椭圆曲线密码处理器的高效VLSI设计与实现

采用复合武硬件设计方法，通过数学公式推导和电路结构设计，完成了一款GF（2m）域椭圆曲线密码处理器的高效VLSI实现。以低成本为目标，对算术逻辑模块的乘法、约减、平方、求逆，以及控制电路模块都进行了优化设计。按照椭圆曲线密码的不同运算层次，设计了不同层次的控制电路。该处理器综合在中芯国际SMIC0．18μm标准工艺库上．比相关研究的芯片面积节省48％，同时保证了很快的速度。     

SM2高速双域 Montgomery 模乘的硬件设计

作为由国家密码管理局公布的SM2椭圆曲线公钥密码算法的核心运算,模乘的实现好坏直接决定着整个密码芯片性能的优劣．Montgomery模乘算法是目前最高效也是应用最为广泛的一种模乘算法．本文基于Mont-gomery模乘算法,设计了一种高速,且支持双域（GF（p）素数域和GF（2m ）二进制域）的Montgomery模乘器．提出了新的实现结构,以及一种新型的W allace树乘法单元．通过对模块合理的安排和复用,本设计极大的缩小了时间消耗与硬件需求,节省了大量的资源．实现256位双域模乘仅需0．34μs ．     

素数域参数可选高速椭圆曲线密码芯片ASIC实现

设计了一款素数域高速椭圆曲线密码芯片,电路采用ASIC实现,支持六种椭圆曲线密码协议:密钥产生,密钥协商,数字签名,数字认证,加密及解密,并且支持椭圆曲线参数的用户配置.在典型情况下,芯片每秒可实现10 526次点乘运算,8 333次数字签名以及4 761次认证,性能优于素数域其他ECC设计.     

一种新型硬件可配置公钥制密码协处理器的VLSI实现

提出了一种新型的硬件可配置的密码协处理器，同时适用于GF(p)和GF(2^m)两种域，可以实现RSA和ECC两种目前主流的加密算法。同时又具备硬件可配置的特点，可以完成32—512bit的模乘运算而无需对硬件做任何修改。本文的密码协处理芯片用TSMC0．35μm标准单元库综合，可以工作在100MHz时钟下，等效单元45k等效门，512bit的模乘运算速度可以达到190kbit／s，一次椭圆曲线上的233bit的点加运算只需18μs。     

参数可选的高速椭圆曲线密码专用芯片的VLSI实现

研究了椭圆曲线密码体制的VLSI实现问题。从点乘运算层与群运算层调度到有限域上的高速运算方法等方面给出了一些提高椭圆曲线上点乘运算的新方案；提出了一种域与曲线参数可选择的高速椭圆曲线密码专用芯片VLSI新结构。基于0．6mm单元库，芯片面积约为36mm2。综合后仿真结果表明：设计芯片能够有效地完成数字签名与身份验证完整流程，在20MHz下平均每次签名时间为62．67ms,高于目前报道的其它同类芯片。     

基于无线网络安全的ECC点积算法研究

椭圆曲线因其自身的优越性应用于无线网络安全中。椭圆曲线密码应用中常使用的两类椭圆曲线为定义在有限域GF（P）上的素曲线和在有限域GF（2^m）上的二元曲线。素曲线计算因不需二元曲线所需要的位混淆运算，常应用于软件：而对硬件应用而言，则最好使用二元曲线，它可用很少的门电路来得到快速且功能强大的密码体制．在椭圆曲线加密体制中，NP问题是制约其应用和发展的瓶颈的核心问题。文中提出了基于无线网络安全的GF（2^m）域上的椭圆曲线点积算法的改进。且本文将椭圆曲线的基点和随机点的点积算法区别开来，具有重要的现实实现意义。     

基于FPGA技术的GF(2m)域乘法器的研究和设计

椭圆曲线密码体制以其密钥短、安全强度高的优点获得了广泛的重视和应用,而GF(2m)有限域乘法运算是该密码体制最主要的运算.本文研究了基于FPGA芯片的多项式基乘法器的快速设计方法,并给出了面积与速度的比较和分析.     

高性能可扩展公钥密码协处理器研究与设计

 本文提出了一种高效的点乘调度策略和改进的双域高基Montgomery模乘算法,在此基础上设计了一种新型高性能可扩展公钥密码协处理器体系结构,并采用0.18μm 1P6M标准CMOS工艺实现了该协处理器,以支持RSA和ECC等公钥密码算法的计算加速.该协处理器通过扩展片上高速存储器和使用以基数为处理字长的方法,具有良好的可扩展性和较强的灵活性,支持2048位以内任意大数模幂运算以及576位以内双域任意椭圆曲线标量乘法运算.芯片测试结果表明其具有很好的加速性能,完成一次1024位模幂运算仅需197μs、GF(p)域192位标量乘法运算仅需225μs、GF(2^m)域163位标量乘法运算仅需200.7μs.     

小面积、低能耗的GF（2^m）域ECC模运算VLSI实现

以面积、能耗为优先准则,研究了GF(2m)域椭圆曲线密码(ECC)模运算VLSI的实现.选择GF(2163)上固定多项式基,引入了简单有效的快速模平方算法和改进的模逆算法,利用串行结构分别实现了模乘、模平方与模逆模块.基于UMC 0.25μm 1.8V工艺库的仿真结果表明,提出的串行模乘、快速组合逻辑模平方和快速模逆VLSI实现方式,通过牺牲域多项式灵活性,能够有效地减小面积、降低能耗,适合于资源受限的ECC系统.     

超椭圆曲线离散对数的Weil Descent代数攻击的分析

本文首先介绍了Galbraith的Weil Descent代数攻击方法，然后对定义在GF（q^n)上的形如y^2 xy=f(x)的HCDLP能否用Weil Descent代数方法攻击作了详细讨论，作为例子，研究了GF（4）和GF（8）上的这类曲线。得到结论：（1）Weil Descent代数攻击法只能适用于极少部分这类超椭圆曲线；（2）当亏格或基域增大时，Weil Descent方法攻击成功的概率趋向于0。所以说Weil Descent代数攻击法对建立在GF（2^n)上的这类超椭圆曲线密码体制并没有太大的威胁。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.