ICP刻蚀技术与模型

从ICP刻蚀装置、ICP刻蚀技术及模拟模型以及可用于ICP刻蚀模拟的CAD工具研究现状等几方面,对ICP刻蚀过程中所涉及的原理和模型做了较为详细的介绍和比较,以使对ICP刻蚀技术及模型有一个较为全面的认识。     

ICP刻蚀技术在MEMS器件制作中的应用

简单介绍了ICP刻蚀系统和刻蚀原理。通过实验分析了ICP刻蚀SiO2和Cr时,刻蚀速率随相关工艺参数变化而变化的几点规律。同时给出了用ICP刻蚀出的MEMS传感器Si基腔的表面形貌图和Cr电阻的显微镜照片。     

碲镉汞器件接触孔的ICP刻蚀工艺研究

介绍了ICP等离子体刻蚀技术的工作原理和主要工艺参数,阐述了碲镉汞器件接触孔ICP刻蚀工艺的特点和技术要求。通过一系列实验和分析,最终优化并确定了ICP刻蚀碲镉汞材料接触孔的工艺参数,获得了良好的刻蚀形貌和器件性能。     

ICP技术在化合物半导体器件制备中的应用

介绍了ICP刻蚀工艺技术原理和在化合物半导体器件制备中的应用,包括ICP刻蚀技术中的低温等离子体的形成机理、等离子体与固体表面的相互作用等,并对影响ICP刻蚀结果的因素进行了分析.研究了不同的工艺气体配比、腔体工作压力、ICP源功率和射频源功率对刻蚀的影响,并初步得到了一种稳定、刻蚀表面清洁光滑、图形轮廓良好、均匀性较好和刻蚀速率较高的干法刻蚀工艺.     

基于ICP的硅高深宽比沟槽刻蚀技术

介绍了电感耦合等离子体(ICP)刻蚀技术的基本概念。结合英国STS公司的STS multiplex ICP system刻蚀机,介绍了刻蚀机原理及刻蚀过程。对硅深槽刻蚀技术进行了分析,对其中Footing效应、Lag效应和侧壁光滑问题提出了优化方案,最后在实验的基础上得出了能够刻蚀出高质量硅深沟槽的刻蚀参数。     

Cl2/Ar/BCl3ICP刻蚀AlGaN的研究

感应耦合等离子体（ICP）刻蚀在AlGaN基紫外探测器台面制作中起着重要作用。在对比了ICP与RIE，ECR等干法刻蚀技术优缺点的基础上，采用Ni作为掩膜，Cl2/Ar/BCl3作为刻蚀气体，对金属有机化学气相淀积生长的n-Al0.45Ga0.55N进行了ICP刻蚀研究。刻蚀速率随着ICP直流偏压的增加而增加，刻蚀速率随着ICP功率的增加先增加较快后增加缓慢。最后结合刻蚀表面的扫描电镜（SEM）分析和俄歇电子能谱（AES）深度分析对刻蚀结果进行了讨论。分析表明，在满足刻蚀表面形貌的同时，较低的直流偏压下刻蚀速率较慢，但损伤较小，这对于制备高性能的紫外探测器是有利的。     

PECVD SiC材料刻蚀技术

通过对PECVD SiC进行不同条件下的反应离子刻蚀（RIE）和电感耦合反应离子刻蚀（ICP）实验研究，提出了使用SF6和He的混合气体进行RIE刻蚀，并讨论了功率和压强分别对刻蚀速率的影响. 进一步研究了SiC中H含量对于RIE刻蚀速率的影响，同时验证ICP刻蚀过程中负载效应的存在.     

氮化镓干法刻蚀研究进展

对比了RIE,ECR,ICP等几种GaN干法刻蚀方法的特点.回顾了GaN干法刻蚀领域的研究进展.以ICP刻蚀GaN和AlGaN材料为例,通过工艺参数的优化,得到了高刻蚀速率和理想的选择比及形貌.在优化后的刻蚀工艺条件下GaN材料刻蚀速率达到340nm/min,侧墙倾斜度大于80°且刻蚀表面均方根粗糙度小于3nm.对引起干法刻蚀损伤的因素进行了讨论,并介绍了几种减小刻蚀损伤的方法.     

GaN电感耦合等离子体刻蚀的优化和损伤分析

通过分别改变电感耦合等离子体(ICP)刻蚀过程中的ICP功率和DC偏压,对ICP刻蚀GaN材料的工艺条件和损伤情况进行了系统的研究。刻蚀后表面的损伤和形貌通过扫描电子显微镜(SEM)、原子力显微镜(AFM)、电子能谱(EDS)、荧光光谱(PL)等技术进行表征和分析。实验结果表明,刻蚀速率随ICP功率和DC偏压的增加而增加;刻蚀损伤与DC偏压成正比,而与ICP功率的关系较为复杂。实验中观测到刻蚀后GaN样品的荧光光谱带边发射峰和黄带发射峰的强度均有明显下降,这意味着刻蚀产生的缺陷中存在非辐射复合中心,并且该非辐射复合中心的密度与DC偏压成正比。为了兼顾高刻蚀速率和低刻蚀损伤,建议使用高ICP功率(450 W)和低DC偏压(300 V)进行ICP刻蚀。     

ICP硅深槽刻蚀技术研究

介绍电感耦合等离子刻蚀（ICP）技术的基本概念,并结合英国STS公司高密度反应离子刻蚀机的刻蚀机理及刻蚀过程,对硅深槽刻蚀技术进行分析和研究,总结出满足不同工艺要求的硅深槽刻蚀方案。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.