一种带有精确调谐系统的多标准有源RC滤波器

本文介绍了一种低功耗、高线性度、多标准有源RC滤波器,此滤波器带有设计巧妙而精确的调谐系统。该滤波器使用在IEEE 802.11a/b/g (9.5MHz) 和 DVB-H (3MHz, 4MHz)系统中。滤波器使用数字控制多晶硅电阻阵列和锁相环技术的调谐系统,它提供了4%以内的调谐精度。为了节约功耗和减小数字信号的干扰,它在调谐之后可以自动关闭。滤波器带外3阶交调量26dBm。群延时差值为50ns。接收和发送滤波器分别消耗3.4mA和2.3mA, 电源电压为2.85V,调谐系统消耗2mA。此电路采用0.35微米、47GHz锗硅BiCMOS工艺。接收滤波器和发送滤波器的面积（除去校正系统）为0.21-mm2和0.11-mm2。     

应用于无线传感器网络的带片上自动调谐功能的CMOS Gm-C复数滤波器

本文采用0.18um CMOS工艺设计并实现了一个应用于无线传感器网络的带有片上自动调谐功能的Gm-C复数滤波器。该滤波器基于一个五阶切比雪夫低通RLC原型,由电容和差分跨导综合而成。为了实现滤波器中心频率和带宽的精确控制,采用了一个传统锁相环电路来实现片上自动调谐的功能。该滤波器的中心频率为2MHz,带宽2.4MHz。电路的测试结果表明：在1.8V电源电压下,自动调谐电路工作正常,滤波器具有较为精确的中心频率和带宽,实现了超过45dB的镜像抑制,同时带内抖动小于1.2dB。包括片上自动调谐电路在内的整个滤波器电路共有4.9mA的电流消耗。     

片上自动调谐的可编程有源RC滤波器

研制了一款可编程6阶巴特沃斯有源RC滤波器.为提高滤波器中运算放大器的增益带宽积,设计了一种新型的前馈补偿运算放大器.为消除工艺偏差和环境变化对截止频率的影响,设计了一种片上数字控制频率调谐电路,并采用TSMC 0.18 μm CMOS工艺进行了流片.滤波器采用低通滤波结构,测试结果表明,3 dB截止频率为1～32 MHz,步进1 MHz,带内增益0 dB,带内纹波0.8 dB,2倍带宽处带外抑制不小于24 dBc,5倍带宽处带外抑制不小于68 dBc,滤波器等效输入噪声为340 nV/√Hz@1MHz,调谐误差为±3％.滤波器裸芯片面积0.87 mm×1.05 mm.采用1.8V电源电压,滤波器整体功耗小于20 mW.     

应用于直接变频架构直播卫星调谐器中的具有宽调谐范围的连续时间低通滤波器

本文用0.35微米锗硅BiCMOS工艺设计了七阶巴特沃兹跨导电容低通滤波器及其片上自动调谐电路,该低通滤波器适用于采用直接变频架构的直播卫星调谐器。该滤波器的-3dB带宽截止频率具有从4MHz到40MHz的宽调谐范围。成功实现了一种新颖的片上自动调谐方案,用来调谐和锁定滤波器的-3dB带宽截止频率。测试结果表明,该滤波器具有-0.5dB的通带电压增益,+/- 5%的带宽精度,30nV/Hz1/2的等效输入噪声,-3dBVrms 通带电压三阶交调点,27dBVrms 阻带电压三阶交调点。I/Q正交两路滤波器及其调谐电路采用5V电源,在滤波器的-3dB带宽截止频率为20MHz的情况下,消耗电流13毫安,占用芯片面积0.5mm2。     

一种用于IR-UWB的数控环形振荡器设计

设计了一个应用于超宽带脉冲无线电（IR-UWB）通信系统的数控环形振荡器（DCRO）.DCRO采用3调谐,包括电压粗调谐和开关变容管精调谐,逐级提高调谐精度.提出了一种新型延时单元,采用多环路结构,提高了环形振荡器的振荡频率,降低了功耗.设计采用CSMC 0.18μm互补金属氧化物半导体工艺,电源电压1.8V,使用SpectreRF仿真验证,数控环形振荡器的调谐范围为3～8.6GHz,调谐精度为2MHz,当工作频率在8.6GHz时,偏离主频10MHz处相位噪声为-112.4dBc/Hz,功耗为20mW.     

