InP/InGaAs SHBT器件自对准结构设计和工艺实现

从InP湿法腐蚀各向异性特性实验出发,利用传统的基极-发射极自对准工艺和改进的基极-发射极工艺制作了两种InP/InGaAs SHBT自对准结构,比较了两种自对准工艺对减小基极与发射极台面间距的效果,为制作高频率特性InP/InGaAs SHBT提供了工艺途径.     

InP/InGaAs SHBT器件自对准结构设计和工艺实现

从InP湿法腐蚀各向异性特性实验出发,利用传统的基极-发射极自对准工艺和改进的基极-发射极工艺制作了两种InP/InGaAs SHBT自对准结构,比较了两种自对准工艺对减小基极与发射极台面间距的效果,为制作高频率特性InP/InGaAs SHBT提供了工艺途径.     

InP/InGaAs/InP双异质结双极晶体管技术研究

介绍了InP/InGaAs/InP双异质结双极晶体管(DHBT)材料生长、器件结构与设计、制作工艺和性能测试以及在振荡器中的应用等方面的研究.采用发射极-基极自对准工艺制作了InP/InGaAs/InP DHBT器件,发射极尺寸为1.5μm×10μm的器件小电流直流增益β约25,集电极-发射极击穿电压BVCEO≥10V,截止频率,ft和最高振荡频率,fmax分别为50和55GHz;     

InP/InGaAs/InP双异质结双极晶体管技术研究

介绍了InP/InGaAs/InP双异质结双极晶体管(DHBT)材料生长、器件结构与设计、制作工艺和性能测试以及在振荡器中的应用等方面的研究.采用发射极-基极自对准工艺制作了InP/InGaAs/InP DHBT器件,发射极尺寸为1.5μm×10μm的器件小电流直流增益β约25,集电极-发射极击穿电压BVCEO≥10V,截止频率,ft和最高振荡频率,fmax分别为50和55GHz;     

基于InGaAs/InP SHBT技术的10 Gb/s单片跨阻放大器研究

介绍了采用传统的三台面工艺,利用湿法选择腐蚀形成发射极.基极自对准的InGaAs/InP单异质结双极性晶体管(SHBT)技术实现传输速率为10 Gb/s跨阻放大器.其中SHBT获得了在Ic=10 mA,Vce=2 V时,fT和fmax分别为60、75 GHz,电流密度为100 kA/cm2,击穿电压大于3 V;跨阻放大器的跨阻增益为58 dBΩ,灵敏度为-23 dBm,3 dB带宽为8.2 GHz.该单片跨阻放大器可广泛应用于光纤通信.     

一种改进了碰撞电离的超高速InP基SHBT SDD模型

从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型. 同时针对自有工艺和器件特性,采用SDD (symbolically defined device）技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型. 模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性.     

fT=140GHz,fmax=200GHz的超高速InP DHBT

InP/InGaAs/InP DHBT具有频带宽、电流驱动能力强、线性好、相位噪声低和阈值电压一致性好等优点成为研究热点。通过优化外延材料结构设计和采用四元InGaAsP缓变层消除集电结电流阻塞效应;改进发射极-基极自对准工艺和集电区台面侧向腐蚀工艺,降低Rb和Cbc乘积;优化PI钝化工艺和空气桥互联等工艺,实现了发射极面积为2μm×10μm的自对准InP/InGaAs/InP DHBT器件,其直流增益β约为25,击穿电压BVCEO≥7 V@10μA,在VCE=4 V,Ic=10 mA下,截止频率fT=140 GHz,最高振荡频率fmax=200 GHz,优于同一外延片上的非自对准InP DHB器件,该器件将可应用于高速光通信和微波毫米波通信。     

一种改进了碰撞电离的超高速InP基SHBT SDD模型

从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系,通过加入表示温度的参数和简化电场计算,得到一种改进的碰撞电离模型.同时针对自有工艺和器件特性,采用SDD(symbolically defined device)技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型.模型内嵌入HP-ADS中仿真并与测试结果进行比较,准确地拟合了InP/InGaAs SHBT的器件特性.     

基极微空气桥和发射极空气桥的InP/InGaAs HBT

报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT).由于基极微空气桥和发射极空气桥结构有效地减小了寄生,发射极尺寸为2 μm×12.5 μm的InP HBT的截止频率达到了178GHz.这种器件对高速低功耗的应用非常关键,例如OEIC接收机以及模拟、数字转换器.     

基极微空气桥和发射极空气桥的InP/InGaAs HBT

报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT).由于基极微空气桥和发射极空气桥结构有效地减小了寄生,发射极尺寸为2 μm×12.5 μm的InP HBT的截止频率达到了178GHz.这种器件对高速低功耗的应用非常关键,例如OEIC接收机以及模拟、数字转换器.     

Ohmic contact formation in palladium-based metallizations to n-Type InP

Two Pd-based metallizations have been systematically studied, i.e., Au/Ge/Pd and Pd/Ge contacts to n-type InP, in an attempt to better understand the role of the metallization constituents in forming ohmic contacts. Ohmic contacts were obtained with minimum specific resistances of 2.5 × 10⁻⁶ Ω-cm² and 4.2 × 10⁻⁶ Ω-cm² for the Au/Ge/Pd and the Pd/Ge contacts, respectively. The annealing regime for ohmic contact formation is 300-375°C for the Au/Ge/Pd/InP system and 350-450°C for the Pd/GelnP system. Palladium, in both cases, reacts with InP to form an amorphous layer and then an epitaxial layer at low temperatures, providing good metallization adhesion to InP substrates and improved contact morphology. Ohmic contact formation in both contacts is attributed to Ge doping, based on the solid state reaction-driven decomposition of an epitaxial layer at the metallization/InP interface, producing a very thin, heavily doped InP layer. Gold appears to be responsible for the difference in contact resistance in the two systems. It is postulated that Au reacts strongly with In to form Au-In compounds, creating additional In site vacancies in the InP surface region (relative to the Au-free metallization), thereby enhancing Ge doping of the InP surface and lowering the contact resistance. Both contacts degrade and ultimately become Schottky barriers again if over annealed, due to consumption of additional InP, which destroys the heavily doped InP layer.     

