应用于全数字锁相环的时间数字转换器设计

本文将会依据全数字锁相环对时间数字转换器进行设计,其中,全数字锁相环具有粗量化和细量化的不同工作模式。本文旨在提升TDC在细量化工作模式中的测量精度,通过新型的比较器以及解除SR触发器对工作状态的制约关系以达到此目的。最后的仿真结果表明,TDC在粗量化工作模式下能对测量单位能够精确到25纳秒,而细量化工作模式下能够将分辨率降为以皮秒为单位的计量精度。     

一种用于低功耗TDC系统基于D触发器链的TDC使能电路

时间数字转换器(Time-to-Digital Converter, TDC)是全数字锁相环(All-Digital Phase-Locked Loop, ADPLL)中的一个重要模块,其功耗也是ADPLL系统总功耗的主要部分。针对伪差分反相器链结构的TDC,提出了一种功能不受亚稳态影响的基于D触发器链的TDC使能电路,并对TDC的结构进行改进,以降低TDC系统的功耗。采用SMIC 0.18 μm CMOS工艺对电路进行设计和仿真,仿真结果表明,TDC系统的功耗可以降低74%以上。     

ADPLL数学建模与设计实现

全数字锁相环(ADPLL)与混合信号锁相环相比,具有功耗低、面积小、锁定时间短和易于移植等优点.提出了一种新的全数字锁相环结构,建立了该锁相环的系统级数学模型,通过Matlab仿真验证了系统的可行性,并用非线性理论证明了该系统的稳定性.并用建立的系统结构实现了ADPLL的电路版图,电路版图经0.13 μm工艺流片验证,实现了输入为2～25 MHz、输出为25～500 MHz的全数字锁相环电路样品.     

基于环形振荡器的时间数字转换器前期研究进展

随着CMOS工艺的不断发展,时间数字转换器(TDC)的性能不断提升,被广泛应用于医学成像、激光测距、全数字锁相环等领域。基于环形振荡器的时间数字转换器(RO-TDC)具有动态范围大和分辨率高的优点,已成为目前研究热点。介绍了RO-TDC的工作原理,综述了RO-TDC的结构类型和发展现状,总结了RO-TDC的发展趋势。     

一种0.6 V低压两级时间数字转换器

研究了用于超低功耗全数字锁相环(ADPLL)的时间数字转换器(TDC)在近阈值电源电压下的工作原理,提出了一种近阈值电压时间转换器。采用两级量化的TDC,通过时间放大器对量化余量进行放大,实现二次量化。针对TDC低压下的功耗、速度问题,实现了一种增益可扩展的时间放大器,提高了时间分辨率。基于130 nm CMOS工艺的仿真结果表明,两级量化时间数字转换器的分辨率为2.5 ps,动态范围为640 ps,微分非线性(DNL)最大值为0.9 LSB,积分非线性(INL)最大值为2.3 LSB。4倍时间放大器的增益误差为8.2%。     

一种自校准全数字TDC的设计

随着工艺技术的进步,基于CMOS工艺的全数字时间数字转换器(TDC)受到了广泛关注,在测量、测距、计量等领域得到了广泛应用。提出了一种具有自校准算法、结构简单、测量精度稳定的全数字TDC设计方案。可通过专用全数字集成电路设计流程进行快速设计并实现,电路具有面积小、功耗低、成本低、可移植性强等优点。使用Verilog HDL语言进行RTL级描述,运用Design Compiler进行综合,产生门级网表,通过VCS和Hspice进行仿真验证。应用自校准算法后,与现有的TDC设计方法相比,电路的INL得到了明显提高,满足大量程、稳定精度的测量要求。     

一种新型宽频域全数字锁相环的研究与设计

针对传统锁相环研究中电路结构复杂、鉴相精度不高、锁相范围窄等问题,提出一种新型全数字锁相环。与传统锁相环相比,鉴相模块中的时间数字转换电路能将鉴相误差转换为高精度数字信号,一种双边沿触发的数字环路滤波器取代了传统的数字环路滤波器的电路结构,采用可变模分频器来替换传统的固定模分频器。应用EDA技术完成了系统设计,并采用QuartusⅡ软件进行了系统仿真验证。仿真结果表明:该锁相环锁相范围约为800 Hz~1 MHz,系统锁定时间最快为10个左右输入信号周期,且具有锁相范围大、精度高、电路结构简单和易于集成等特点。     

90nm CMOS全数字锁相环设计与实现

设计了一种基于90 nm CMOS工艺的全数字锁相环,重点介绍了几种子模块电路结构,包括鉴频鉴相器、时间数字转换器、数字控制振荡器和新型2阶数字滤波器,分别对其性能进行了分析.仿真测试结果表明,该锁相环具有输出频率高、锁定时间短、抖动小等特点.     

一种基于FPGA的时钟相移时间数字转换器

提出了一种基于Xilinx Virtex-5 FPGA的时钟相移采样(SCS)时间数字转换器(TDC)。利用Virtex5内部的时钟管理模块(CMT)产生16路固定相移的时钟信号,经过16路D触发器对输入信号同时进行采样量化。与传统的基于抽头延迟链结构相比,所用资源更少,性能更加稳定。仿真结果表明,该TDC的精度高于64 ps,占用数字时钟管理(DCM)与锁相环(PLL)资源小于20%,积分非线性(INL)和微分非线性(DNL)都小于0.3 LSB。     

一种应用于图像传感器的全数字锁相环设计

针对图像传感器中传统锁相环(PLL)存在的功耗高、抖动大,以及锁定时长等问题,提出了一种基于计数器架构的低功耗、低噪声、低抖动、快速锁定的分数分频全数字锁相环(ADPLL)设计方法。首先,采用动态调节锁定控制算法来降低回路噪声,缩短锁定时间。其次,设计了一个通用单元来实现数字时间转换器(DTC)和时间数字转换器(TDC)的集成,以降低该部分由于增益不匹配引起的抖动。基于180nm CMOS工艺的仿真结果表明,在1.8V电源电压下,该ADPLL能够实现250MHz~2.8GHz范围的频率输出,锁定时间为1.028μs,当偏移载波频率为1MHz时,相位噪声为-102.249dBc/Hz,均方根抖动为1.7ps。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.