一种用于WLAN收发器带有自动调谐系统的低功耗Gm-C滤波器

本文用0.35um CMOS工艺实现了一个用于WLAN收发器的六阶连续调谐巴特沃斯Gm-C低通滤波器。滤波器设计中采用了内部节点压缩技术来提高动态范围,还对滤波器的部分结构进行了有效的优化,极大地减小芯片的功耗和面积。测试结果显示滤波器的动态范围为77.5dB,群延时波纹小于16.3ns,截止频率精确度在3%以内,滤波器的带内三阶交调量（IIP3）为0dBm。在电源电压2.85V时,包括调谐电路在内的整个滤波器消耗电流仅为1.42mA（5MHz的截止频率）或2.81mA(10MHz的截止频率),而且版图面积仅为0.175mm2.     

一种带有精准调谐结构的有源RC低通滤波器的设计

提出了一种带有精准调谐结构的有源RC低通滤波器的设计方案,其截止频率为5MHz,并在0.18μm标准CMOS工艺线上流片得到验证.调谐精度达到（-1.24%, +2.16%) ,测试中得到验证.调谐系统所占芯片面积仅为主滤波器面积的1/4.调谐系统完成调谐功能后会自动关闭,降低了功耗以及对主滤波器的串扰.以50Ω作为源阻抗,滤波器带内3阶交调量（IIP3）好于16.1dBm.滤波器输入参考噪声为36μVrms.滤波器群延迟时间波动测试结果为24ns.滤波器功耗为3.6mW.带有这种调谐结构的滤波器容易被实现,可以用于很多无线低中频应用中,例如全球定位系统、全球通和码分多址等芯片系统中.     

一种DSP用数模混合型锁相环设计

提出了一种用于DSP的高性能低噪声高速电荷泵锁相环电路。其鉴频鉴相器模块具有高速、无死区等特点;电荷泵模块在提高开关速度的基础上改进了拓扑结构,使充放电电流的路径深度相同,更好地实现了匹配。为了达到宽调谐范围的目的,电荷泵模块采用1.8V电源电压,而压控振荡器模块采用3.3V,这样可充分利用电荷泵的输出电压范围实现宽调谐。电路设计基于0.18μm1P6MCMOS工艺,结果表明,锁相环电路功耗为34mW,中心频率100MHz,频率输出范围50MHz～400MHz,各项性能满足设计指标要求,并使芯片噪声、速度和功耗最优。各模块电路可应用于其他相应的功能电路,对相关领域的设计具有一定的参考意义。     

一种带有精准调谐结构的有源RC低通滤波器的设计

提出了一种带有精准调谐结构的有源RC低通滤波器的设计方案,其截止频率为5MHz,并在0.18μm标准CMOS工艺线上流片得到验证.调谐精度达到(-1.24%,+2.16%),测试中得到验证.调谐系统所占芯片面积仅为主滤波器面积的1/4.调谐系统完成调谐功能后会自动关闭,降低了功耗以及对主滤波器的串扰.以50Ω作为源阻抗,滤波器带内3阶交调量(IIP3)好于16.1dBm.滤波器输入参考噪声为36μVrms.滤波器群延迟时间波动测试结果为24ns.滤波器功耗为3.6mW.带有这种调谐结构的滤波器容易被实现,可以用于很多无线低中频应用中,例如全球定位系统、全球通和码分多址等芯片系统中.     

应用于直接变频结构中的高线性度低功耗CMMB调谐器的基带电路

本文用0.35微米锗硅BiCMOS工艺设计了用于中国多媒体移动电视的模拟基带电路,此接收机芯片采用直接下变频结构。此基带电路使用了带有精确调谐系统的高线形度8阶切比雪夫低通滤波器,测试结果表明此滤波器有0.5dB的带内纹波,带宽调谐系统的误差在4%以内。在截止频率为4MHz的情况下对6MHz的信号有35dB的衰减。基带部分使用抽电流型的可变增益放大器,提供至少40dB的增益,并且带有出色的温度补偿。此基带电路的带外三阶交调量（OIP3）为25.5dBm,电源电压2.8V,总电流为16.4mA,芯片面积为1.1mm2。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.