Pd/Zn/Pd/Au ohmic contacts to ρ-Type InP

Low resistance ohmic contacts (ρ_c = 7 x 10^-5 Ω-cm ² ) have been fabricated to Zn-doped p-type InP using an annealed Pd/Zn/Pd/Au metallization. Palladium reacts with InP at low temperatures to form a Pd₂InP ternary phase, which is initially amorphous but crystallizes and grows epitaxially on InP. Zinc reacts with some of the overlying Pd to form PdZn (≅250° C), which decomposes at 400-425° C to form PdP₂, freeing up Zn to diffuse into Au as well as InP. The contact resistance reaches a minimum as the decomposition reaction takes place. The resultant ohmic contact is laterally uniform and consists of epitaxial Pd₂InP adjacent to InP, followed by a thin layer of PdP₂ and then the outer Au layer. Further annealing leads to a breakdown of the contact structure,i.e. decomposition of Pd₂InP, and an increase in contact resistance.     

Reduction of the surface recombination current in InGaAs/InPpseudo-heterojunction bipolar transistors using a thin InP passivationlayer

In an InGaAs/InP pseudo-heterojunction bipolar transistor (PHBT) with InP passivation, regions from the emitter mesa edge to the base contact are protected by a thin InP barrier layer. By using such a passivation, the surface recombination current is effectively suppressed. The DC current gain obtained for such a PHBT is as high as 455, compared to a maximum value of 240 for a normally passivated PHBT. The current gain is also found to be independent of the perimeter-to-area ratio of the emitter mesa as a result of the passivation     

Rapid thermal alloyed ohmic contact on inp

The results of a study of the electrical and metallurgical properties of thin metallic layers deposited on InP for use as an ohmic contact are presented. A rapid thermal annealing system was used to alloy AuGe/Ni/Au contacts ton-type ion implanted InP. Rutherford backscattering and contact resistivity measurement were used to evaluate the structural and electrical characteristics of these rapid thermal alloyed thin films. Varying degrees of mixing between the metals and the semiconductor were found depending on the temperature and temperature-time cycle. These results were compared to furnace and graphite strip-heater alloying techniques. A correlation between the interface structure and the contact resistance was found. Temperatures between 430 and 450° C and alloying time of 2 sec have produced the best electrical results, with specific contact resistance as low as 2*10^?7 Ω cm² on semi-insulating InP which was Siimplanted with a peak concentration about 2*10¹⁸ cm^?3. The optimum alloy temperature is marked by the onset of substantial wrinkling of the contact surface, whereas essentially smooth surfaces are obtained at temperatures below optimum. The depth of the alloyed ohmic contact is controlled by the time of heating and could be less than 1000Å.     

InAlAs/InGaAs/InP HEMT欧姆接触研究

应用Au/Ge/Ni系金属在InAlAs/InGaAs/InP HEMT上成功制作了良好的合金欧姆接触。采用WN和Ti双扩散阻挡层工艺优化欧姆接触,在样品上获得了最低9.01×10-8Ω.cm2的比接触电阻,对应的欧姆接触电阻为0.029Ω.mm。同时,在模拟后续工艺环境的20min250°C热处理后,器件的欧姆接触性能无显著变化,表明其具有一定的温度稳定性。     

InP/InGaAs HBTs with n+-InP contacting layers grown byMOMBE using SiBr4

InP/InGaAs heterojunction bipolar transistors (HBTs) with low resistance, nonalloyed TiPtAu contacts on n⁺-InP emitter and collector contacting layers have been demonstrated with excellent DC characteristics. A specific contact resistance of 5.42×10^-8 Ω·cm², which, to the best of our knowledge, is the lowest reported for TiPtAu on n-InP, has been measured on InP doped n=6.0×10¹⁹ cm^-3 using SiBr₄. This low contact resistance makes TiPtAu contacts on n-InP viable for InP/InGaAs HBTs     

Low-temperature Pd bonding of III-V semiconductors

The authors have developed a low-temperature Pd bonding technique for integrating InP structures onto GaAs substrates. The solid phase reactions of Pd with both InP and GaAs allows Pd to be used as a sandwiched ohmic contact between two dissimilar materials. The InP-Pd-GaAs interfaces have been characterised by scanning electron microscopy, optical reflectance, and electrical transport measurement     

台面型InP/InGaAs PIN光伏探测器的p-InP低阻欧姆接触

研究了电子束蒸发淀积的非合金膜系Au/Pt/Ti/p-InP(2×1018cm-3)接触的物理特性,通过450℃、4 min的快速退火,获得了欧姆接触,其比接触电阻为7.3×10-5 Wcm2.接触电极退火后,采用离子溅射法淀积加厚电极Cr/Au.利用俄歇电子能谱(AES)进行深度剖面分析,表明Pt层能够相对有效地阻挡...     

AuGe/Au ohmic contacts to n-type InP by hot-plate alloying

The authors report on the fabrication and characteristics of AuGe/Au ohmic contacts to ion-implanted n-type InP. The contacts have smooth surface morphology, excellent adhesion and good contact resistance uniformity. For samples with carrier concentrations of 1.7 * 10/sup 17/ and 1.6 * 10/sup 18/ cm/sup -3/, contact resistances of 0.07 and 0.03 Omega mm, respectively, have been obtained. These values are among the lowest contact resistances reported for n-type InP.<>