MEMS固态风速风向传感器的设计与制作

风速风向参数的测量在气象测量中占有重要的地位。基于MEMS技术的固态风速风向传感器具有体积小、重量轻、成本低的优点。设计了两种基于MEMS工艺的固态测风传感器,即硅薄膜式测风传感器和硅悬梁式测风传感器,用流体力学原理对这两种风速风向传感器进行了理论分析及ANSYS CFD软件模拟仿真,得出了风速与挠度、剪切力的关系。用惠斯通电桥测量传感器输出信号,通过单个传感器的二次封装测量风向信号。制作出了硅悬梁式测风传感器,并进行了初步测试。     

MEMS固态风速风向传感器的设计与制作

风速风向参数的测量在气象测量中占有重要的地位.基于MEMS技术的固态风速风向传感器具有体积小、重量轻、成本低的优点.设计了两种基于MEMS工艺的固态测风传感器,即硅薄膜式测风传感器和硅悬梁式测风传感器,用流体力学原理对这两种风速风向传感器进行了理论分析及ANSYS CFD软件模拟仿真,得出了风速与挠度、剪切力的关系.用惠斯通电桥测量传感器输出信号,通过单个传感器的二次封装测量风向信号.制作出了硅悬梁式测风传感器,并进行了初步测试.     

热薄膜温差型CMOS风速风向传感器的研究和实现

介绍了一种基于 CMOS,能同时测量风速风向的硅集成传感器。通过保持芯片和环境温差恒定在设定值 ,测量芯片上对称区域由于风强迫对流而引起的温差 ,利用二维结构同时获得风速风向信息。本文首先介绍热薄膜温差型风速风向传感器原理 ,给出了具体结构和工艺 ,最后对样品进行了风洞测试 ,传感器能够测量风速 0～ 2 3 m/ s且 3 60°方向敏感     

基于纳米裂纹的MEMS二维风速风向传感器

风速、风向信号的采集在工业、医疗与气象等领域具有重要意义。研发了一种基于纳米裂纹的微电子机械系统(MEMS)二维风速风向传感器。利用纳米裂纹超高灵敏度的优点,设计了纤毛-悬臂梁结构用于风速、风向信号采集。通过有限元数值仿真分析确定传感器的纤毛直径、高度和悬臂梁长度等结构参数。然后,采用聚二甲基硅氧烷(PDMS)衬底制备、聚酰亚胺粘附、金薄膜沉积、金薄膜图案化以及纳米裂纹工艺流程制备了纳米裂纹金薄膜。采用该纳米裂纹金薄膜,利用MEMS工艺技术制作了基于纳米裂纹的MEMS二维风速风向传感器,并通过自主研制的测试平台测试了传感器的风速和风向性能。实验结果表明,制备的二维风速风向传感器能够稳定测量2～7 m/s的风速信号,并具有误差不超过15°的风向识别能力。     

螺旋桨式测风传感器自动检测系统研究与开发

螺旋桨式测风传感器应用范围广、需求数量大,而传统检测方法效率低、容易出现人为差错,为此研究开发了一种自动检测系统,采用伺服电机带动测风传感器风速转轴转动的方法检测风速部件,利用蜗杆蜗轮模型构建角度盘,实现风向部件检测。实际应用表明,该系统检测效率高,适检范围宽,实现了螺旋桨式测风传感器风速风向检测的自动化,与过去人工方式相比检测每台测风传感器的时间减少50%以上。     

二维MEMS风速风向传感器的设计与测试

给出一种基于MEMS工艺的二维风速风向传感器的设计、制造以及测试结果。该传感器加热电阻采用圆形结构，四个测温电阻对称分布在芯片四周。传感器芯片在玻璃衬底上采用两步MEMS剥离工艺加工，加工工艺简单可靠。该传感器采用恒功率工作方式，利用热温差原理测量风速和风向。经过风洞测试，传感器可以完成360°风向检测，误差不超过10°。     

MEMS加速度传感器的原理及分析

主要介绍了五种目前常见的基于MEMS技术的加速度传感器,从物理结构的角度对这几种传感器的测量原理进行了分析,不但着重介绍了已经较为成熟且形成产业化的硅微电容式、压阻式、热电耦式加速度传感器,而且对目前较为前沿的光波导式加速度传感器也进行了一些分析和介绍。     

一种基于MEMS工艺的二维风速传感器的设计

给出了一种基于MEMS工艺的二维热风速传感器的设计、制造以及测试结果.该传感器采用恒功率工作方式,利用热温差的方法测量风速和风向.本传感器采用MEMS剥离工艺在玻璃衬底上同时加工出加热电阻和测温电阻,利用简单可靠的加工工艺实现了热隔离和高灵敏度.经过风洞风速风向测试,得知传感器的风速量程超过10m/s,360°范围内风向测量误差不超过8°.传感器的响应时间不超过1s,功耗为10mW.     

