程中的一些主要问题,其中包括45°法拉第旋转器的设计、旋转角及器件参数的测量方法、结构小型化及偏振补偿等问题。测试结果表明:正向损耗<2.2dB,反向损耗>25d B(波长λ=1.15μm和λ=1.52μm)。采取一定措施后,性能仍可提高。在光路中(光束光路及光纤光路)使用光隔离器可消除光路系统中反向光对半导体激光源引起的自耦合效应,使光源功率输出、模式、频率等稳定性提高,同时对消除反向波引起的反射噪声有良好效果。光隔离器在光信息传输系统中是一种不可少的器件。     

YbBi∶YIG磁光电流传感器性能研究

采用高温助熔剂熔盐生长出了复合掺杂YbBi∶YIG磁光石榴石单晶,并应用于磁光光纤电流传感器研制.此单晶的比法拉弟旋转为-404deg/cm,磁光优值为25.8deg/dB,饱和磁化场为1400Oe,温度系数为4.2×10-4K-1(室温,λ=1.55μm).与纯YIG相比具有较好的磁光性能,有更高的比法拉弟旋转角和磁光优值以及较小的温度依赖性.用此单晶作为法拉弟转子材料,建立了单光路结构的磁光光纤电流传感器的实验原型,测试了它在测量50Hz交变电流时的性能,测试结果表明传感系统具有较高的精度和灵敏度并有较好的线性关系.     

Y分支光学调制器半波电压与波长和温度相关性研究

建立了Y分支光学调制器半波电压与工作波长和温度的数学模型,其半波电压随工作波长增加而增加、随温度增加而减小。设计实现了一种基于4阶波调制Sagnac干涉仪的半波电压自动测试系统,实现了半波电压的在线连续测量,相对测量精度达到8.5×10~(-6)。用可调激光器光源,改变工作波长和环境温度,分别进行了1310nm和1550nm波段Y分支光学调制器半波电压的实际测量,通过实验测试确定了半波电压与波长和温度的相关性。结果表明,半波电压在这两个测试波段内与波长和温度均呈线性关系,波长相关系数为正,分别约为3.61×10~(-3 )V/nm和9.54×10~(-3 )V/nm;温度相关系数为负,分别约为-1.76×10~(-3 )V/℃和-2.00×10~(-3 )V/℃。实验结果验证了理论模型的正确性。     

YbBi∶YIG磁光电流传感器性能研究

采用高温助熔剂熔盐生长出了复合掺杂YbBi∶YIG磁光石榴石单晶,并应用于磁光光纤电流传感器研制.此单晶的比法拉弟旋转为-404deg/cm,磁光优值为25.8deg/dB,饱和磁化场为1400Oe,温度系数为4.2×10-4K-1(室温,λ=1.55μm).与纯YIG相比具有较好的磁光性能,有更高的比法拉弟旋转角和磁光优值以及较小的温度依赖性.用此单晶作为法拉弟转子材料,建立了单光路结构的磁光光纤电流传感器的实验原型,测试了它在测量50Hz交变电流时的性能,测试结果表明传感系统具有较高的精度和灵敏度并有较好的线性关系.     

高频应用的NiZn铁氧体磁性能影响因素研究

讨论了Fe2O3、Co2O3、烧结温度对高频应用的NiZn铁氧体磁性能的影响,实验研究了Fe2O3、Co2O3和烧结温度对起始磁导率μi、饱和磁感应强度Bs、矫顽力Hc及样品密度d的影响规律.结果发现,当x(Fe2 O3)=45％～49％时,μi从11单调增加到17,材料的B.从176 mT单调增加到223 mT;当w(Co2O3)=0.4％～2.0％时,μi从20单调降低到11;烧结温度为1 040～1 120℃时,μi从12增加到19,Hc从1 543 A/m降低到926 A/m,d从4.97 g/cm3增加到了5.12 g/cm3.最后,得到性能较好的高频应用NiZn铁氧体Ni0.96 Zn0.04Fe1.88O4(添加w(Co2 O3)=0.8％,w(CuO)=3％,1 080℃下烧结),μ1=11,Bs=195 mT,Hc=1 238 A/m,d=4.82 g/cm3.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.