水热法制备PLZT多元铁电薄膜的研究

研究了在水热条件下制备ＰＬＺＴ（８／６５／３５）多元铁电薄膜的优化工艺条件。讨论了反应温度,反应历程,反应时间等不同工艺条件对ＰＬＺＴ多元铁电薄膜结构、结晶取向的影响。结果表明,采用两步法合成工艺能够在Ｔｉ基片上制备出纯钙钛矿相结构,粒径为１μｍ,薄膜厚度为５μｍ介电数为ε＝４５０的ＰＬＺＴ（８／６５／３５）多元铁电薄膜。     

工艺参数对Sol—Gel法制备的PLZT铁电薄膜结构和性能的影响

用Ｓｏｌ－Ｇｅｌ法在镀铂硅片上制备了具有良好铁电性能的ＰＬＺＴ薄膜，研究了影响薄膜显微结构与电学性能的工艺因素，适宜的前体溶液浓度和水解度，低的热处理变温速率对防止薄电裂有利，ＰｂＴｉＯ３过渡怪改善ＰＬＺＴ薄膜的形核过程，使之纯钙钛矿结晶相，ＰｂＴｉＯ３过渡层及薄膜内细小的晶粒和空间荷电使薄膜剩余极化强度下降，矫顽场强上上升。     

热处理对无机盐-螯合-凝胶法制备的PMN-PT弛豫铁电膜钙钛矿相形成的作用

研究了PMN－PT薄膜的无机盐－螯合－凝胶法制备，分析和讨论了薄膜热处理工艺对薄膜相结构形成的影响，探讨制备近全钙钛矿相的PMN－PT弛豫铁电薄膜的最佳工艺。     

溶胶—凝胶法制备（Pb,La）TiO3铁电陶瓷薄膜的研究

用红外光谱研究了溶胶－凝胶法制备ＰＬＴ铁电陶瓷薄膜的成胶机理，研究了前体溶液的稳定性及多次覆膜工艺。     

PZT铁电薄膜结构及疲劳特性研究

铁电薄膜的电疲劳是铁电存储器等应用的主要障碍，我们用Ｓｏｌ－ｇｅｌ（溶胶－凝胶）方法制备ＰＺＴ铁电薄膜，对其结构和疲劳特性的研究表明，组分及工艺因素合影响薄膜的结构，具有玫瑰花形的ＰＺＴ薄膜内部存在较多的带电缺陷，在外电场作用下１０＾６周期后出现疲劳，改进组分配方或改进热处理工艺，使薄膜为纯钙钛矿结构，薄膜的寿命可超过１０＾１１周期。     

新型PST铁电薄膜的制备及其电性能研究

PST铁电薄膜是一种具有优良铁电、热释电和介电等性能的铁电材料.该材料在红外探测器、红外焦平面阵列、热成像器件、非易失性铁电存储器和大容量电容器等方面具有广泛的应用.PST铁电薄膜的制备方法多种多样,各具优缺点,不同的制备工艺对薄膜的性能有影响.叙述了PST铁电薄膜的制备技术、电性能和在热释电红外探测器方面的应用.     

快速热处理对PZT薄膜的微结构及电性能的影响

采用改进的溶胶一凝胶技术,在Ｐｔ／Ｔｉ／ＴｉＯ２／ＳｉＯ２／Ｓｉ（１００）基片上制备了太电ＰＺＴ薄膜,用ＸＲＤ和ＡＦＭ技术分析了不同热处理工艺条件下ＰＺＴ薄膜的微观形貌变化及相结构演化,系统测试了ＰＺＴ薄膜的铁电性能。工艺－结构－性能研究结果表明：快速热处理工艺（ＲＴＡ）有利于ＰＺＴ薄膜保持较低的漏电流密度,热处理温度是影响晶粒大小的主要因素,而保温时间则对ＰＺＴ薄膜的致密性、晶粒均匀度和晶界结合     

择优取向铁电薄膜制备影响因素的分析

制备性能优良、高度择优取向或外延生长、成分均匀、结构可控的晶态铁电薄膜材料，是发展铁电薄膜应用的基础。随着铁电薄膜在微电子学，光电子学和集成光学等领域的应用不断扩大，如何制备高性能的铁电薄膜材料一直称为人们关注的热点。对择优取向铁电薄膜材料制备技术中的主要影响因素进行了分析，希望能为从事此方面工作的研究者提供一定的借鉴。     

