用于APD激光探测的电荷灵敏前置放大器设计

雪崩光电二极管（APD）作为探测元件实现光电转换广泛应用于激光脉冲探测技术中。前置放大器是影响APD激光脉冲探测系统好坏的关键因素,前置放大器的信噪比决定了整个探测系统的信噪比优劣。提出了电荷灵敏前置放大器应用于APD激光脉冲探测系统以提高探测距离和探测精度的方法。讨论了激光脉冲探测技术和APD特性,在此基础上设计了以结型场效应管和集成运放为主要器件的低噪声电荷灵敏前置放大器电路并对设计电路进行了实验分析。实验结果表明：将电荷灵敏前置放大器应用于APD激光脉冲探测系统可以有效提高系统的信噪比,改善激光探测性能。     

基于APD的光电探测器电路研究与设计

提出将APD与前置放大器电路配合使用的最佳方法.利用光电转换信噪比数学模型,确定选择与APD匹配的电路器件,给出了前置放大器采用低噪声的分体器件与集成运算放大器相组合的设计方法.通过对前置放大器重要参数信噪比进行测量和分析.结果表明,该探测器电路信噪比优于直接与集成运算放大器匹配的探测器电路,且可靠性高,宜扩展,具有广泛的应用前景.     

用于便携式健康监护设备的低功耗、低噪声模拟前端电路

本文介绍的用于处理人体生物电信号的模拟前端电路包括仪表放大器、滤波器和可变增益、带宽放大器。仪表放大器采用电容耦合输入来消除直流电极失调。基于电流反馈拓扑结构的IA通过在输入和反馈网络中采用电容分压器来降低功耗。并且,仪表放大器的输入差分对采用互补CMOS输入来提高输入跨导以减小等效输入热噪声。该电路采用Global Foundry 0.35微米 CMOS 工艺流片,电路消耗的总电流为3.96uA,电源电压为3.3V。测试得到的等效输入噪声是0.85uVrms(0.5-100Hz), 噪声能效因子值为6.48。     

CMOS 1.4THzΩ 155Mb/s光接收机差分跨阻前置放大器

采用本土CSMC0.6μm标准CMOS技术设计实现了一种用于光纤用户网的CMOS跨阻前置放大器.电路采用差分结构以提高共模抑制比,减小高频下电源波动和寄生反馈通路的干扰,抑制衬底耦合噪声和温漂,从而有效抑制前置放大器的噪声.同时前置放大器为双端输出,易与后面差分结构的主放大器级联,无需单端-双端转换电路和片外元件,电路结构更为简单,实现了单片集成.电路采用单级放大结构,比通常的多级电路更为稳定.测试结果表明,前置放大器在5V电源电压下增益-带宽积可达1.4THzΩ,等效输入电流噪声为1.81pA/Hz,可稳定工作在155Mb/s(STM-1)的速率上     

CMOS 1.4THzΩ 155Mb/s光接收机差分跨阻前置放大器

采用本土CSMC 0.6μm标准CMOS技术设计实现了一种用于光纤用户网的CMOS跨阻前置放大器.电路采用差分结构以提高共模抑制比,减小高频下电源波动和寄生反馈通路的干扰,抑制衬底耦合噪声和温漂,从而有效抑制前置放大器的噪声.同时前置放大器为双端输出,易与后面差分结构的主放大器级联,无需单端-双端转换电路和片外元件,电路结构更为简单,实现了单片集成.电路采用单级放大结构,比通常的多级电路更为稳定.测试结果表明,前置放大器在5V电源电压下增益-带宽积可达1.4THzΩ,等效输入电流噪声为1.81pA/ Hz,可稳定工作在155Mb/s(STM-1)的速率上.     

焦平面输入电路研究

在混合式焦平面阵列中，探测器和读出电路的耦合通过输入级电路实现。为分析输入电路对探测器-放大器系统性能的影响，用分立元件设计制作了一个三级的前置放大器并进行了模拟实验，实验表明放大器输入级噪声是造成探测器信噪比下降的主要因素，应用中应该选用具有特定噪声性能的放大器与探测器匹配。研究了焦平面中常用的直接注入(DI)和电容反馈放大电路(CTIA)与探测器耦合时在噪声、输入阻抗、工作点匹配等方面应具备的条件。提出了临界输入阻抗的概念，实验表明，当电路的输入阻抗低于此临界值时(对于GaN p?蛳i?蛳n 光伏探测器来说约为106 Ω)，焦平面才能获得较高的注入效率。     

二极管型非制冷红外探测器的前端电路设计

设计了一种二极管型非制冷红外探测器的前端电路,该电路采用Gm-C-OP积分放大器的结构,将探测器输出的微弱电压信号经跨导放大器(OTA)转化为电流信号,再经电容反馈跨阻放大器(CTIA)积分转化为电压信号输出。该OTA采用电流反馈型结构,可以获得比传统OTA更高的线性度和跨导值。输入采用差分结构,可以有效地消除环境温度及制造工艺对探测器输出信号的影响。电路采用0.35 m CMOS工艺进行设计并流片,5 V电源电压供电。Gm-C-OP积分放大器总面积0.012 6 mm2,当输入差分电压为0~5 mV时,测试结果表明:OTA跨导值与仿真结果保持一致,Gm-C-OP积分放大器可实现对动态输入差分信号到输出电压的线性转化,线性度达97%,输出范围大于2 V。     

一种弱光成像用AlGaN APD阵列的读出电路设计

设计了64×64 AlGaN雪崩光电二极管(APD)阵列的读出电路,该读出电路采用了具有稳定探测器偏压能力的电容跨阻抗放大器(CTIA)结构。利用APD的等效电路模型,推导了电荷-电压转换因子(CVF)与积分电容、放大器增益的关系。为增加最大探测光电流、降低响应的非均匀性,利用上述关系得到积分电容为70fF,放大器增益为300。读出电路的地址选择采用移位寄存器来实现,并采用电压缓冲器实现信号的输出。     

超高增益低噪声红外焦平面读出电路研究

高增益探测对InGaAs焦平面探测器在微光夜视条件下成像有重要意义。设计了一款InGaAs焦平面用的高增益低噪声64×64元读出电路。读出电路输入级采用CTIA模式(电容负反馈放大),通过计算发现输入级运算放大器热噪声是主要噪声源,采用单端替代差分运放将输入级噪声降低26%。同时,研究积分电容和增益、满阱容量、噪声的关系,将积分电容降低到1 fF,实现了超高增益和低噪声探测。读出电路采用0.18mm工艺设计,像元中心距为30mm。经过PEX(寄生参数提取)参数提取,实际积分电容为0.94 fF,经过测试芯片整体功耗低至24.1 m W,电路噪声电子数为4.37e。     

一种长波红外光导探测器CMOS电路设计

CMOS 电路是高输入阻抗,而长波红外光导探测器是低阻抗,实现低阻抗红外光导探测器与CMOS 电路的良好匹配,是目前长波红外探测器高性能成像的关键技术。文中设计了一种能在低温下工作的低阻抗红外光导探测器CMOS 电路,差分放大器采用正负电源供电,在输入级采用桥式输入方式,该电路第一级采用1M的负反馈电阻实现信号放大,第二级放大采用正端放大方式,输入级、第一级放大、第二级放大均采用直接耦合方式。测试结果表明,该放大器与长波红外低输入阻抗光导探测器连接后能正常工作,总放大倍数大于1 万倍,3 dB 带宽大于4 kHz,等效输入电压噪声小于1.5 V,有效地解决了低阻抗光导探测器与高阻CMOS 电路的匹配问题。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.