一种基于MEMS工艺的二维风速传感器的设计

给出了一种基于MEMS工艺的二维热风速传感器的设计、制造以及测试结果.该传感器采用恒功率工作方式,利用热温差的方法测量风速和风向.本传感器采用MEMS剥离工艺在玻璃衬底上同时加工出加热电阻和测温电阻,利用简单可靠的加工工艺实现了热隔离和高灵敏度.经过风洞风速风向测试,得知传感器的风速量程超过10m/s,360°范围内风向测量误差不超过8°.传感器的响应时间不超过1s,功耗为10mW.     

二维MEMS风速风向传感器的设计与测试

给出一种基于MEMS工艺的二维风速风向传感器的设计、制造以及测试结果。该传感器加热电阻采用圆形结构,四个测温电阻对称分布在芯片四周。传感器芯片在玻璃衬底上采用两步MEMS剥离工艺加工,加工工艺简单可靠。该传感器采用恒功率工作方式,利用热温差原理测量风速和风向。经过风洞测试,传感器可以完成360°风向检测,误差不超过10°。     

Progress in complementary metal-oxide-semiconductor silicon photonics and optoelectronic integrated circuits

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits(OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.     

硅熔体中3C-SiC的生长及6H-SiC晶型的抑制

论述了从硅熔体中生长 3C- Si C晶体过程中 6 H- Si C晶型控制的一般原理 .采用将硅置于高纯石墨坩埚中使其在高温条件下熔化 ,坩埚内壁石墨自然熔解于硅熔体中形成碳饱和的硅熔体 ,在石墨表面形成厚约 0 .2 m m的Si C薄层 .X射线衍射 (XRD)、X射线光电子能谱 (XPS)、Ram an散射等分析表明所制备样品为 3C- Si C多晶体 .实验结果进一步证明从硅熔体中生长 3C- Si C晶体过程中 ,通过适当调整工艺参数可以抑制 6 H- Si C晶型的形成 .     

Versatile active-only biquad circuits with loss-less and lossy integrators

This paper presents a realization of voltage-mode and current-mode active-only biquad circuits with a two-integrator loop-structure. The circuits are constructed solely with operational amplifiers (OAs) and operational transconductance amplifiers (OTAs). The biquad circuits can realize the multiple circuit transfer functions, and the circuit parameters can be tuned orthogonally through adjusting the transconductance gains of the OTAs. Also, these biquad circuits enjoy very low sensitivities with respect to the circuit active elements. Some examples are given together with simulated results by PSPICE.

The circuit configurations are very suitable for implementation on both bipolar and CMOS technologies.     

非、单晶硅太阳能电池组件比功率发电量对比研究

通过比较单晶硅与非晶硅比功率发电量,分析两者在太阳能发电功效上的具体差异.     

Dissolution Behaviors and Applications of Silicon Oxides and Nitrides in Transient Electronics

Silicon oxides and nitrides are key materials for dielectrics and encapsulation layers in a class of silicon‐based high performance electronics that has ability to completely dissolve in a controlled fashion with programmable rates, when submerged in bio‐fluids and/or relevant solutions. This type of technology, referred to as “transient electronics”, has potential applications in biomedical implants, environmental sensors, and other envisioned areas. The results presented here provide comprehensive studies of transient behaviors of thin films of silicon oxides and nitrides in diverse aqueous solutions at different pH scales and temperatures. The kinetics of hydrolysis of these materials depends not only on pH levels/ion concentrations of solutions and temperatures, but also on the morphology and chemistry of the films, as determined by the deposition methods and conditions. Encapsulation strategies with a combination of layers demonstrate enhancement of the lifetime of transient electronic devices, by reducing water/vapor permeation through the defects.     