溶胶－凝胶方法制备PZT铁电薄膜材料的研究

本文介绍了用ｓｏｌ－ｇｅｌ方法制备ＰＺＴ铁电薄膜的工艺，并指出采用快速热处理工艺能有效地防止薄膜开裂。比较了用３种不同锆盐原料制备的ＰＺＴ薄膜的性能。实验结果表明，用无机盐硝酸锆制备的ＰＺＴ铁电薄膜的性能最好。     

超级电容器高比容（RuO_2/SnO_2）·nH_2O复合薄膜电极的研究

采用电沉积工艺制备超级电容器用钽基（RuO2/SnO2）.nH2O复合薄膜,研究了初始沉积液中Sn2＋与Ru3＋浓度比以及热处理对制备（RuO2/SnO2）.nH2O复合薄膜性能的影响。借助扫描电镜、X射线衍射仪、红外光谱对薄膜的形貌和物相进行分析,用循环伏安法（CV）对该复合薄膜电容特性进行了测量。结果表明,以沉积液中Sn2＋与Ru3＋浓度比为2∶1时电沉积出的样品,在温度为300℃、热处理2.5h后所制备出的复合电极薄膜材料的比电容达到385F/g。     

Preparation of Pb0.98La0.02(Zr0.65Ti0.35)O3 films and their fine patterning

The photosensitive lanthanum-doped lead zirconate titanate (PLZT) gel films were prepared by chemical modification with acetylacetone (AcAcH), and their fourier transform infrared (FT-IR) spectra and ultraviolet visible (UV-Vis) spectra were measured. The results show that the chelate rings of AcAcH with Ti or Zr are formed in the PLZT gel films. With irradiation of UV light, the chelate rings are photolyzed, and lead to a change of the solubility of the PLZT gel films in methanol. Transmission electron microscope (TEM) observations show that the perovskite phase is crystallized in PLZT thin film after heat treatment at 700 °C, whose grain sizes are less than or equal to 60 nm. The PLZT thin films exhibited hysteresis loops and good fatigue properties.     

铅过量PLZT铁电薄膜的制备及其电学性质研究

采用Sol Gel法 ,在Pt TiO2 Si基片上制备了具有不同铅过量 (0— 2 0mol% )的PLZT铁电薄膜。分析了薄膜的晶相结构 ,研究了铅过量对PLZT铁电薄膜的介电性能和铁电性能的影响。结果表明 ,各薄膜均具有钙钛矿型结构 ,且各薄膜均呈 (110 )择优取向。PLZT铁电薄膜的介电性能和铁电性能随铅过量的变化而改变。铅过量为 10mol%的薄膜具有最佳的的介电性能和铁电性能。     

Phase evolution in solution deposited Pb-deficient PLZT thin films

Initial crystallization of Pb-deficient, lanthanum modified lead zirconate titanate (PLZT) layers followed by post-crystallization phase conversion can be used to obtain high quality PLZT thin films. However, phase evolution in Pb-deficient PLZT thin films is not well understood. To characterize phase evolution in these films, we developed a new in situ, high-temperature X-ray diffraction (XRD) measurement approach for slow heating rates. The well-characterized Pb-excess PLZT composition was used for comparison and to validate the new XRD setup described herein. During crystallization of Pb-deficient thin films, a Pb-rich/La-poor perovskite phase and Pb-poor/La-rich fluorite phase were observed to form simultaneously. The fluorite phase was observed to partially transform into a secondary perovskite phase at higher temperatures. The results obtained are discussed in view of the current understanding of phase evolution in these materials. The details of the new in situ XRD technique are also presented.     

Linear and nonlinear optical properties of RF sputtered (Pb,La)(Zr,Ti)O<Subscript>3</Subscript> ferroelectric thin films

Linear and nonlinear optical properties of (Pb,La)(Zr,Ti)O₃ (PLZT) ferroelectric thin films were presented in this paper. The PLZT ferroelectric thin films have been in situ grown on quartz substrates by radio-frequency (RF) magnetron sputtering at 650 °C. Their crystalline structure and surface morphologies were examined by X-ray diffraction and atomic force microscopy, respectively. It can be found that the PLZT thin films exhibit well-crystallized perovskite structure and good surface morphology. The fundamental optical constants (the band gap energy, linear refractive index, and linear absorption coefficient) were obtained through the optical transmittance measurements. A Z-scan technique was used to investigate the optical nonlinearity of the PLZT thin films on quartz substrates. The films display the strong third-order nonlinear optical effect. A large and negative nonlinear refractive index n ₂ is determined to be 1.21 × 10⁻⁶ esu for the PLZT thin films. All results show that the PLZT ferroelectric thin films have potential applications in optical limiting, switching, and modulated-type optical devices.     

