钟控准静态能量回收逻辑电路

钟控准静态能量回收逻辑 (clocked quasi- static energy recovery logic,CQSERL)只在输入信号导致输出状态发生变化的情况下才对电路节点充电 (或者回收 ) ,不需要在每个功率时钟周期循环充电和回收操作 ;CQSERL是单端输入输出逻辑 ,减小了电路实现代价 .设计了 4位 QSERL 串行进位加法器 (RCA)电路 ,和相应的 CMOS电路进行了功耗比较 .功率时钟为 10 MHz时 ,CQSERL 电路功耗是对应 CMOS电路的 35 % .流片实现了一个简单结构的正弦功率时钟产生电路 ,功率时钟的频率和相位与外接系统时钟相同     

钟控准静态能量回收逻辑电路

钟控准静态能量回收逻辑(clocked quasi-static energy recovery logic,CQSERL)只在输入信号导致输出状态发生变化的情况下才对电路节点充电(或者回收),不需要在每个功率时钟周期循环充电和回收操作;CQSERL是单端输入输出逻辑,减小了电路实现代价.设计了4位QSERL串行进位加法器(RCA)电路,和相应的CMOS电路进行了功耗比较.功率时钟为10MHz时,CQSERL电路功耗是对应CMOS电路的35%.流片实现了一个简单结构的正弦功率时钟产生电路,功率时钟的频率和相位与外接系统时钟相同.     

具有反馈结构的PAL-2NF电路

在分析PAL-2N电路缺陷产生原因的基础上,提出了一种低功耗,具有反馈结构的PAL-2NF电路,它采用逐级相位落后90°的四相正弦功率时钟.讨论了PAL-2NF电路的设计方法,并在不同时钟频率下用1.2μm的CMOS工艺参数对所设计的电路进行PSPICE模拟,电路能完成正确的逻辑功能.五级级联的PAL-2NF反相器/缓冲器电路在功率时钟频率10MHz时都比相应的PAL-2N电路节省93%以上的功耗,在400MHz时功耗节省也可达40%.由于几乎完全消除了输出端的悬空现象和逻辑0的"第三态"现象,PAL-2NF电路可以工作于更高的时钟频率和更低的输出波形畸变.     

具有反馈结构的PAL-2NF电路

在分析PAL - 2 N电路缺陷产生原因的基础上,提出了一种低功耗,具有反馈结构的PAL - 2 NF电路,它采用逐级相位落后90°的四相正弦功率时钟.讨论了PAL - 2 NF电路的设计方法,并在不同时钟频率下用1 .2μm的CMOS工艺参数对所设计的电路进行PSPICE模拟,电路能完成正确的逻辑功能.五级级联的PAL - 2 NF反相器/缓冲器电路在功率时钟频率1 0 MHz时都比相应的PAL - 2 N电路节省93%以上的功耗,在4 0 0 MHz时功耗节省也可达4 0 % .由于几乎完全消除了输出端的悬空现象和逻辑0的“第三态”现象,PAL - 2 NF电路可以工作于更高的时钟频率和更低的输出波形畸变     

二种EPAL绝热开关电路

研究和设计了两种低功耗的EPAL(efficientPAL)绝热开关电路.这两种电路均采用逐级相位落后90°的四相正弦功率时钟.讨论了EPAL电路的设计方法,并在不同时钟频率和不同的负载条件下用1.2μm的CMOS工艺参数对所设计的电路进行PSPICE模拟.模拟结果表明这两类电路均能完成正确的逻辑功能.两种EPAL的五级反相器/缓冲器电路在功率时钟频率为10MHz时都比相应的PAL-2N电路节省80%以上的功耗,在400MHz时功耗节省也分别可达23%和50%.EPAL电路可以工作于更高的时钟频率,有更强的驱动负载能力和更低的输出波形畸变     

二种EPAL绝热开关电路

研究和设计了两种低功耗的EPAL(efficient PAL)绝热开关电路.这两种电路均采用逐级相位落后90°的四相正弦功率时钟.讨论了EPAL电路的设计方法,并在不同时钟频率和不同的负载条件下用1.2μm的CMOS工艺参数对所设计的电路进行PSPICE模拟.模拟结果表明这两类电路均能完成正确的逻辑功能.两种EPAL的五级反相器/缓冲器电路在功率时钟频率为10MHz时都比相应的PAL-2N电路节省80%以上的功耗,在400MHz时功耗节省也分别可达23%和50%.EPAL电路可以工作于更高的时钟频率,有更强的驱动负载能力和更低的输出波形畸变.     

DDS信号产生电路相位噪声的分析

相位噪声是制约DDS用于高稳定频率源的的关键指标。文中定量给出了DDS内部相位截断误差、幅度量化误差、DAC以及参考时钟源对相位噪声的影响，并着重分析了DDS外围电路对相位噪声的影响，讨论了相位噪声恶化的原因，给出了进行电路设计时需要注意的一些事项，对设计低相噪DDS信号产生电路有很大的帮助。     

一种改进的能量回收逻辑电路

文本分析了能量回收电路的功耗组成，指出非绝热损失是能量回收电路的主要功耗能量来源，提出了一种改进的能量回收逻辑电路IERL。IERL电路增加了额外的回收路径，能够显著降低电路的非绝热损失，HSPICE模拟结果表明，IERL电路具有很好的低功耗性能。同时，给出了IERL电路的复杂逻辑门设计与级联方式，用0．8μm DPDM工艺实现了2位IERL全加器电路和两相正弦功率时钟电路。     

基于绝热逻辑的低功耗乘法器电路设计

基于绝热开关理论的能量回收逻辑与传统的静态CMOS逻辑相比,能够大大减少电路的功率消耗。这里介绍了一种使用单相正弦电源时钟的能量回收逻辑,分别用静态CMOS逻辑和这种能量回收逻辑设计,并仿真了一个两位乘法器电路,比较了这两种电路的性能。研究表明,采用能量回收逻辑设计的乘法器显著降低了电路的功率消耗。     

能量回收技术在D触发器上的应用

将能量回收技术应用于灵敏放大器型D触发器(SAERD),该电路采用单相正弦时钟,用来回收时钟端的能量,对于触发器的内部节点和存储单元仍采用恒定电源。在时钟频率为100～300MHz时,时钟端的功耗较输入方波时平均节省约80%。在SMIC0.13μm工艺下将SAERD应用于一款函数发生器,并与传统主从型D触发器(MSD)实现的电路进行功耗比较。仿真结果显示,时钟频率为200MHz时,功耗节省高达17.1%。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.