Fabrication and thermal evaluation of silicon on diamond wafers

Silicon on diamond (SOD) is proposed as a superior alternative to conventional silicon on insulator (SOI) technology for silicon-based electronics. In this paper, we present a novel SOD structure in which the active Si layer is in direct contact with a thick, highly oriented diamond (HOD) layer that is directly attached to a heat sink. In contrast to the earlier work,^1,2 the diamond film is relatively thick (∼70 μm), free standing, and close to single crystalline, thus possessing much greater thermal conductivity and no limitation of the Si backing wafer. Two different fabrication schemes are investigated: (1) direct growth, where the Si-device layer makes contact with the nucleation side of the diamond layer; and (2) wafer fusion, where the Si device layer makes a direct contact with the diamond growth surface. Thermal evaluation was performed using metallic microheaters. These studies clearly showed more than one order of magnitude better thermal management properties of diamond with respect to Si and SOI.     

Silicon nitride coating and crucible—effects of using upgraded materials in the casting of multicrystalline silicon ingots

A method for removal of metallic contaminants from commercial Si₃N₄‐powders has been developed. The method is based on acid leaching and shows promising results. Analyses show that the content of both intermetallic compunds as Fe, Ti and Al as well as O are significantly reduced. Clean, synthetic fused silica crucibles have been used along with normal sintered ones based on natural quartz. The crucibles were coated with normal, commercial silicon nitride powder and with purified Si₃N₄ in a cleanest possible environment. The crucibles were then used as vessels for directional solidification of multicrystalline silicon in a pilot scale furnace. The average lifetime of minority charge carriers in the cast silicon was determined by quasi steady state photoconductance (QSSPC) from the bottom to the top of the ingots. These varied in a systematic way, so that the materials cast in the pure environment had significantly higher values than the materials cast with conventional coating‐ and crucible materials. The maximum values for the lifetimes in the individual ingots varied from 7 to 135 µs. Copyright © 2007 John Wiley & Sons, Ltd.     

用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术

采用在阳极化反应时改变电流强度的办法 ,在高掺杂的 P型硅 (111)衬底上制备了具有不同多孔度的双层结构多孔硅层 .用超高真空电子束蒸发技术在多孔硅表面外延生长了一层高质量的单晶硅膜 .在室温下 ,该外延硅片同另一生长有热二氧化硅的硅片键合在一起 ,在随后的热处理过程中 ,键合对可在多孔硅处裂开 ,从而使外延的单晶硅膜转移到具有二氧化硅的衬底上以形成 SOI结构 .扫描电镜、剖面投射电镜、扩展电阻和霍尔测试表明 SOI样品具有较好的结构和电学性能     

An investigation of microcrystalline films produced by a dc glow discharge in silane and hydrogen

Microcrystalline and amorphous Si:H films have been produced in a dc cathodic discharge in atmospheres containing silane diluted in hydrogen. The composition of the discharge atmosphere has a strong effect on the nucleation of microcrystalline Si:H films. Dopants such as boron enhance the formation of microcrystals while higher silanes such as disilane inhibit crystallization. The presence of other gases in the discharge atmosphere generally inhibits the formation of microcrystals. Research reported herein was supported by Solar Energy Research Institute, under Contract No. XG-0-9372-1, and by RCA Laboratories, Princeton, NJ, 08540, U.S.A.     

Comparison of thin epitaxial film silicon photovoltaics fabricated on monocrystalline and polycrystalline seed layers on glass

We fabricate thin epitaxial crystal silicon solar cells on display glass and fused silica substrates overcoated with a silicon seed layer. To confirm the quality of hot‐wire chemical vapor deposition epitaxy, we grow a 2‐µm‐thick absorber on a (100) monocrystalline Si layer transfer seed on display glass and achieve 6.5% efficiency with an open circuit voltage (V_OC) of 586 mV without light‐trapping features. This device enables the evaluation of seed layers on display glass. Using polycrystalline seeds formed from amorphous silicon by laser‐induced mixed phase solidification (MPS) and electron beam crystallization, we demonstrate 2.9%, 476 mV (MPS) and 4.1%, 551 mV (electron beam crystallization) solar cells. Grain boundaries likely limit the solar cell grown on the MPS seed layer, and we establish an upper bound for the grain boundary recombination velocity (S_GB) of 1.6x10⁴ cm/s. Copyright © 2014 John Wiley & Sons, Ltd.