Sputtering preparation of ferroelectric PLZT thin films and their optical applications

Preparation of epitaxial PLZT thin films on sapphire has been investigated, and excellent ferroelectric properties such as piezoelectricity and electrooptic effect with high transparency were obtained in thin films. Moreover, a preparation process was developed involving the multitarget sputtering method, and strict control of film composition and epitaxial growth with the buffer layer of graded composition were performed. Using these PLZT thin films, some optical applications, including an acoustooptic deflector and an electrooptic guided-light switch, are shown.     

透明PLZT电光陶瓷材料的制备及应用研究进展

ＰＬＺＴ电光材料（陶瓷和薄膜）具有很好的秀明性和大的电光效应，可广泛应用于光电子学、集成电学等领域。本文综述了透明ＰＬＺＴ电光陶瓷、薄膜的制备工艺及应用，分析了其研究现状，简单论述了其发展趋势。     

Effects of oxygen partial pressure on lead content of PLZT thin films produced by excimer laser deposition

Excimer laser ablation has been used to produce thin films of lanthanum-modified lead zirconate titanate (PLZT), or Pb_1−xLa_x(Zr_1−yTi_y)_1−x/4O₃. PLZT is an interesting class of materials since it has a wide range of compositionally dependent electro-optical properties and strong non-linear optical characteristics. PLZT thin films of 7/0/100, 28/0/100 and 0/0/100 compositions have been deposited onto crystalline Si100 and amorphous fused silica substrates. Effects of oxygen backfill pressure on the Pb:(Ti + La) ratios were investigated. The results indicate that controlling the oxygen backfill pressure during laser deposition strongly influences the stoichiometry and crystal structure of PLZT thin films.     

A study of vacancy-related defects in (Pb,La)(Zr,Ti)O(3) thin films using positron annihilation

The formation of vacancy-type defects in La-doped lead zirconate titanate (PLZT) thin films (Zr/Ti=20/80) was studied as a function of lanthanum doping and after cooling in an oxygen-reduced ambient. The changes in the Doppler-broadening S parameter are consistent with the progressive introduction of Pb-vacancies upon La-doping. Cooling of PLZT thin films with 0 and 10% La doping in 10(-5) Torr oxygen partial pressure after growth exhibits an increase in the density of vacancy-type defects compared to films cooled in 760 Torr. It is proposed that the defects formed are likely cation-oxygen vacancy complexes.     

Preparation and characterization of highly (1 1 1)-oriented (Pb,La)(Zr,Ti)O3 thin films by sol-gel processing

Lanthanum modified lead zirconate titanate (Pb_0.91La_0.09)(Zr_0.65Ti_0.35)O₃ (PLZT) ferroelectric thin films were grown on Pt/Ti/SiO₂/Si(1 0 0) and fused quartz substrates using a sol-gel method with rapid thermal annealing processing. The results showed that the highly (1 1 1)-oriented pervoskite PLZT thin film growth on Pt/Ti/SiO₂/Si(1 0 0) substrates. The electrical measurements were conducted on PLZT films in metal-ferroelectric-metal capacitor configuration. The PLZT thin films annealed at 600 °C showed well-saturated hysteresis loops with remanent polarization and coercive electric field values were 10.3 μC/cm² and 36 kV/cm, respectively, at an applied field of 300 kV/cm. At 100 kHz, the dielectric constant and dielectric loss of the film are 682 and 0.021, respectively. The PLZT thin film on fused quartz substrate, annealed at 600 °C, exhibited good optical transmittance, the band gap of optical direct transitions is 3.89 eV.     

RF sputtered PLZT thin film on Pt/Ti electrode

PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200°C or below crystallizes to a perovskite phase after annealing treatment at 550°C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600°C to 650°C for 1 h in O₂. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical remanent polarization value of 220 mC/m² and coercive field strength of 6.5 MV/m