C波段小型化低相噪全相参频率综合器

提出了一种小型低相噪、低杂散的C波段全相参频率综合器设计方案。基带信号由DDS芯片产生,通过对环路滤波器和电路印制板的优化设计改善相噪和杂散性能,并与PLL输出的C波段点频信号进行上变频,得到所需信号。介绍了实现原理、相位噪声模型及设计方法。测试结果表明,在7.8GHz处,频综相位噪声≤-103dBc/Hz@100kHz,杂波抑制≤-61dBc。     

低相噪全相参毫米波频率合成源研究

研制出一种小步进全相参毫米波频率合成源.本振部分,对直接数字式合成频率、参考分频比和环路分频比进行三重调节,抑制了直接数字频率合成的杂散,提高了频率分辨率;发射部分,采用二次混频电路,避免了调谐电压预置,简化了电路,并保证了发射信号和本振信号相参.该系统输出在Ka频段,带宽400MHz,步进<1MHz.测试相噪<-90dBc/Hz@10kHz、-97dBc/Hz@100kHz,杂散为-60dBc,跳频时间<15us.     

L波段小步进频率合成器的设计

采用了锁相环(PLL)结合直接数字频率合成(DDS)的方法实现L波段小步进频率合成器,分析了此种频率合成器的相位噪声和杂散指标。介绍了具体的电路设计过程。实验测试表明,实现的L波段频率合成器结合了锁相环式和直接数字式频率合成的优点,步进间隔1 kHz,相位噪声在10 kHz处可达-98 dBc/Hz,杂散抑制-70 dBc,具有相噪低、杂散抑制好、步进小等特点。     

高频谱纯度小步进频率合成器的设计与实现

讨论了一种杂散抑制高,频率步进小及相位噪声低的频率合成器的设计方法。设计采用混合式频率合成技术,研制实现了S波段频率合成器,实验结果表明,该频率合成器输出信号频率步进100 Hz,相位噪声优于-115dBc/Hz@10kHz,杂散抑制大于80dBc,跳频时间140μs。     

Ka波段频率合成器设计

提出了一种Ka波段低杂散、捷变频频率合成器设计方案。该方案采用直接数字合成(DDS)+直接上变频的频率合成模式,DDS1产生360~600 MHz低杂散中频信号,DDS2产生波形信号。经过4次上变频、分段滤波、放大后,该方案实现了宽带、低杂散、捷变频频率合成器的设计,为系统提供本振信号、激励信号等。根据设计方案,制作了实物。实测该频率合成器输出杂散小于-75 dBc,频率切换时间小于200 ns,带宽2 GHz,步进1 MHz,35 GHz载波处相噪约-95 dBc/Hz@1kHz。该频率合成器不仅可广泛应用于雷达、对抗、通信等领域,也为其他类似需求频率合成器提供了参考。     

C波段宽带低噪声频率源的研制

介绍了利用锁相环和混频技术,实现C波段低相噪跳频源的方案,该方案通过两个环路同时实现跳频及混频,步进36MHz,输出频率4428~5220MHz,具有低相位噪声,低杂散等特点。和以往锁相频率合成的不同之处在于:以往混频时采用主环信号4428~5220MHz作为混频器的RF端,而本方案为可以充分抑制辅环杂散,通过放大器将主环信号放大作为混频器的本振LO端。测试结果表明达到系统对项目的指标要求,该频率合成方案是可行的。     

一种应用于全相参雷达的毫米波频综设计

结合DDS、PLL、倍频及混频技术,研制了一种低相噪和低杂散的毫米波全相参雷达频综. 主要包括一个毫米波源、一个线性调频信号发生器以及为接收机提供第二本振的微波源,整个源的相参时钟采用外接的一个100 MHz恒温晶振提供. 分析和估算了毫米波信号的相位噪声和杂散. 测试结果表明信号输出频率范围为34.855~34.865 GHz,步进100 KHz,输出功率高于16 dBm, 相位噪声大约为-92 dBc/Hz@10 KHz.     

PLL驱动DDS的低相噪小步进LFM信号源设计

介绍了一种低相噪线性调频(LFM)雷达信号源的产生和实现方案。通过分析DDS输出信号频谱和杂散,采用HMC704控制VCO的方法设计了1 GHz的锁相环路(PLL)作为DDS的时钟驱动电路,并对环路滤波器和AD9910硬件电路优化设计改善杂散和相噪性能。通过计算寄存器参数和分析SPI总线时序,利用FPGA对DDS和PLL高速配置。最后给出了系统实物图和测试方法,实测结果表明:该线性调频源输出幅度大于-3dBm,频率步进为1kHz,相位噪声优于-103dBc/Hz@1kHz,各项指标满足实际工程要求。     

高性能X波段直接式频综的设计

介绍一种X波段直接式频综的设计方案,对其输出杂散进行分析,并给出研制结果,在10GHz的输出频率上,偏离载频1kHz处的相噪为－108dBc/Hz,杂散优于－70dBc,跳频时间小于0．7μs,可捷变40个点。     

一种高频谱纯度的C频段宽带频率合成器设计

为了提高频综的频谱纯度,提出了一种新型多级子谐波混频锁相环的设计方法,研制了一款超低相噪频综。介绍了该频综的设计方案,分析了关键技术,仿真和论证了相位噪声和杂散抑制等主要指标,最后对该频综进行了研制和实际测试。测试结果如下：工作频率为4 500~7 600 MHz,频率步进小于1 kHz,相位噪声优于-123 dBc/Hz@25 kHz,频率切换速度小于75 μs,杂散抑制大于70 dB,均满足设计要求,设计方案比较合理可行。采用该方法设计的频综具有小步进、低相噪、换频速度快、低杂散等特点,可用于高性能电子战接收机中,具有广阔的应用前景。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.