适于空间图像闪存阵列的非与闪存控制器

提出一种适于空间应用的非与(NAND,not and)闪存控制器。首先,分析了空间相机存储图像的要求,说明了闪存控制器结构的特点。接着,分析了闪存数据存储差错的机理,针对闪存结构组织特点提出了一种基于BCH(Bose-Chaudhuri-Hocquenghem,2108,2048,5)码的闪存纠错算法。然后,对传统BCH编码器进行了改进,提出了一种8bit并行蝶形阵列处理机制。最后,使用地面检测设备对闪存控制器进行了试验验证。结果表明,闪存控制器能快速稳定、可靠地工作,在闪存单页2Kbt/page下可以纠正40bit错误,在相机正常工作行频为2.5kHz下拍摄图像时4级流水线闪存连续写入速度达到133Mbit/s,可以满足空间相机图像存储系统的应用。     

一种高码率低复杂度准循环LDPC码设计研究

该文设计了一种特殊的高码率准循环低密度校验(QC-LDPC)码,其校验矩阵以单位矩阵的循环移位阵为基本单元,与随机构造的LDPC码相比可节省大量存储单元。利用该码校验矩阵的近似下三角特性,一种高效的递推编码方法被提出,它使得该码编码复杂度与码长成线性关系。另外,该文提出一种分析QC-LDPC码二分图中短长度环分布情况的方法,并且给出了相应的不含长为4环QC-LDPC码的构造方法。计算机仿真结果表明,新码不但编码简单,而且具有高纠错能力、低误码平层。     

一种基于AP与消除基本陷阱集的低错误平层QC-LDPC码构造方法

针对准循环低密度奇偶校验(LDPC)码在高信噪比区域可能存在错误平层的问题,提出了一种基于等差数列(AP)和消除基本陷阱集(ETS)的低错误平层QC-LDPC码构造方法。该方法利用改进的ETS消除算法构造基矩阵,以减少基本矩阵中的小基本陷阱集。然后利用特殊性质的等差数列(AP)确定循环移位系数,扩展得到最终的校验矩阵。该构造方法的计算复杂度低且码字的码长、码率可灵活设计。并且仿真结果表明,所构造码率为0.5的PEG-Trap set-AP(PTAP)-QC-LDPC(1200,600)码,在误码率为10-6时,与IEEE 802.16标准中QC-LDPC(1200,600)码、利用PEG算法与AP的PEG-AP-QC-LDPC(1200,600)码、通过控制环(CC)的CC-QCLDPC(1200,600)码和基于等差数列的AP-QC-LDPC(1200,600)码相比较,其净编码增益分别提升了0.08,0.31,0.57和0.64dB,有效地改善了高信噪比区域的纠错性能,且未出现明显的错误平层。     

低密度校验码及其在图像传输中的应用

低密度校验(Low-Density Parity-Check,LDPC)码是一种基于图和迭代译码的信道编码方案,性能非常接近Shannon极限且实现复杂度低,具有很强的纠错抗干扰能力。该文深入研究了LDPC码的编码和译码基本原理,并将其应用于移动衰落信道图像的传输中,仿真结果表明LDPC码能为图像传输带来显著的性能提高,且系统复杂度低,译码时延短。     

一种用于NAND闪存的奇偶位线块编程补偿算法

为改善数据保持干扰和编程干扰对NAND闪存可靠性的影响,提出了一种新的奇偶位线块编程补偿算法。该算法利用编程干扰效应来补偿由数据保持引起的阈值漂移,修复NAND闪存因数据保持产生的误码,提高了NAND闪存的可靠性。将该算法应用于编程擦除次数为3k次的1x-nm MLC NAND闪存。实验结果表明,在数据保持时间为1年的条件下,与传统奇偶交叉编程算法相比,采用该补偿算法的NAND闪存的误码降低了93%;与读串扰恢复算法相比,采用该补偿算法的NAND闪存的误码下降了38%。     

一种可快速编码的QC-LDPC码构造新方法

为解决LDPC码的编码复杂度问题,使其更易于硬件实现,提出了一种可快速编码的准循环LDPC码构造方法。该方法以基于循环置换矩阵的准循环LDPC码为基础,通过适当的打孔和行置换操作,使构造码的校验矩阵具有准双对角线结构,可利用校验矩阵直接进行快速编码,有效降低了LDPC码的编码复杂度。仿真结果表明,与IEEE 802.16e中的LDPC码相比,新方法构造的LDPC码在低编码复杂度的基础上获得了更好的纠错性能。     

具有低编码复杂度准循环扩展LDPC码的构造方法

PEG(Progressive-Edge-Growth)算法是迄今为止构造性能优异的LDPC中短码的一种有效构造方法,然而直接采用该算法构造的LDPC码的编码复杂度正比于码长的平方,这是其实用化过程中的一个瓶颈。针对这一问题,提出一种具有低编码复杂度和低错误平层的准循环扩展LDPC码的构造方法。该算法在PEG算法基础上,先构造出近似下三角结构的半随机基矩阵,然后再对基矩阵进行扩展,该方法可以在不改变基矩阵的度分布比例情况下,有效消除短环。仿真结果表明,所提出的方法构造的LDPC码比原始的PEG算法构造的随机LDPC码具有更低的错误平层,而且编码复杂度更低,更易于硬件实现。     

SSD的现状及发展前景

半导体硬盘SSD(固态硬盘)由NAND闪存、NAND控制器以及用作缓冲存储器的DRAM所构成(见图1)。在SSD中,坏块管理、纠错编码(ECC)及单元调整等处理都由NAND控制器的闪存转换层(FTL)来执行。SSD的性能不仅取决于NAND闪存的性能,而且在很大程度上还会受到NAND控制器算法的影响。因此,在优化NAND控制器的设计时,需要考虑到NAND闪存的特性。本文将基于NAND闪存的器件技术及电路技术,以NAND控制器技术为中心,论述SSD技术的现状和今后的挑战等。     

基于CMMB标准的LDPC码编码器RU算法的优化设计

一 引言 LDPC码是由Gallager于1962年提出的一种基于稀疏校验矩阵的特殊线性分组码．并在上世纪末被重新发现和推广。LDPC码的编码是基于Shannon提出的随机编码的思想．其软判决译码采用低复杂度的置信传播迭代译码算法,在理论上可以逼近香农限,具有较大的灵活性和比较低的误码平台。     

基于分布式奇偶校验码的低复杂度极化码SCLF译码算法

针对极化码串行抵消列表比特翻转(Successive Cancellation List Bit-Flip, SCLF)译码算法复杂度较高的问题,提出一种基于分布式奇偶校验码的低复杂度极化码SCLF译码(SCLF Decoding Algorithm for Low-Complexity Polar Codes Based on Distributed Parity Check Codes, DPC-SCLF)算法。与仅采用循环冗余校验(Cyclic Redundancy Check, CRC)码校验的SCLF译码算法不同,该算法首先利用极化信道偏序关系构造关键集,然后采用分布式奇偶校验(Parity Check, PC)码与CRC码结合的方式对错误比特进行检验、识别和翻转,提高了翻转精度,减少了重译码次数。此外,在译码时利用路径剪枝操作,提高了正确路径的竞争力,改善了误码性能,且利用提前终止译码进程操作,减少了译码比特数。仿真结果表明,与D-Post-SCLF译码算法和RCS-SCLF译码算法相比,所提出算法具有更低的译码复杂度且在中高信噪比下具有更好的误码性能。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.