首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 46 毫秒
1.
电子墨水用SiO2白色电泳颗粒的表面包裹及荷电   总被引:2,自引:2,他引:2  
采用控制正硅酸乙酯在氨水-无水乙醇中水解的方法,制备出适合电子墨水使用的白色SiO2颗粒。将经H2O2浸泡,由甲基丙烯酰氧基丙基三甲氧基硅烷(MPS)表面改性的SiO2颗粒,与苯乙烯单体分散在异丙醇中,采用自由基共聚法在SiO2颗粒表面包裹不同厚度的聚苯乙烯包4裹层。采用场发射扫描电镜(Field Emission Scanning Electron Micro-scopes)、高分辨率透射电镜(High Resolution Transmission Electron Microscopes)、傅立叶变换红外光谱(Fourier Transform Infrared Ray)、纳米粒度及Zeta电位分析(Zetasizer)等分析方法,研究了包裹前后SiO2颗粒的表面形貌、颗粒尺寸及包裹层厚,包裹后颗粒的表面化学键合情况,颗粒在四氯乙烯中的表面Zeta电位以及在四氯乙烯中的分散性。结果表明:自制SiO2颗粒呈球形,粒径约300 nm,SiO2颗粒表面包裹了聚苯乙烯,包裹层较为均匀完整,层厚约为10~25 nm,并随包裹颗粒时所加苯乙烯单体量增大而变厚,颗粒在四氯乙烯中的表面Zeta电位由-4.26 mV提高到-49.47 mV,包裹后颗粒在电势为9 V的电场下,响应时间理论计算值到达40 ms,颗粒在四氯乙烯中的分散性良好,分散后静置48 h,分散率可达到87%。  相似文献   

2.
蓝色电子墨水微胶囊的制备及其电场响应行为   总被引:12,自引:6,他引:6  
利用脲甲醛树脂为壁材制备了以酞菁蓝BGS(β-CuPc)颗粒分散在四氯乙烯(TCE)中的悬浮液为核材料的蓝色电子墨水微胶囊。研究了不同改性剂与表面活性剂对β-CuPc颗粒的改性效果及在TCE中的分散性、TCE/水界面张力及囊内β-CuPc微颗粒在胶囊内表面的吸附的影响。结果表明,用十八胺(ODA)改性的β-CuPc颗粒在TCE中的分散性有很大程度提高,其电泳移动速度是未改性前的20倍;TCE/水间的界面张力越大越有利于微胶囊的形成;在TCE中的油溶性表面活性剂Span-80的浓度不低于0.062mmol/L时,β-CuPc颗粒在胶囊内表面吸附被阻止。在100V/mm的直流电场下.微胶囊囊内TCE中分散的β-CuPc颗粒表现出良好的可逆移动特征。  相似文献   

3.
利用十八胺改性的酞菁绿G作为绿色显示颗粒,span80为电荷控制剂,四氯乙烯为分散介质,油溶黄为背景色,制备稳定的电泳液,采用界面聚合法制备出电子墨水微胶囊。研究了改性后的酞菁绿G颗粒在电泳液中分散性和颗粒大小分布,通过SEM照片证明,当十八胺的质量分数为4%时,酞青绿G在四氯乙烯下分散效果最好。对电泳液进行微胶囊化处理后,在E=50V/mm电场下,微胶囊中的颗粒可以进行可逆运动。  相似文献   

4.
SiO_2包覆纳米TiO_2的初步探讨   总被引:19,自引:0,他引:19  
为了改善纳米TiO2的分散性,利用表面包覆技术,在TiO2的表面形成致密的SiO2膜,以达到改性的目的。讨论了SiO2包覆纳米TiO2的作用、机理和包覆工艺条件,并对包覆后的TiO2通过透射电子显微镜、Z-3000Zeta电位与粒度分布仪以及红外光谱分别进行分析。实验结果表明,包膜后的TiO2表面状态发生了变化,TiO2在水溶液中的分散性能得到明显改善。由红外光谱得知,这种包覆不仅是物理包覆,也是一种化学键合,在TiO2的表面形成Ti—O—Si键。  相似文献   

5.
明胶-阿拉伯树胶电子墨水微胶囊显示性能优化   总被引:1,自引:1,他引:0  
以明胶-阿拉伯树胶为壁材,四氯乙烯为分散介质,硬脂酸改性的TiO2为显示颗粒,采用复合凝聚法制备了红白显示的电子墨水微胶囊。详细讨论了TiO2用量对反射性能的影响,讨论了Span80用量对分散体系稳定性的影响。结果表明:随着电荷控制剂Span80用量的增加,颗粒的Zeta电势和电泳淌度随之增加,使得分散体系的稳定性增加。当Span80浓度为3.0%时,分散体系长时间放置,无沉降发生。制备的微胶囊涂膜后,器件的对比度及分辨率均得到了良好改善。同时,驱动电压可达2.5 V/μm,响应时间降低到150ms。  相似文献   

6.
采用浓硝酸(50%)与硅烷偶联剂(KH550)分别对炭黑进行了表面改性。采用SEM、EDS研究了改性炭黑的粒径、形貌及元素含量;采用金相显微镜和紫外-可见光分光光度计分析了改性炭黑在四氯乙烯中的分散性。利用自制电泳装置测试了氧化改性炭黑的电场响应特性。结果表明,表面改性后的炭黑电导率下降,具有更优良的分散性与电场响应特性。电荷控制剂span-80可以有效提高改性炭黑在TCE中的分散性。  相似文献   

7.
《电子质量》2009,(1):22-22
美国麦奇克有限公司开发出最新一代Zetatrae微电场分析技术,融纳米颗粒粒度分布与Zeta电位测量于一体,无需传统的比色皿,一次进样即可得到准确的粒度分布和Zeta电位分析数据。与传统的Zeta电位分析技术相比,Zetatrac采用先进的“Y型光纤探针光路设计,配置膜电极产生微电场,操作简单,测量迅速,无需精确定位由于电泳和电口等效应导致的静止层,无需外加大功率电场,  相似文献   

8.
介绍了CMP浆料SiO2水溶胶的Na+含量过高对集成电路可靠性的影响,讨论了硅溶胶纯化制备过程中容易凝胶的不稳定现象。中试实验中,采用阳离子交换的方法,去除Na+等金属离子。改变SiO2水溶胶pH值,测量其Zeta电位,得到最稳定SiO2水溶胶pH值在10左右。分析一次阳离子交换和两次阳离子交换过程,得到Na+浓度、pH值和Zeta电位变化规律。加入有机碱调节pH值,并起到螯合金属离子的作用。最后得到Na+浓度为1×10-6~2×10-6 mol/L、pH值在10~10.5、Zeta电位在-40~-45 mV的稳定碱性硅溶胶。为碱性CMP浆料SiO2水溶胶工业化纯化制备生产提供了理论依据。  相似文献   

9.
对陶瓷颗粒表面进行改性是提高陶瓷/聚合物复合材料介电性能的重要途径。该文先后使用H2O2和硅烷偶联剂KH550对BaTiO3(BT)陶瓷颗粒表面进行了两次处理,采用简单的溶液共混及流延工艺制备了改性钛酸钡/聚偏氟乙烯(M-BT/PVDF)薄膜。结果表明,用H2O2和硅烷偶联剂KH550对BT颗粒表面进行改性能有效地改善BT与PVDF基质的界面结合,从而提高体系的介电常数。当掺入60%(体积分数)的BT时,复合薄膜介电常数提高到36(为纯PVDF的6倍),介电损耗为5%。  相似文献   

10.
张亚倩  张荣实 《红外与激光工程》2018,47(11):1121004-1121004(7)
研究了在凝胶注模用超细镁铝尖晶石浆料的制备工艺中,粉体粒度、pH值、分散剂等对浆料流变性、Zeta电位、粘度和稳定性的影响及作用机理。实验结果表明:相同剪切速率下,随着粉体粒径的减小,浆料粘度变大,稳定性提高。当浆料中不添加分散剂时,超细镁铝尖晶石浆料在酸性条件中的Zeta电位绝对值比在碱性条件下高。添加分散剂后,等电位点对应pH值向酸性方向移动,且随固相含量的提高,制备低粘度浆料所需分散剂百分含量越低。pH值和分散剂含量均存在最佳范围,过高和过低,浆料的流变性和稳定性均会变差。Zeta电位绝对值的大小仅仅是影响浆料稳定性的一个方面,如果分散剂过量,即使浆料颗粒Zeta电位绝对值很大,浆料也会产生团聚和絮凝。  相似文献   

11.
This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.  相似文献   

12.
We have fabricated the white organic light-emitting devices (WOLEDs) based on 4,4' -bis(2,2 -diphenyl vinyl)-1,1' - biphenyl (DPVBi) and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene (rubrene). The device structure is ITO/2T-NATA (20 nm)/NPBX (20 nm)/CBP: x%Ir(ppy)3:0.5% rubrene (8 nm)/NPBX (5 nm)/DPVBi (30 nm)/Alq(30 nm)/LiF(0.5 nm)/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris (2-phenylpyridine) iridium [Ir(ppy)3], acts as a yellow light-emitting layer, and N,N' -bis- (1-naphthyl)- N,N' -diphenyl -1, 1' -biphenyl-4,4' -diamine (NPBX) acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir (PPY)3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.  相似文献   

13.
To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.  相似文献   

14.
本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。  相似文献   

15.
In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal (200) (2d = 0.4027 nm) is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line(w), the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line(x), the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines(y), the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line(z) in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line(q) in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution(λ/△ 2) is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.  相似文献   

16.
High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET > PDMAT > TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.  相似文献   

17.
This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.  相似文献   

18.
Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.  相似文献   

19.
An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.  相似文献   

20.
It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer (LDV).  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号